Vishay Semiconductors
TLHB420.
Document Number 83014
Rev. 1.5, 17-Sep-07
www.vishay.com
1
High Efficiency Blue LED, ∅ 3 mm Tinted Non-Diffused Package
FEATURES
• GaN on SiC technology
• Standard ∅ 3 mm (T-1) package
• Small mechanical tolerances
• Medium viewing angle
• Very high intensity
• Luminous intensity categorized
• ESD class 1
• Lead (Pb)-free device
19222
DESCRIPTION
This device has been redesigned in 1998 replacing
SiC by GaN technology to meet the increasing
demand for high efficiency blue LEDs.
It is housed in a 3 mm tinted non-diffused plastic
package.
All packing units are categorized in luminous intensity
groups. That allows users to assemble LEDs with
uniform appearance.
APPLICATIONS
• Status lights
• OFF/ON indicator
• Background illumination
• Readout lights
• Maintenance lights
• Legend light
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 3 mm
• Product series: standard
• Angle of half intensity: ± 22°
Note:
1) Tamb = 25 °C, unless otherwise specified
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHNOLOGY
TLHB4200 Blue, IV > 25 mcd GaN on SiC
TLHB4201 Blue, IV = (40 to 132) mcd GaN on SiC
ABSOLUTE MAXIMUM RATINGS1) TLHB420.
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
DC Forward current Tamb ≤ 60 °C IF20 mA
Surge forward current tp ≤ 10 μsI
FSM 0.1 A
Power dissipation Tamb ≤ 60 °C PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/
ambient
RthJA 400 K/W
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Document Number 83014
Rev. 1.5, 17-Sep-07
Vishay Semiconductors
TLHB420.
Note:
1) Tamb = 25 °C, unless otherwise specified
2) in one packing unit IVmin/IVmax ≤ 0.5
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS1) BLUE
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 20 mA TLHB4200 IV25 50 mcd
TLHB4201 IV40 132 mcd
Dominant wavelength IF = 10 mA λd466 nm
Peak wavelength IF = 10 mA λp428 nm
Angle of half intensity IF = 10 mA ϕ± 22 deg
Forward voltage IF = 20 mA VF3.9 4.5 V
Reverse voltage IR = 10 μAV
R5V
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature for InGaN
100806040
0
25
50
75
100
125
P- Power Dissipation (mW)
V
T
amb - Ambient Temperature (°C)
95 10904
200
0
10
20
30
40
60
I- Forward Current (mA)
F
15884
50
Tamb- Ambient Temperature (°C)
100806040200
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 4. Forward Current vs. Forward Voltage
0.4 0.2 0 0.2 0.4 0.6
95 10041
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
I - Relative Luminous Intensity
Vrel
1
10
100
VF - Forward Voltage (V)
15846
IF - Forward Current (mA)
02468
13 57
Document Number 83014
Rev. 1.5, 17-Sep-07
www.vishay.com
3
Vishay Semiconductors
TLHB420.
PACKAGE DIMENSIONS in millimeters
Figure 5. Rel. Luminous Flux vs. Ambient Temperature
Figure 6. Relative Luminous Flux vs. Forward Current
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
15847
IV rel - Relative Luminous Intensity
IF = 10 mA
Tamb - Ambient Temperature (°C)
- 10 10 20 30 40 50 60 70 80901000
0.01
0.1
1
10
100
IF - Forward Current (mA)
15848
IV rel - Relative Luminous Intensity
110
Figure 7. Relative Intensity vs. Wavelength
0
20
40
60
80
100
120
350 400 450 500 550 600
λ-Wavelenght (nm)
15849
I
V rel
- Relative Luminous Intensity (%)
I
F
= 10 mA
95 10913
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Document Number 83014
Rev. 1.5, 17-Sep-07
Vishay Semiconductors
TLHB420.
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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