NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 Features GaN on Si HEMT D-Mode Amplifier Suitable for linear and saturated applications Broadband operation from 20 - 1000 MHz 50 Input Matched, Output Unmatched 28 V Operation 14 dB Gain @ 900 MHz 65% Drain Efficiency @ 900 MHz 100% RF Tested Lead-Free 6 x 5 mm 8-lead PDFN Package Halogen-Free "Green" Mold Compound RoHS* Compliant Description Functional Schematic The NPA1006 is a wideband GaN power amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. VG 1 8 N/C RFIN 2 7 RFOUT / VD RFIN 3 6 RFOUT / VD The NPA1006 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure. N/C 4 5 N/C Input Match 9 Paddle Pin Designations Ordering Information Part Number Package NPA1006 Bulk Quantity NPA1006-SMB Sample Board * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. Pin No. Pin Name Function 1 VG Gate Voltage 2 RFIN RF Input 3 RFIN RF Input 4 N/C1 No Connection 5 N/C1 No Connection 6 RFOUT / VD RF Output / Drain Voltage 7 RFOUT / VD RF Output / Drain Voltage 8 N/C1 No Connection 9 Paddle2 Ground 1. All no connection pins may be left floating or grounded. 2. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 RF Electrical Specifications: TC = 25C , VDS = 28 V, IDQ = 88 mA, 100 - 1000 MHz Broadband Characterization Circuit Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 900 MHz GSS - 15.0 - dB Gain CW, POUT = 41 dBm, 900 MHz GP 12.5 14.0 - dB Saturated Output Power CW, 900 MHz PSAT - 42.9 - dBm Drain Efficiency CW, POUT = 41 dBm, 900 MHz D 61 65 - % Power Added Efficiency CW, POUT = 41 dBm, 900 MHz PAE 57.5 62.4 - % Drain Efficiency CW, 900 MHz DSAT - 70 - % Drain Voltage (VDS) Drain Voltage VDS - 28 - V Ruggedness All phase angles VSWR = 15:1, No Device Damage DC Electrical Specifications: TC = 25C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK - 6 - mA Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - 3 - mA Gate Threshold Voltage VDS = 28 V, ID = 6 mA VT -2.5 -1.5 -0.5 V Gate Quiescent Voltage VDS = 28 V, ID = 88 mA VGSQ -2.1 -1.2 -0.3 V On Resistance VDS = 2 V, ID = 45 mA RON - 0.8 - Saturated Drain Current VDS = 7 V pulsed, pulse width 300 s ID(SAT) - 3.5 - A 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 Absolute Maximum Ratings3,4,5 Parameter Absolute Maximum Drain Source Voltage, VDS 100 V Gate Source Voltage, VGS -10 to 3 V Gate Current, IG 12 mA Junction Temperature, TJ +200C Operating Temperature -40C to +85C Storage Temperature -65C to +150C ESD Min. - Human Body Model (HBM) +500 V 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Operating at nominal conditions with TJ 200C will ensure MTTF > 1 x 106 hours. Thermal Characteristics6 Parameter Test Conditions Symbol Typical Units Thermal Resistance VDS = 28 V, TJ = 200C JC 4.6 C/W 6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1B devices. 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 Characterization Circuit and Recommended Tuning Solution 100 - 1000 MHz Broadband VGS VDS C1 10 mF C2 0.01 mF C3 4.7 mF R1 49.9 W L1 0.9 mH RF In L2 5.4 nH C4 2400 pF Description Parts measured on the characterization board (20-mil thick RO4350). The PCB's electrical and thermal ground is provided using a standard-plated densely packed via hole array (see recommended via pattern). Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page. NPA1006 C5 4.7 pF C6 2400 pF RF Out Bias Sequencing Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (28 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. Recommended Via Pattern (All dimensions shown as inches) 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 Characterization Circuit and Recommended Tuning Solution 100 - 1000 MHz Broadband VGS VDS C1 C3 C2 RFIN R1 L1 RFOUT C4 L2 C5 C6 Parts List Reference Value Tolerance Manufacturer Part Number C1 10 F 20% TDK C2012X5R1C106M085AC C2 0.01 F 10% AVX 06031C103JAT2A C3 4.7 F 10% TDK C5750X7R2A475K230KA C4, C6 2400 pF - Dielectric Labs, Inc. C08BL242X-5UN-X0 C5 4.7 pF 0.1 pF Murata GQM2195C2E4R7BB12 R1 49.9 1% Panasonic ERJ-6ENF49R9V L1 0.9 H 10% Coilcraft 1008AF-901XJLC L2 5.4 nH 5% Coilcraft 0906-5_LB PCB Rogers RO4350, r=3.5, 0.020" Heat Sink Copper Heat Sink 3.0" x 2.75" 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 Typical Performance as measured in the Broadband 100 - 1000 MHz Characterization Circuit: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted) Deembedded device S-Parameters with RG = 470 25 Broadband Circuit S-Parameters 25 0 0 s21 s21 s11 -15 -20 5 -20 -25 1.2 0 -15 5 0.2 0.4 0.6 0.8 1 s21 (dB) 10 10 0 0.2 0.4 0.6 0.8 1 s11, s22 (dB) -10 -10 0 -5 s22 15 15 0 s11 20 -5 s22 s11, S22 (dB) s21 (dB) 20 -25 1.2 Frequency (GHz) Frequency (GHz) Performance vs. Frequency at POUT = 41 dBm Performance vs. Input Return Loss at POUT = 41 dBm 16 90 16 -10 14 -12 12 -14 10 -16 Gain (dB) 70 13 60 12 50 11 40 10 30 0 0.2 0.4 0.6 Frequency (GHz) 0.8 1 Gain 8 6 -20 0 0.2 0.4 0.6 0.8 Frequency (GHz) 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support -18 IRL 1 Input Return Loss (dB) 14 Power Added Efficiency (%) 80 PAE Gain (dB) Gain 15 NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 Typical Performance as measured in the Broadband 100 - 1000 MHz Characterization Circuit: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted) Gain vs. Frequency at PIN = 27 dBm Gain vs. Frequency 15 15 +25C 14 14 -40C 13 12 Gain (dB) Gain (dB) +85C POUT = 30dBm 13 12 POUT = 40dBm 11 11 POUT = 41dBm 10 10 0 0.2 0.4 0.6 0.8 0 1 0.2 0.4 0.6 0.8 1 Frequency (GHz) Frequency (GHz) Input Return Loss vs. Frequency Input Return Loss at PIN = 27 dBm vs. Frequency -12 -13 -13 POUT = 40dBm Input Return Loss (dB) Input Return Loss (dB) POUT = 30dBm POUT = 41dBm -14 -15 -16 -17 -14 -15 -16 +25C -17 -40C +85C -18 -18 0 0.2 0.4 0.6 0.8 0 1 0.2 Frequency (GHz) 0.6 0.8 1 Frequency (GHz) Power Added Efficiency vs. Frequency Power Added Efficiency at PIN = 27 dBm vs. Frequency 90 90 POUT = 30dBm POUT = 40dBm POUT = 41dBm 80 70 +25C Power Added Efficiency (%) Power Added Efficiency (%) 0.4 60 50 40 30 20 10 0 0.2 0.4 0.6 Frequency (GHz) 0.8 1 -40C 80 +85C 70 60 50 40 0 0.2 0.4 0.6 0.8 Frequency (GHz) 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 1 NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 Typical Performance as measured in the Broadband 100 - 1000 MHz Characterization Circuit: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted) Power Added Efficiency vs. POUT Gain vs. POUT 80 Power Added Efficiency (%) 15.0 Gain (dB) 14.0 13.0 12.0 100MHz 500MHz 11.0 900MHz 10.0 10 15 20 25 30 35 40 70 100MHz 60 500MHz 50 900MHz 40 30 20 10 0 10 45 15 20 25 POUT (dBm) 40 45 