AP9971GH/J RoHS-compliant Product Advanced Power Electronics Corp. Low On-resistance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D Single Drive Requirement BVDSS 60V RDS(ON) 36m ID Surface Mount Package 25A G S Description G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9971GJ) are available for low-profile applications. G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 25 A ID@TC=100 Continuous Drain Current, VGS @ 10V 16 A 1 IDM Pulsed Drain Current 80 A PD@TC=25 Total Power Dissipation 39 W Linear Derating Factor 0.31 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 3 Value Unit 3.2 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data and specifications subject to change without notice 1 200902243 AP9971GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.05 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=18A - - 36 m VGS=4.5V, ID=12A - - 50 m VGS=0V, ID=250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=18A - 17 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V - - 250 uA Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=18A - 18 30 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 11 - nC VDS=30V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=18A - 24 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 26 - ns tf Fall Time RD=1.67 - 7 - ns Ciss Input Capacitance VGS=0V - 1700 2700 pF Coss Output Capacitance VDS=25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Min. Typ. IS=25A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=18A, VGS=0V, - 37 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 38 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9971GH/J 100 70 o T C =25 C 60 10V 7.0V 50 5.0V o T C =150 C 10V 7.0V ID , Drain Current (A) ID , Drain Current (A) 80 5.0V 60 4.5V 40 4.5V 40 30 20 V G =3.0V 20 V G =3.0V 10 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 40 2.5 I D = 18 A I D =18A V G =10V T C =25 o C Normalized RDS(ON) 2.0 RDS(ON) (m) 35 30 1.5 1.0 0.5 trr 0.31 25 0.0 3 5 7 9 11 -50 V GS , Gate-to-Source Voltage (V) 50 100 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage 2.6 16 2.2 VGS(th) (V) T j =25 o C IS(A) 12 150 1.8 8 1.4 4 1 0 Qrr Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 o T j =150 C 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9971GH/J f=1.0MHz 14 10000 I D =18A V DS =30V V DS =38V V DS =48V 10 8 C iss 1000 C (pF) VGS , Gate to Source Voltage (V) 12 6 C oss C rss 100 4 2 0 10 0 10 20 30 40 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 10us 100us 10 ID (A) 1ms 10ms 1 100ms DC T C =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM T 0.01 0.1 1 10 100 1000 trr 0.31 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 t 0.02 0.001 0.01 0.1 Qrr 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4