MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE CM200DU-24H No t fo R r N ec ew om De me sig nd n IC ................................................................... 200A VCES ....................................................... 1200V Insulated Type 2-elements in a pack UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM TC measured point 108 (7.5) 93 0.25 14 14 E2 25 17.5 6 62 48 0.25 15 25 CIRCUIT DIAGRAM (7) 8.85 C1 E2 C1 6 E2 G2 G1 E1 CM C2E1 21.5 2.5 3-M6 NUTS 25.7 4-6. 5 MOUNTING HOLES 4 18 7 0.5 18 2.8 0.5 0.5 4 22 29 LABEL 0.5 8.5 7 7.5 18 +1.0 -0.5 (18) (8.25) C2E1 E2 G2 14 G1 E1 (7.5) Dimensions in mm Feb. 2009 1 MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) Symbol Item Collector-emitter voltage Gate-emitter voltage Conditions VGE = 0V VCE = 0V TC = 25C Pulse TC = 25C Pulse TC = 25C Ratings Unit 1200 20 200 400 200 400 1130 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 V V A A A A W C C Vrms N*m N*m g No t fo R r N ec ew om De me sig nd n VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage -- Mounting torque -- Weight (Note 1) (Note 1) -- -- Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R ICES Rth(c-f) Note 1. 2. 3. 4. 5. 6. VCE = VCES, VGE = 0V Min -- Limits Typ -- Max 1 IC = 20mA, VCE = 10V 4.5 6 7.5 V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.9 2.85 -- -- -- 750 -- -- -- -- -- -- 1.1 -- -- 0.5 3.7 -- 30 10.5 6 -- 200 300 300 350 3.2 300 -- 0.11 0.18 A nF nF nF nC ns ns ns ns V ns C K/W K/W -- 0.04 -- K/W Item Contact thermal resistance Test Conditions VGE = VGES, VCE = 0V IC = 200A, VGE = 15V (Note 4) Tj = 25C Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = 15V RG = 1.6 Resistive load IE = 200A, VGE = 0V IE = 200A, die / dt = -400A / s Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) Unit mA V Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 400 15 VCE = 10V 12 COLLECTOR CURRENT IC (A) VGE = 20 (V) No t fo R r N ec ew om De me sig nd n COLLECTOR CURRENT IC (A) 400 Tj = 25C 300 11 200 10 8 0 0 2 4 6 8 100 Tj = 25C Tj = 125C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V Tj = 25C Tj = 125C 4 3 2 1 0 0 100 200 300 8 6 IC = 400A 4 IC = 200A IC = 80A 2 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 102 Tj = 25C 3 2 102 7 5 3 2 101 1.0 Tj = 25C COLLECTOR CURRENT IC (A) CAPACITANCE Cies, Coes, Cres (nF) 7 5 10 0 400 103 EMITTER CURRENT IE (A) 200 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 9 100 300 7 5 3 2 VGE = 0V Cies 101 7 5 3 2 Coes 100 7 5 Cres 3 2 3.5 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 1.5 2.0 2.5 3.0 Feb. 2009 3 MITSUBISHI IGBT MODULES CM200DU-24H HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 7 5 REVERSE RECOVERY TIME trr (ns) 103 3 td(off) 2 td(on) 102 7 5 tr Tj = 125C VCC = 600V VGE = 15V RG = 1.6 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 101 1 10 2 3 5 7 102 2 2 5 3 3 2 2 Irr trr 102 101 7 5 7 5 3 3 2 2 2 3 5 7 102 100 2 3 5 7 103 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25C Per unit base = Rth(j - c) = 0.11K/W 100 5 101 1 10 5 7 103 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) SWITCHING TIMES (ns) No t fo R r N ec ew om De me sig nd n tf REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 - di /dt = 400A /s 7 7 Tj = 25C 7 5 3 2 3 2 10-1 10-1 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE INSULATED TYPE 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25C 2 100 Per unit base = Rth(j - c) = 0.18K/W 7 5 3 2 3 2 10-1 10-1 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A 15 VCC = 400V VCC = 600V 10 5 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Feb. 2009 4