BCX51-16E6327 - Infineon Technologies AG

2011-07-29

1

BCX51...-BCX53...

1

2

3

PNP Silicon AF Transistors

• For AF driver and output stages

• High collector current

• Low collector-emitter saturation voltage

• Complementary types: BCX54...BCX56 (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCX51

BCX51-16

BCX52

BCX52-16

BCX53

BCX53-10

BCX53-16

AA

AD

AE

AM

AH

AK

AL

1=B

2=C

3=E

SOT89

2011-07-29

2

BCX51...-BCX53...

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

BCX51

BCX52

BCX53

VCEO

45

60

80

V

Collector-base voltage

BCX51

BCX52

BCX53

VCBO

45

60

100

Emitter-base voltage VEBO 5

Collector current IC1 A

Peak collector current, tp ≤ 10 ms ICM 1.5

Base current IB100 mA

Peak base current IBM 200

Total power dissipation

TS ≤ 120 °C

Ptot 2 W

Junction temperature Tj150 °C

Storage temperature Tst

g

-65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1) RthJS ≤ 15 K/W

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

2011-07-29

3

BCX51...-BCX53...

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BCX51

IC = 10 mA, IB = 0 , BCX52

IC = 10 mA, IB = 0 , BCX53

V(BR)CEO

45

60

80

-

V

Collector-base breakdown voltage

IC = 100 µA, IE = 0 , BCX51

IC = 100 µA, IE = 0 , BCX52

IC = 100 µA, IE = 0 , BCX53

V(BR)CBO

45

60

100

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO 5 - -

Collector-base cutoff current

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

-

0.1

20

µA

DC current gain1)

IC = 5 mA, VCE = 2 V

IC = 150 mA, VCE = 2 V, BCX51...BCX53

IC = 150 mA, VCE = 2 V, BCX53-10

IC = 150 mA, VCE = 2 V, BCX51-16...BCX53-16

IC = 500 mA, VCE = 2 V

hFE

25

40

63

100

25

-

100

160

-

250

160

250

-

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat - - 0.5 V

Base-emitter voltage1)

IC = 500 mA, VCE = 2 V

VBE(ON) - - 1

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 20 MHz

fT- 125 - MHz

1Pulse test: t < 300µs; D < 2%

2011-07-29

4

BCX51...-BCX53...

DC current gain hFE = ƒ(IC)

VCE = 2 V

10 10 10 10

BCX 51...53 EHP00440

h

mA

0134

FE

3

10

2

0

10

5

10

1

2

10

5

100

25

-50

555

C

Ι

˚C

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 10

0 0.4 0.8

BCX 51...53 EHP00441

VCE sat

V

mA

10

4

1

10

2

10

3

10

Ι

C

5

10

0

0.2 0.6

100

25

-50

˚C

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 10

10 0 0.6

BCX 51...53 EHP00443

V

BE sat

10

mA

10

4

3

2

1

0

5

V

0.2 0.4 0.8 1.0 1.2

100

25

-50

C

Ι

˚C

Collector current IC = ƒ(VBE)

VCE = 2V

10 0 0.6

BCX 51...53 EHP00437

VBE

10

mA

10

4

3

2

1

0

5

V

0.2 0.4 0.8 1.0 1.2

100

25

-50

C

Ι

˚C

2011-07-29

5

BCX51...-BCX53...

Collector cutoff current ICBO = ƒ(TA)

VCBO = 30 V

10 0 50 100 150

BCX 51...53 EHP00442

TA

5

10

nA

10

Ι

CB0

5

10

4

3

2

1

0

-1

max

typ

˚C

Transition frequency fT = ƒ(IC)

VCE = 10 V

10 10 10 10

BCX 51...53 EHP00439

f

mA

MHz

0123

5

T

3

10

102

1

10

5

C

Ι

Total power dissipation Ptot = ƒ(TS)

0 15 30 45 60 75 90 105 120 °C 150

TS

0

0.4

0.8

1.2

1.6

W

2.4

Ptot

Permissible Pulse Load RthJS = ƒ(tp)

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

-1

10

0

10

1

10

2

10

RthJS

D = 0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

2011-07-29

6

BCX51...-BCX53...

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

0

10

1

10

2

10

3

10

-

Ptotmax/PtotDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

2011-07-29

7

BCX51...-BCX53...

Package SOT89

Reel ø180 mm = 1.000 Pieces/Reel

Reel ø330 mm = 4.000 Pieces/Reel

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

0.8

2.0

1.01.2 2.5

0.7

0.45

+0.2

1) Ejector pin markings possible

1.5

30.2

-0.1

B

0.25

1)

±0.05

45˚

0.15

2.5

±0.1

4

±0.25

M

B

0.15

±0.1

0.35

±0.2

1MAX.

10˚

1.5

±0.1

±0.2

1.6

-0.15

+0.1

2.75

±0.1

4.5

±0.1

1

x3

0.2 MAX.

1)

123

80.2

4.3 1.6

4.6

12

Pin 1

2005, June

Date code (YM)

BAW78D

Type code

Pin 1

Manufacturer

2011-07-29

8

BCX51...-BCX53...

Edition 2009-11-16

Published by

Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee

of conditions or characteristics. With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of

the device, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,

please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon

Technologies Office.

Infineon Technologies components may be used in life-support devices or systems

only with the express written approval of Infineon Technologies, if a failure of such

components can reasonably be expected to cause the failure of that life-support

device or system or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body or

to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be

endangered.