To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
Januray 2014
Thermal Characteristics
FQD11P06 / FQU11P06
P-Channel QFET® MOSFET
-60 V, -9.4 A, 185 mΩ
Description
www.fairchildsemi.com
1
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications..
Features
•-9.4 A, -60 V, RDS(on) = 185 mΩ (Max.) @ VGS = -10 V,
ID = -4.7 A
•Low Gate Charge (Typ. 13 nC)
•Low Crss (Typ. 45 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Parameter
FQD11P06TM / FQU11P06TU Unit
V
DSS
Drain-Source Voltage -60 V
I
D
Drain Current - Continuous (T
C
= 25°C) -9.4 A
- Continuous (T
C
= 100°C) -5.95 A
I
DM
Drain Current - Pulsed
(Note 1)
-37.6 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
160 mJ
I
AR
Avalanche Current
(Note 1)
-9.4 A
E
AR
Repetitive Avalanche Energy
(Note 1)
3.8 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
-7.0 V/ns
P
D
Power Dissipation (T
A
= 25°C) * 2.5 W
Power Dissipation (T
C
= 25°C) 38 W
- Derate above 25°C 0.3 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
300 °C
Symbol Parameter FQD11P06TM /
FQU11P06TU
Unit
RJC Thermal Resistance, Junction to Case, Max. 3.28
oC/W
RJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50
©2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C2
GDS
I-PAK
D-PAK
G
S
D
G
S
D
Package Marking and Ordering Information
www.fairchildsemi.com
2
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET
Electrical Characteristics TC = 25°C unless otherwise noted.
Part Number Top Mark Package Reel Size Tape Width Quantity
FQD11P06FQD11P06TM D-PAK 330 mm 16 mm 2500 units
Packing Method
Tape and Reel
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 2.1 mH, I
AS
= -9.4 A, V
DD
= -25 V, R
G
= 25 Ω, starting T
J
= 25°C.
3. I
SD
≤ -11.4 A, di/dt ≤ 300 A/µs, V
DD
≤ BV
DSS,
starting T
J
= 25°C.
4. Essentially independent of operating temperature.
Symbol Parameter Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= -250 µA-60 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient I
D
= -250 µA, Referenced to 25°C -- -0.07 -- V/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= -60 V, V
GS
= 0 V -- -- -1 µA
V
DS
= -48 V, T
C
= 125°C -- -- -10 µA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= -25 V, V
DS
= 0 V -- -- -100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= 25 V, V
DS
= 0 V -- -- 100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250 µA-2.0 -- -4.0 V
R
DS(on)
Static Drain-Source
On-Resistance V
GS
= -10 V, I
D
= -4.7 A -- 0.15 0.185 Ω
g
FS
Forward Transconductance
V
DS
= -30 V, I
D
= -4.7 A
-- 4.9 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 420 550 pF
C
oss
Output Capacitance -- 195 250 pF
C
rss
Reverse Transfer Capacitance -- 45 60 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= -30 V, I
D
= -5.7 A,
R
G
= 25 Ω
(Note 4)
-- 6.5 25 ns
t
r
Turn-On Rise Time -- 40 90 ns
t
d(off)
Turn-Off Delay Time -- 15 40 ns
t
f
Turn-Off Fall Time -- 45 100 ns
Q
g
Total Gate Charge V
DS
= -48 V, I
D
= -11.4 A,
V
GS
= -10 V
(Note 4)
-- 13 17 nC
Q
gs
Gate-Source Charge -- 2.0 -- nC
Q
gd
Gate-Drain Charge -- 6.3 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- -9.4 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- -37.6 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= -9.4 A -- -- -4.0 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= -11.4 A,
dI
F
/ dt = 100 A/µs
-- 83 -- ns
Q
rr
Reverse Recovery Charge -- 0.26 -- µC
©2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C2
FQU11P06FQU11P06TU I-PAK N/A N/A 70 units
Tube
www.fairchildsemi.com
3
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET
Typical Characteristics
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10
-1
10
0
10
1
150
℃
※ Notes :
1. V
GS
= 0V
2. 250µ s Pulse Test
25
℃
-I
DR
, Reverse Drain Current [A]
-V
SD
, Source-Drain Voltage [V]
0 01 20 03 04 50
0.0
0.2
0.4
0.6
0.8
※
Note : T
J = 25
℃
V
GS
= - 20V
V
GS
= - 10V
R
DS(on)
[
Ω
],
Drain-Source On-Resistance
-I
D
, Drain Current [A]
2 684 10
10
-1
10
0
10
1
150
℃
25
℃
-55
℃
※ Notes :
1. V
DS
= -30V
2. 250µ s Pulse Test
-I
D
, Drain Current [A]
-V
GS
, Gate-Source Voltage [V]
10
-1 0
10
1
10
-1
10
0
10
1
V
GS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
-I
D
, Drain Current [A]
10
-V
DS
, Drain-Source Voltage [V]
0 2 4 6 8 10 12 14
0
2
4
6
8
10
12
V
DS
= -30V
V
DS
= -48V
※
Note : I
D
= -11.4 A
-V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
-V
DS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
©2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C2
www.fairchildsemi.com
4
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET
Typical Characteristics (Continued)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
N otes :
※
1. Z
θJC
(t) = 3.28 /W M ax.
