DMN3025LFDF-7 - DIODES INC - Product.Network

DMN3025LFDF

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BVDSS RDS(ON) max ID max

TA = +25°C

30V

20.5mΩ @ VGS = 10V 8.3A

30mΩ @ VGS = 4.5V 7.4A

Description and Applications

This new generation MOSFET is designed to minimize the on-

state

resistance (RDS(ON))

yet maintain superior switching performance,

making it ideal for high-efficiency power management applications.

• General Purpose Interfacing Switch

• Power Management Functions

Features and Benefits

• 0.6mm Profile – Ideal for Low Profile Applications

• PCB Footprint of 4mm2

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• For automotive applications requiring specific change

control (i.e.: parts qualified to AEC-Q100/101/200, PPAP

capable, and manufactured in IATF 16949 certified facilities),

please refer to the related automotive grade (Q-suffix) part.

A listing can be found at

https://www.diodes.com/products/automotive/automotive-

products/.

• This part is qualified to JEDEC standards (as references in

AEC-Q) for High Reliability.

https://www.diodes.com/quality/product-definitions/

Mechanical Data

• Case: U-DFN2020-6 (Type F)

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.0065 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN3025LFDF-7

U-DFN2020-6 (Type F)

3000/Tape & Reel

DMN3025LFDF-13

U-DFN2020-6 (Type F)

10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Internal Schematic

U-DFN2020-6

(Type F)

Pinout

Bottom View

Top View

D

S

G

e4

Pin1

DMN3025LFDF

Datasheet number: DS37737 Rev. 2 - 2

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January 2020

DMN3025LFDF

Marking Information

Site1

Date Code Key

Year

2017

2018

2019

2020

2021

2022

2023

2024

2025

Code

E

F

G

H

I

J

K

L

M

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Site 2

Date Code Key

Year

2019

2020

2021

2022

2023

2024

2025

2026

Code

9

0

1

2

3

4

5

6

Week

1-26

27-52

53

Code

A-Z

a-z

z

Internal Code

Sun

Mon

Tue

Wed

Thu

Fri

Sat

Code

T

U

V

W

X

Y

Z

S6 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex:

H = 2020)

M

= Month (ex: 9 = September)

S6

YM

O7

YWX

S6 = Product Type Marking Code

Y

WX = Date Code Marking

Y = Year (ex:

0 = 2020)

W = Week (ex: a = week

27; z represents week 52 and 53)

X = Internal code (ex: U = Monday)

S6

DMN3025LFDF

Datasheet number: DS37737 Rev. 2 - 2

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DMN3025LFDF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

T

A

= +25°C

TA = +70°C

ID

8.3

6.6 A

t < 10s TA = +25°C

TA = +70°C

ID 9.9

7.9

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

3

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

40

A

Avalanche Current (L = 0.1mH) (Note 7)

IAS

15

A

Avalanche Energy (L = 0.1mH) (Note 7)

EAS

11

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

PD

0.66

W

TA = +70°C

0.42

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

173

°C/W

t < 10s

133

Total Power Dissipation (Note 6)

TA = +25°C

PD

2.1

W

TA = +70°C

1.3

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

62

°C/W

t < 10s

43

Thermal Resistance, Junction to Case (Note 6)

Steady State

RθJC

9.4

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

30

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

1

μA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.0

—

2.0

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance RDS(ON)

—

20.5

mΩ

VGS = 10V, ID = 7A

—

30

VGS = 4.5V, ID = 7A

Diode Forward Voltage

VSD

—

0.70

1.0

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

641

—

pF VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

66

—

Reverse Transfer Capacitance

Crss

—

50

—

Gate Resistance

Rg

—

2.2

—

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

6

—

nC VDS = 15V, ID = 10A

Total Gate Charge (VGS = 10V)

Qg

—

13.2

—

Gate-Source Charge

Qgs

—

1.7

—

Gate-Drain Charge

Qgd

—

2.2

—

Turn-On Delay Time

tD(ON)

—

3.3

—

ns VDD = 15V, VGS = 10V,

RG = 6Ω, ID = 1A

Turn-On Rise Time

tR

—

4.4

—

Turn-Off Delay Time

tD(OFF)