75 100 Quiescent VGS vs. Temperature -1.1 -12 100MHz 500MHz 900MHz 44mA -1.2 88mA 150mA -14 VGSQ (V) Input Return Loss (dB) 35 POUT (dBm) Input Return Loss vs. POUT -13 30 -15 -1.3 -16 -1.4 -17 -18 10 15 20 25 30 POUT (dBm) 35 40 45 -1.5 -50 -25 0 25 50 o Temperature ( C) 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 Typical 2-Tone Performance as measured in the Broadband 100 - 1000 MHz Characterization Circuit: 1 MHz Tone Spacing, VDS = 28 V, IDQ = 88 mA (unless otherwise noted) 2-Tone Gain vs. Output Power vs. IDQ 2-Tone IMD vs. Output Power vs. IDQ -10 17 44mA -15 16 88mA 132mA 15 150mA -25 176mA Gain (dB) IMD3 (dBc) -20 -30 -35 14 13 -40 12 -45 11 -50 0.01 0.1 1 10 44mA 88mA 132mA 150mA 176mA 10 0.01 50 0.1 1 POUT (W-PEP) 2-Tone IMD vs. Output Power (1 MHz Tone Spacing, IDQ = 132 mA, F = 450 MHz) 50 2-Tone IMD vs. Tone Spacing (POUT = 41 dBm-PEP, IDQ = 132 mA, F = 450 MHz) -10 -10 -IMD3 -15 +IMD3 -20 -20 -IMD5 +IMD5 -30 -IMD7 IMD (dBc) IMD (dBc) 10 POUT (W-PEP) +IMD7 -40 -25 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 -30 -35 -40 -50 -45 -60 0.01 0.1 1 POUT (W-PEP) 10 50 -50 0.1 1 10 Tone Spacing (MHz) 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 100 NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 Sample Board and Recommended Tuning Solution 20 - 1000 MHz Broadband Circuit (NPA1006-SMB) VGS VDS C1 10 mF C2 0.01 mF C3 4.7 mF R1 470 W R2 0W L1 0.9 mH L2 5.4 nH RF In C4 2400 pF NPA1006 C5 4.7 pF C6 2400 pF RF Out Parts List Reference Value Tolerance Manufacturer Part Number C1 10 F 20% TDK C2012X5R1C106M085AC C2 0.01 F 10% AVX 06031C103JAT2A C3 4.7 F 10% TDK C5750X7R2A475K230KA C4, C6 2400 pF - Dielectric Labs, Inc. C08BL242X-5UN-X0 C5 4.7 pF 0.1 pF Murata GQM2195C2E4R7BB12 R1 470 1% Panasonic ERJ-3EKF4700V R2 0 - Panasonic ERJ-6GEY0R00V L1 0.9 H 10% Coilcraft 1008AF-901XJLC L2 5.4 nH 5% Coilcraft 0906-5_LB PCB 10 Al Heat Sink Rogers RO4350, r=3.5, 0.020" Aluminum Heat sink M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 Typical Performance as measured in the Broadband 20 - 1000 MHz Sample Board: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted) Performance vs. Frequency at POUT = 41 dBm Performance vs. Frequency at POUT= PSAT 30 80 70 15 60 10 50 5 0 70 30 Gain (dB) Gain (dB) 20 40 0.2 0.4 0.6 0.8 20 50 10 40 0 40 0 1 0 0.2 Frequency (GHz) 0.6 0.8 1 Small Signal S-Parameters vs. Frequency 30 80 13.5 60 13.0 50 12.5 40 30 12.0 Gain Drain Eff 20 s11 s22 25 -10 20 -15 15 -20 10 11.0 10.5 15 20 25 30 POUT (dBm) 35 40 0 45 10 -25 0 0.2 0.4 0.6 0.8 Frequency (GHz) 11 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 1 s11, s22 (dB) 70 Drain Efficiency (%) 14.0 -5 s21 s21 (dB) 14.5 Gain (dB) 0.4 Frequency (GHz) Performance vs. Output Power (f = 900 MHz) 11.5 60 Gain Psat Drain Eff PSAT (dBm), Drain Efficiency (%) 25 PSAT (dBm), Drain Efficiency (%) 80 Gain Psat Drain Eff NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 Lead-Free 6 x 5 mm 8-Lead PDFN All dimensions shown as inches [mm]. Meets JEDEC moisture sensitivity level 3 requirements. Plating is Ni/Pd/Au 12 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1006 GaN Wideband Power Amplifier, 28 V, 12.5 W 20 - 1000 MHz Rev. V2 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 13 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support