GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
1
1
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Features
GaN on Si HEMT D-Mode Amplifier
Suitable for linear and saturated applications
Broadband operation from 20 - 1000 MHz
50 Ω Input Matched, Output Unmatched
28 V Operation
14 dB Gain @ 900 MHz
65% Drain Efficiency @ 900 MHz
100% RF Tested
Lead-Free 6 x 5 mm 8-lead PDFN Package
Halogen-Free “Green” Mold Compound
RoHS* Compliant
Description
The NPA1006 is a wideband GaN power amplifier
optimized for 20 - 1000 MHz operation. This
amplifier has been designed for saturated and linear
operation with output levels to 12.5 W (41 dBm)
assembled in a lead-free 6 x 5 mm 8-lead PDFN
plastic package.
The NPA1006 is ideally suited for general purpose
narrowband to broadband applications in test and
measurement, defense communications, land
mobile radio and wireless infrastructure.
Ordering Information
* Restrictions on Hazardous Substances, European Union
Directive 2011/65/EU.
Part Number Package
NPA1006 Bulk Quantity
NPA1006-SMB Sample Board
Functional Schematic
Pin No. Pin Name Function
1 VG Gate Voltage
2 RFIN RF Input
3 RFIN RF Input
4 N/C1 No Connection
5 N/C1 No Connection
6 RFOUT / VD RF Output / Drain Voltage
7 RFOUT / VD RF Output / Drain Voltage
8 N/C1 No Connection
9 Paddle2 Ground
Pin Designations
1. All no connection pins may be left floating or grounded.
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also provide
a low thermal resistance heat path.
VG1
2
3
4
6
5
8
7
RFIN
RFIN
N/C N/C
N/C
Input
Match
RFOUT /
VD
RFOUT /
VD
9
Paddle
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
2
2
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2
DC Electrical Specifications: TC = 25°C
RF Electrical Specifications:
TC = 25°C , VDS = 28 V, IDQ = 88 mA, 100 - 1000 MHz Broadband Characterization Circuit
Parameter Test Conditions Symbol Min. Typ. Max. Units
Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK - 6 - mA
Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - 3 - mA
Gate Threshold Voltage VDS = 28 V, ID = 6 mA VT -2.5 -1.5 -0.5 V
Gate Quiescent Voltage VDS = 28 V, ID = 88 mA VGSQ -2.1 -1.2 -0.3 V
On Resistance VDS = 2 V, ID = 45 mA RON - 0.8 - Ω
Saturated Drain Current VDS = 7 V pulsed, pulse width 300 µs ID(SAT) - 3.5 - A
Parameter Test Conditions Symbol Min. Typ. Max. Units
Small Signal Gain CW, 900 MHz GSS - 15.0 - dB
Gain CW, POUT = 41 dBm, 900 MHz GP 12.5 14.0 - dB
Saturated Output Power CW, 900 MHz PSAT - 42.9 - dBm
Drain Efficiency CW, POUT = 41 dBm, 900 MHz ηD 61 65 - %
Power Added Efficiency CW, POUT = 41 dBm, 900 MHz PAE 57.5 62.4 - %
Drain Efficiency CW, 900 MHz ηDSAT - 70 - %
Drain Voltage (VDS) Drain Voltage VDS - 28 - V
Ruggedness All phase angles VSWR = 15:1, No Device Damage
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
3
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For further information and support please visit:
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3
Absolute Maximum Ratings3,4,5
3. Exceeding any one or combination of these limits may cause permanent damage to this device.
4. MACOM does not recommend sustained operation near these survivability limits.
5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1B
devices.
Parameter Absolute Maximum
Drain Source Voltage, VDS 100 V
Gate Source Voltage, VGS -10 to 3 V
Gate Current, IG 12 mA
Junction Temperature, TJ +200°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
ESD Min. - Human Body Model (HBM) +500 V
6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Parameter Test Conditions Symbol Typical Units
Thermal Resistance VDS = 28 V, TJ = 200°C ӨJC 4.6 °C/W
Thermal Characteristics6
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
4
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4
Parts measured on the characterization board
(20-mil thick RO4350). The PCB’s electrical and
thermal ground is provided using a standard-plated
densely packed via hole array (see recommended
via pattern).
Matching is provided using a combination of lumped
elements and transmission lines as shown in the
simplified schematic above. Recommended tuning
solution component placement, transmission lines,
and details are shown on the next page.
