NEC XXXXXXXXXX 2012 RF & Wireless Semiconductors 2 P R O D U C T S b y A P P L I C AT I O N Front End Components for 450 MHz to 2.5 GHz Applications 4 External LNAs for GPS 5 802.15.4/ZigBee Range Extension Devices 6 LNAs for L to C-Band Applications 7 Business Division (CSDBD) of Renesas Electronics Corpora- 2.4 & 5.8 GHz WLAN / Wi-Fi Devices 8 tion, formerly NEC Electronics Corporation. These products WiMAX Devices 9 include RF components and RFICs, optocouplers, solid state P R O D U C T S P E C I F I C AT I O N S relays, and lasers and detectors for fiber optics. GaAs RFIC Switches California Eastern Laboratories (CEL) is the exclusive sales and marketing partner in North America and Latin America for products made by the Compound Semiconductor Devices CEL serves designers, OEMs and contract manufacturers SPDT Dual Control Switches 10 SPDT Single Control Switches 10 Single & Multi-Throw Switches 10 in the RF & Wireless, Mobilecomm, Multimedia, Broadband Broadband Switches to 6 GHz 11 Communications, Industrial Control, and Automated Test MobileComm Antenna Switches 11 Equipment (ATE) markets. With over 50 years experience in high frequency design, customer support and fulfillment, CEL is ideally positioned to provide its customers with solutions tailored to meet their specific needs. CEL also maintains extensive inventories and provides engineering and applications assistance at its technical centers in Santa Clara, CA. and Wauconda, IL. The company supports customers through sales offices, sales representatives and distributors in numerous locations. GaAs FETs and RFIC Amplifiers Low Noise GaAs FETs, 100 MHz to 20GHz 12 GaAs RFIC Power Amplifiers 12 GaAs Integrated Front End ICs 13 GaAs CATV Hybrid Amplifiers 13 Silicon LD-MOSFET Power Devices 14 Silicon Bipolar Transistors Small Signal Silicon Devices 14 Small Signal SiGe Devices 15 Medium Power Transistors 15 Transistors for Cordless Phones 15 Twin Transistors, Mixed & Matched Die 16 Silicon Transistor Chips 16 Oscillator and Switching Transistors 16 Silicon RFICs Low Power and Wideband Amplifiers 17 Low Noise Amplifiers 18 BiCMOS Wideband LNAs with Tx/Rx Bypass 18 AGC Amplifiers with Video Output 18 Variable Gain Amplifiers 18 Frequency Up and Down Converters 19 Out-of-Band Tuners 19 Prescalers (Frequency Dividers) 19 Package Dimensions 20 S-Parameters, SPICE Models, App Notes, Data Sheets, and more are available at cel.com/RF 3 UPG2253T6S Front End IC Power Front End Components for 450 MHz to 2.5 GHz Applications Amplifiers Wi-Fi * Bluetooth * ZigBee * Automated Meter Reading * Mesh & Home Area Networks * ISM Band applications LNAs IN High Power RFIC Switches UPG225x Front End ICs CEL ZIC24xx System-on-Chip 802.15.4 Transceiver OUT UPGxxxx SP3T Switches Power Amplifiers Low Power RFIC Switches Front End 450 MHz UPG2253T6S +19 to +21dBm GaAs RFIC: PA, 2 SPDTs, filter, Tx/Rx bypass path UPG2118K + 31.5 dBm Three Stage GaAs MMIC UPG2250T5N UPG2301T5L MMIC & Transistor Power Amplifiers LNAs + 25 dBm GaAs MMIC, operates at 1.8 or 3.0 V 2.4 GHz 4 4 + 23 dBm Two stage GaAs HBT 4 4 4 4 UPG2251T6M + 25 dBm GaAs MMIC, fully matched NE5500234 Silicon LD-MOSFET: 32.5 dBm POUT typ NE5511279A Silicon LD-MOSFET: 40 dBm POUT typ NESG260234 4 4 + 20 dBm Low current GaAs MMIC NESG250134 2.4 GHz 4 UPG2314T5N NE5531079A 915 MHz Silicon LD-MOSFET: 40 dBm POUT typ Choose 0.8 Watt SiGe HBT Single or Multi Throw RFIC1Switches Watt SiGe HBT 4 5 - 6 GHz Chipset Transceiver 2.4 GHz 5 - 6 GHz 4 4 4 4 4 4 4 4 4 4 4 NESG270034 2 Watt SiGe HBT 4 4 NE5520379A 3 watt LDMOS FET: 35.5 dBm POUT typ 4 4 NE664M04 0.4 Watt Silicon Bipolar Transistor Driver 4 4 4 NE5520279A LDMOS FET: 32 dBm POUT typ 4 4 4 NESG2101M05 120 mW SiGe Bipolar Transistor Driver 4 4 4 UPG2155TB SPDT, low harmonics, ideal for high power applications 4 4 UPG2156TB SPDT, low harmonics, single control 4 4 4 UPG2409TB/T6X SPDT, high power, high isolation 4 4 4 UPG2415TK/T6X SPDT, high power, high isolation 4 4 4 UPG2009TB SPDT, high power, high linearity, no compromise performance 4 4 4 UPG2015TB SPDT, medium power, single control 4 4 4 UPG2422TK SPDT, great all-around med power device, in mini flat-lead pkg 4 4 4 UPG2179TB SPDT, industry's best low cost, med power switch, industry standard pkg 4 4 4 UPG2406TK /T6R SPDT, medium power, choice of packages 4 4 4 UPG2404T6Q SP3T, high power, ideal for triple mode cellular phone, NFC 4 4 UPG2405T6Q SP3T, miniature package for Bluetooth, WLAN, NFC 4 4 4 UPG2413T6M / T6Z SP3T, medium power, low insertion loss, low profile package 4 4 UPG2150T5L SP3T, 35 dB isolation between WLAN & B'tooth ports 4 4 UPD5713TK Low cost CMOS SPDT, single control, low profile package UPG2159T6R SPDT, low insertion loss, high isolation, 1.8 or 3 V 4 4 UPG2012TB /TK Single control GaAs SPDT, TB or mini flat-lead TK package 4 4 4 Low cost GaAs SPDT, performance guaranteed at 1.8 & 3.0 Volts 4 4 4 Medium & High Power GaAs RFIC Switches 4 Low Power CMOS & GaAs RFIC Switches UPG2214TB /TK 4 4 4 Front End Components for 450 MHz to 2.5 GHz continued MMIC & Transistor LNAs (Performance @ 1 GHz) 450 MHz 915 MHz UPD5740T6N Wideband CMOS LNA IC with bypass for mobile DTV 4 4 UPC3237TK SiGe:C RFIC: 1.4 dB NF, 15.3 dB Gain, for DTV 4 4 NE662M04 Silicon Bipolar Transistor: 1.0 dB NF, 21 dB Gain 4 4 4 4 2.4 GHz NESG3031M05/M14 SiGe Bipolar Transistor: 0.6 dB NF, 16 dB Gain 4 UPC8233TK SiGe:C RFIC: 0.95 dB NF, 20 dB Gain, 1.8V VCC 4 4 4 4 4 4 NESG3032M14 SiGe Bipolar Transistor: 0.6 dB NF, 17.5 dB Gain RFIC & Transistor LNAs Transistor: 0.6 dB NF, 17.5 dB Gain, ESD protection SiGe Bipolar NESG3033M14 NE3508M04 GaAs FET: 0.4 dB NF, 14 dB Gain, high linearity 4 NE3509M04 GaAs FET: 0.4 dB NF, 18dB Gain, high gain 4 WiMAX Transceiver WiMAX Transceiver RFIC Switches RFIC LNAs for Improved GPS Signal Performance Multi-Throw Switches External LNAs reduce front-end noise and improve receiver sensitivity. Combined with tuning and distributed filtering they can improve noise performance by more than 1.5dB over on-chip LNAs. GPS Receiver IC