Preliminary Data Sheet October 2004 AGR09060G 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060G is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of delivering a minimum output power of 60 W, it is ideally suited for today's RF power amplifier applications. AGR09060GU (unflanged) AGR09060GF (flanged) Figure 1. Available Packages Features Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, traffic codes 8--13: -- Output power (POUT): 14 W. -- Power gain: 18.5 dB. -- Efficiency: 27%. -- Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset: -45 dBc) (1.98 MHz offset: -60 dBc). -- Input return loss: 10 dB. High-reliability gold-metalization process. High gain, efficiency, and linearity. Integrated ESD protection. Si LDMOS. Industry-standard packages. 60 W minimum output power. Parameter Thermal Resistance, Junction to Case: AGR09060GU AGR09060GF Sym Value Unit RJC RJC 1.0 1.3 C/W C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current--Continuous Total Dissipation at TC = 25 C: AGR09060GU AGR09060GF Derate Above 25 C: AGR09060GU AGR09060GF Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS -0.5, +15 ID 6.0 Unit Vdc Vdc Adc PD PD 175 135 W W -- -- TJ 1.0 0.77 200 W/C W/C C TSTG -65, +150 C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR09060G HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR09060G 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet October 2004 Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS -- -- 1.3 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) IDSS -- -- 4 Adc GFS -- 3 -- S VGS(TH) -- -- 4.8 Vdc Gate Quiescent Voltage (VDS = 28 V, IDQ = 550 mA) VGS(Q) -- 3.5 -- Vdc Drain-source On-voltage (VGS = 10 V, ID = 1.0 A) VDS(ON) -- 0.17 -- Vdc Symbol Min Typ Max Unit Input Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) CISS -- 126 -- pF Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) COSS -- 36 -- pF Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) CRSS -- 1.9 -- pF Off Characteristics Drain-source Breakdown Voltage (VGS = 0, ID = 100 A) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1.0 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 A) Table 5. RF Characteristics Parameter Dynamic Characteristics Functional Tests (in Agere Systems Supplied Test Fixture) (Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz) Linear Power Gain (VDS = 28 V, POUT = 6 W, IDQ = 550 mA) GL 17 18.5 -- dB Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 550 mA) -- 57 -- % Third-order Intermodulation Distortion (100 kHz spacing, VDS = 28 V, POUT = 60 WPEP, IDQ = 550 mA) IMD -- -32 -- dBc Output Power (VDS = 28 V, 1 dB compression, IDQ = 550 mA) P1dB 60 75 -- W VSWRI -- 2:1 -- -- Input VSWR Ruggedness (VDS = 28 V, POUT = 60 W, IDQ = 550 mA, f = 880 MHz, VSWR = 10:1, all angles) 2 -- No degradation in output power. Agere Systems Inc. Preliminary Data Sheet October 2004 AGR09060G 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09060G VDD + FB1 VGG + R3 C26 + C14 Z13 R2 C13 C12 C11 C10 C9 C8 Z14 R1 Z1 RF INPUT C27 Z2 Z6 Z7 Z8 Z9 Z10 Z22 Z11 Z12 C19 C20 Z16 Z15 DUT C2 