Description
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (28 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Bias Sequencing
Recommended Via Pattern (All dimensions shown as inches)
Characterization Circuit and Recommended Tuning Solution
100 - 1000 MHz Broadband
C1
10 mF
VGS VDS
NPA1006
C3
4.7 mF
L1
0.9 mH
C2
0.01 mF
C6
2400 pF
RF
Out
R1
49.9 W
C4
2400 pF
RF
In C5
4.7 pF
L2
5.4 nH
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
5
5
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For further information and support please visit:
https://www.macom.com/support
5
Reference Value Tolerance Manufacturer Part Number
C1 10 µF 20% TDK C2012X5R1C106M085AC
C2 0.01 µF 10% AVX 06031C103JAT2A
C3 4.7 µF 10% TDK C5750X7R2A475K230KA
C4, C6 2400 pF - Dielectric Labs, Inc. C08BL242X-5UN-X0
C5 4.7 pF 0.1 pF Murata GQM2195C2E4R7BB12
R1 49.9 Ω 1% Panasonic ERJ-6ENF49R9V
L1 0.9 µH 10% Coilcraft 1008AF-901XJLC
L2 5.4 nH 5% Coilcraft 0906-5_LB
PCB Rogers RO4350, r=3.5, 0.020”
Heat Sink Copper Heat Sink 3.0” x 2.75”
Parts List
Characterization Circuit and Recommended Tuning Solution
100 - 1000 MHz Broadband
RFIN RFOUT
VGS VDS
L2 C5 C6
C4
R1
C2
L1
C3
C1
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
6
6
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
6
Deembedded device S-Parameters with RG = 470 Ω
Performance vs. Input Return Loss at POUT = 41 dBm
Broadband Circuit S-Parameters
Performance vs. Frequency at POUT = 41 dBm
Typical Performance as measured in the Broadband 100 - 1000 MHz Characterization
Circuit: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted)
0
5
10
15
20
25
-25
-20
-15
-10
-5
0
0 0.2 0.4 0.6 0.8 1 1.2
s21
s11
s22
s21 (dB)
s11, s22 (dB)
Frequency (GHz)
0
5
10
15
20
25
-25
-20
-15
-10
-5
0
0 0.2 0.4 0.6 0.8 1 1.2
s21
s11
s22
s21 (dB)
s11, S22 (dB)
Frequency (GHz)
10
11
12
13
14
15
16
30
40
50
60
70
80
90
0 0.2 0.4 0.6 0.8 1
Gain
PAE
Gain (dB)
Power Added Efficiency (%)
Frequency (GHz)
6
8
10
12
14
16
-20
-18
-16
-14
-12
-10
0 0.2 0.4 0.6 0.8 1
Gain
IRL
Gain (dB)
Input Return Loss (dB)
Frequency (GHz)
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
7
7
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For further information and support please visit:
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7
Input Return Loss vs. Frequency
Gain vs. Frequency at PIN = 27 dBm
Power Added Efficiency at PIN = 27 dBm vs. Frequency
Gain vs. Frequency
Power Added Efficiency vs. Frequency
Typical Performance as measured in the Broadband 100 - 1000 MHz Characterization
Circuit: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted)
-18
-17
-16
-15
-14
-13
0 0.2 0.4 0.6 0.8 1
+25°C
-40°C
+85°C
Input Return Loss (dB)
Frequency (GHz)
40
50
60
70
80
90
0 0.2 0.4 0.6 0.8 1
+25°C
-40°C
+85°C
Power Added Efficiency (%)
Frequency (GHz)
-18
-17
-16
-15
-14
-13
-12
0 0.2 0.4 0.6 0.8 1
POUT = 30dBm
POUT = 40dBm
POUT = 41dBm
Input Return Loss (dB)
Frequency (GHz)
10
20
30
40
50
60
70
80
90
0 0.2 0.4 0.6 0.8 1
POUT = 30dBm
POUT = 40dBm
POUT = 41dBm
Power Added Efficiency (%)
Frequency (GHz)
10
11
12
13
14
15
0 0.2 0.4 0.6 0.8 1
POUT = 30dBm
POUT = 40dBm
POUT = 41dBm
Gain (dB)
Frequency (GHz)
10
11
12
13
14
15
0 0.2 0.4 0.6 0.8 1
+25°C
-40°C
+85°C
Gain (dB)
Frequency (GHz)
Input Return Loss at PIN = 27 dBm vs. Frequency
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
8
8
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For further information and support please visit:
https://www.macom.com/support
8
Input Return Loss vs. POUT Quiescent VGS vs. Temperature
-1.5
-1.4
-1.3
-1.2
-1.1
-50 -25 0 25 50 75 100
44mA
88mA
150mA
VGSQ (V)
Temperature (oC)
0
10
20
30
40
50
60
70
80
10 15 20 25 30 35 40 45
100MHz
500MHz
900MHz
