VCES
VGES
IC
ICP
-IC
-IC pulse
PC
VCES
VGES
IC
ICP
PC
VRRM
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
7MBR25UA120 IGBT Modules
IGBT MODULE (U series)
1200V / 25A / PIM
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Converter Brake Inverter
Continuous
1ms
1ms
1 device
Continuous
1ms
1 device
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
1200
±20
25
15
50
30
25
50
115
1200
±20
25
15
50
30
115
1200
1600
25
260
338
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
V
V
A
W
V
V
A
W
V
V
A
A
A2s
°C
°C
V
V
N·m
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
connected together and shorted to base plate when isolation test will be done.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
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VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=25mA
VGE=15V
Ic=25A
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=25A
VGE=±15V
RG= 68 Ω
VGE= 0 V
IF=25A
IF=25A
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=25A
VGE=15V
VCC=600V
IC=25A
VGE=±15V
RG= 68 Ω
VR=1200V
IF=25 A terminal
VGE=0V chip
VR=1600V
T=25°C
T=100°C
T=25/50°C
- - 1.0
- - 200
4.5 6.5 8.5
- 2.30 2.80
- 2.75 -
- 2.10 2.60
- 2.55 -
-2 -
- 0.41 1.20
- 0.28 0.60
- 0.03 -
- 0.37 1.00
- 0.07 0.30
- 2.95 3.55
- 2.55 -
- 2.75 3.35
- 2.35 -
- - 0.35
- - 1.0
- - 200
- 2.30 2.80
- 2.75 -
- 2.10 2.60
- 2.55 -
- 0.41 1.20
- 0.28 0.60
- 0.37 1.00
- 0.07 0.30
- - 1.0
- 1.20 1.50
- 1.10 -
- - 1.0
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
Thermistor Converter Brake Inverter
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
ICES
IGES
VCE(sat)
(terminal)
VCE(sat)
(chip)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
mA
nA
V
V
nF
µs
V
µs
mA
nA
V
µs
mA
V
mA
Ω
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound
- - 1.07
- - 1.58
- - 1.07 °C/W
- - 0.90
- 0.05 -
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
IGBT Module 7MBR25UA120
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
- 5000 -
465 495 520
3305 3375 3450
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
89
[Thermistor]
[Converter] 21(P)
23(N)
1(R) 2(S) 3(T)
[Brake] [Inverter]
22(P1)
7(B)
14(Gb)
24(N1)
20(Gu)
19(Eu)
13(Gx)
18(Gv)
17(Ev)
4(U)
12(Gy)
5(V) 6(W)
16(Gw)
11(Gz)
10(En)
15(Ew)
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IGBT Module 7MBR25UA120
Characteristics (Representative)
Vcc=600V, Ic=25A, Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
[ Inverter ] [ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
[ Inverter ] [ Inverter ]
[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
0
10
20
30
40
012345
C
o
ll
ector current :
I
c
[A]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
10
20
30
40
012345
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
10
20
30
40
012345
Collector current : Ic
[
A
]
Collector-Emitter voltage : VCE [V]
Tj=125°CTj=25°C
0
2
4
6
8
10
5 10152025
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Ic=30A
Ic=15A
Ic= 7.5A
0.1
1.0
10.0
0102030
Capacitance : Cies, Coes, Cres [ nF ]
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0306090
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE [ 5V/div ]
Gate charge : Qg [ nC ]
0
VGE
VCE
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IGBT Module 7MBR25UA120
[ Inverter ] [ Inverter ]
[ Inverter ] [ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=68Ω, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=68Ω, Tj=125°C
Reverse bias safe operating area (max.)
Vcc=600V, Ic=25A, VGE=±15V, Tj= 125°C
Switching time vs. Gate resistance (typ.)
Vcc=600V, VGE=±15V, Rg=68Ω
Switching loss vs. Gate resistance (typ.)
[ Inverter ] [ Inverter ]
Vcc=600V, Ic=25A, VGE=±15V, Tj= 25°C
Switching loss vs. Collector current (typ.)
+VGE=15V,-VGE <= 15V, RG >= 68Ω ,Tj <= 125°C
10
100
1000
10000
0102030
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
ton
toff
tr
tf
10
100
1000
10000
0 102030
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
toff
ton
tr
tf
10
100
1000
10000
10.0 100.0 1000.0
Switching time : ton, tr, toff, tf [ nsec ]
Gate resistance : Rg [ Ω ]
tr
tf
toff
ton
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
010203040
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Err(25°C)
Eoff(25°C)
0
5
10
15
10.0 100.0 1000.0
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ Ω ]
Eoff
Err
Eon
0
25
50
75
0 400 800 1200
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
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IGBT Module 7MBR25UA120
[ Inverter ] [ Inverter ]
[ Thermistor ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=68Ω
Forward current vs. Forward on voltage (typ.)
chip
chip
[ Converter ]
Forward current vs. Forward on voltage (typ.)
Transient thermal resistance (max.) Temperature characteristic (typ.)
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 10
0
12
0
14
0
16
0
18
0
Temperature [°C ]
Resistance : R [ kΩ ]
0
10
20
30
40
01234
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
Tj=125°C
Tj=25°C
10
100
1000
0102030
R
everse recovery current :
I
rr
[
A
]
Reverse recover
y
time : trr
[
nsec
]
Forward current : IF [ A ]
trr (125°C)
trr (25°C)
0.010
0.100
1.000
10.000
0.001 0.010 0.100 1.000
Thermal resistanse : Rth(j-c) [ °C/W ]
Pulse width : Pw [ sec ]
FWD[Inverter]
IGBT[Inverter, Brake]
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0
Forward current : IF [ A ]
Forward on voltage : VFM [ V ]
T
j
=125°C
Tj=25°C
Irr (125°C)
Irr (25°C)
Conv. Diode
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IGBT Module 7MBR25UA120
[ Brake ] [ Brake ]
[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
[ Brake ] [ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Vcc=600V, Ic=25A, Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C
0
10
20
30
40
012345
C
o
ll
ector current : Ic
[A]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
10
20
30
40
012345
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
10
20
30
40
012345
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5 10152025
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Ic=30A
Ic=15A
Ic=7.5A
0.1
1.0
10.0
0102030
Capacitance : Cies, Coes, Cres [ nF ]
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0306090
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE [ 5V/div ]
Gate charge : Qg [ nC ]
0
VGE
VCE
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IGBT Module 7MBR25UA120
Outline Drawings, mm
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