Low Loss Pre-Filter RFIC LNA High Rejection Post-Filter SiGe & SiGe:C RFIC LNAs Part Number Description UPC8211TK Low current Filter THIRD SECOND UPC8230TU FIRST Low noise & distortion, highly integrated UPC8231TK STAGE STAGE STAGE Supply Voltage (V) ICC (mA) 3.0 3.5 3.0 6.0 Noise Figure (dB) Tuner/ Receiver Gain (dB) IIP3 (dBm) Total External Components Req'd 1.30 18.5 -12 9 TK 0.85 18.5 -5 5 TU Package Low noise & current, high gain 3.0 3.8 0.80 20 -10 9 TK UPC8233TK Low voltage, current & noise, high gain 2.7 3.5 0.90 20 -8.5 8 TK UPC8236T6N Low voltage, noise & distortion, highly integrated 2.7 6.5 0.80 19.5 -3 5 T6N low profile UPC8240T6N Low voltage & noise, high gain, highly integrated 2.7 6.5 1.0 28 -21.5 5 T6N low profile Low voltage, noise & distortion, adjustable current, gain, high IIP3 2.7 3 - 10 0.80 14.5 -18.5 0 - +5 7 T6N low profile UPC8244T6N 1 Notes: 1. Under development, please inquire 5 Range Extension Components for 802.15.4/ZigBee Applications Our Power Amplifiers, LNAs and RFIC Switches are designed to integrate easily with a wide variety of 802.15.4, ZigBee and Bluetooth transceivers ICs -- including CEL's ZIC24xx MeshConnect transceiver and complete SoC solutions. LNAs RFIC Switches CEL ZIC24xx System-on-Chip 802.15.4 Transceiver Transceiver UPG2253T6S Front End IC Power Amplifiers Front End ICs LNAs UPG2253T6S +19 to +21dBm GaAs RFIC: PA, 2 SPDTs, filter, Tx/Rx bypass path GaAs MMIC Power Amplifiers IN UPG2118K +31.5 dBm POUT, 50% PAE UPG2250T5N +20 dBm POUT @ 1.8 VDD, 50% PAE UPG2251T6M UPG225x Front End ICs UPG2314T5N UPG2301T5L High Power RFIC Switches +25 dBm POUT @ 3.0 V, 47% PAE, with matching circuit CEL ZIC24xx System-on-Chip 802.15.4 Transceiver OUT +20 dBm POUT, 65 mA operating current, 50% PAE, 20 dB variable gain control +23 dBm POUT, 50% PAE, 20dB variable gain control GaAs RFIC SPDT SwitchesUPGxxxx SP3T Switches Power Low Power RFIC Switches UPG2012TK/TB Low power, single control voltage Amplifiers UPG2015TB Medium power, single control voltage, industry-standard package UPG2422TK Low insertion loss, high isolation, 1.8-5.3V operation UPG2179TB Industry's best medium power SPDT, and most cost-effective UPG2214TB/TK 1.8 / 3.0 V control voltage, low insertion loss, high isolation UPG2406T6R Medium power, 1.8 -3.3V control voltage, 0.45 dB Insertion Loss, +22.0 dBm PIN ( 0.1dB ) UPG2406TK 5 - 6 GHz Medium power, 1.8 -5.3V control voltage, 0.45 dB Insertion Loss UPG2408TK Medium power, 0.48 dB Insertion Loss, 29dBm PIN ( 0.1dB ) LNAs 2.4 GHz Transistor & MMIC LNAs NE662M04 Chipset Transceiver Silicon NPN transistor, 1.3 dB noise figure, 152.4 dB gain GHz NE3508M04 GaAs HJ FET, super low 0.45 dB noise figure, 14 dB gain, high linearity Choose 5 - 6 GHz Single or Multi Throw GaAs HJ FET, super low 0.45 dB noise figure, 18dB gain, high gain RFIC Switches NE3509M04 UPC8233TK SiGe:C MMIC, 1.8 to 3.3 V control voltage, 1.1 dB noise figure, 16.5 dB gain NESG3031M05/M14 SiGe HBT, 0.6 dB noise figure, 16 dB gain NESG7030M04 SiGe:C HBT, 0.75dB Noise Figure, 14 dB Gain@ 5.8GHz, built-in ESD protection 1 CEL System-on-Chip Transceiver IC ZIC2410 RF Transceiver with 8051 MCU: +8 dBm output power, 106 dB link budget, scalable data rates to 1 Mbps, voice CODEC, 48 pin QFN or 72 pin VFBGA package Notes: 1. Under development, please inquire 6 IC RFIC LNA Low Loss Pre-Filter High Rejection Post-Filter Low Noise Amplifiers for L to C-Band Applications First, second and third stage devices for applications from 1 to 8GHz Tuner/ Receiver FIRST STAGE Filter SECOND STAGE THIRD STAGE LNAs by Application Application Frequency GPS 1.575 GHz FIRST STAGE SECOND STAGE THIRD STAGE UPC8231TK UPC8233TK UPC8236T6N * UPC8211TK UPC8230TU UPC8240T6N UPC8244T6N 1 NESG3032M14 NE3509M04 /M14 NESG2031M05 NE662M04 NESG2031M05 NE3508M04 NE3509M04 NE3509M14 NE3510M04 NE3508M04 NESG2101M05 NESG2031M05 NESG3031M05 NESG7030M043 NESG3032M14 NE662M04 DAB and Satellite Radio 1.4 - 2.35 GHz WLAN, Wi-Fi, Cordless Phone 2.4 GHz NESG2031M05 NESG3031M05 NESG3032M14 NESG3033M14 NESG2031M05 NESG3031M05 NESG7030M043 NESG3032M14 NESG3033M14 WLAN, Wi-Fi, Cordless Phone 5 - 6 GHz NESG2031M05 NESG2101M05 NESG3031M05 NESG4030M14 NESG7030M043 NESG2031M05 NESG2101M05 NESG3031M05 NESG4030M14 NESG7030M043 NE3508M04 NESG2101M05 LNA Performance (see Data Tables for additional specifications) Part Number NF (dB) Description * Gain (dB) P1dB (dBm) Package Low Noise, High Gain Silicon RFIC LNAs (specified @ 1.575 GHz) UPC8211TK SiGe RFIC 1.3 18.5 -24 TK UPC8230TU SiGe:C RFIC 0.85 18.5 -17 TK UPC8231TK SiGe:C RFIC 0.8 20.0 -22 TK UPC8233TK SiGe:C RFIC 0.95 20.0 -23 TK UPC8236T6N SiGe:C RFIC 0.8 19.5 -18 T6N SiGe:C RFIC 1.0 28.0 -22.5 T6N SiGe:C RFIC 1.0 19.0 GaAs HJ-FET 0.40 @ 2.0 GHz 14.0 @ 2.0 GHz +18.0 M04 UPC8240T6N UPC8244T6N 1 NE3508M04 NE3509M04 / M14 2 NE3510M04 T6N GaAs HJ-FET 0.40 @ 2.0 GHz 17.5 @ 2.0 GHz +14.0 M04 or M14 GaAs HJ-FET 0.35 @ 2.0 GHz 19.0 @ 2.0 GHz +12.0 M04 or M14 NE662M04 Silicon Transistor 1.1 @ 2.0 GHz 16.0 @ 2.0 GHz NESG2021M05 /M16 SiGe Transistor 0.9 @ 2.0 GHz 18 @ 2.0 GHz +9 M05 or M16 NESG2031M05 SiGe Transistor 0.8 @ 2.0 GHz 17 @ 2.0 GHz +13 M05 M04 NESG2101M05 SiGe Transistor 0.9 @ 2.0 GHz 13 @ 2.0 GHz +21 M05 NESG3031M05 / M14 SiGe Transistor 0.6 @ 2.4 GHz 16 @ 2.4 GHz +13 M05 or M14 NESG3032M14 SiGe Transistor 0.6 @ 2.0 GHz 17.5 @ 2.0 GHz +12.5 M14 NESG3033M14 SiGe Transistor 0.6 @ 2.0 GHz 17.5 @ 2.0 GHz +12.5 M14 NESG4030M14 SiGe Transistor 1.1 @ 5.8 GHz 11.5 @ 5.8 GHz +9 M14 SiGe:C Transistor 0.75 @ 5.8 GHz 14 @ 5.8 GHz +4.5 M04 NESG7030M04 3 Notes: 1. Adjustable current device, under development, please inquire 2. NE3509M14 under development, please inquire 3. Under development, please inquire 7 802.15.4 Transceiver UPG225x Front End ICs OUT 2.4 & 5.8 GHz WLAN / Wi-Fi UPGxxxx Power Low Power SP3T Switches Single and multi-throw switches and discrete Silicon and GaAs low noise Amplifiers RFICamplifiers Switchesdesigned specifically for Dual Band WLAN LNAs 2.4 GHz 5 - 6 GHz Chipset Transceiver 2.4 GHz Choose Single or Multi