IRF840B - FAIRCHILD SEMICONDUCTOR

February 2005

Rev. B, February 2005

IRF840B/IRFS840B

500V N-Ch annel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies,

power factor correction and electronic lamp ballasts based

on half bridge.

Features

• 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V

• Low gate charge ( typical 41 nC)

• Low Crss ( typical 35 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings TC = 25°C unless otherwise noted

* Drain current limited by maximum junction temperature.

Thermal Char acteristics

Symbol Parameter IRF840B IRFS840B Units

VDSS Drain-Source Voltage 500 V

IDDrain Current - Continuous (TC = 25°C) 8.0 8.0 A

- Continuous (TC = 100°C) 5.1 5.1 A

IDM Drain Current - Pulsed (Note 1) 32 32 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 320 mJ

IAR Avalanche Current (Note 1) 8.0 A

EAR Repetitive Avalanche Energy (Note 1) 13.4 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns

PDPower Dissipation (TC = 25°C) 134 44 W

- Derate above 25°C 1.08 0.35 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter IRF840B IRFS840B Units

RθJC Thermal Resistance, Junction-to-Case Max. 0.93 2.86 °C/W

RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W

RθJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W

TO-220F

IRFS Series

TO-220

IRF Seri es

Rev. B, February 2005

IRF840B/IRFS840B

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 9.0mH, IAS = 8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 8.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Co nditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA500 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.55 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 10 µA

VDS = 400 V, TC = 125°C -- -- 100 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 4.0 A -- 0.65 0.8 Ω

gFS Forward Transconductance VDS = 40 V, ID = 4.0 A (Note 4) -- 7.3 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 1400 1800 pF

Coss Output Capacitance -- 145 190 pF

Crss Reverse Transfer Capacitance -- 35 45 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 250 V, ID = 8.0 A,

RG = 25 Ω

(Note 4, 5)

-- 22 55 ns

trTurn-On Rise Time -- 65 140 ns

td(off) Turn-Off Delay Time -- 125 260 ns

tfTurn-Off Fall Time -- 75 160 ns

QgTotal Gate Charge VDS = 400 V, ID = 8.0 A,

VGS = 10 V

(Note 4, 5)

-- 41 53 nC

Qgs Gate-Source Charge -- 6.5 -- nC

Qgd Gate-Drain Charge -- 17 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 8.0 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.0 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 8.0 A,

dIF / dt = 100 A/µs (Note 4)

-- 390 -- ns

Qrr Reverse Recovery Charge -- 4.2 -- µC

IRF840B/IRFS840B

0 5 10 15 20 25 30

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 20V

GS = 10V

Note : T※J = 25℃

RDS(ON) [Ω],

Drain-Source On-Resistance

, Drain Current [A]

246810

10-1

100

101

150oC

25oC

-55oC Notes :※

1. VDS = 40V

2. 250µ s Pulse Test

ID, Drain Current [A]

GS, Gate-Source Voltage [V]

10-1 100101

10-1

100

101

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

Notes :※

1. 250µ s Pulse Test

2. TC

= 25℃

ID, Drain Current [A]

DS, Drain-Source Voltage [V]

0 5 10 15 20 25 30 35 40 45

DS = 250V

VDS = 100V

DS = 400V

Note : I※D

= 8.0 A

VGS, Gate-Source Voltage [V]

, Total Gate Charge [nC]

10-1 100101

500

1000

1500

2000

2500

3000

Coss

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

Notes :※

1. VGS = 0 V

2. f = 1 MHz

Crss

Ciss

Capacitance [pF]

DS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

10-1

100

101

150℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

25℃

IDR, Reverse Drain Current [A]

SD, Source-Drain voltage [V]

Typical Characteristics

Figure 5. Capacitance Cha rac te ri st i cs Figure 6. Gate Char ge Character is tics

