DATA SH EET
Product specification 1995 Sep 12
DISCRETE SEMICONDUCTORS
BFG198
NPN 8 GHz wideband transistor
1995 Sep 12 2
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
DESCRIPTION
NPN planar epitaxial transistor in a
plastic SOT223 envelope , in tended
for wideband amplifie r applications.
The device features a high gain and
excellent output voltage capabilities.
PINNING
PIN DESCRIPTION
1emitter
2base
3emitter
4 collector
Fig.1 SOT223.
fpage 4
123
MSB002 - 1
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maxi mum Sys tem (IEC 134).
Note
1. Ts is the temperature at the sold ering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
ICDC collector current 100 mA
Ptot total power dissipation up to Ts=135C (note 1) 1W
hFE DC current gain IC=50mA; V
CE =5V; T
j=25C4090
fTtransition frequenc y IC=50mA; V
CE =8V; f=1GHz;
Tamb =25C8GHz
GUM maximum unilateral power
gain IC=50mA; V
CE = 8 V; f = 500 MHz;
Tamb =25C18 dB
IC=50mA; V
CE = 8 V; f = 800 MHz;
Tamb =25C15 dB
Vooutput voltage dim =60 dB; IC=70mA; V
CE =8V;
RL=75; Tamb =25C;
f(p+qr) =793.25MHz
700 mV
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
VEBO emitter-base voltage open collector 2.5 V
ICDC collector current 100 mA
Ptot total power dissipation up to Ts=135C (note 1) 1W
Tstg storage temperature 65 +150 C
Tjjunction temperature 175 C
1995 Sep 12 3
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
THERMAL CHARACTE RISTI CS
Note
1. Ts is the temperature at the sold ering point of the collector tab.
CHARACTERISTICS
Tj=25C unless otherwise specified.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. dim =60 dB (DIN 45004B); IC=70mA; V
CE =8V; R
L=75; Tamb =25C;
Vp=V
o at dim =60 dB;
Vq=V
o6dB; f
p=445.25MHz;
Vr=V
o6dB; f
q= 453.25 MHz; fr=455.25MHz
measured at f(p+qr) = 443.25 MHz.
3. dim =60 dB (DIN 45004B); IC=70mA; V
CE =8V; R
L=75; Tamb =25C;
Vp=V
o at dim =60 dB; fp=795.25MHz;
Vq=V
o6dB; f
q=803.25MHz;
Vr=V
o6dB; f
r=805.25MHz;
measured at f(p+qr) = 793.25 MHz.
4. IC=50mA; V
CE =8V; V
o=50dBmV;
f(p+q) =810MHz; f
p=250MHz; f
q=560MHz.
SYMBOL PARAMETER CONDITIONS VALU
EUNIT
Rth j-s thermal resistance fr om junction to soldering point up to Ts=135C (note 1) 40 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cu t-off current IE=0; V
CB =5V 100 nA
hFE DC current gain IC=50mA; V
CE =5V 40 90
Cccollector capacitance IE=i
e=0; V
CB =8V; f=1MHz 1.5 pF
Ceemitter capacitance IC=i
c=0; V
EB = 0.5 V; f = 1 MHz 4pF
Cre feedback capacitance IC=0; V
CE =8V; f=1MHz 0.8 pF
fTtransition frequency IC=50mA; V
CE =8V; f=1GHz;
Tamb =25C8GHz
GUM maximum unilateral power
gain; note 1 IC=50mA; V
CE = 8 V; f = 500 MHz;
Tamb =25C18 dB
IC=50mA; V
CE = 8 V; f = 800 MHz;
Tamb =25C15 dB
Vooutput volt a ge note 2 750 mV
note 3 700 mV
d2second order
intermodulation distortion note 4 55 dB
GUM 10 s21 2
1s
11 2
–1s
22 2
–
-------------------------------------------------------- dB.log=
1995 Sep 12 4
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
Fig.2 Intermodulation distortion and second o rder intermodulation distortion test circuit.
handbook, full pagewidth
MBB754
DUT
;;
VBB C3 R1
L1C1
C2
L2
input
75
R2
L3
R3 R4
L5
C4
;;
C5
C6
L4
output
75
VCC = 8 V
L6
Ω
Ω
List of components (see test circuit)
Note
1. Components C5, L1, L3, L4, an d R2 are mounted on the un derside of the PCB.
The circuit is constructed on a double copper-clad printed circ uit board with PTFE dielectric (r=2.2);
thickness 116 inch; thickne ss of copper sheet 2 x 35 m; see Fig.2.
DESIGNATION DESCRIPTION VALUE UNIT DIMENSIONS CATALOGUE NO.
