Features
• High output power:
21.0 dBm typical P1 dB at 2.0 GHz
20.5 dBm typical P1 dB at 4.0 GHz
• High gain at 1 dB compression:
14.0 dB typical G1 dB at 2.0 GHz
9.5 dB typical G1 dB at 4.0 GHz
• Low noise gure:
1.9 dB typical NFO at 2.0 GHz
• High gain-bandwidth product: 8.0 GHz typical fT
• Cost eective ceramic microstrip package
36 micro-X Package
Description
Avago’s AT-42036 is a general purpose NPN bipolar tran-
sistor that oers excellent high frequency performance.
The AT-42036 is housed in a cost eective surface mount
100 mil micro-X package. The 4 micron emitter-to-emitter
pitch enables this transistor to be used in many dierent
functions. The 20 emitter nger interdigitated geometry
yields a medium sized transistor with impedances that
are easy to match for low noise and medium power ap-
plications. This device is designed for use in low noise,
wideband amplier, mixer and oscillator applications in
the VHF, UHF, and microwave frequencies. An optimum
noise match near 50 Ω up to 1 GHz, makes this device
easy to use as a low noise amplier.
The AT-42036 bipolar transistor is fabricated using
Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process.
The die is nitride passivated for surface protection.
Excellent device uniformity, performance and reliabil-
ity are produced by the use of ion-implantation, self-
alignment techniques, and gold metalization in the fabri-
cation of this device.
AT-42036
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
2
AT-42036 Absolute Maximum Ratings[1]
Symbol Parameter Units Absolute Maximum
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 20
VCEO Collector-Emitter Voltage V 12
IC Collector Current mA 80
PT Power Dissipation[2,3] mW 600
Tj Junction Temperature °C 150
TSTG Storage Temperature[4] °C -65 to 150
Thermal Resistance[2,5]:
θjc = 175°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. Tcase = 25°C.
3. Derate at 5.7 mW/°C for Tc > 95°C.
4. Storage above +150°C may tarnish the leads of this package making it dicult to solder into
a circuit.
5. The small spot size of this technique results in a higher, though more accurate determination
of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more
information.
Electrical Specications
TA = 25°C
Symbol Parameters and Test Conditions[1] Frequency Units Min. Typ. Max.
|S21E|2 Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 10.0 11.0
f = 4.0 GHz 5.0
P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 21.0
VCE = 8 V, IC = 35 mA f = 4.0 GHz 20.5
G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 14.0
f = 4.0 GHz 9.5
NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 2.0
f = 4.0 GHz 3.0
GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 13.5
f = 4.0 GHz 10.0
fT Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0
hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA — 30 150 270
ICBO Collector Cuto Current; VCB = 8 V µA 0.2
IEBO Emitter Cuto Current; VEB = 1 V µA 2.0
CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF 0.28
Note:
1. For this test, the emitter is grounded.
3
AT-42036 Typical Performance, TA = 25°C
FREQUENCY (GHz)
Figure 4. Insertion Power Gain, Maximum
Available Gain and Maximum Stable Gain vs.
Frequency.
VCE = 8 V, IC = 35 mA.
GAIN (dB)
0.1 0.50.3 1.0 3.0 6.0
IC (mA)
Figure 2. Output Power and 1 dB Compressed
Gain vs. Collector Current and Frequency. VCE
= 8 V.
24
20
16
12
8
4
G1 dB (dB) P1 dB (dBm)
0 10 20 30 40 50
P1dB
G1dB
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S21E|2
IC (mA)
Figure 1. Insertion Power Gain vs. Collector
Current and Frequency. VCE = 8 V.
20
16
12
8
4
0
|S21E|2 GAIN (dB)
0 10 20 30 40 50
1.0 GHz
2.0 GHz
4.0 GHz
IC (mA)
Figure 3. Output Power and 1 dB Compressed
Gain vs. Collector Current and Voltage. f = 2.0
GHz.
10 V
4 V
6 V
4 V
10 V
6 V
24
20
16
12
16
14
12
10
G1 dB (dB) P1 dB (dBm)
0 10 20 30 40 50
P1dB
G1dB
FREQUENCY (GHz)
Figure 5. Noise Figure and Associated Gain vs.
Frequency. VCE = 8 V, IC = 10 mA.