Figure 3. On-Resistance Vari at ion vs

Drain Current and Gate Voltage Figur e 4. B ody Diode Forward Voltage

Variation with Sour ce Cur r ent

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Charact er ist ic s

IRF840B/IRFS840B

100101102103

10-2

10-1

100

101

102

100 ms

10 ms

1 ms

100 µs

Operation in This Area

is Limited by R DS(on)

Notes :※

1. TC

= 25 o

2. TJ

= 150 o

3. Single Pulse

ID, Drain Current [A]

DS, Drain-Source Voltage [V]

25 50 75 100 125 150

ID, Drain Current [A]

, Case Temperature [ ]℃

100101102103

10-2

10-1

100

101

102

10 µs

10 ms

1 ms

100 µs

Operation in This Area

is Limited by R DS(on)

Notes :※

1. TC

= 25 o

2. TJ

= 150 o

3. Single Pulse

ID, Drain Current [A]

DS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :※

1. VGS = 10 V

2. ID

= 4.0 A

RDS(ON), (Normalized)

Drain-Source On-Resistance

J, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes :※

1. VGS = 0 V

2. ID

= 250 µ A

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

, Junction Temperature [o

Typical Characteristics (Continued)

Figure 9 -1. M aximum Safe O per at in g Are a

for I R F 8 40B

Figure 10. Maximum Drain Current

vs Case Temperature

Figu re 7. Breakdown Vol tage Variati o n

vs Temperature Figure 8. On-Resistance Variation

vs Temperature

Figure 9-2. Maxim um Saf e Operat ing Ar ea

for IRF S 84 0B

IRF840B/IRFS840B

Typical Characteristics (Continued)

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

N o tes :※

1. ZθJC(t) = 0.93 /W M ax.℃

2. D u ty Fac tor, D = t1/t2

3. TJM - TC = PDM * ZθJC(t)

sin g le p u lse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Thermal Response

t1, Square Wave Pulse Duration [sec]

Figure 11-1. Transient The rm al Respon se C ur ve for IRF840 B

PDM

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

N o tes :※

1. ZθJC(t) = 2.86 /W Max.℃

2. Duty Factor, D=t1/t2

3. TJM - TC = PDM * ZθJC(t)

sin g le p u lse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Thermal Response

t1, Square Wave Pulse Duration [sec]

Figure 11-2. T r ansient Thermal Response Curve for IRFS840B

PDM

IRF840B/IRFS840B

Charge

VGS

10V

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

10V

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off ) tf

VDD

10V

VDS

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off ) tf

VDD

10V

VDS

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

IRF840B/IRFS840B

Peak Diode Recover y dv/dt Tes t Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

D = Gate Pulse Width

Gate Pulse Period

--------------------------

IRF840B/IRFS840B

Mechanical Dimensions

Dimensions in Millimeters

TO - 220

IRF840B/IRFS840B

Package Dimensions (Continued)

(7.00) (0.70)

MAX1.47

(30°)

3.30 ±0.10

15.80 ±0.20

15.87 ±0.20

6.68 ±0.20

9.75 ±0.30

4.70 ±0.20

10.16 ±0.20

(1.00x45°)

2.54 ±0.20

0.80 ±0.10

9.40 ±0.20

2.76 ±0.20

0.35 ±0.10

ø3.18 ±0.10

2.54TYP

[2.54 ±0.20]2.54TYP

[2.54 ±0.20]

0.50 +0.10

–0.05

TO-220F

Dimensions in Millimeters

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I15

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

FAST®

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

I2C™

i-Lo™

ImpliedDisconnect™

IntelliMAX™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC®

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerEdge™

PowerSaver™

PowerTrench®

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

SILENT SWITCHER®

SMART START™

SPM™

Stealth™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic®

TINYOPTO™

TruTranslation™

UHC™

UltraFET®

UniFET™

VCX™

ACEx™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E2CMOS™

EnSigna™

FACT™

FACT Quiet Series™

Across the board. Around the world.™

The Power Franchise®

Programmable Active Droop™