Power Added Efficiency (%)
POUT (dBm)
-18
-17
-16
-15
-14
-13
-12
10 15 20 25 30 35 40 45
100MHz
500MHz
900MHz
Input Return Loss (dB)
POUT (dBm)
10.0
11.0
12.0
13.0
14.0
15.0
10 15 20 25 30 35 40 45
100MHz
500MHz
900MHz
Gain (dB)
POUT (dBm)
Power Added Efficiency vs. POUT
Gain vs. POUT
Typical Performance as measured in the Broadband 100 - 1000 MHz Characterization
Circuit: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted)
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
9
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
9
2-Tone IMD vs. Output Power vs. IDQ
2-Tone IMD vs. Output Power
(1 MHz Tone Spacing, IDQ = 132 mA, F = 450 MHz)
2-Tone Gain vs. Output Power vs. IDQ
2-Tone IMD vs. Tone Spacing
(POUT = 41 dBm-PEP, IDQ = 132 mA, F = 450 MHz)
Typical 2-Tone Performance as measured in the Broadband 100 - 1000 MHz Characteri-
zation Circuit: 1 MHz Tone Spacing, VDS = 28 V, IDQ = 88 mA (unless otherwise noted)
-60
-50
-40
-30
-20
-10
0.01 0.1 1 10
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
IMD (dBc)
POUT (W-PEP)
50
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.1 1 10 100
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
IMD (dBc)
Tone Spacing (MHz)
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.01 0.1 1 10
44mA
88mA
132mA
150mA
176mA
IMD3 (dBc)
POUT (W-PEP)
50
10
11
12
13
14
15
16
17
0.01 0.1 1 10
44mA
88mA
132mA
150mA
176mA
Gain (dB)
POUT (W-PEP)
50
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
10
10
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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Sample Board and Recommended Tuning Solution
20 - 1000 MHz Broadband Circuit (NPA1006-SMB)
C1
10 mF
VGS VDS
NPA1006
C3
4.7 mF
L1
0.9 mH
C2
0.01 mF
C6
2400 pF
RF
Out
R1
470 W
C4
2400 pF
RF
In
R2
0 W
C5
4.7 pF
L2
5.4 nH
Reference Value Tolerance Manufacturer Part Number
C1 10 µF 20% TDK C2012X5R1C106M085AC
C2 0.01 µF 10% AVX 06031C103JAT2A
C3 4.7 µF 10% TDK C5750X7R2A475K230KA
C4, C6 2400 pF - Dielectric Labs, Inc. C08BL242X-5UN-X0
C5 4.7 pF 0.1 pF Murata GQM2195C2E4R7BB12
R1 470 Ω 1% Panasonic ERJ-3EKF4700V
R2 0 Ω - Panasonic ERJ-6GEY0R00V
L1 0.9 µH 10% Coilcraft 1008AF-901XJLC
L2 5.4 nH 5% Coilcraft 0906-5_LB
PCB Rogers RO4350, r=3.5, 0.020”
Al Heat Sink Aluminum Heat sink
Parts List
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
11
11
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
11
Performance vs. Frequency at POUT= PSAT Performance vs. Frequency at POUT = 41 dBm
Performance vs. Output Power (f = 900 MHz) Small Signal S-Parameters vs. Frequency
10
15
20
25
30
-25
-20
-15
-10
-5
0 0.2 0.4 0.6 0.8 1
s21
s11
s22
s21 (dB)
s11, s22 (dB)
Frequency (GHz)
0
10
20
30
40
40
50
60
70
80
0 0.2 0.4 0.6 0.8 1
Gain
Psat
Drain Eff
Gain (dB)
PSAT (dBm), Drain Efficiency (%)
Frequency (GHz)
0
5
10
15
20
25
30
40
50
60
70
80
0 0.2 0.4 0.6 0.8 1
Gain
Psat
Drain Eff
Gain (dB)
PSAT (dBm), Drain Efficiency (%)
Frequency (GHz)
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
0
10
20
30
40
50
60
70
80
15 20 25 30 35 40 45
Gain
Drain Eff
Gain (dB)
Drain Efficiency (%)
POUT (dBm)
Typical Performance as measured in the Broadband 20 - 1000 MHz Sample Board:
CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted)
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
12
12
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
12
† Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Ni/Pd/Au
Lead-Free 6 x 5 mm 8-Lead PDFN†
All dimensions shown as inches [mm].
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
NPA1006
13
13
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
13
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY
OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