Throw RFIC Switches 5 - 6 GHz GaAs RFIC Switches to 2.5 GHz -- Single & Multi Throw UPG2179TB SPDT, 0.3 dB Insertion Loss @ 2 GHz, industry-standard package UPG2406T6R SPDT, 0.45 dB Insertion Loss @ 2 GHz, +22.0 dBm PIN(0.1dB) @ +1.8 VCONT UPG2406TK SPDT, 1.8 or 2.7V control voltage, 0.45 dB Insertion Loss @ 2 GHz UPG2418TB/T6X SPDT, 50 W termination, 0.45 dB Insertion Loss, 21 dB Isolation @ 2 .5 GHz UPG2150T5L SP3T, 0.5 dB Insertion Loss, 35 dB Isolation between ports @ 2 .5 GHz UPG2405T6Q SP3T, 0.60 dB Insertion Loss, 20 dB Isolation @ 2 .5 GHz UPG2413T6M SP3T, 0.5 dB Insertion Loss, 18 dB Isolation @ 2 .5 GHz, 12 pin package UPG2413T6Z SP3T, 0.5 dB Insertion Loss, 18 dB Isolation @ 2 .5 GHz, 8 pin package GaAs RFIC Switches - Broadband to 6GHz UPG2163T5N SPDT, Insertion Loss: 0.4 dB @ 2.4 GHz, 0.5 dB @ 6 GHz UPG2185T6R SPDT, Insertion Loss: 0.4 dB @ 2.5 GHz, 0.5 dB @ 6 GHz, 25 dB Isolation @ 6 GHz UPG2422TK SPDT for Dual Band WLAN, very cost-effective UPG2411T7C SPDT for Dual Band WLAN, Insertion Loss: 0.6 dB @ 2.5 GHz, 0.8 dB @ 6 GHz UPG2411T6R SPDT for Dual Band WLAN, Insertion Loss: 0.4 dB @ 2.5 GHz, 0.5 dB @ 6 GHz, 1.8V specifications UPG2428T7F1 SPDT for Dual Band WLAN, 1mm package with 0.5mm pitch UPG2415TK / T6X SPDT for Dual Band WLAN, high power, low insertion loss for Access Point applications UPG2162T5N DPDT, Insertion Loss: 0.6 dB @ 2.4 GHz, 0.85 dB @ 5.5 GHz UPG2164T5N DPDT, Insertion Loss: 0.5 dB @ 2.4 GHz, 0.7 dB @ 5.5 GHz UPG2430T6Z SP3T, Insertion Loss: 0.65 dB @ 6 GHz; 1.8V specifications 1 LNAs NESG3031M05 / M14 SiGe HBT, 1.1 dB Noise Figure, 9.5 dB Gain @ 2.4 GHz NESG3032M14 SiGe HBT, 0.6 dB Noise Figure, 17.5 dB Gain @ 2.0 GHz NESG3033M14 SiGe HBT, 0.6 dB Noise Figure, 17.5 dB Gain @ 2.0 GHz, built-in ESD protection NESG4030M14 SiGe HBT, 1.1 dB Noise Figure, 11.5 dB Gain @ 5.8 GHz, built-in ESD protection NESG7030M041 SiGe:C HBT, 0.75dB Noise Figure, 14 dB Gain@ 5.8GHz, built-in ESD protection Notes: 1. Under development, please inquire 8 WiMAX Single and multi-throw switches and transistor and RFIC low noise amplifiers designed specifically for WiMAX RFIC & Transistor LNAs WiMAX Transceiver WiMAX Transceiver RFIC Switches Multi-Throw Switches GaAs RFIC Switches UPG2176T5N SPDT 2.4 - 6 GHz, Insertion Loss: 0.5 dB @ 2.4 GHz, 0.7 dB @ 5.5 GHz, internal termination UPG2409 TB SPDT 2.0 - 4.0 GHz, Insertion Loss: 0.45 dB @ 2.5GHz, 0.6 dB @ 3.8 GHz UPG2409 T6X SPDT 2.0 - 6.0 GHz, Insertion Loss: 0.45 dB @ 2.5 GHz, 0.65 dB @ 6 .0 GHz GPS + 40 dBm DP4T for antenna diversity and Tx / Receiver Rx switching, 1 dB Insertion Loss, 24 dB Isolation @ 3.5 GHz UPG2181T5R IC Loss LNAs RFIC Transistor &Low RFIC Pre-Filter LNA High Rejection Post-Filter NESG3031M05 / M14 High fT SiGe HBT, 0.6 dB Noise Figure, 16 dB Gain @ 2.5 GHz NESG7030M041 SiGe:C HBT, 0.75dB Noise Figure, 14 dB Gain@ 5.8GHz, built-in ESD protection NE3508M04 GaAs HJ FET, super low 0.45 dB noise figure, 14 dB gain @ 2.5 GHz, high linearity Notes: 1. Under development, please inquire Tuner/ Receiver FIRST STAGE Filter SECOND STAGE THIRD STAGE 9 GaAs RFIC Switches: Single & Multi-Throw SPDT Dual Control Switches (Generally Specified to 3GHz) TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25C) Frequency range: 0.1 to 2.5 GHz Part Number Control Voltages (V) Features Insertion Loss @2GHz (dB) Isolation @2GHz (dB) Input Power @0.1 dB compression point Input Power @1.0 dB compression point Package Code TB UPG2009TB High Power/High Linearity +2.8/0 0.30 28 +34 dBm NA UPG2030TK Medium Power, Versatile +2.8/0 0.30 27 +27 dBm +30 dBm TK UPG2155TB High Power, Low Harmonics +2.6/0 0.40 19 +37dBm NA TB UPG2158T5K Smallest Package, WiFi Reference Designs +2.7/0 0.45 19 +29dBm 30.5dBm T5K UPG2159T6R Low Insertion Loss, Small Pkg +1.8, 2.7/0 0.23 27 +22 dBm +25.5 dBm T6R UPG2179TB Industry's best medium power +3.0/0 0.30 27 +29 dBm +32 dBm TB UPG2214TB Hi Perfomance @ 3.0 or 1.8 V +1.8, 3.0/0 0.30 27 +23 dBm +20 (1.8V), 26(3.0V) TB UPG2214TK Hi Perfomance @ 3.0 or 1.8 V +1.8, 3.0/0 0.30 27 +23 dBm +20 (1.8V), 26(3.0V) TK UPG2406TK Medium Power, L, S Band +1.8, 2.7/0 0.45 19 +29 dBm +25 (1.8V), 30.5 (3.0V) TK T6R UPG2406T6R Medium Power, Small Pkg 2.7/0 0.45 19 +29 dBm +30.5 UPG2408TK Medium Power, compact +3.0/0 0.48 19 +29 dBm - TK UPG2418TB Internally terminated +3.0/0 0.45 21 +29 dBm +32dBm TB UPG2418T6X Internally terminated +3.0/0 0.37 23 +29dBm +32 T6X Single & Multi-Throw Switches TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25C) Part Number Features Control Voltages (V) Insertion Loss (dB) Isolation (dB) Input Power @ 0.1 dB compression point 0.50@2.5GHz 35@2.5GHz NA UPG2150T5L SP3T / WLAN, B'Tooth +2.85/0 UPG2181T5R DP4T / WiMAX +3.0/0 UPG2183T6C SP4T / High Power +3.0/0 UPG2189TB SPST / High Power +2.6 / 0 Input Power @1.0 dB compression point Package Code +25dBm1 T5L +31dBm 2 1.0@3.8GHz 24@3.8GHz NA 0.4@0.9GHz 24 @ 0.9 GHz +37.5dBm @ 0.9 GHz 0.55 @ 2GHz 19 @ 2GHz +35dBm @ 2GHz 0.35 @ 2GHz 13.5 @ 2GHz +37 dBm 40Tx / 35Rx dBm T5R NA T6C NA TB UPG2404T6Q SP3T / High Power +2.8/0 0.55 @ 2GHz 21 @ 2GHz +33dBm NA T6Q UPG2405T6Q SP3T / WiFi, B'Tooth +2.8/0 0.60 @2.5GHz 20 @2.5 GHz +31dBm NA T6Q UPG2413T6M SP3T / Med Power +3.0/0 +28dBm +33 dBm T6M UPG2413T6Z SP3T / Med Power +3.0/0 +28dBm +31dBm T6M 0.4 @ 1GHz 26 @ 1GHz 0.5 @ 2.5GHz 18 @ 2.5GHz 0.4 @ 1GHz 26 @ 1GHz 0.5 @ 2.5GHz 18 @ 2.5GHz UPG2417T6M SP6T / NFC +2.85/0 0.5@13.56GHz 50@13.56GHz +32dBm NA T6M UPD5731T6M SP4T CMOS Low Power +2.8/0 1.3@2GHz 26@2GHz +17dBm +20dBm T6M UPD5738T6N DPDT Wide Band CMOS +2.8/0 0.8 @ 1GHz 22 @ 1GHz +15dBm +20dBm T6N +28dBm +31dBm +23dBm +25dBm UPG2430T6Z 3 SP3T/66Hz, low insertion loss +3.0/0 +1.8/0 0.65@6GHz 25@6GHz T6Z Notes: 1. Port 3 2. Ports 1 and 2 3. Under development, please inquire SPDT Single Control Switches Part Number TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25C) Frequency range: 0.1 to 2.5 GHz Features Control Voltages (V) Insertion Loss @2GHz (dB) Isolation @2GHz (dB) Input Power @0.1 dB compression point Input Power @1.0 dB compression