DMN3055LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) Max ID Max TA = +25C 40m @ VGS = 4.5V 5.0A 75m @ VGS = 2.5V 3.6A BVDSS 30V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Battery Charging Power Management Functions DC-DC Converters Portable Power Adaptors Case: U-DFN2020-6 (Type B) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) D2 D1 S2 G2 D2 D1 G2 G1 D1 D2 G1 S2 S1 S1 Pin1 Bottom View Internal Schematic Ordering Information (Note 4) Part Number DMN3055LFDB -7 DMN3055LFDB -13 Notes: Case U-DFN2020-6 (Type B) U-DFN2020-6 (Type B) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information M6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) M6 Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMN3055LFDB Document number: DS38172 Rev. 2- 2 Mar 3 2018 F Apr 4 2019 G May 5 Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 2021 I Aug 8 Sep 9 2022 J Oct O 2023 K Nov N Dec D August 2017 (c) Diodes Incorporated DMN3055LFDB Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Continuous Drain Current (Note 6) VGS = 4.5V TA = +25C TA = +70C Value 30 12 5.0 4.0 1.5 25 11 6 ID IS IDM IAS EAS Unit V V A A A A mJ Thermal Characteristics Characteristic Symbol TA = +25C Total Power Dissipation (Note 5) PD TA = +70C Steady State t<10s TA = +25C Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) PD RJC 0.87 83 60 10 TJ, TSTG -55 to +150 RJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Unit W 0.52 132 101 1.36 RJA TA = +70C Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) Value 0.81 C/W W C/W C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current, TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - - - - - 1.0 100 V A nA VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 12V, VDS = 0V VGS(TH) RDS(ON) - 32 52 0.8 1.5 40 75 1.2 V Static Drain-Source On-Resistance 0.5 - - - m VDS = VGS, ID = 250A VGS = 4.5V, ID = 3A VGS = 2.5V, ID = 2A VGS = 0V, IS = 2A - - - - - - - - - - - - - - 458 50 44 2.1 11.2 5.3 1.1 1.8 1.8 2.6 9.5 2.1 7.0 1.8 - - - - - - - - - - - - - - pF pF pF nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR V Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, ID = 4A VDS = 15V, VGS = 10V, Rg = 6, RL = 3.75, IF = 3A, di/dt = 100A/s 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN3055LFDB Document number: DS38172 Rev. 2- 2 2 of 7 www.diodes.com August 2017 (c) Diodes Incorporated DMN3055LFDB 10.0 20 VGS = 2.5V VGS = 3.0V 9.0 VGS=3.5V 7.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8.0 VGS = 4.0V 6.0 VGS = 4.5V 5.0 VGS = 10.0V 4.0 VGS = 2.0V 3.0 2.0 14 12 10 8 6 TJ = 125 TJ = 150 TJ = 85 TJ = 25 TJ = -55 2 VGS = 1.5V 0.0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 5 0.08 0.07 VGS = 2.5V 0.05 0.04 0.03 VGS = 4.5V 0.02 0.01 0 1 3 5 7 9 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V 0.06 150 0.055 0.05 0.045 125 0.04 85 0.035 0.03 25 0.025 0.02 -55 0.015 0.01 0.005 0 2 4 6 8 10 12 14 ID, DRAIN CURRENT (A) 16 18 20 Figure 5 . Typical On-Resistance vs. Drain Current and Temperature DMN3055LFDB Document number: DS38172 Rev. 2- 2 1 1.5 2 2.5 3 3.5 4 0.1 ID = 3A 0.08 0.06 0.04 0.02 ID = 2A 0 2 3 4 5 6 7 8 9 10 11 12 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 . Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.07 0.065 0.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.09 0.06 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 16 4 1.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) VDS = 5V 18 3 of 7 www.diodes.com 1.8 1.6 VGS = 4.5V, ID = 3.0A 1.4 1.2 1 VGS = 2.5V, ID = 2.0A 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Temperature August 2017 (c) Diodes Incorporated 0.08 1.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) DMN3055LFDB 0.07 VGS = 2.5V, ID = 2.0A 0.06 0.05 0.04 0.03 VGS = 4.5V, ID = 3.0A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 ID = 1mA 1.2 ID = 250A 1 0.8 0.6 150 -50 0 25 50 75 100 125 150 Figure 8. Gate Threshold Variation vs. Junction Temperature 20 1000 18 f=1MHz VGS = 0V 16 CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) -25 TJ, JUNCTION TEMPERATURE () TJ, JUNCTION TEMPERATURE () Figure 7 . On-Resistance Variation with Temperature 14 12 10 8 TJ = 85oC TJ = 125oC 6 4 TJ = 150oC 2 TJ = 25oC TJ = -55oC 0 Ciss 100 Coss Crss 10 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) 1.5 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 100 10 RDS(ON) Limited PW =100s ID, DRAIN CURRENT (A) VGS (V) 8 6 4 VDS = 15V, ID = 4A 10 1 PW =10ms 0.1 2 0.01 0 0 2 6 8 Qg (nC) Figure 11. Gate Charge DMN3055LFDB Document number: DS38172 Rev. 2- 2 4 10 12 4 of 7 www.diodes.com PW =1ms PW =100ms PW =1s TJ(Max) = 150 TA = 25 Single Pulse PW =10s DUT on 1*MRP Board DC VGS= 4.5V 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 August 2017 (c) Diodes Incorporated DMN3055LFDB 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 D=0.005 D=Single Pulse RJA(t) = r(t) * RJA RJA = 135/W Duty Cycle, D = t1 / t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, Pulse Duration Time (sec) 10 100 1000 Figure 13. Transient Thermal Resistance DMN3055LFDB Document number: DS38172 Rev. 2- 2 5 of 7 www.diodes.com August 2017 (c) Diodes Incorporated DMN3055LFDB Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type B) A A3 A1 Seating Plane D D2 D2 R0.1 (Pin E 50 #1 ID ) z1 E2 z1 k L z U-DFN2020-6 (Type B) Dim Min Max Typ A 0.545 0.605 0.575 A1 0.00 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 k 0.45 L 0.25 0.35 0.30 z 0.225 z1 0.175 All Dimensions in mm e b Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type B) X2 C Dimensions X1(2x) Y2 Y1(2x) G G1 Y C G G1 X X1 X2 Y Y1 Y2 Value (in mm) 0.650 0.150 0.450 0.350 0.600 1.650 0.500 1.000 2.300 X DMN3055LFDB Document number: DS38172 Rev. 2- 2 6 of 7 www.diodes.com August 2017 (c) Diodes Incorporated DMN3055LFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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