Features * Supply Voltage 5V (Typically) * Very Low Power Consumption: 150 mW (Typically) for -1 dBm Output Level * Very Good Sideband Suppression by Means of Duty Cycle Regeneration of the LO * * * * * * Input Signal Phase Control Loop for Precise 90 Phase Shifting Power-down Mode Low LO Input Level: -10 dBm (Typically) 50- Single-ended LO and RF Port LO Frequency from 100 MHz to 1 GHz SO16 Package 1000-MHz Quadrature Modulator Benefits * No External Components Required for Phase Shifting * Adjustment Free, Hence Saves Manufacturing Time * Only Three External Components Necessary, this Results in Cost and Board Space Saving U2790B Electrostatic sensitive device. Observe precautions for handling. 1. Description The U2790B is a 1000-MHz quadrature modulator using Atmel(R)'s advanced UHF process. It features a frequency range from 100 MHz up to 1000 MHz, low current consumption, and single-ended RF and LO ports. Adjustment-free application makes the direct converter suitable for all digital radio systems up to 1000 MHz, e.g., GSM, ADC, JDC. Figure 1-1. Block Diagram SPU BBAI 8 BBAI 12 15 Phadj 1 Power up 7 LO i PU 6 Duty cycle regenerator Frequency doubler 0 90 90/control loop VS 5,4 RFO 3 16 BBBi 9 BBBI 10 2,11,13,14 GND 4583D-CELL-07/06 2. Pin Configuration Figure 2-1. Table 2-1. 2 Pinning SO16 PU 1 16 Phadj GND 2 15 Phadj RFO 3 14 GND VS 4 13 GND VS 5 12 LOi SPD 6 11 GND BBAi 7 10 BBBi BBAi 8 9 BBBi Pin Description Pin Symbol Function 1 PU 2, 11, 13, 14 GND Ground 3 RFo RF output 4, 5 VS Supply voltage 6 SPU Settling time power-up 7 BBAi Baseband input A 8 BBAi Baseband input A inverse 9 BBBi Baseband input B 10 BBBi Baseband input B inverse 12 LOi LO input 15, 16 Phadj Power-up input Phase adjustment (not necessary for regular applications) U2790B 4583D-CELL-07/06 U2790B 3. Absolute Maximum Ratings Parameters Symbol Value Unit Supply voltage VS 6 V Input voltage Vi 0 to VS V Junction temperature Tj 125 C TStg -55 to +125 C Symbol Value Unit Storage temperature range 4. Operating Range Parameters Supply voltage range Ambient temperature range VS 4.5 to 5.5 V Tamb -40 to +85 C Symbol Value Unit RthJA 110 K/W 5. Thermal Resistance Parameters Junction ambient SO16 6. Electrical Characteristics Test conditions (unless otherwise specified): VS = 5V, Tamb = 25C, referred to test circuit, system impedance ZO = 50, fLO = 900 MHz, PLO = -10 dBm, VBBi = 1 Vpp differential. No. Parameters 1.1 1.2 Test Conditions Pin Symbol Min. Supply voltage range 4, 5 VS 4.5 Supply current 4, 5 IS 24 7-8, 9-10 Typ. Max. Unit Type* 5.5 V A 30 37 mA A VBBi 1000 1500 mVpp D 3.2 k D 250 MHz D 2.5 2.65 V A 0.1 <1 mV/C D 2 Baseband Inputs 2.1 Input-voltage range (differential) 2.2 Input impedance (single ended) ZBBi 2.3 Input-frequency range(5) fBBi 0 2.4 Internal bias voltage VBBb 2.35 2.5 Temperature coefficient TCBB *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. The required LO level is a function of the LO frequency. 2. In reference to an RF output level -1 dBm and I/Q input level of 400 mVpp differential. 3. Sideband suppression is tested without connection at pins 15 and 16. For higher requirements a potentiometer can be connected at these pins. 4. For Tamb = -30C to +85C and VS = 4.5V to 5.5V. 5. By low impedance signal source. 