Semiconductor Group 1 Dec-19-1996
BC 817-16W
NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC807W, BC808W (PNP)
Type Marking Ordering Code Pin Configuration Package
BC 817-16W 6As Q62702-C2320 1 = B 2 = E 3 = C SOT-323
BC 817-25W 6Bs Q62702-C2278 1 = B 2 = E 3 = C SOT-323
BC 817-40W 6Cs Q62702-C2321 1 = B 2 = E 3 = C SOT-323
BC 818-16W 6Es Q62702-C2322 1 = B 2 = E 3 = C SOT-323
BC 818-25W 6Fs Q62702-C2323 1 = B 2 = E 3 = C SOT-323
BC 818-40W 6Gs Q62702-C2324 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
BC 817 W
BC 818 W
V
CEO
25
45 V
Collector-base voltage
BC 817 W
BC 818 W
V
CBO
30
50
Emitter-base voltage
V
EBO 5
DC collector current
I
C 500 mA
Peak collector current
I
CM 1 A
Base current
I
B 100 mA
Total power dissipation,
T
S = 130°C
P
tot 250 mW
Junction temperature
T
j 150 °C
Storage temperature
T
stg - 65 ... + 150
Thermal Resistance
Junction ambient 1)
R
thJA ≤ 215 K/W
Junction - soldering point
R
thJS ≤ 80
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 2 Dec-19-1996
BC 817-16W
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C = 10 mA,
I
B = 0 , BC 817 W
I
C = 10 mA,
I
B = 0 , BC 818 W
V
(BR)CEO
25
45 -
--
-V
Collector-base breakdown voltage
I
C = 10 µA,
I
B = 0 , BC 817 W
I
C = 10 µA,
I
B = 0 , BC 818 W
V
(BR)CBO
30
50 -
--
-
Base-emitter breakdown voltage
I
E = 10 µA,
I
C = 0
V
(BR)EBO 5 - -
Collector-base cutoff current
V
CB = 25 V,
T
A = 25 °C
V
CB = 25 V,
T
A = 150 °C
I
CBO
-
--
- 50
100 nA
µA
Emitter cutoff current
V
EB = 4 V,
I
C = 0
I
EBO - - 100 nA
DC current gain
I
C = 100 mA,
V
CE = 1 V, BC ... 16 W
I
C = 100 mA,
V
CE = 1 V, BC ... 25 W
I
C = 100 mA,
V
CE = 1 V, BC ... 40 W
I
C = 300 mA,
V
CE = 1 V, BC ... 16 W
I
C = 300 mA,
V
CE = 1 V, BC ... 25 W
I
C = 300 mA,
V
CE = 1 V, BC ... 40 W
h
FE
170
100
60
250
160
100
-
-
-
350
250
160
-
-
-
630
400
250 -
Collector-emitter saturation voltage 1)
I
C = 500 mA,
I
B = 50 mA
V
CEsat - - 0.7 V
Base-emitter saturation voltage 1)
I
C = 500 mA,
I
B = 50 mA
V
BEsat - - 1.2
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group 3 Dec-19-1996
BC 817-16W
NPN Silicon AF Transistor
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
I
C = 50 mA,
V
CE = 5 V,
f
= 100 MHz
f
T
- 170 - MHz
Collector-base capacitance
V
CB = 10 V,
f
= 1 MHz
C
cb - 6 - pF
Emitter-base capacitance
V
EB = 0.5 V,
f
= 1 MHz
C
eb - 60 -
Semiconductor Group 4 Dec-19-1996
BC 817-16W
Total power dissipation
P
tot =
f
(
T
A*;
T
S)
* Package mounted on epoxy
020 40 60 80 100 120 °C 150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax /
P
totDC =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collectot cutoff current
I
CBO =
f
(
T
A)
V
CB = 60V
Semiconductor Group 5 Dec-19-1996
BC 817-16W
DC current gain
h
FE =
f
(
I
C)
V
CE = 1V Transition frequency
f
T =
f
(
I
C)
VCE = 5V
Base-emitter saturation voltage
I
C = f (
V
BEsat),
h
FE = 10 Collector-emitter saturation voltage
I
C = f (
V
CEsat),
h
FE = 10
