BG3130... DUAL N-Channel MOSFET Tetrode * Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. (NTSC, PAL) 1 * Two AGC amplifiers in one single package 2 3 * Integrated gate protection diodes * High AGC-range, low noise figure, high gain * Improved cross modulation at gain reduction BG3130 BG3130R Drain $ # " AGC RF Input RG1 * ) G2 G1 RF Output + DC GND ! VGG ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BG3130 SOT363 1=G1* 2=G2 3=D* 4=D** 5=S 6=G1** KAs BG3130R SOT363 1=G1* 2=S 3=D* 4=D** 5=G2 6=G1** KHs * For amp. A; ** for amp. B 180 rotated tape loading orientation available Maximum Ratings Parameter Symbol Drain-source voltage VDS Continuous drain current ID Gate 1/ gate 2-source current IG1/2SM 1 Gate 1/ gate 2-source voltage V G1/G2S 6 Total power dissipation Ptot 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 1 Value 8 25 Unit V mA V mW C 2005-11-03 BG3130... Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) Rthchs 280 K/W Values Unit Electrical Characteristics Parameter Symbol min. typ. max. V(BR)DS 12 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 A +IG2SS - - 50 nA IDSS - - 10 A IDSX - 10 - mA VG1S(p) - 0.7 - V VG2S(p) - 0.6 - DC Characteristics Drain-source breakdown voltage V ID = 10 A, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, VG2S = 0 V Gate2-source leakage current VG2S = 8 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 120 k Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 A Gate2-source pinch-off voltage VDS = 5 V, I D = 20 A 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 2005-11-03 BG3130... Electrical Characteristics Parameter Symbol Values min. typ. Unit max. AC Characteristics V DS = 5V, V G2S = 4V, (ID = 14 mA) (verified by random sampling) Forward transconductance gfs - 33 - mS Gate1 input capacitance Cg1ss - 1.9 - pF Cdss - 1.1 - f = 10 MHz Output capacitance f = 10 MHz Power gain Gp dB f = 800 MHz - 24 - f = 45 MHz - 31 - Noise figure dB F f = 800 MHz - 1.3 - f = 45 MHz - 1.7 - 45 - - G p Gain control range VG2S = 4 ... 0 V, f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod - AGC = 0 dB 90 - - AGC = 10 dB - 87 - AGC = 40 dB 96 100 - 3 2005-11-03 BG3130... Total power dissipation Ptot = (TS) amp. A = amp. B Drain current ID = (IG1) VG2S = 4V amp. A = amp. B 300 30 mA 200 20 ID P tot mW 150 15 100 10 50 5 0 0 20 40 60 80 100 120 C 0 0 150 10 20 30 40 50 60 70 80 A 100 IG1 TS Output characteristics ID = (V DS) amp. A = amp. B Gate 1 current IG1 = (V G1S) VDS = 5V, VG2S = Parameter amp. A = amp. B 225 22 mA 1.3V A 4V 18 175 1.2V 14 VG1S ID 16 1.1V 3.5V 150 125 12 3V 1V 10 100 8 75 2.5V 6 50 0.8V 4 2V 25 2 0 0 2 4 6 8 10 V 0 0 14 VDS 0.4 0.8 1.2 1.6 2 2.4 V 3.2 IG1 4 2005-11-03 BG3130... Drain current ID = (V G1S) VDS = 5V, VG2S = Parameter Gate 1 forward transconductance g fs = (ID), VDS = 5V, VG2S = Parameter amp. A = amp. B amp. A = amp. B 40 32 mS 4V A 3V 4V 30 24 2.5V ID g fs 3.5V 25 20 3V 20 16 2V 15 12 2.5V 2V 10 8 1.5V 5 0 0 4 4 8 12 16 20 24 28 mA 0 0 36 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ID V 2 VG1S Drain current ID = (VGG ) amp.A=amp.B Drain current ID = (VGG) VDS = 5V, VG2S = 4V, RG1 = 120k VG2S = 4V, RG1 = Parameter in k (connected to VGG, VGG =gate1 supply voltage) amp. A = amp. B 13 mA 22 70 mA 80 11 18 10 ID ID 100 16 9 8 7 12 6 10 5 120 14 8 4 6 3 4 2 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 VGG 1 2 3 4 5 V 7 VGG=VDS 5 2005-11-03 BG3130... Crossmodulation Vunw = (AGC) VDS = 5 V, Rg1 = 68 k 120 V unw dBV 100 90 80 0 10 20 30 dB 50 AGC Crossmodulation test circuit VAGC VDS 4n7 R1 10 kOhm 2.2 H 4n7 4n7 RL 50 Ohm 4n7 RGEN 50 Ohm RG1 50 Ohm VGG 6 2005-11-03 Package SOT363 BG3130... Package Outline 2 0.2 0.9 0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 0.1 4 0.1 MIN. 5 2.1 0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout Manufacturer Date code (Year/Month) Laser marking 2005, June Pin 1 marking Type code BCR108S Example Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 7 2005-11-03 BG3130... Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2005-11-03