A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 34 V
BVCEO IC = 5.0 mA 17 V
BVEBO IE = 100 µA 2.5 V
ICBO VCB = 10 V 50 µA
hFE VCE = 5.0 V IC = 50 mA 50 200 ---
Ccb VCB = 10 V f = 1.0 MHz 1.7 2.2 pF
GP
η
ηη
ηC VCC = 15 V IC = 90 mA f = 0.3 GHz 11
65 dB
%
NPN SILICON RF POWER TRANSISTOR
MRF587
DESCRIPTION:
The ASI MRF587 is Designed f or
High Linearity Power Amplif ier
Applications up to 500 MHz.
FEATURES:
• PG = 16 dB Typical at 220 W/500 MHz
• Low Noise Figure
• Diffused Ballast Resistors
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 200 mA
VCBO 34 V
VCEO 17 V
VEBO 2.5 V
PDISS 5.0 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
PACKAGE STYLE .280 4L STUD
Lead 1 = Collector 2 & 3 = Emitter 4 = Base
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H.245 / 6.22 .255 / 6.48
DIM
1.010 / 25.65 1.055 / 26.80
I
J.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D C
B
45° A
#8-32 UNC
I
J
1
2 3
4