—

22.3

—

Turn-Off Fall Time

tF

—

5.3

—

Reverse Recovery Time

tRR

—

11.4

—

ns

IF = 11A, di/dt = 100A/μs

Reverse Recovery Charge

QRR

—

8.2

—

nC

IF = 11A, di/dt = 100A/μs

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMN3025LFDF

Datasheet number: DS37737 Rev. 2 - 2

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0.0

5.0

10.0

15.0

20.0

25.0

30.0

00.5 11.5 2

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

VGS = 2.5V

VGS = 3.0V

VGS = 3.5V

VGS = 4.0V

VGS = 4.5V

VGS = 5.0V

VGS = 10V

0

5

10

15

20

25

30

00.5 11.5 22.5 33.5 4

ID, DRAIN CURRENT (A)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

V

DS

= 5.0V

TJ = -55oC

TJ = 25oC

TJ = 85oC

TJ = 125oC

TJ = 150oC

0

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.045

0.05

0 5 10 15 20 25 30

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

ID, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs Drain Current and

Gate Voltage

VGS = 4.5V

VGS = 10V

0

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.045

0.05

0 5 10 15 20 25 30

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

ID, DRAIN CURRENT (A)

Figure 4. Typical On-Resistance vs Drain Current and

Temperature

VGS = 4.5V

TJ = -55oC

TJ = 25oC

TJ = 85oC

TJ = 125oC

TJ = 150oC

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

TJ, JUNCTION TEMPERATURE (

℃

)

Figure 5. On-Resistance Variation with Temperature

VGS = 4.5V, ID = 5A

VGS = 10V, ID = 10A

0

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

TJ, JUNCTION TEMPERATURE (

℃

)

Figure 6.On-Resistance Variation with Temperature

VGS = 4.5V, ID = 5A

VGS = 10V, ID = 10A

DMN3025LFDF

Datasheet number: DS37737 Rev. 2 - 2

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DMN3025LFDF

0

0.5

1

1.5

2

2.5

3

-50 -25 025 50 75 100 125 150

VGS(TH), GATE THRESHOLD VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (℃)

Figure 7. Gate Threshold Variation vs Junction

Temperature

ID = 1mA

ID = 250µA

0

5

10

15

20

25

30

00.2 0.4 0.6 0.8 11.2

IS, SOURCE CURRENT (A)

VSD, SOURCE-DRAIN VOLTAGE (V)

Figure 8. Diode Forward Voltage vs. Current

VGS = 0V, TJ = 25oC

10

100

1000

10000

0246810 12 14 16 18 20

CT, JUNCTION CAPACITANCE (pF)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Typical Junction Capacitance

f = 1MHz

Ciss

Coss

Crss

0

2

4

6

8

10

0246810 12 14

VGS (V)

Qg (nC)

Figure 10. Gate Charge

VDS = 15V, ID = 10A

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 110 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIME (sec)

Figure 11. Transient Thermal Resistance

RθJA (t) = r(t) * RθJA

RθJA = 174℃/W

Duty Cycle, D = t1/t2

D=Single Pulse

D=0.005

D=0.01

D=0.02

D=0.05

D=0.1

D=0.3 D=0.5

D=0.7

D=0.9

DMN3025LFDF

Datasheet number: DS37737 Rev. 2 - 2

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DMN3025LFDF

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

U-DFN2020-6 (Type F)

U-DFN2020-6

(Type F)

Dim

Min

Max

Typ

A

0.57

0.63

0.60

A1

0.00

0.05

0.03

A3

-

0.15

b

0.25

0.35

0.30

D

1.95

2.05

2.00

D2

0.85

1.05

0.95

D2a

0.33

0.43

0.38

E

1.95

2.05

2.00

E2

1.05

1.25

1.15

E2a

0.65

0.75

0.70

e

0.65 BSC

e2

0.863 BSC

e3

0.70 BSC

e4

0.325 BSC

k

0.37 BSC

k1

0.15 BSC

k2

0.36 BSC

L

0.225

0.325

0.275

z

0.20 BSC

z1

0.110 BSC

z2

0.20 BSC

All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

U-DFN2020-6 (Type F)

Dimensions

Value

(in mm)

C

0.650

X

0.400

X1

0.480

X2

0.950

X3

1.700

Y

0.425

Y1

0.800

Y2

1.150

Y3

1.450

Y4

2.300

D

D2

E

e b

L

E2

AA3

Seating Plane

A1

z( 4x)

e2

E2a

D2a

z1

e3 e4

k2

k

k1

z2

Pin1

Y4

Y2

Y

XC

X3

Y1

X1

X2

Y3

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Datasheet number: DS37737 Rev. 2 - 2

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DMN3025LFDF

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

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Datasheet number: DS37737 Rev. 2 - 2

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