point Package Code UPD5713TK Low Cost CMOS +2.8/0 0.80 25 +17 dBm +21 dBm TK UPG2010TB High Power +2.8/0 0.30 28 +33 dBm NA TB UPG2012TB Low Power +2.8/0 0.30 28 +20.5 dBm +24 dBm TB UPG2012TK Miniature, Low Power +2.8/0 0.30 28 +20.5 dBm +24 dBm TK UPG2015TB Medium Power +2.8/0 0.30 28 +27 dBm +30 dBm TB UPG2156TB High Power +2.6/0 0.45 17.5 +37 dBm NA TB 10 GaAS RFIC Switches: Broadband & MobileComm Broadband SPDT and DPDT Switches to 6GHz TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25C) Part Number UPG2162T5N UPG2163T5N UPG2164T5N UPG2176T5N UPG2185T6R UPG2409TB UPG2409T6X UPG2411T6R UPG2411T7C UPG2415TK UPG2415T6X UPG2419T6R UPG2422TK UPG2428T7F1 Control Voltages (V) Description DPDT 2.4 - 2.5 GHz +3.0/0 4.9 - 6.0GHz SPDT 2.0 - 6.0GHz +3.0/0 High Performance DPDT 2.4 - 2.5 GHz +3.0/0 4.9 - 6.0GHz For WiMAX +3.0/0 SPDT 2.0 - 6.0GHz +3.0/0 High Performance SPDT High Power +3.0/0 for WiMAX, WLAN SPDT High Power +3.0/0 for WiMAX, WLAN Insertion Loss (dB) Isolation (dB) 0.6 @ 2.4GHz 30 @ 2.4 GHz 0 .85 @ 5.5GHz 27 @ 5.5 GHz 0.4 @ 2.5GHz 35 @ 2.5GHz 0.5 @ 6GHz 30 @ 6GHz 0.5 @ 2.4GHz 25 @ 2.4GHz 0.7 @ 5.5GHz 17 @ 5.5GHz 0.55 @ 3.5GHz 24 @ 3.5GHz 0.55 @ 3.5GHz 26 @ 2.5GHz 0.5 @ 6GHz 25 @ 6GHz 0.45 @ 2.5GHz 26 @ 2.5 GHz 0.60 @ 3.8GHz 19 @ 3.8GHz 0.45@ 2.5GHz 30 @ 2.5 GHz 0.65@6GHz 27 @6 GHz SPDT Dual Band WLAN +3.0/0 0.5@ 2.5GHz 802.11a/b/g, MIMO +1.8/0 0.6@ 6GHz SPDT Dual Band WLAN +3.0/0 802.11a/b/g, MIMO SPDT Dual Band WLAN +3.0/0 802.11a/b/g, MIMO SPDT Dual Band WLAN +3.0/0 802.11a/b/g, MIMO SPDT, 2.4-6GHz TransferJet, Bluetooth Integrated capacitors SPDT Dual Band WLAN, 802.11a/b/g,n SPDT Dual Band WLAN 802.11a/b/g, MIMO +3.0/0 +3.0/0 +3.0/0 Input Power @0.1 dB compression point 0.5@ 2.5GHz 0.7@ 6GHz 25 @ 6GHz 20 @ 6GHz 0.45 @ 2.5GHz 28 @ 2.5 GHz 0.65 @ 6GHz 26 @6 GHz 0.45 @ 2.5GHz 28 @ 2.5 GHz 0.55 @ 6GHz 26 @6 GHz 0.45@ 5GHz 17-26@ 5GHz 0.35@ 2.5GHz, 28@ 2.5GHz 0.55@ 6GHz 24@ 6GHz 0.45@2.5GHz 24@2.5GHz 0.60@@6GHz 24@6GHz Input Power @1.0 dB compression point - - - 31dBm 29 dBm +35@2.5GHz +29@6GHz 31dBm 29 dBm Package Code T5N T5N T5N - +37dBm T5N + 29 dBm +30.5dBm T6R +33.5dBm +35dBm TB +34dBm +36 dBm T6X +28dBM +30.5dBm +23dBM +27dBm - +30.5dBm T7C +31dBm +34 dBm TK +31dBm +35 dBm T6X - +24dBm T6R +28dBm@2-6GHz +31dBm@6GHz TK +28dBm - T7F T6R Notes: 1. Under development, please inquire MobileComm Antenna Switches Part Number Description Ports Control SP8T 3x GSM Rx Package Code Package Style T6E 20-pin TQFN T7E 26-pin QFN 0.4dB Ins Loss @ GSM LB Tx 3x WCDMA UPG2193T6E Typical Perfomance at TA = 25C, 50 ohms SPI 2x GSM Tx 0.6 dB Ins Loss @ GSM HB Tx -80dBc 2f 0, 3f 0 @ GSM LB/HB Tx +110dBm IIP2 @ WCDMA-ANT 0.45 Ins Loss WCDMA LB 5x WCDMA UPG2424T7E SP10T 3x GSM Rx 2x GSM Tx 0.65 Ins Loss WCDMA HB GPIO 0.80 Ins Loss GSM LB 4 Line 0.90 Ins Loss GSM HB -80dBc 2f 0, 3f 0 @ GSM LB/HB Tx -110 dBm IMD3 Note: Please check with CEL for details on other antenna switches and modules 11 GaAs Devices: FETs, RFIC LNAs & Power Amplifiers Low Noise GaAs FETs, 100 MHz to 20 GHz Gate Gate Length Width (m) (m) Part Number NE3503M04 0.2 Typical Specifications @ TA = 25C Recommended Frequency Range (GHz) Test Frequency (GHz) 2 to 18 12 160 NF/GA Bias VDS (V) IDS (mA) 2.0 10 NFOPT (dB) GA (dB) 0.55 11.5 Power Bias VDS (V) IDS (mA) -- -- P1dB (dBm) Chip / Package Code Chip / Package Description -- M04 Plastic SMD NE3508M04 0.6 800 1 to 6 2 2.0 10 0.40 14.0 3.0 30 +18.0 M04 Plastic SMD NE3509M04 0.6 400 1 to 6 2 2.0 10 0.45 17.5 3.0 20 +14.0 M04 Plastic SMD NE3509M14 0.6 400 1 to 6 2 2.0 10 0.4 18.5 2.0 10 +11.0 M14 Plastic SMD NE3510M04 0.6 280 1 to 6 2 2.0 10 0.35 19.0 3.0 30 +12.0 M04 Plastic SMD NE3511S02 0.2 160 4 to 18 12 2.0 10 0.30 13.5 -- -- -- S02 Micro-X Plastic Micro-X Plastic NE3512S02 0.2 160 4 to 18 12 2.0 10 0.35 13.5 -- -- -- S02 NE3513M04 0.2 160 10 to 14 12 2.0 6 0.45 13.0 -- -- -- M04 Plastic SMD NE3514S02 0.2 160 4 to 20 20 2.0 10 0.75 10.0 -- -- -- S02 Micro-X Plastic 0.2 200 6 to 18 12 2.0 10 0.3 12.5 3.0 25 +14.0 S02 Micro-X Plastic 0.2 160 6 to 18 12 2.0 10 0.35 14.0 -- -- -- S02 Plastic SMD NE3517S03 -- 160 10 to 26 20 2.0 10 0.7 13.5 3.0 15 +12.0 S03 Micro-X Plastic NE3519M04 0.6 400 1 to 6 2 2.0 10 0.40 18.5 2.0 10 +11 M04 Plastic SMD NE3520S03 -- 160 10 to 26 20 2.0 10 0.65 13.5 -- -- -- S03 Micro-X Plastic NE3515S02 NE3516S02 1 Notes: 1. Under development, please inquire GaAs RFIC Power Amplifiers for Handset and Wireless Applications ELECTRICAL CHARACTERISTICS (TA = 25C) Part Number Frequency Range (MHz) Test Conditions Output Power (dBm) Power Added Efficiency (%) +31.5 TYP 50 TYP +20 TYP 55 TYP Package Style f = 915 MHz UPG2118K 410 to 2500 PIN = 0 dBm VD = 3.2 V K Description 3 stage E-Mode Power Amplifier IC Application AMR, ISM f = 2450 MHz 868 to 2500 UPG2250T5N PIN = 0 dBm VDD = 1.8 V T5N f = 2450 MHz 868 to 2500 PIN = 0 dBm VDD = 3.0 V 2400 to 2500 PIN = -5dBm VDD = 3.0 V UPG2301T5L 868 to 2500 PIN = +4 dBm VCC = 3.3 V UPG2314T5N 868 to 2500 Bluetooth, ZigBee, ISM +25 TYP 58 TYP +25 TYP 47 TYP T6M 3.0V Power Amplifier IC with internal matching Bluetooth, ZigBee, ISM +23 TYP 50 TYP T5L 2 stage HBT Power Amplifier Bluetooth, ZigBee, ISM +20 TYP 50 TYP T5N Low current HBT, miniature package Bluetooth, ZigBee, ISM f = 2450 MHz UPG2251T6M 1.8 to 3.5 V Power Amplifier IC f = 2450 MHz f = 2450 MHz 12 PIN = 0 dBm VCC = 3 V GaAs Devices: Integrated Front End ICs Front End ICs for Handset and Wireless Applications ELECTRICAL CHARACTERISTICS (TA = 25C) Part Number UPG2253T6S Frequency Range (MHz) 2400 to 2500 Test Conditions Output Power (dBm) Power Added Efficiency (%) f = 2450 MHz PIN = 0 dBm VDD = 3.0 V +19 to +21 TYP 28 TYP Package Style Description Application T6S +19 to +21 dBm GaAs RFIC: PA, 2 SPDTs, filter, Tx/Rx bypass path Bluetooth, ZigBee, ISM GaAs CATV Hybrid Amplifiers Push-Pull CATV Hybrid Amplifiers (VDD = 24V, ZS = ZL = 75 ) Frequency (MHz, min - max) Gain (dB, min - max) CTB1 (dBc, max) CSO1 (dBc, max) X-MOD1,2 (dBc, max) NF 3 (dB, max) IDD (mA, max) MC-7831 50 - 870 18.0 - 19.0 -57 -57 -50 7.0 240 MC-7831-HA 40 - 1000 18.0 - 19.0 -57 -57 -50 7.0 240 MC-7832 50 - 870 22.0 - 23.0 -57 -57 -50 6.5 240 MC-7832-HA 40 - 1000 22.0 - 23.0 -57 -57 -50 6.5 240 MC-7833 50 - 870 25.0 - 26.0 -57 -57 -50 6.0 240 MC-7834-KC 4 50 - 870 20.0 - 21.0 -59 -59 -52 7.0 325 MC-7836 50 - 870 27.0 - 28.0 -58 -58 -52 6.0 260 Part Number Notes: 1. Distortion measurements at VOUT = 44 dBm V flat, 110 channels. 