1650A
PHASE CONTROL THYRIST ORS Hockey Puk Version
ST1200C..K SERIES
Bulletin I25196/A
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case A-24 (K-PUK)
High profile hockey-puk
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 1650 A
@ Ths 55 °C
IT(RMS) 3080 A
@ Ths 25 °C
ITSM @ 50Hz 30500 A
@ 60H z 32000 A
I2t@
50Hz 4651 KA2s
@ 60Hz 4250 KA2s
VDRM/VRRM 1200 to 2000 V
tqtypical 200 µs
TJ- 40 to 125 °C
Parameters ST1200C..K Units
Major Ratings and Characteristics case style A-24 (K-PUK)
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ST1200C..K Series
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
12 1200 1300
14 1400 1500
16 1600 1700
18 1800 1900
20 2000 2100
ELECTRICAL SPECIFICATIONS
Voltage Ratings
IT(AV) Max. average on-state current 1650 (700) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 3080 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one-cycle 30500 t = 10ms No voltage
non-repetitive surge current 32000 A t = 8.3ms reapplied
25700 t = 10ms 100% VRRM
26900 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 4651 t = 10ms No voltage Initial TJ = TJ max.
4250 t = 8.3ms reapplied
3300 t = 10ms 100% VRRM
3000 t = 8.3ms rea pplied
I2√t Maximum I2√t for fusing 46510 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.73 V Ipk= 4000A, TJ = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILTypical latching current 1000
0.91 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.21 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.19 (I > π x IT(AV)),TJ = TJ max.
Parameter ST1200C..K Units Conditions
1.01 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25° C , anode supply 12V resistive load
ST1200C..K 100
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ST1200C..K Series
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, V R = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST1200C..K Units Conditions
Switching
1000 A/µs
tdTypical delay time 1.9
tqTypical turn-off time 200
µs
dv/dt Maximum critical rate of rise of off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated VDRM
Parameter ST1200C..K Units Conditions
100 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 16 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 3 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
TJ = - 40°C
mA TJ = 25°C
TJ = 125°C
TJ = - 40°C
VT
J
= 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 mA
Parameter ST1200C..K Units Conditions
20
5.0
Triggering
TYP. MAX.
200 -
100 200
50 -
1.4 -
1.1 3.0
0.9 -
VGD DC gate voltage not to trigger 0.25 V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
TJ = TJ max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
VGT DC gate voltage required
to trigger
IGT DC gate current required
to trigger
W
VT
J
= TJ max, tp ≤ 5ms
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ST1200C..K Series
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.042 DC operation single side cooled
junction to heatsink 0.021 DC operation double side cooled
RthC-hs Max. thermal resistance, 0.006 DC operation single side cooled
case to heatsink 0.003 DC operation double side cooled
F Mounting force, ± 10% 24500 N
(2500) (Kg)
wt Approximate weight 425 g
Parameter ST1200C..K Units Conditions
K/W
°C
Case style A-24 (K-PUK) See Outline Table
K/W
Thermal and Mechanical Specification
Single Side Double Side Single Side Double Side
180° 0.003 0.003 0.002 0.002 TJ = TJ max.
120° 0.004 0.004 0.004 0.004
90° 0.005 0.005 0.005 0.005 K/W
60° 0.007 0.007 0.007 0.007
30° 0.012 0.012 0.012 0.012
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- K = Puk Case A-24 (K-PUK)
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8- Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)
Ordering Information Table
Device Code
5123 4
ST 120 0 C 20 K 1
7
68
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ST1200C..K Series
Outline Table
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
30° 60° 90° 120° 180°
Aver age O n-state Current (A)
Conduction Angle
M axim u m A l l o wable Heatsin k Tem pe r atu re (° C )
ST120 0C..K S eries
(Singl e Side Cooled)
R (DC) = 0 .04 2 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000
DC
30° 60° 90°120°180°
Average O n-st at e C urre nt (A)
Conduction Peri od
Maximu m A l lowabl e Heatsink Temperatu re (°C )
ST1200C..K Series
(Single Si de Cooled)
R (DC) = 0.04 2 K/W
thJ-hs
Case Style A-24 (K-PUK)
All dimensions in millimeters (inches)
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
1 (0.04) MIN.
