VS-ST183C Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 370 A FEATURES * Metal case with ceramic insulator * All diffused design * Center amplifying gate * International standard case A-PUK (TO-200AB) * Guaranteed high dV/dt * Guaranteed high dI/dt * High surge current capability * Low thermal impedance A-PUK (TO-200AB) * High speed performance * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS Package A-PUK (TO-200AB) Circuit configuration Single SCR IT(AV) 370 A VDRM/VRRM 400 V, 800 V VTM 1.80 V ITSM at 50 Hz 4900 A ITSM at 60 Hz 5130 A IGT 200 mA TC/Ths 55 C TYPICAL APPLICATIONS * Inverters * Choppers * Induction heating * All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 C 690 A 25 C 4900 60 Hz 5130 50 Hz 120 60 Hz 110 Range TJ UNITS 370 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 800 V 10 to 20 s -40 to 125 C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST183C..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 40 Revision: 28-Aug-17 Document Number: 94368 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM ITM 180 el UNITS 100 s 180 el 50 Hz 770 660 1220 1160 5450 400 Hz 730 600 1270 1090 2760 2420 1000 Hz 600 490 1210 1040 1600 1370 2500 Hz 350 270 860 730 800 Recovery voltage Vr Voltage before turn-on Vd 50 50 VDRM VDRM VDRM 50 - 40 55 Equivalent values for RC circuit 47/0.22 40 A 680 50 Rise of on-state current dI/dt Heatsink temperature 4960 V 55 47/0.22 40 A/s 55 C F 47/0.22 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied VALUES UNITS 370 (130) A 55 (85) C 690 4900 5130 A 4120 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 4310 120 110 85 kA2s 78 Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1200 Maximum peak on-state voltage VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.80 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.40 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.45 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.67 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.58 Maximum holding current IH TJ = 25 C, IT > 30 A 600 Typical latching current IL TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s V m mA SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned on current Typical delay time dI/dt maximum TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt td TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source tq TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code minimum Maximum turn-off time TEST CONDITIONS VALUES UNITS 1000 A/s 1.1 10 s 20 Revision: 28-Aug-17 Document Number: 94368 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Vishay Semiconductors BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/s Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate current required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TJ = TJ maximum, f = 50 Hz, d% = 50 60 10 10 TJ = TJ maximum, tp 5 ms 20 5 200 TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied W A V mA 3 V 20 mA 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS VALUES TJ -40 to 125 TStg -40 to 150 RthJ-hs RthC-hs DC operation single side cooled C 0.17 DC operation double side cooled 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Mounting force, 10 % Approximate weight Case style UNITS See dimensions - link at the end of datasheet K/W 4900 (500) N (kg) 50 g A-PUK (TO-200AB) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 180 0.015 0.016 0.011 0.011 120 0.018 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 28-Aug-17 Document Number: 94368 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Vishay Semiconductors 130 ST183C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 110 100 90 O Conduction angle 80 70 60 30 50 60 180 90 ST183C..C Series (Double side cooled) RthJC (DC) = 0.08 K/W 120 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 130 120 120 110 100 90 O 80 Conduction period 70 60 50 90 40 30 30 40 DC 120 20 80 40 0 120 160 200 0 240 100 Average On-State Current (A) 200 300 400 500 600 700 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 130 1000 ST183C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 110 100 90 O 80 Conduction period 70 60 50 30 60 90 40 DC 120 180 30 180 120 90 60 30 900 Maximum Average On-State Power Loss (W) 120 Maximum Allowable Heatsink Temperature (C) 180 60 800 700 600 RMS limit 500 400 O 300 Conduction angle 200 ST183C..C Series TJ = 125 C 100 20 0 0 50 100 150 200 250 300 350 0 400 100 150 200 250 300 350 400 450 50 Average On-State Current (A) Average On-State Current (A) Fig. 5 - On-State Power Loss Characteristics Fig. 2 - Current Ratings Characteristics ST183C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 110 100 90 O 80 Conduction angle 70 60 50 30 40 60 90 180 120 1400 Maximum Average On-State Power Loss (W) Maximum Allowable Heatsink Temperature (C) 130 DC 180 120 90 60 30 1200 1000 800 RMS limit 600 O 400 Conduction period 200 ST183C..C Series TJ = 125 C 30 0 50 100 150 200 250 300 350 400 450 Average On-State Current (A) 0 0 100 200 300 400 500 600 700 Average On-State Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics Revision: 28-Aug-17 Document Number: 94368 