3 4583D-CELL-07/06 6. Electrical Characteristics (Continued) Test conditions (unless otherwise specified): VS = 5V, Tamb = 25C, referred to test circuit, system impedance ZO = 50, fLO = 900 MHz, PLO = -10 dBm, VBBi = 1 Vpp differential. No. 3 3.1 Parameters Test Conditions Pin Symbol Min. 12 fLOi 50 PLOi -12 Typ. Frequency range (1) -10 3.2 Input level Input impedance ZiLO 50 3.4 Voltage standing wave ratio VSWRLO 1.4 Duty cycle range DCRLO 0.4 PRFo -5 -1 4 RF Output 4.1 Output level 4.2 LO suppression(2) fLO = 900 MHz fLO = 150 MHz LORFo 30 32 4.3 Sideband suppression(2, 3) fLO = 900 MHz fLO = 150 MHz SBSRFo 35 30 4.4 Phase error(4) 4.5 Amplitude error 3 1000 MHz D -5 dBm D D VBBi = 2V, VBBi = 3V VBBi = VBBi = 2.5V 2 D 0.6 D B 35 35 dB B 40 35 dB B Pe <1 deg. D Ae < 0.25 dB D NFL -132 -144 dBm/Hz D VSWRRF 1.6 Noise floor 4.7 VSWR 4.8 3rd-order baseband harmonic suppression SBBH 4.9 RF harmonic suppression 35 +2 2 D 45 dB D SRFH 35 dB D 4, 5 IPU 10 A D 6 to 3 tsPU 10 s D Power-up Mode 5.1 Supply current VPU 0.5V VPU = 1V 5.2 Settling time CSPU = 100 pF CLO = 100 pF CRFo = 1 nF 6 Type* dBm 4.6 5 Unit LO Input 3.3 3.5 Max. 1 Switching Voltage 6.1 Power-on 1 VPUon 6.2 Power-up 1 VPUdown 4 1 V D V D *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. The required LO level is a function of the LO frequency. 2. In reference to an RF output level -1 dBm and I/Q input level of 400 mVpp differential. 3. Sideband suppression is tested without connection at pins 15 and 16. For higher requirements a potentiometer can be connected at these pins. 4. For Tamb = -30C to +85C and VS = 4.5V to 5.5V. 5. By low impedance signal source. 4 U2790B 4583D-CELL-07/06 U2790B 7. Diagrams Figure 7-1. Typical Single Sideband Output Spectrum at VS = 4.5V and VS = 5.5V, fLO = 900 MHz, PLO = -10 dBm, VBBI = 1 VPP (differential) Tamb = 25C Figure 7-2. Typical GMSK Output Spectrum 5 4583D-CELL-07/06 Figure 7-3. Demo Board Layout Figure 7-4. OIP3 versus Tamb, LO = 150 MHz, Level -20 dBm 16 VBBI = 0.2 VPP IP3 (dBm) 12 VBBi= 0.4 VPP 8 4 0 -40 -20 0 20 40 60 80 100 Temperature (C) 6 U2790B 4583D-CELL-07/06 U2790B Figure 7-5. OIP3 versus Tamb, LO = 900 MHz, Level -10 dBm 12 10 IP3 (dBm) VBBi = 0.4 VPP 8 6 VBBi = 1.0 VPP 4 2 0 -40 -20 0 20 40 60 80 100 Temperature (C) Figure 7-6. Output Power versus Tamb 0.5 Output Power (dBm) 0 FLO = 150 MHz -0,5 -1 -1.5 FLO = 900 MHz -2 -2.5 -40 -20 0 20 40 60 80 100 Temperature (C) Figure 7-7. Supply Current versus Tamb Supply Current (mA) 40 30 20 10 0 -40 -20 0 20 40 60 80 100 Temperature (C) 7 4583D-CELL-07/06 8 Figure 7-8. Typical S11 Frequency Response of the RF Output Figure 7-9. Typical VSWR Frequency Response of the RF Output U2790B 4583D-CELL-07/06 U2790B Figure 7-10. Typical S11 Frequency Response of the LO Input Figure 7-11. Typical VSWR Frequency Response of the LO input 10 VSWR 8 6 4 2 0 1000 100 LO Frequency (MHz) 9 4583D-CELL-07/06 Figure 7-12. Typical Supply Current versus Temperature at VS = 5V Supply Current ( mA ) 60 50 40 30 20 10 -40 -20 0 20 40 60 80 100 Temperature (C) Figure 7-13. Typical Output Power versus LO-Frequency at Tamb = 25C, VBBI = 230 mVPP (differential) Output