Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -30V
▼ Low On-resistance RDS(ON) 15mΩ
▼ Fast Switching Characteristic ID-11A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient350 ℃/W
Data and specifications subject to change without notice 1
AP4423GM-HF
Rating
-30
+25
-11
0.02
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current3-8.7
Pulsed Drain Current1-50
201106213
Halogen-Free Product
Thermal Data
Parameter
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
SSSG
DDDD
SO-8
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-10A - 12 15 mΩ
VGS=-4.5V, ID=-6A - 20 25 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-10A - 17 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=+25V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=-10A - 27 43 nC
Qgs Gate-Source Charge VDS=-24V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 20 - nC
td(on) Turn-on Delay Time2VDS=-15V - 15 - ns
trRise Time ID=-1A - 12 - ns
td(off) Turn-off Delay Time RG=3.3Ω-40-ns
tfFall Time VGS=-10V - 25 - ns
Ciss Input Capacitance VGS=0V - 1500 2400 pF
Coss Output Capacitance VDS=-25V - 530 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 440 - pF
RgGate Resistance f=1.0MHz - 2.9 4.5 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-2A, VGS=0V - - -1.2 V
trr Reverse Recovery Time2IS=-10A, VGS=0V, - 40 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 38 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4423GM-HF
A
P4423GM-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
40
80
120
160
200
0123456
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=25oC -10V
-7.0V
-5.0V
-4.5V
VG=-3.0 V
10
14
18
22
26
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=-6A
TA=25
℃
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=- 10 A
VG=-10V
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC)
-VGS(th) (V)
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25oC
Tj=150oC
0
20
40
60
80
100
120
140
0123456
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=150oC
-10V
-7.0V
-5.0V
-4.5V
VG=-3.0 V
AP4423GM-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
Q
VG
-4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
0 1020304050
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID= -10A
VDS = -24V
100
1000
10000
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TA=25oC
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
10
20
30
40
50
0123456
-VGS , Gate-to-Source Voltage (V)
-ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =-5V