2. Measured using EIAJ methods and procedures. 3. Noise Figure measured at 870 MHz. 4. Higher current device for better X-mod and crash point performance. Power Doubler CATV Hybrid Amplifiers (VDD = 24V, ZS Part Number Freqency Gain (MHz, min - max) (dB, min - max) = ZL = 75 ) CTB (dBc, typ) CTB (dBc,max) CSO (dBc, typ) X-MOD1 (dBc, typ) X-MOD1 (dBc, max) IDD (mA, max) MC-7845 2 50 - 870 18.0 - 19.0 -63 -60 -68 -59 -63 375 MC-7846 2 50 - 870 22.0 - 23.0 -63 -60 -67 -60 -63 375 50 - 870 25.0 - 26.0 -65 -60 -67 -62 -63 375 MC-7847 2 50 - 870 25.0 - 26.0 - -60 - - -63 420 MC-7881 4 50 - 870 18.0 - 19.0 - -60 - - -63 360 MC-7882 4 50 - 870 20.0 - 21.0 - -60 - - -63 360 MC-7883 4 50 - 870 22.0 - 23.0 - -60 - - -63 360 MC-7884 4 50 - 870 25.0 - 26.0 - -60 - - -63 360 MC-7891 MC-7847-KC 3 40 - 1000 18.0 - 19.5 - -63 - - -65 385 5 40 - 1000 22.5 - 24.0 - -63 - - -65 385 MC-7894 5 40 - 1000 24.5 - 25.5 - -63 - - -65 385 MC-7896 40 - 1000 27.0 - 28.0 - -63 - - -65 385 5 MC-7893 Notes: 5 1. 2. 3. 4. 5. Measured using EIAJ methods and procedures. Distortion measurements are made with 110 channels loading, VOUT = +50 dBmV at 745.25 MHz, 10 dB tilted across the band. Higher current device for better X-mod and crash point performance. Distortion measurements are made with 110 channels loading, VOUT = +52 dBmV at 745.25 MHz, 10 dB tilted across the band. Distortion measurements are made with 77 channels loading, VOUT = +52 dBmV at 547.25 MHz, 7 dB tilted across the band. 13 Silicon LD-MOSFET Power Devices Silicon LD-MOSFETs Typical Specifications @ TC = 25C POUT (dBm) TYP Part Number Test Conditions Linear Gain (dB) TYP Freq (GHz) PIN (dBm) VDS (V) IDSQ (mA) Package Description NE552R479A +26.0 11 2.45 +19 3.0 200 79A Pkg: Compact SMT NE5511279A +40.0 15.0 0.9 +27 7.5 400 79A Pkg: Compact SMT NE5520279A +32.0 10 1.8 +25 3.2 700 79A Pkg: Compact SMT +35.5 16 0.9 +33.0 8.5 1.8 +25 3.2 600 79A Pkg: Compact SMT NE5531079A +40.0 20.5 0.46 +25 7.5 200 79A Pkg: Compact SMT NE55410GR +40.4 25 2.1 +16 28 120 GR Pkg: 16 pin plastic HTSSOP NE5500234 +32.5 11 1.9 +25 4.8 400 34 Pkg: Compact SMT +35.0 14 0.9 +25 4.8 600 34 Pkg: Compact SMT 200 79A Pkg: Compact SMT NE5520379A NE5500434 NE5550979A +39.4 1 22 0.46 +25 7.5 Notes: 1. Under development, please inquire Small Signal Silicon Bipolar Transistors Silicon Transistors NF /GA Part Number TEST f (GHz) VCE (V) NE661M04 2.0 NE662M04 2.0 NE662M16 MAG/MSG ICQ (mA) NF TYP (dB) GA TYP (dB) VCE (V) IC (mA) TYP (dB) fT TYP (GHz) hFE TYP IC MAX (mA) 2 2 1.2 16 2 10 22 22 100 10 M04 Pkg: 4 pin low profile SOT-343 style 2 5 1.1 16 2 20 20 23 70 35 M04 Pkg: 4 pin low profile SOT-343 style 2.0 2 5 / 20 1.1 17 2 20 19 25 70 35 M16 Pkg: 6 pin low profile, recessed leads NE66219 2.0 2 5 1.5 12.0 2 20 14 21 80 35 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NE68018 2.0 6 5 1.8 10.0 1 1 12.5 10 100 35 18 Pkg: 4 pin Super Mini Mold NE68019 2.0 3 5 1.9 9.0 1 1 12.0 8 120 35 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NE68030 2.0 6 5 1.7 9.5 6 10 8.5 10 100 35 30 Pkg: 3 pin Super Mini Mold, SOT-323 style NE68033 2.0 6 5 1.8 9.0 6 10 8.0 10 100 35 33 Pkg: 3 pin Mini Mold, SOT-23 style NE68039 2.0 6 5 1.7 11.0 6 10 9.0 10 100 35 39 Pkg: 4 pin Mini Mold NE68118 1.0 2.5 3 1.1 13.0 2.5 3 16.0 9 100 65 18 Pkg: 4 pin Super Mini Mold NE68119 1.0 2.5 3 1.1 12.0 2.5 3 15.5 7 120 65 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NE68130 1.0 8 7 1.5 13.5 8 20 13.0 7 120 65 30 Pkg: 3 pin Super Mini Mold, SOT-323 style NE68133 1.0 8 7 1.2 13.0 8 20 11.0 9 100 65 33 Pkg: 3 pin Mini Mold, SOT-23 style NE68139 1.0 8 7 1.2 13.5 8 20 15.0 9 100 65 39 Pkg: 4 pin Mini Mold, SOT-143 style NE68518 2.0 2.5 3 1.5 8.5 2.5 3 12.0 12 110 30 18 Pkg: 4 pin Super Mini Mold NE68519 2.0 2.5 3 1.5 7.5 2.5 3 11.0 12 110 30 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NE68539 2.0 2.5 3 1.5 7.5 2.5 3 11.5 12 110 35 39 Pkg: 4 pin Mini Mold, SOT-143 style NE68618 2.0 1 3 1.5 9 1 3 13 15 100 10 18 Pkg: 4 pin Super Mini Mold NE68619 2.0 1 3 1.5 8.5 1 3 12.5 12 100 10 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NE68718 2.0 1 3 1.3 8 1 3 11 13 100 30 18 Pkg: 4 pin Super Mini Mold NE68719 2.0 1 3 1.3 7.5 1 3 10 9 100 30 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NE851M13 2.0 1 10 1.9 5.5 1 5 4.0 6.5 120 100 M13 Pkg: 3 pin low profile, ultra-miniature NE85618 1.0 2.5 3 1.4 11.0 2.5 3 14.0 6.5 120 100 18 Pkg: 4 pin Super Mini Mold NE85619 1.0 2.5 3 1.5 10.0 2.5 3 13.5 4.5 120 100 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NE85630 1.0 10 7 1.3 12.0 10 20 12.0 4.5 110 100 30 Pkg: 3 pin Super Mini Mold, SOT-323 style NE85633 1.0 10 7 1.4 9.0 10 20 11.5 7 120 100 33 Pkg: 3 pin Mini Mold, SOT-23 style Package Description NE85639 1.0 10 7 1.5 13.5 10 20 13.0 7 120 100 39 Pkg: 4 pin Mini Mold, SOT-143 style NE894M13 2.0 1 5 1.4 13 1 20 13.0 20 80 35 M13 Pkg: 3 pin low profile, ultra-miniature NE97733 1.0 -8 -3 1.5 10.0 -8 -20 12.0 8.5 60 -50 33 Pkg: 3 pin Mini Mold, SOT-23 style (PNP) NE97833 1.0 - 10 -3 2.0 7.0 -10 -15 10.0 5.5 40 -50 33 Pkg: 3 pin Mini Mold, SOT-23 style (PNP) 14 Small Signal & Medium Power Transistors, Cordless Phone Devices SiGe Transistors NF /GA MAG/MSG ICQ (mA) NF TYP (dB) GA TYP (dB) VCE (V) IC (mA) TYP (dB) fT TYP (GHz) hFE TYP IC MAX (mA) 2 3 0.9 18.0 3 10 22.5 25 195 35 M05 Pkg: 4 pin low profile SOT-343 style 5.2 2 3 1.3 10.0 -- -- -- -- 195 35 M05 Pkg: 4 pin low profile SOT-343 style 2 2 3 0.9 18 3 10 22.5 25 190 35 M16 Pkg: 6 pin low profile, recessed leads NESG2031M05 2 2 5 0.8 17.0 3 20 21.5 -- 195 35 M05 Pkg: 4 pin low profile SOT-343 style NESG2031M05 5.2 2 5 1.3 10.0 -- -- -- -- 195 35 M05 Pkg: 4 