Power ( dBm ) 0 -5 0 200 400 600 800 1000 1200 1400 LO Frequency ( MHz ) Figure 7-14. Typical required VBBi Input Signal (differential) versus LO Frequency for PO = 0 dBm and PO = -2 dBm VBBi (differential) (VPP) 2 1 0 0 200 400 600 800 1000 1200 1400 LO Frequency (MHz) 10 U2790B 4583D-CELL-07/06 U2790B Figure 7-15. Typical useful LO Power Range versus LO Frequency at Tamb = 25 C 0 LO Power (dBm) -10 -20 -30 -40 -50 0 200 400 600 800 1000 1200 1400 LO Frequency (MHz) Figure 7-16. Application Circuit PU 1n CPU A inv SPU Power down 220n A 220n BBAi 1 6 8 Power down 5,4 7 BBAi Baseband 100p LO processing 12 10k VS LOi Phadj B 220n BBBi Duty cycle regenerator Frequency doubler 0 90 90/ control loop VS VS 100n 1n 3 15 OUT RFO 16 9 10 BBBi 2,11,13,14 220n Binv GND 11 4583D-CELL-07/06 Figure 7-17. Demo Board Layout 12 U2790B 4583D-CELL-07/06 U2790B 8. Application Notes 8.1 Noise Floor and Settling Time In order to reduce noise on the power-up control input and improve the wide-off noise floor of the 900-MHz RF output signal, capacitor CPU should be connected from pin 6 to ground in the shortest possible way. The settling time has to be considered for the system under design. For GSM applications, a value of CPU = 1 nF defines a settling time, tsPU, equal or less than 3 ms. This capacitance does not have any influence on the noise floor within the relevant GSM mask. For mobile applications the mask requirements can be achieved very easily without CPU. A significant improvement of the wide-off noise floor is obtainable with CPU greater than 100 nF. Such values are recommended for applications where the settling time is not critical such as in base stations. Coupling capacitors for LOi and RFO also have a certain impact on the settling time. The values used for the measurements are CLOi = 100 pF and CRFo = 1 nF. 8.2 Baseband Coupling The U2790B-FP (SO16) has an integrated biasing network which allows AC coupling of the baseband signal at a low count of external components. The bias voltage is 2.5V 0.15V. Figure 7-17 shows the baseband input circuitry with a resistance of 3.2 k for each asymmetric input. The internal DC offset between A and A, and B and B is typically < 1 mV with a maximum of 3 mV. DC coupling is also possible with an external DC voltage of 2.5 0.15V. Figure 8-1. Baseband Input Circuitry Mixer input stage 3.2 k A A , B , B 13 4583D-CELL-07/06 RF Output Circuitry LO Input Circuitry VS RFO 20 Figure 8-2. 3 LO Input Circuitry LO 12 50 20 pF 14 U2790B 4583D-CELL-07/06 U2790B 9. Ordering Information Extended Type Number Package Remarks U2790B-NFPH SO16 Tube, Pb-free U2790B-NFPG3H SO16 Taped and reeled, Pb-free 10. Package Information Package SO16 Dimensions in mm 5.2 4.8 10.0 9.85 3.7 1.4 0.25 0.10 0.4 1.27 0.2 3.8 6.15 5.85 8.89 16 9 technical drawings according to DIN specifications 1 8 11. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 4583D-CELL-07/06 * Page 3, Abs. Max.Ratings table: Storage temperature values changed * Page 2, Pin Description table: symbol of Pins 8 and 10 changed * Put datasheet in a new template 15 4583D-CELL-07/06 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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