GAIN (dB)
24
21
18
15
12
9
6
3
0
4
3
2
1
0
NFO (dB)
0.5 2.01.0 3.0 4.0 5.0
GA
NFO
4
AT-42036 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA
Freq. S11 S11 S21 S21 S21 S12 S12 S12 S22 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .72 -46 28.3 26.09 152 -37.0 .014 73 .92 -14
0.5 .59 -137 20.9 11.13 102 -31.0 .028 44 .58 -27
1.0 .56 -171 15.4 5.91 80 -28.2 .039 47 .51 -29
1.5 .56 169 12.1 4.03 67 -26.6 .047 52 .50 -33
2.0 .58 155 9.7 3.06 55 -24.2 .062 55 .48 -38
2.5 .59 147 8.0 2.50 48 -22.6 .074 61 .47 -42
3.0 .61 137 6.5 2.10 38 -20.8 .092 65 .46 -51
3.5 .63 128 5.2 1.82 27 -19.6 .105 62 .47 -63
4.0 .63 117 4.0 1.60 17 -18.0 .126 57 .49 -72
4.5 .63 106 3.1 1.43 7 -16.5 .149 53 .51 -80
5.0 .64 93 2.3 1.30 -3 -15.4 .169 48 .52 -87
5.5 .67 79 1.5 1.19 -13 -14.3 .193 41 .51 -94
6.0 .72 70 0.6 1.07 -23 -13.4 .215 35 .46 -105
AT-42036 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA
Freq. S11 S11 S21 S21 S21 S12 S12 S12 S22 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .50 -88 33.2 45.64 135 -42.0 .008 68 .77 -22
0.5 .52 -164 22.4 13.24 92 -32.8 .023 57 .45 -25
1.0 .53 174 16.6 6.75 76 -28.2 .039 63 .42 -26
1.5 .53 160 13.1 4.55 64 -25.6 .053 66 .41 -30
2.0 .55 148 10.8 3.45 53 -23.2 .069 65 .41 -36
2.5 .57 142 9.0 2.81 47 -21.6 .084 67 .39 -40
3.0 .59 134 7.5 2.37 37 -20.0 .101 64 .38 -49
3.5 .60 125 6.3 2.06 27 -18.4 .120 61 .39 -61
4.0 .60 116 5.2 1.81 17 -17.0 .141 57 .41 -71
4.5 .60 104 4.2 1.62 7 -16.0 .158 50 .43 -78
5.0 .61 92 3.4 1.47 -2 -14.9 .179 45 .44 -84
5.5 .64 79 2.6 1.35 -13 -14.1 .198 37 .43 -91
6.0 .69 70 1.7 1.21 -23 -13.2 .219 30 .38 -102
A model for this device is available in the DEVICE MODELS section.
AT-42036 Noise Parameters, VCE = 8 V, IC = 10 mA
Freq. NFO Γopt Γopt
GHz dB Mag Ang RN/50
0.1 1.0 .04 10 0.13
0.5 1.1 .04 66 0.12
1.0 1.3 .07 150 0.12
2.0 2.0 .20 -178 0.12
4.0 3.0 .51 -110 0.36
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2653EN
AV02-0300EN - May 29, 2007
36 micro-X Package Dimensions
Tape Dimensions
Device Orientation
Ordering Information
Part Numbers No. of Devices Comments
AT-42036-BLKG 100 Bulk
AT-42036-TR1G 1000 7" Reel
420
13
4
2
EMITTER
EMITTER
COLLECTOR
BASE
2.15
(0.085)
2.11 (0.083) DIA.
0.508
(0.020)
2.54
(0.100)
4.57 � 0.25
0.180 � 0.010
0.15 � 0.05
(0.006 � 0.002)
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = � 0.005
mm .xx = � 0.13
0.56
(0.022)
1.45 � 0.25
(0.057 � 0.010)
12 mm
1
TOP VIEW
1 INDICATES PIN 1 ORIENTATION.
420 420 420
A
B
t
C
W
F
E
P
2
10 PITCHES CUMULATIVE
TOLERANCE ON TAPE �0.2 MM
USER FEED
DIRECTION
P
0
D
0
COVER
TAPE
T P
1
D
1
K
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
B
K
P1
D1
5.77 � 0.10
6.10 � 0.10
1.70 � 0.10
8.00 � 0.10
1.50 min.
0.227 � 0.004
0.240 � 0.004
0.067 � 0.004
0.314 � 0.004
0.059 min.
CAVITY
DIAMETER
PITCH
POSITION
D0
P0
E
1.50 + 0.10/-0.05
4.00 � 0.10
1.75 � 0.10
0.059 + 0.004/-0.002
0.157 � 0.004
0.069 � 0.004
PERFORATION
WIDTH
THICKNESS
W
t
12.00 � 0.20
0.30 � 0.05
0.472 � 0.008
0.012 � 0.002
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P2
5.50 � 0.05
2.00 � 0.05
0.217 � 0.002
0.079 � 0.002
DISTANCE
BETWEEN
CENTERLINE
WIDTH
TAPE THICKNESS
C
T
9.30 � 0.10
0.065 � 0.010
0.366 � 0.004
0.0026 � 0.0004
COVER TAPE