pin low profile SOT-343 style NESG2031M16 5.2 2 5 1.3 10 3 20 21.5 25 190 35 M16 Pkg: 6 pin low profile, recessed leads NESG204619 2 1 3 0.8 11.0 -- -- -- 18 180 40 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NESG2101M16 2 2 10 0.9 13.0 3 50 17.0 17 190 100 M16 Pkg: 6 pin low profile, recessed leads Part Number TEST f (GHz) VCE (V) NESG2021M05 2 NESG2021M05 NESG2021M16 NESG210719 Package Description 2 1 5 0.9 9.0 -- -- -- 10 180 100 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NESG3031M05 5.2 2 6 0.95 10.0 -- -- -- -- 300 35 M05 Pkg: 4 pin low profile SOT-343 style NESG3031M05 5.8 2 6 1.1 9.5 3 20 14.0 -- 300 35 M05 Pkg: 4 pin low profile SOT-343 style NESG3031M14 5.2 2 6 0.95 10.0 -- -- -- -- 300 35 M14 Pkg: 4 pin low profile, recessed leads NESG3031M14 5.8 2 6 1.1 9.5 3 20 15.0 -- 300 35 M14 Pkg: 4 pin low profile, recessed leads NESG3032M14 2.0 2 6 0.6 17.5 3 20 20.5 -- 300 35 M14 Pkg: 4 pin low profile, recessed leads NESG3033M14 2.0 2 6 0.6 17.5 3 20 20.5 -- 300 35 M14 Pkg: 4 pin low profile, recessed leads NESG4030M14 5.8 2 6 1.1 11.5 -- -- -- -- 400 35 M14 Pkg: 4 pin low profile, recessed leads 5.8 2 5 0.75 14 2 15 17.5 -- 320 30 M04 Pkg: 4 pin low profile SOT-343 style NESG7030M04 1 Notes: 1. Under development, please inquire Medium Power Silicon Transistors MAG / MSG P1dB TEST f (GHz) VCE (V) ICQ (mA) TYP (dBm) VCE (V) IC (mA) TYP (dB) fT TYP (GHz) hFE TYP IC MAX (mA) NE46134 1.0 12.5 100 27.5 10 50 9 5.5 100 250 34 Pkg: 4 pin SOT-89 style NE461M02 1.0 12.5 100 27.5 10 50 11 5.5 120 250 M02 Pkg: 4 pin high gain SOT-89 style NE663M04 2.0 2 50 16 2 50 15 18 100 100 M04 Pkg: 4 pin low profile SOT-343 style NE664M04 1.8 3.6 200 26 3 100 12 20 60 500 M04 Pkg: 4 pin low profile SOT-343 style NE677M04 1.8 2.8 23 15 3 20 16 15 120 50 M04 Pkg: 4 pin low profile SOT-343 style NE678M04 1.8 2.8 40 18 3 30 13.5 12 120 100 M04 Pkg: 4 pin low profile SOT-343 style NE85634 1.0 10 40 22 10 40 11 6.5 120 100 34 Pkg: 4 pin SOT-89 style Part Number NE856M02 NESG2101M05 1 1 Package Description 1.0 10 40 22 10 50 14 6.5 120 100 M02 Pkg: 4 pin high gain SOT-89 style 2.0 3.6 10 21 3 50 17 17.0 195 100 M05 Pkg: 4 pin low profile SOT-343 style 3.6 100 23 10 120 500 34 Pkg: 4 pin SOT-89 style 0.5 3.6 3.6 29 1 0.9 3.6 3.6 29 - - - 10 120 500 34 Pkg: 4 pin SOT-89 style 1 0.46 6.0 6.0 30 6 100 23 15 120 600 34 Pkg: 4 pin SOT-89 style 1 0.9 6.0 6.0 30 - - - 10 120 600 34 Pkg: 4 pin SOT-89 style 1 0.46 6.0 6.0 33.5 - - - 15 120 750 34 Pkg: 4 pin SOT-89 style NESG270034 1 0.9 6.0 6.0 31.5 - - - 15 120 750 34 Pkg: 4 pin SOT-89 style UPA901TU 5.8 3.6 3.6 19 3.6 52 25 - 120 300 TU Pkg: 8 pin Mini Mold NESG250134 NESG250134 NESG260234 NESG260234 NESG270034 Note: 1. SiGe part Silicon Transistors For Cordless Phones Frequency Range P1dB (dBm) Linear Gain (dB) Collector Efficiency (%) VCE (V) Frequency (MHz) NE68939 500-2000 24.5 8 62 3.6 1900 39 Pkg: 4 pin Mini Mold, SOT-143 style NE69039 500-2000 27.5 6 72 3.6 1900 39 Pkg: 4 pin Mini Mold, SOT-143 style Part Number Package Description 15 Silicon Transistors: Twin Packages, Chips, Oscillator & Switching Devices Twin Transistors TEST nf/ga nf/ga vce ic f (mA) (GHz) (V) Part Number fT NF IC GA |S21e | 2 TYP TYP hFE MAX IC TYP TYP MAG VCE (dB) (dB) (dB) (V) (mA) (dB) (GHz) TYP (mA) Pkg. Code Package Style Die Twin Transistors in a single package -- Matched Die UPA800T 2.0 3 5 1.9 9.0 12.0 3 5 UPA801T 1.0 3 7 1.2 10.0 14.0 3 UPA802T 1.0 3 7 1.4 14.0 16.0 3 UPA806T 2.0 3 3 1.5 7.5 11.0 UPA807T 2.0 2 3 1.5 UPA808T 2.0 2 3 1.3 UPA810T 1.0 3 7 1.2 UPA811T 2.0 3 5 UPA812T 1.0 3 7 7.5 8 120 35 S06 SOT-363 NE680 7 9.0 4.5 120 100 S06 SOT-363 NE856 7 12.0 7.0 100 65 S06 SOT-363 NE681 3 10 8.5 12.0 110 30 S06 SOT-363 NE685 10.0 13.5 2 7 9.0 13.0 100 10 S06 SOT-363 NE686 8.0 2 20 8.5 11.0 100 30 S06 SOT-363 NE687 SOT-363 NE856 11.0 10.0 14.0 3 7 1.9 9.0 12.0 3 5 1.4 14.0 16.0 3 7 9.0 S06 4.5 120 100 7.5 8 120 35 S06 SOT-363 NE680 12.0 7.0 100 65 S06 SOT-363 NE681 NE687 NE851 S06 UPA828TD 2.0 2 3 1.3 10.0 11 2 20 8.5 11.0 100 30 TD Miniature Recessed Leads UPA895TD 2.0 1 10 1.9 9.0 10.0 1 15 5.5 5 120 100 TD Miniature Recessed Leads 11 TD Miniature Recessed Leads NE687 TD Miniature Recessed Leads NE685 TD Miniature Recessed Leads NE687 Twin Transistors in a single package -- Mixed Die UPA861TD UPA862TD UPA863TD (Q1) 2.0 1 3 1.5 1 10 9 12 105 30 (Q2) 2.0 1 5 1.4 12.5 13.5 1 20 13 20 75 35 (Q1) 2.0 3 3 1.5 9.5 12.5 3 10 8.5 12 110 30 (Q2) 2.0 1 10 1.9 9 10 1 15 5.5 6.5 120 100 (Q1) 2.0 1 3 1.5 9 11 1 10 9 12 105 30 (Q2) 2.0 1 10 1.9 9 10 1 15 5.5 6.5 120 100 9 NE894 NE851 NE851 Silicon Transistor Chips Part Number TEST f (GHz) nf/ga vce (V) nf/ga ic (mA) NF TYP (dB) MAG TYP (dB) GA TYP (dB) |S21e|2 VCE (V) IC (mA) TYP (dB) fT TYP (GHz) hFE TYP IC MAX (mA) Pkg. Code Die NE46100 1.0 10 50 2.0 7.0 9.8 10 100 10 5.5 100 250 00 NE461 ne66100 2.0 2 2 1.2 16.5 22.0 2 5 17 25 70 12 00 NE661 ne66200 2.0 2 5 1.1 16.0 19.0 2 20 17 25 70 35 00 NE662 ne66300 2.0 2 10 1.2 17.5 14.0 2 50 11 25 70 100 00 NE663 ne68000 4.0 6 5 2.6 8.0 12.5 6 10 9.0 10.0 100 35 00 NE680 ne68100 2.0 8 7 1.6 12.0 19 8 20 14.0 9.0 100 65 00 NE681 2.0 10 7 2.1 10.0 16 10 20 9.0 7.0 120 100 00 NE856 2.4 / 5.8 2 6 0.6 /1.1 16.0 / 9.5 14 3 20 8.5 110 300 35 00 NESG3031 ne85600 NESG303100G Silicon Oscillator Transistors POSC Part Number f (GHz) VCE (V) IC (mA) TYP (W) fT TYP (GHz) hFE TYP IC MAX (mA) Pkg. Code 0.9 5.0 5.0 0.001 5.0 90 60 19 NE58219 Package Description 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style Silicon Switching Transistors Typical Switching Times |S21e|2 Part Number CCB VCB (V) CCB TYP (pF) fT TYP (GHz) VCE (V) NE68100 10 0.2 9.0 8 15 0.3 - 0.2 - 2.0 8 20 11.0 100 65 00 Chip NE68118 10 .25 9.0 8 15 0.4 - 0.3 - 1.0 8 20 15.0 100 65 18 18 Pkg: 4 pin Super Mini Mold NE68119 3 .45 7.0 8 15 0.6 - 0.5 - 1.0 3 7 12.0 100 65 19 19 Pkg: 3 pin SC-90 style NE68133 10 .35 9.0 8 15 0.4 - 0.3 - 1.0 8 20 13.0 100 65 33 33 Pkg: 3 pin SOT-23 style 16 IC Td (ON) Tr Td (OFF) (mA) (ns) (ns) (ns) Tf (ns) f VCE IC TYP (GHz) (V) (mA) (dB) IC