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Vishay Semiconductors 1 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 ST183C..C Series ZthJ-hs - Transient Themal Impedance (K/W) Peak Half Sine Wave On-State Current (A) 4500 3500 3000 2500 ST183C..C Series 2000 1 10 0.1 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 0.001 0.001 100 Number of Equal Amplitude Half Cycle Current Pulses (N) 1 10 Fig. 10 - Thermal Impedance ZthJC Characteristics 5000 Qrr - Maximum Reverse Recovery Charge (C) 250 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 4500 Peak Half Sine Wave On-State Current (A) 0.1 Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 4000 3500 3000 2500 ST183C..C Series 2000 0.01 ITM = 500 A ST183C..C Series TJ = 125 C 200 300 A 200 A 150 100 A 100 50 A 50 0 0.1 0 1 Pulse Train Duration (s) 20 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 11 - Reverse Recovered Charge Characteristics 10 000 ST183C..C Series 160 ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A 140 Irr - Maximum Reverse Recovery Current (A) Instantaneous On-State Voltage (A) 0.01 1000 TJ = 25 C TJ = 125 C 100 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-State Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics 120 100 80 60 40 ST183C..C Series TJ = 125 C 20 0 0 20 40 60 80 100 dI/dt - Rate of Fall of Forward Current (A/s) Fig. 12 - Reverse Recovery Current Characteristics Revision: 28-Aug-17 Document Number: 94368 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 50 Hz 500 400 200 100 1500 1000 2500 3000 5000 ST183C..C Series Sinusoidal pulse TC = 40 C tp 10 000 10 000 Peak On-State Current (A) Peak On-State Current (A) 10 000 Vishay Semiconductors 100 1000 500 1000 50 Hz 400 200 100 1500 1000 2500 3000 ST183C..C Series Sinusoidal pulse TC = 55 C 5000 tp 10 000 100 10 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 100 10 000 10 100 Pulse Basewidth (s) 1000 10 000 Pulse Basewidth (s) Fig. 13 - Frequency Characteristics 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 400 200 100 50 Hz 500 1000 1500 1000 2500 3000 5000 tp ST183C..C Series Trapezoidal pulse TC = 40 C dI/dt = 50 A/s Peak On-State Current (A) Peak On-State Current (A) 10 000 100 1000 500 400 200 100 50 Hz 1000 1500 1000 2500 ST183C..C Series Trapezoidal pulse TC = 55 C dI/dt = 50 A/s 3000 tp 5000 100 10 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 100 10 000 10 100 Pulse Basewidth (s) 1000 10 000 Pulse Basewidth (s) Fig. 14 - Frequency Characteristics 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 50 Hz 1000 500 2500 400 200 100 1500 3000 5000 100 10 000 tp ST183C..C Series Trapezoidal pulse TC = 40 C dI/dt = 100 A/s 10 10 100 1000 10 000 Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 50 Hz 1000 1500 2500 1000 500 400 200 100 3000 100 5000 10 000 tp ST183C..C Series Trapezoidal pulse TC = 55 C dI/dt = 100 A/s 10 10 Pulse Basewidth (s) 100 1000 10 000 Pulse Basewidth (s) Fig. 15 - Frequency Characteristics Revision: 28-Aug-17 Document Number: 94368 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Vishay Semiconductors 100 000 Peak On-State Current (A) Peak On-State Current (A) 100 000 20 joules per pulse 10 000 1 0.5 0.3 1000 2 4 10 0.2 0.1 100 ST183C..C Series Sinusoidal pulse tp ST183C..C Series Rectangular pulse dI/dt = 50 A/s 10 000 20 joules per pulse 2 4 10 1 1000 0.3 0.5 0.2 0.1 100 tp 10 10 100 1000 10 10 000 10 Pulse Basewidth (s) 100 1000 10 000 Pulse Basewidth (s) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 ; tr 1 s b) Recommended load line for 30 % rated dI/dt: 10 V, 10 tr 1 s IGD 0.1 0.001 0.01 TJ = 40 C VGD tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms (b) TJ = 25 C 1 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) TJ = 125 C Instantaneous Gate Voltage (V) 100 (1) Device: ST183C..C Series 0.1 (2) (3) (4) Frequency limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Revision: 28-Aug-17 Document Number: 94368 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 18 3 C 08 C H K 1 - 1 2 3 4 5 6 7 8 9 10 11 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = fast turn-off 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case A-PUK (TO-200AB) 8 - Reapplied dV/dt code (for tq test condition) 9 - tq code 10 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) dV/dt - tq combinations available dV/dt (V/s) 10 12 tq (s) 15 18 20 20 CN CM CL CP CK 50 DN DM DL DP DK 100 EN EM EL EP EK 200 FN* FM FL* FP FK 400 HN HM HL HP HK * Standard part number. All other types available only on request. 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 11 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95074 Revision: 28-Aug-17 Document Number: 94368 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors A-PUK (TO-200AB) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. C G 13.7/14.4 (0.54/0.57) A 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. Note: A = Anode C = Cathode G = Gate 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Revision: 12-Jul-17 Document Number: 95074 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-ST183C08CFN0 VS-ST183C08CFL0 VS-ST183C04CFL0 VS-ST183C08CFN1 VS-ST183C04CFN1 VSST183C04CFN0 VS-ST183C08CFL1