Feb. 2009
1
MITSUBISHI IGBT MODULES
CM200DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
APPLICATION
UPS, NC machine, AC-Drive control, Servo, Welders
CM200DU-24H
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
8.85 (8.25)
(18)
CIRCUIT DIAGRAM
C2E1
E2 C1
G2E2
E1
G1
4
0.5
0.5
25.7
0.5
0.5
E1 E2 G2
G1
CM
C1
E2
C2E1
LABEL
4-φ6. 5 MOUNTING HOLES
3-M6 NUTS
108
29 +1.0
–0.5
62
18 7 18 7 18
8.5
22
93 ±0.25
48 ±0.25
2.8
4
7.5
6156
(7)
17.5
14 14 14
25 2.521.525
T
C
measured point
(7.5)(7.5)
●IC ................................................................... 200A
●VCES ....................................................... 1200V
●Insulated Type
●2-elements in a pack
●UL Recognized
Yellow Card No. E80276
File No. E80271
Not Recommend
for New Design
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM200DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
V
V
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 600V, IC = 200A, VGE = 15V
VCC = 600V, IC = 200A
VGE = ±15V
RG = 1.6Ω
Resistive load
IE = 200A, VGE = 0V
IE = 200A,
die / dt = –400A / µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to heat sink, conductive grease applied
(Per 1/2 module) (Note 6)
IC = 20mA, VCE = 10V
IC = 200A, VGE = 15V (Note 4)
VCE = 10V
VGE = 0V
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance (Note 5)
Contact thermal resistance
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
VGE = 0V
VCE = 0V
TC = 25°C
Pulse (Note 1)
TC = 25°C
Pulse (Note 1)
TC = 25°C
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Collector current
Emitter current
1200
±20
200
400
200
400
1130
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol Item Conditions UnitRatings
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
VCES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Tstg
Viso
—
—
Min Typ Max
1
0.5
3.7
—
30
10.5
6
—
200
300
300
350
3.2
300
—
0.11
0.18
—
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
K/W
—
—
2.9
2.85
—
—
—
750
—
—
—
—
—
—
1.1
—
—
0.04
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
(Note 2)
trr
(Note 2)
Qrr
(Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Item Test Conditions
VGE(th)
VCE(sat)
Limits Unit
6
4.5
Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
2. IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
7.5
6. Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
Not Recommend
for New Design
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM200DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
10
1
10
2
2
3
5
7
10
3
2
3
5
7
1.0 1.5 2.0 2.5 3.0 3.5
T
j = 25°C
10
8
6
4
2
0200 481216
Tj = 25°C
IC = 400A
IC = 200A
IC = 80A
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–1
210
0
357 2 10
1
357 2 10
2
357
V
GE = 0V
Cies
Coes
Cres
0
100
200
300
400
0481216 20
VCE = 10V
Tj = 25°C
Tj = 125°C
5
4
3
2
1
04000 100 200 300
Tj = 25°C
Tj = 125°C
VGE = 15V
0
100
200
300
400
0246810
VGE = 20
(V)
Tj = 25°C
15
11
12
10
9
8
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR-EMITTER VOLTAGE VCE (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
GATE-EMITTER VOLTAGE VGE (V)
Not Recommend
for New Design
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM200DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
T
C
= 25°C
Per unit base = R
th(j – c)
= 0.18K/W
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
T
C
= 25°C
Per unit base = R
th(j – c)
= 0.11K/W
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.6Ω
T
j
= 125°C
t
d(off)
t
d(on)
t
f
t
r
10
1
7
5
3
2
10
0
10
2
7
5
3
2
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
–di/dt = 400A/µs
T
j
= 25°C
t
rr
I
rr
0
5
10
15
20
0 200 400 600 800 1000
V
CC
= 400V
V
CC
= 600V
I
C
= 200A
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
TIME (s)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES (ns)
COLLECTOR CURRENT I
C
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(ns)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY CURRENT I
rr
(A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
Not Recommend
for New Design