hFE MAX TYP (mA) Pkg. Code Package Description Silicon RFICs: Low Power & Wideband Amplifiers Low Power Amplifiers Typical Frequency Range @ 3dB VCC down (V) (MHz) Part Number ELECTRICAL CHARACTERISTICS1 (TA = 25C) NF (dB) ICC (mA) Gain (dB) RLIN (dB) RLOUT P1dB ISOL (dB) (dBm) (dB) MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP 5 7.5 10 6.0 9 12 14 11 5.5 -3.0 38 Package Code Package Style S06 / TB SOT-363 UPC2745TB 2 2700 3 UPC2746TB 2 1500 3 5 7.5 10 4.0 16 19 21 13 8.5 -3.7 45 S06 / TB SOT-363 UPC2747TB 3 1800 3 3.8 5 7 3.3 9 12 14 14 10 -10.9 40 S06 / TB SOT-363 UPC2748TB 3 1500 3 4.5 6 8 2.8 16 19 21 11.5 8.5 -8.5 40 S06 / TB SOT-363 UPC2749TB 4 2900 3 4 6 8 4 13 16 18.5 10 13 -12.5 30 S06 / TB SOT-363 UPC3237TK 2 1000 3 3.5 5.0 7 1.4 13.0 15.3 17.5 10 14 -5.5 22 TK 6 pin Recessed Lead UPC8151TB 5 Note 6 3 2.8 4.2 5.8 6.0 9.5 12.5 14.5 5 10 +2.5 38 S06 / TB SOT-363 TK 6 pin Recessed Lead UPC8179TK 4 Note 7 3 2.9 4.0 5.4 5.0 13.0 15.5 17.5 7 - 0.5 42 Notes: 1. ZL = 50 for all Electrical Characteristics 2. f = 500 MHz test condition 3. f = 900 MHz test condition 4. f = 1900 MHz test condition 5. f = 1000 MHz test condition 6. 100-1900MHz with output port matching 7. 100 - 2400 MHz with output port matching Wideband Amplifiers Typical Frequency Range @ 3dB down (MHz) Part Number ELECTRICAL CHARACTERISTICS1 (TA = 25C) VCC (V) NF (dB) ICC (mA) Gain (dB) RLIN (dB) RLOUT (dB) P1dB ISOL (dBm) (dB) Package Code Package Style MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP 20 +9.2 23 S06 / TB SOT-363 UPC2708TB 3 2900 5 20 26 33 6.5 13 15 18.5 11 UPC2709TB 3 2300 5 19 25 32 5.0 21 23 26.5 10 10 +8.7 31 S06 / TB SOT-363 UPC2710TB 2 1000 5 16 22 29 3.5 30 33 36.5 6 12 +10.8 39 S06 / TB SOT-363 UPC2711TB 3 2900 5 9 12 15 5.0 11 13 16.5 25 12 -2.6 30 S06 / TB SOT-363 UPC2712TB 3 2600 5 9 12 15 4.5 18 20 23.5 12 13 -0.4 33 S06 / TB SOT-363 UPC2762TB 4 2900 3 -- 27 35 7.0 11.5 15.5 17.5 8.5 12 +7 25 S06 / TB SOT-363 UPC2763TB 4 2700 3 -- 27 35 5.5 18 21 24 11 9 +6.5 29 S06 / TB SOT-363 UPC2776TB 3 2700 5 18 25 33 6.0 21 23 26 7.5 20 +6 32 S06 / TB SOT-363 UPC3215TB 4 2900 5 -- 14 -- 2.3 18.5 20.5 -- 15 9.5 +1.5 44 S06 / TB SOT-363 UPC3223TB 3 3200 5 15 19 24 4.5 20.5 23 22.5 12 12 +6.5 33 S06 / TB SOT-363 UPC3224TB 3 3200 5 7.0 9.0 12.0 4.3 19 21.5 24 12 17 -3.5 40 S06 / TB SOT-363 UPC3225TB 3 2800 5 20.0 24.5 31.0 3.7 30 32.5 35 8.5 10.5 +9.0 41 S06 / TB SOT-363 UPC3226TB 3 3200 5 12.5 15.5 19.5 5.3 22 24 26 14 13 +7.5 34 S06 / TB SOT-363 UPC3227TB 3 3200 5 4.0 4.8 6.0 4.7 20.5 22.5 24.5 10.5 13.5 -6.5 40 S06 / TB SOT-363 UPC3232TB 3 3200 5 20 26 32 4.0 30 32.8 35.5 9.5 / 13 10 / 14.5 +11 41 S06 / TB SOT-363 UPC3236TK 3 3000 5 19 24 31 2.6 36 38 41 9 11 +10 50 TK 6-pin Recessed Lead UPC3239TB 3 3000 3.3 23 29 37 4.2 22 25 28 15 25 +9 35 S06 / TB SOT-363 UPC3240TB 3 3000 3.3 9.5 13 17 4.3 22 25 28 23 12 +1 42 S06 / TB SOT-363 UPC3241TB 3 3000 3.3 15 19.8 25 4.0 20.5 23.5 26.5 20 17 +7.5 32 S06 / TB SOT-363 UPC3242TB 3, 6 3000 3.3 -- 4.3 -- 3.5 -- 22 -- 10 10 +10.5 -- S06 / TB SOT-363 2900 3.3 14.5 18 22 3.1 26.5 29.5 32.5 12 12 +7.0 40 S06 / TB SOT-363 UPC8181TB 4 4000 3 -- 23 30 4.5 18 21 24 10.5 10 +7 32 S06 / TB SOT-363 UPC8182TB 4 2900 3 22 30 38 4.5 17.5 20.5 23.5 0 11 +9.0 32 S06 / TB SOT-363 UPC3244TB Notes: 1. ZL = 50 for all Electrical Characteristics 2. f = 500 MHz test condition 3. f = 1000 MHz test condition 5. f = 900 MHz test condition 6. Under development, please inquire 4. f = 1900 MHz test condition 17 Silicon RFICs: Low Noise, AGC & Variable Gain Amplifiers SiGe and SiGe:C Low Noise Amplifiers ELECTRICAL CHARACTERISTICS1 (TA = 25C) Typical Frequency VCC (GHz) (V) Part Number UPC8211TK1 3.0 2 UPC8230TU 3 UPC8231TK 3 UPC8233TK 3 NF (dB) ICC (mA) Gain (dB) RLOUT P1dB ISOL (dB) (dBm) (dB) RLIN (dB) MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Package Code Package Style 3 -- 3.5 4.5 1.3 15.5 18.5 21.5 -7.5 14.5 -24 32 TK 6 pin Recessed Lead 1.575 2 3 -- 6.0 - 0.85 -- 18.5 -- -16 -15 -17 -- TU 8 pin Recessed Lead 1.575 2 3 -- 3.5 - 0.80 -- 20.0 -- -13 -14 -22 -- TK 6 pin Recessed Lead 1.575 2 1.8 -- 3.5 - 0.95 -- 20.0 -- -16 -16 -23 36 TK 6 pin Recessed Lead UPC8236T6N 3 1.575 1.8 -- 6.5 - 0.8 -- 19.5 -- -11 -14 -18 39 T6N 6 pin Leadless UPC8240T6N 3 1.575 3 4.5 6.5 9.0 1.0 24.5 28 31 8.5 17 -22.5 55 T6N 6 pin Leadless 1.575 3 3 6.5 10.0 0.8 16.5 18.5 20.5 10 17 -18.0 35 T6N 6 pin Leadless UPC8244T6N 3, 4 Notes: 1. SiGe device 2. 0.8 to 3.0GHz 3. SiGe:C device 4. Under development, please inquire SiGe BiCMOS Wideband LNA with Bypass ELECTRICAL CHARACTERISTICS (TA = 25C) Part Number Mode UPD5740T6N UPD5750 T7D UPD5756T6N Typical Frequency @ 3 dB Down (MHz) LNA 770 Bypass 770 LNA 770 Bypass 770 LNA 1000 Bypass 1000 ICC NF VCC (mA) (dB) (V) 2.8 1.8 3.3 Gain (dB) TYP TYP MIN TYP MAX Input Input TYP TYP TYP RLIN (dB) RLOUT (dB) TYP P1dB (dB) IP3 (dB) 5.0 1.5 11.5 13.5 15.5 10 11 -5.0 +2 1A -- -2.0 -1.3 -- 17.0 17.0 +8 +30 3.1 1.4 -- 12.5 -- -- 8 -11 -8 1A -- -- -1.4 -- 14 14 +8 +32 25 3.2 10.5 13 15.5 10 12 +10 +9 1A -- -- -- -- -- -- -- +29 RLIN (dB) RLOUT (dB) VOUT 2 (p-p) AGC (dB) Package Code Package Style 8 pin SSOP T6N WL-BGA T7D 8 pin SSOP T6N AGC Amplifiers with Video Output ELECTRICAL CHARACTERISTICS (TA = 25C) Typical Frequency @ 3 dB Down (MHz) VCC (V) UPC3217GV 1 100 UPC3218GV 1 UPC3219GV 1 UPC3221GV 1 ICC (mA) NF (dB) MIN TYP MAX TYP 5 15 23 34 100 5 15 23 34 100 5 28 35 42 9 100 5 26 33 41 4.2 UPC3231GV 1 90 5 28 36 44 5.0 UPC3234GV 100 5 -- 28.5 38 4.0 Part Number 1 Notes: 1. fIN = 45 MHz, ZS = 50, ZL = 250 Gain (dB) Package Code Package Style MIN MAX TYP TYP TYP TYP 6.5 0 53 N/A N/A 1.0 53 S08 / GV 8 pin SSOP 3.5 10 63 N/A N/A 1.0 53 S08 / GV 8 pin SSOP 0 42 N/A N/A 1.0 42 S08 / GV 8 pin SSOP 10 60 N/A N/A 1.0 50 S08 / GV 8 pin SSOP 4 65 N/A N/A 1.0 61 S08 / GV 8 pin SSOP 4.5 63 N/A N/A 1.0 58.5 S08 / GV 8 pin SSOP 2. Output Voltage swing into RL = 250, VOUT = 1.0 Vp-p Variable Gain Amplifiers ELECTRICAL CHARACTERISTICS (TA = 25C) Part Number UPC3245TB1 Typical Frequency @ 3 dB Down (MHz) VCC (V) 250-3000 3.3 ICC (mA) Gain (dB) RLIN (dB) RLOUT (dB) MIN TYP MAX TYP MIN MAX TYP TYP -- 27.5 -- 4.0 to 9.0 6.5 25 15 15 Notes: 1. f = 2.5MHz, 50 in and out, -20dBm input power 18 NF (dB) Package Code Package Style TB SOT-363 Silicon RFIC, Up/Down Converters, Tuners & Prescalers Frequency Upconverters ELECTRICAL CHARACTERISTICS (TA = 25C) Part Number IF Input Frequency Range @3 dB Down (MHz) RF Output Frequency Range (MHz) VCC (V) ICC (mA) Conversion Gain (dB) PSAT 1 (dBm) Noise Figure (dB) TYP TYP TYP TYP -2.0 8.5 OIP3 Package Code Package Style +5.5 S06 /TB SOT-363 TYP TYP UPC8106TB 2 50-400 400-2000 3.0 9.0 10.0 UPC8172TB 3 50-400 800-2500 3.0 9.0 8.5 0.0 10.4 +6.0 S06 /TB SOT-363 UPC8187TB 4 50-400 800-2500 3.0 15 11 +2.5 12 +10.0 S06 /TB SOT-363 Notes: 1. PIN = 0 dBm 2. RF = 900 MHz, LO = 660 MHz, PLO = -5 dBm 4. RF = 1900 MHz, LO = 1780 MHz, PLO = -5 dBm 3. RF = 1900 MHz, LO = 1660 MHz, PLOIN = -5 dBm Frequency Downconverters ELECTRICAL CHARACTERISTICS (TA = 25C) RF Input Frequency Range @3 dB Down (MHz) IF Output Frequency Range @3 dB Down (MHz) TYP TYP UPC2756TB 100-2000 10-300 UPC2757TB 100-2000 20-300 UPC2758TB 100-2000 UPC8112TB 800-2000 Part Number ICC (mA) Conversion Gain (dB) PSAT 1 (dBm) Noise Figure (dB) TYP TYP TYP TYP 3.0 5.9 14 -12 3.0 5.6 13 -8 20-300 3.0 11 17 100-300 3.0 8.5 13 VCC (V) Test Condition (Note) Package Code Package Style 13 3 S06 / TB SOT-363 13 4 S06 / TB SOT-363 -4 13 4 S06 / TB SOT-363 -3 11.2 5 S06 / TB SOT-363 Note: 1. AGC Amp and Mixer Block only Out-of-Band Tuners: Downconverter with AGC & Video Amplifiers for CATV/Settop Box ELECTRICAL CHARACTERISTICS (TA = 25C) Part Number ICC (mA) Conversion Gain (dB) Gain Control Range (dB) Noise Figure (dB) TYP TYP TYP TYP 5.0 42 33 46 5.0 85 28 70 3.3 85 78 60 RF Input Frequency Range (MHz) VCC (V) UPC3220GR 30 - 250 UPC3228T5S 20 - 800 UPC3243T7A 50 - 300 IM3 (dBc) Code Package Code Package Style 7.0 55 GR / S16 16 pin SSOP 8.3 57 T5S 32 pin QFN 7.6 59 T7A 28 pin QFN Prescalers (Frequency Dividers) ELECTRICAL CHARACTERISTICS (TA = 25C) Part Number fIN (GHz) MIN MAX PIN (dBm) MIN POUT1 (dBm) MAX TYP VCC (V) Divide Ratio ICC (mA) MIN Package Code Package Style MAX UPB1507GV 0.5 3.0 -15 +6 Note 1 5.0 64/128/256 S08 / GV 8 pin SSOP UPB1508GV 0.5 3.0 -10 +10 -7 5.0 12 (TYP) 2 S08 / GV 8 pin SSOP UPB1509GV 0.05 1.0 -20 -5 Note 2 2.2 to 5.5 5.3 (TYP) 2/4/8 S08 / GV 8 pin SSOP UPB1510GV 0.5 3.0 -15 +6 -7 5.0 15 (TYP) 4 S08 / GV 8 pin SSOP Notes: 1. Output voltage swing with CL = 8 pF, VOUT = 1.2 Vp-p minimum 12.5 26.5 2. Output voltage swing with RL = 200 , VOUT = 0.1 Vp-p minimum 19 Package Dimensions Units in mm These dimensions are for the package only. For detailed dimensions including leads, please refer to the datasheet. 18 Package (1.25 x 2.0 x 0.9) Top View Side View 34 Package (2.5 x 4.5 x 1.5) 19 Package (0.8 x 1.6 x 0.75) Top View Side View 39 Package (1.5 x 2.9 x 1.1) 30 Package (1.25 x 2.0 x 0.9) Side View Top View 79A Package (4.2 x 4.4 x 0.9) Top View Top View Side View Side View K Package / 20 Pin MLP Top View Side View M13 Package (4.15 x 4.15 x 0.9) Bottom View (0.5 x 1.0 x 0.5) M02 Package Top View (2.45 x 4.5 x 1.5) Side View M14 Package (0.8 x 1.2 x 0.5) Top View Side View Bottom View 33 Package (1.5 x 2.9 x 1.4) Top View Side View GR / S16 SSOP Package (5.5 x 4.4 x 1.44) Top View Side View M04 Package (1.25 x 2.0 x 0.6) Top View Side View Top View (0.8 x 1.2 x 0.5) S02 / S03 Package M16 Package M05 Package (1.25 x 2.0 x 0.6) Side View (2.6 x 2.6 x 1.5) Top View Top View Side View S08 / GV Package Bottom View (3.0 x 3.2 x 1.5) Side View Top View 20 (2.0 x 2.0 x 0.5) Side View Side View Side View Top View TU Package Top View Bottom View T / TB / S06 Package Top View Side View T5K Package Top View (1.25 x 2.0 x 0.9) (1.0 x 1.0 x 0.37) Side View Bottom View TD Package (0.8 x 1.2 x 0.55) Top View Side View T5L/T6M Package Top View Side View (2.0 x 2.0 x 0.37) Bottom View Top View Side View TK Package Top View (1.1 x 1.5 x 0.55) Side View T5N/T6N Package Top View Side View Bottom View (1.5 x 1.5 x 0.37) Bottom View Package Dimensions Units in mm These dimensions are for the package only. For detailed dimensions including leads, please refer to the datasheet. T5R Package Top View (3.5 x 2.5 x 0.55) Side View T6Q / TSSON 10 Package Top View Side View T6Z / TSON 8 Package Top View Side View T7F / TSQFN 6 Package Top View Side View Bottom View (1.35 x 2.0 x 0.37) Bottom View (1.5 x 1.5 x 0.37) Bottom View (1.0 x 1.0 x 0.37) Bottom View T5S / QFN 32 Package Top View Side View T6R Package Top View Bottom View (1.0 x 1.0 x 0.37) Side View T7A / QFN 28 Package Top View (5.0 x 5.0 x 0.75) Side View T7D / WLBGA 6 Package Top View Bottom View (5.0 x 5.0 x 0.72) Bottom View T6C / QFN 16 Package Top View Side View T6S / QFN 16 Package Top View Side View T7C / RTSON 6 Package Top View Side View (3.0 x 3.0 x 0.75) Bottom View (3.0 x 3.0 x 0.75) Bottom View (2.0 x 1.3 x 0.37) Bottom View T6E / RQFN 20 Package Top View Side View T6X / TSON 6 Package Top View Side View T7E / QFN 26 Package Top View Side View (3.5 x 3.5 x 0.57) Bottom View (1.5 x 1.5 x 0.37) Bottom View (3.8 x 3.0 x 0.575) Bottom View (0.73 x 0.48 x 0.07) Bottom View Side View 21 Notes 22 Notes 23 U.S. Sales Representatives CEL Headquarters WA / OR / ID / MT / WY Disman Bakner Tel: (800) 347-3010 CT / MA / ME / NH / RI / VT Anchor Engineering Tel: (508) 898-2724 Colorado / Utah Albright Engineering Tel: (303) 877-9524 North Carolina Rep One Tel: (919) 424-3814 Southern CA - Irvine / LA Centaur / Procyon Tel: (949) 261-2123 South Carolina Rep One Tel: (704) 846-5744 Zapopan, Jalisco Everest Sales & Solutions Tel: +(52) 33-3123-0848 Southern CA - San Diego Centaur / Procyon Tel: (858) 278-4950 GA / East TN Rep One Tel: (770) 209-9242 Northern CA - Mountain View TAARCOM Tel: (650) 960-1550 AL / West TN / MS Rep One Tel: (256) 539-7371 Ecatepec, EDO de Mexico, DF Everest Sales & Solutions Tel: +(52) 55-5770-2179 Illinois Stan Clothier Co. 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