1SS133
High Speed
Switching Diode
Features
• Glass sealed envelope. (MSD)
• High speed. (trr=1.2ns Typ)
• High reliability.
• Silicon epitaxial planar
Absolute maximum Ratings
Symbol Rating Rating Unit
VRM Peak Reverse Voltage 90 V
VR DC Reverse Voltage 80 V
IFM Peak Forward Current 400 mA
IO Mean Rectifying Current 130 mA
Isurge Surge Current (1s) 600 mA
PD Power Dissipation 300 mW
TJ Operating Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VF Forward Voltage
(IF=100mAdc) --- 1.2 Vdc
IR Reverse Current
(VR=80Vdc) --- 0.5 uAdc
CT Capacitance Between Terminals
(VR=0.5Vdc, f=1.0MHz) --- 2.0 pF
trr Reverse Recovery Time
(VR=6.0Vdc, IF=10mAdc, RL=50OHM) --- 4.0 ns
omponents
20736 Marilla Street Chatsworth
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MCC
A
B
C
D
D
Cathode
Mark
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A--- .166 --- 4.2
B--- .079 --- 2.00
C--- .020 --- .52
D1.000 --- 25.40 ---
DO-35
www.mccsemi.com
Revision: 3 2002/12/31
0
Ta=125˚C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.2
0.5
1
2
5
10
20
50
100
Ta=75
˚C
Ta=25
˚C
Ta=−25
˚C
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig. 1 Forward characteristics
0
100˚C
70˚C
50˚C
Ta=25˚C
20 40 60 80 100 120
3
10
30
100
300
1000
3000
REVERSE VOLTAGE : V
R
(V)
REVERSE CURRENT : I
R
(nA)
Fig. 2 Reverse characteristics
0
010 20 30
0.5
1.0
1.5
2.0
2.5
3.0
51525
f=1MHz
REVERSE VOLTAGE : VR (V)
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
Fig. 3 Capacitance between
terminals characteristics
Fig. 4 Reverse recovery time
characteristics
0
010 20 30
1
2
3
V
R
=6V
I
rr
=1/10I
R
REVERSE RECOVERY TIME : trr (ns)
FORWARD CURRENT : I
F
(mA)
0.01 0.1 1 10 100 1000
0.1
0.2
0.5
1
2
5
10
PULSE
Single pulse
SURGE CURRENT : I
surge
(A)
PULSE WIDTH : Tw (ms)
Fig.5 Surge current characteristics
PULSE GENERATOR
OUTPUT 50ΩSAMPLING
OSCILLOSCOPE
50
Ω
0.01µFD.U.T.
5kΩ
Fig. 6 Reverse recovery time (trr) measurement circuit
MCC
1SS133
www.mccsemi.com
Revision: 3 2002/12/31