C3 C6 C4 C23 C24 C25 Z18 Z19 Z20 C18 Z21 RF OUTPUT 3 C7 Z17 C22 1 2 Z3 Z4 C21 C17 C15 C16 C5 C1 Z5 PINS: 1. DRAIN; 2. GATE; 3. SOURCE A. Schematic Parts List: Microstrip line: Z1 0.675 in. x 0.066 in.; Z2 0.035 in. x 0.066 in.; Z3 0.297 in. x 0.050 in.; Z4 0.075 in. x 0.066 in.; Z5 0.818 in. x 0.066 in.; Z6 0.482 in. x 0.150 in.; Z7 0.050 in. x 0.150 in.; Z8 0.300 in. x 0.150 in.; Z9 0.050 in. x 0.440 in.; Z10 0.050 in. x 0.440 in.; Z11 0.078 in. x 0.440 in.; Z12 0.050 in. x 0.440 in.; Z13 1.024 in. x 0.050 in.; Z14 0.166 in. x 0.300 in.; Z15 0.050 in. x 0.300 in.; Z16 0.114 in. x 0.300 in.; Z17 0.050 in. x 0.300 in.; Z18 0.650 in. x 0.100 in.; Z19 0.050 in. x 0.100 in.; Z20 0.583 in. x 0.066 in.; Z21 0.881 in. x 0.066 in.; Z22 2.048 in. x 0.050 in. (R) Murata 0805 chip capacitor: C12, C23: 0.01 F, GRM40X7R103K100AL. 0603 chip capacitor: C10, C21: 220 pF. (R) Sprague tantalum chip capacitor: C14, C25, C26: 22 F, 35 V. (R) Kreger ferrite bead: FB1: 2743D19447. (R) Kemet 1206 chip capacitor: C13, C24: 0.10 F, C1206C104KRAC7800. (R) Vitramon chip capacitor: C11, C22: 2200 pF, VJ1206Y222KXA. (R) Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. (R) ATC chip capacitor: C1, C8, C18, C19: 47 pF, 100B470JW; C2: 3.9 pF, 100B3R9BW; C3, C6, C9, C20: 10 pF, 100B100JW; C4, C5, C15, C16: 12 pF, 100B120JW; C7: 5.6 pF, 100B5R6BW; C17: 4.7 pF, 100B4R7BW; C27: 8.2 pF, 100A8R2BW. 1206 size fixed film chip resistor, 0.25 W: R1: 50 , RM73B2B500J; R2: 47 k, RM73B2B473J; R3: 1 k, RM73B2B103J. B. Component Layout Figure 2. AGR09060G Test Circuit Agere Systems Inc. 3 AGR09060G 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet October 2004 U CT IN D 10 0.1 0.4 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.2 1.0 0.9 0.7 0.6 0.8 50 ZL 0.5 0.4 0.3 0.2 20 0.2 0.1 f3 1.4 90 0.6 f1 50 L OA D < RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 0.2 0.4 0.1 ) / Yo (-jB CE 0 1. IV CT 0.8 DU IN 0 2. 0.11 -100 1.8 5 -90 0.13 -110 0.1 0.0 0.0 -70 40 -1 43 8 2 0.4 9 0.4 0. 07 -1 30 1 0.4 0.39 0.38 F 0.37 0.12 0.6 1.6 0.36 1.0 1.2 0.35 0.9 0.14 -80 -4 0 0.15 0.8 1.4 0.7 -70 0 -5 6 -4 4 (-j 0. 0 -12 5 0.1 0.3 35 -5 3 -60 -60 7 0.1 0.3 CA P AC I TI V 0 -65 .5 0.2 -30 32 CE CO M T 06 Z X/ 0. ER EA CT AN EN 0. 18 0. 0 -5 -25 PO N 0. 0.4 5 0.0 ,O o) R -75 0.6 0 31 0. 19 0. 44 -20 3. -85 AN PT CE US ES 0 4.0 6 1. -15 4 0.0 0 -15 -80 5.0 0.3 5 0.4 0.2 9 0.2 -4 0 4 0. 0.2 8 ZS f1 1 -30 0.3 8 0. 0.2 0.4 f3 0.2 2 0.2 -10 0.48 10 0.6 -20 D OW A R 7 HST 0.4 N GT -170 EL E AV W < -90 -160 20 0.49 0. 8 0.25 0.2 6 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG Z0 = 4 0.0 > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 180 170 Typical Performance Characteristics MHz (f) 865 (f1) 880 (f2) 895 (f3) ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 0.393 - j1.07 1.97 + j0.004 0.431 - j1.02 1.98 + j0.120 0.471 - j0.985 1.99 + j0.223 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances 4 Agere Systems Inc. Preliminary Data Sheet October 2004 AGR09060G 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 0 VDD = 28 VDC, IDQ = 550 mA, FREQUENCY = 880 MHz, Tc = 30 C, IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8 THROUGH 13. OFFSET 1 = 750 kHz, 30 kHz BANDWIDTH. OFFSET 2 = 1.98 MHz, 30 kHz BANDWIDTH. -10 ACPR (dBc)Z -20 -30 -40 ACP+ ACP- -50 ACP1+ ACP1- -60 -70 -80 -90 0 5 10 15 20 POUT (W)Z Figure 4. ACPR vs. POUT -2 20 POWER GAIN 19 POUT = 14 W POWER GAIN (dB)Z 17 15 14 POUT = 79 W VDD = 28 VDC, IDQ = 550 mA, Tc = 30 C, WAVEFORM = CW -10 -12 -14 -16 13 12 -8 -18 RETURN LOSS 11 -20 10 -22 9 -24 8 860 865 870 875 880 885 890 895 INPUT RETURN LOSS (dB)Z -6 18 16 -4 -26 900 FREQUENCY (MHz)Z Figure 5. Power Gain and Input Return Loss vs. Frequency Agere Systems Inc. 5 AGR09060G 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet October 2004 Typical Performance Characteristics (continued) 22 20 POWER GAIN (dB)Z 18 865 MHz 880 MHz 895 MHz 16 14 12 VDD = 28 VDC, IDQ = 550 mA, Tc = 30 C, WAVEFORM = CW 10 8 6 4 2 0 0 20 40 60 80 100 POUT (W)Z Figure 6. Power Gain vs. Power Out Power Out and Efficiency vs Pin 100 110 90 100 POUT POUT (W)Z 70 60 90 VDD = 28 VDC, IDQ = 550 mA, Tc = 30 C, WAVEFORM = CW 80 865 MHz 880 MHz 895 MHz 70 EFFICIENCY 50 60 895 MHz 880 MHz 865 MHz 40 30 50 40 20 30 10 20 0 DRAIN EFFICIENCY (%)Z 80 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 PIN (W)Z Figure 7. Power Out and Drain Efficiency vs. Input Power 6 Agere Systems Inc. Preliminary Data Sheet October 2004 AGR09060G 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. AGR09060GU 1 1 AGERE AGR09060GU YYWWLL XXXXX ZZZZZZZ 3 3 2 2 PINS: 1. DRAIN, 2. GATE, 3. SOURCE AGR09060GF 1 AGERE 3 AGR09060GF YYWWLL XXXXX ZZZZZZZ 1 3 2 2 PINS: 1. DRAIN, 2. GATE, 3. SOURCE Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. The last two letters of the part number denote wafer technology and package type. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. Agere Systems Inc. 7 AGR09060G 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet October 2004 RF Power Product Information For product and application information, please visit our website: http://www.agere.com/rfpower. ATC is a registered trademark of American Technical Ceramics Corp. Kemet is a registered trademark of KRC Trade Corporation. Sprague is a registered trademark of Sprague Electric Company Corporation. Murata is a registered trademark of Murata Electronics North America, Inc. Kreger is a registered trademark of Kreger Components, Inc. Vitramon is a registered trademark of Vitramon Incorporated. Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd. For additional information, contact your Agere Systems Account Manager or the following: INTERNET: http://www.agere.com E-MAIL: docmaster@agere.com N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138 1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106) ASIA: CHINA: (86) 21-54614688 (Shanghai), (86) 755-25881122 (Shenzhen) JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6741-9855, TAIWAN: (886) 2-2725-5858 (Taipei) EUROPE: Tel. (44) 1344 296 400 Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc. Copyright (c) 2004 Agere Systems Inc. All Rights Reserved October 2004 DS02-022RFPP