TWO PLACES 47.5 (1.87) DIA. MAX.
7 4.5 (2.9) DIA . MAX.
2 HOLES DIA. 3.5 (0.14) x
2.1 (0.1) DEEP
4.75 (0.2) NOM.
27.5 ( 1. 08) M AX.
20° ± 5°
44 (1.73)
CREPAGE DESTANCE 28.88 (1.137) MIN.
STRIKE DISTANCE 17.99 (0.708) MIN.
67 (2.6) DIA. MAX.
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ST1200C..K Series
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 6- On-state Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 5- On-state Power Loss Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
0 500 1000 1500 2000 2500 3000 3500
DC
30° 60°90°120°180°
Average O n-st at e C urre nt (A)
Conduction Peri od
Maximu m All owable Heatsink Temperature ( ° C)
ST1200C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
30
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000
30° 60° 90° 120° 180°
Av er age O n- state Cu rrent (A)
Condu cti on An gle
Maximum All owable Heatsi nk Tempe ratu re ( °C )
ST1200 C..K Series
(D ou bl e Side C ooled)
R (D C) = 0.02 1 K/W
thJ-hs
0
500
1000
1500
2000
2500
3000
3500
4000
0 400 800 1200 1600 2000
180°
120°
90°
60°
30°
RMS Limit
Condu cti on A ngle
Maximu m Average On-state Power Loss (W )
Average O n-st ate Curre n t ( A)
ST1200 C..K Series
T = 125°C
J
0
1000
2000
3000
4000
5000
0 500 1000 1500 2000 2500 3000 3500
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Per i od
M a x imum Ave rage On-state Power Loss (W)
Average On-state Cu rrent (A)
ST12 00 C. .K Series
T = 1 25°C
J
12000
14000
16000
18000
20000
22000
24000
26000
28000
110100
N u mber O f Equal A mplitude H alf Cycle Cur r ent Pul ses (N)
Peak Half Si n e Wave On -state C urr e nt (A )
ST12 00 C..K Series
Initial T = 125°C
@ 60 Hz 0.00 83 s
@ 50 Hz 0.01 00 s
J
At An y Rate d Load Co ndi t ion An d Wi t h
Rated V A pplie d Fo llow in g Su rge .
RRM
12000
14000
16000
18000
20000
22000
24000
26000
28000
30000
32000
0.01 0.1 1
Pulse Train D uration (s)
Ver su s Pul se Train Du ration. Control
Of C ondu cti on M ay Not Be Maintai ned.
Peak Hal f Sine W av e On- state Curr ent (A)
ST1200C..K Ser ies
Initial T = 125°C
No Vo ltage Re ap plie d
Rated V Re applied
RRM
J
Maximum Non Repeti ti ve Sur ge Curr ent
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ST1200C..K Series
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Gate Characteristics
100
1000
10000
0.5 1 1.5 2 2.5 3
T = 25°C
J
Ins tantaneous On-s tate Current (A)
Instantaneous On- state Vol tage (V)
T = 125°C
J
ST120 0C..K S eries
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
thJ-hs
Stea dy State V alu e
R = 0.042 K/W
(Single Side Co ol e d)
R = 0.021 K/W
(Double Si de Coo l ed)
( DC O peration )
thJ-hs
thJ-hs
ST1200C..K Series
Transient Ther mal I mpedance Z (K/W)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGDIGD
(b) (a)
Tj=25 °C
Tj=1 25 °C
Tj= -40 °C
(1) (2) (3)
Instantan e ous G ate C u rr ent ( A)
In stanta neous G at e V oltage (V )
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
a) Re commended lo ad lin e fo r
b) Re commended lo ad lin e fo r
<=30% rated di/dt : 10 V , 10ohms
Frequency Limited by P G(AV)
rated di/dt : 20V, 10ohms; tr <=1 µs
tr<= 1 µ s
Device: ST1 20 0 C..K Series
Re ct an gular gate pulse
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