℃
2. D u ty F a c to r, D = t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
sin gle puls e
D=0.5
0.02
0.2
0.05
0.1
0.01
25 50 75 100 125 150
0
2
4
6
8
10
-I
D
, Drain Current [A]
T
C
, Case Temperature [
℃
]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100
µ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
-I
D
, Drain Current [A]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
※
Notes :
1. V
GS
= -10 V
2. I
D
= -4.7 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
GS
= 0 V
2. I
D
= -250 µ A
-BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-V
DS
, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
t
1
, Squa re W ave P u lse D uration [sec]
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
ZJC(t), Thermal Response [oC/W]
©2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C2
www.fairchildsemi.com
5
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VVDSDS
VVGSGS 1010%%
90%90%
ttd(d(onon)) ttrr
tt onon tt ofofff
ttd(d(ofofff)) ttff
VVDDDD
VVDSDS
RRLL
DUTDUT
RRGG
VVGSGS
ChChargargee
VVGSGS
QQgg
QQgsgs QQgdgd
VVGSGS
DUDUTT
VVDSDS
300300nFnF
50K50KΩΩ
200n200nFF
12V12V
SamSamee T Tyypepe
as as DUDUTT
E
EEAS AS AS -
-
--
===
2
1
2
1
2
1
2
1
---
---
------ LLL
ASASAS
III
BVBVDSDSSS
222 ---
-------
--------
--------
---------
-----
BV
BVDSDSSS -V-V
DDDD
VVDDDD
VVDSDS
BVBVDSSDSS
t t pp
VVDDDD
IIASAS
VVDS DS (t)(t)
IID D (t(t))
TiTimmee
DUDUTT
RRGG
LLL
III DDD
t t pp
IG = const.
VVGSGS
VVGSGS
©2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C2
www.fairchildsemi.com
6
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
••
DUTDUT
VVDSDS
++
__
DrivDriverer
RRGG ComCompplliimmentent ofof DUTDUT
(N-(N-CChannelhannel))
VVGSGS •• ddvv//dtdt ccoontntrroolllleed d bbyy RRGG
II
SDSD ccononttrrolollleded byby pupullsse e peperriiodod
VVDDDD
LLL
II SDSD
1010VV
VVGSGS
( ( DrivDriver er ))
II SDSD
( ( DUT DUT ))
VVDSDS
( ( DUT DUT ))
VVDDDD
BoBodydy DDiiooddee
ForForwward ard VVololttagage e DrDropop
IIFMFM ,, BoBodydy DDiiodode e FFororwwaarrd d CCuurrrrenentt
VVSDSD
BoBodydy DDiiodode e RReevveerrssee CCuurrrrenentt
IIRMRM
BoBodydy DiDiodode e RReecovcoveerryy dvdv/d/dtt
didi//dtdt
D
D
D =
=
=-
-
---
--
--
Gate
Gate
Gate
------------------
---------
P
P
Pul
ul
uls
s
s
--------
--------
--------
e
e
e W
W
Wi
i
id
d
d
-----
-----
-----
t
t
th
h
h-
-
-
GaGa
Gate
te
te Pu
Pu
Pull
lss
se
e
e
PePe
Perr
rii
iodod
od
©2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C2
www.fairchildsemi.com
7
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET
Mechanical Dimensions
©2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C2
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
www.fairchildsemi.com
8
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET
Mechanical Dimensions
©2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C2
Figure 17. TO251 (I-PAK), Molded, 3-Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO251-003
www.fairchildsemi.com
9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
SerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
Rev. I66
tm
®
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C2
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
