Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
64 83
89 120
RθJL 53 70
Junction and Storage Temperature Range
A
PD
°C
1.5
0.96
-55 to 150
TA=70°C
ID
7
5.5
30
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±12Gate-Source Voltage
Drain-Source Voltage 30
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
AO8818
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
VDS (V) = 30V
ID = 7A (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 10V)
RDS(ON) < 20mΩ (VGS = 4.5V)
RDS(ON) < 27mΩ (VGS = 2.5V)
ESD Rating: 1500V HBM
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
General Description
The AO8818 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V VGS(MAX) rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product AO8818 is Pb-free
(meets ROHS & Sony 259 specifications). AO8818L is
a Green Product ordering option. AO8818 and
A
O8818L are electrically identical.
Alpha & Omega Semiconductor, Ltd.
AO8818
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS 10
µ
A
BVGSO ±12 V
VGS(th) 0.6 0.94 1.5 V
ID(ON) 30 A
15 18
TJ=125°C 21 25
17 20 m
Ω
22 27 m
Ω
gFS 45 S
VSD 0.74 1 V
IS2.5 A
Ciss 880 1060 pF
Coss 130 pF
Crss 90 pF
Rg1.3 2 Ω
Qg11.6 14 nC
Qgs 1.9 nC
Qgd 4.6 nC
tD(on) 8.7 ns
tr13.7 ns
tD(off) 36 ns
tf11 ns
trr 16 20 ns
Qrr 7.7 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=4.5V, VDS=5V
VGS=10V, ID=7A
Reverse Transfer Capacitance
IF=7A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
Zero Gate Voltage Drain Current
VDS=0V, VGS=±10VGate-Body leakage current
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
VGS=2.5V, ID=4A
IS=1A,VGS=0V
VDS=5V, ID=7A
VGS=4.5V, ID=5A
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=7A
Gate Source Charge
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=15V, f=1MHz
Gate Drain Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate-Source Breakdown Voltage VDS=0V, IG=±250uA
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev 1: Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO8818
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
012345
VDS(Volts)
Figure 1: On-Regions Characteristi
cs
ID(A)
VGS =2V
VGS =2.5V
3.5V
10V
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
25°C
125°C
VDS=5V
0
10
20
30
40
0 5 10 15 20
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
RDS(ON)(mΩ)
VGS =4.5V
VGS =2.5V
VGS =10V
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Norm aliz e ON-Resistance
VGS=4.5V
VGS=2.5V
ID=5A
ID=4A
VGS=10V
ID=7A
10
20
30
40
50
60
02468
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON)(mΩ)
25°C
125°C
ID=7A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
IS(A)
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO8818
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0 5 10 15
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS(Volts)
VDS=15V
ID=7A
0
400
800
1200
1600
2000
0 5 10 15 20 25 30
VDS(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
Crss
Coss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
TJ(Max)=150°C
TA=25°C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
T
on
T
P
D
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=83°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
1
0
m
s
1m
0.1s
1
s
10s
D
C
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.