C2 multilayer ceramic capacitor 1.2 pF 2222 851 12128
C1, C4, C6, C7 multilayer ce ramic capacitor 10 nF 2222 590 08627
C3 multilayer ce ramic capacitor 10 nF 2222 851 12128
C5 (note 1) multilayer ceramic capacitor 10 nF 2222 629 08103
C8 multilayer ceramic capacitor 1.5 pF 2222 851 12158
L1 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm;
winding pitch 1 mm
L2 microstripline 75 length 22 mm;
width 2.5 mm
L3 (note 1) 0.4 mm copper wire 24 nH length 30 mm
L4 (note 1) 0.4 mm copper wire 3.6 nH length 4 mm
L5 microstripline 75 length 19 mm;
width 2.5 mm
L6 Ferroxcube choke 5 H 3122 108 20153
R1 metal film resistor 10 2322 180 73103
R2 (note 1) metal film resistor 220 2322 180 73221
R3, R4 metal film resis tor 30 2322 180 73309
1995 Sep 12 5
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
Fig.3 Intermodula tio n distortion and second order inte rmodulation distortion printed-circuit board.
handbook, full pagewidth
MEA968
75
input 75
output
C7
C8
C6
L6
VCC
VBB
R1
C4
C2
C1
L2 L5
R3
R2 R4 C5
L3
L4
L1
C3
ΩΩ
handbook, full pagewidth
MEA966
60 mm
80 mm
handbook, full pagewidth
MEA967
80 mm
60 mm
mounting
screws
M 2.5 (8x)
1995 Sep 12 6
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
Fig.4 Power derating curve.
handbook, halfpage
0 50 100 200
0.8
0.6
0.2
0
0.4
MBB752
150T ( C)
o
s
Ptot
(W) 1.0
1.2
Fig.5 DC current gain as a fu nc tion of collector
current.
VCE =5V; T
j=25C.
handbook, halfpage
0
160
120
80
40 40 120
MBB267
80 I (mA)
C
hFE
Fig.6 Feedback capacitance as a function of
collector-base voltage.
IE= 0; f = 1 MHz; Tj=25C.
handbook, halfpage
0
1.2
0.8
0.4
0420
MBB751
81216
V (V)
CB
Cre
(pF)
Fig.7 Transition frequency as a function of
collector current.
VCE =8V; f=1GHz; T
amb =25C.
handbook, halfpage
04080
8
6
2
0
4
MBB499
120
I (mA)
C
(GHz)
T
f10
1995 Sep 12 7
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
Fig.8 Maximum gain as a function of frequ ency.
IC=50mA; V
CE =8V; T
amb =25C;
handbook, halfpage
40
0
20
30
10
MBB753
102103104
10
f (MHz)
GUM
(dB)
Fig.9 Intermodulation distortion as a function of
collector current.
VCE =8V; V
o=750mV; T
amb =25C;
f(p+qr) =443.25MHz.
handbook, halfpage
20 120
45
70
65
MBB498
60
55
50
40 60 80 100
dim
(dB)
I (mA)
C
Fig.10 Intermodulation distortion as a function of
collector current.
VCE =8V; V
o=700mV; T
amb =25C;
f(p+q) = 793.25 MHz.
handbook, halfpage
20 120
45
70
65
MBB266
60
55
50
40 60 80 100
dim
(dB)
I (mA)
C
Fig.11 Second order intermodulation distortion as
a function of collector current.
VCE =8V; V
o= 50 dBmV; Tamb =25C
f(p+q) = 450 MHz.
handbook, halfpage
20 120
35
60
55
MBB497
50
45
40
40 60 80 100
d2
(dB)
I (mA)
C
1995 Sep 12 8
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
Fig.12 Second order intermodulation distortion as
a function of collector current.
VCE =8V; V
o= 50 dBmV; Tamb =25C
f(p+q) = 810 MHz.
handbook, halfpage
20 120
35
60
55
MBB268
50
45
40
40 60 80 100
d2
(dB)
I (mA)
C
1995 Sep 12 9
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
Fig.13 Common emitter input reflection coefficient (S11).
IC=50mA; V
CE =8V; T
amb =25C; Zo=50.
handbook, full pagewidth
MBB494
10
25
50
100
250
10
25
50
100
250
0
+ j
– j
2 GHz
40 MHz
∞
10 25 50 100 250
Fig.14 Common emitter forward transmission coefficient (S21).
IC=50mA; V
CE =8V; T
amb =25C.
handbook, full pagewidth
180
MBB496
o
ϕ
ϕ
0o
30o
60o
90o
120o
150o
150o
120o
90o60o
30o
80 40100 60 20
2 GHz
40 MHz
1995 Sep 12 10
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
Fig.15 Common emitter reverse trans m ission coefficient (S12).
IC=50mA; V
CE =8V; T
amb =25C.
handbook, full pagewidth
180
MBB495
o
ϕ
ϕ
0o
30o
60o
90o
120o
150o
150o
120o
90o60o
30o
2 GHz
0.16 0.080.2 0.12 0.04 40 MHz
Fig.16 Common emitter output refle ction coefficient (S22).
IC=50mA; V
CE =8V; T
amb =25C; Zo=50.
1995 Sep 12 11
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
PACKAGE OUTLINE
UNIT A1bpcDEe1HELpQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 04-11-10
06-03-16
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface-mounted package with increased heatsink; 4 leads SOT223
1995 Sep 12 12
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completin g a d esign.
2. The product status of device(s) described in this documen t may have changed since this document wa s published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DEFINITIONS
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provided in a Product data she et shall define the
specification of the product as agreed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
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1995 Sep 12 13
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s third
party customer(s). Customer is responsible for doing all
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customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ra tings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommende d
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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Printed in The Netherlands R77/03/pp14 Date of release: 1995 Sep 12