2$SB1132 Transistor, PNP Features available in MPT3 (MPT, SC-62) package package marking: 2SB1132; BAx, where * is hr code P, =2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB) low collector saturation voltage, typically Voe(sat) = 0.2 V, at Ic/lg = 500 mA/- 50 mA) complementary pair with 2SD1664 Applications medium power amplifier Dimensions (Units : mm) 2SB1132 (MPT3) g 45744 SI 1.6201 aay PT | % - 0.4 20.1 | bes 1.0 20.3 | 0.111 0.4 #0.1 18208)" |" (15 204 3.020.2 (1) Base (2) Collector (3) Emitter 114 Surface Mount Transistors Transistor, PNP, 2SB Series 2SB1132 Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Collector-to-base voltage | Voro 40 Vv Collector-to-emitter voltage VcEo 732 Vv Emitter-to-base voltage VeBO -5 Vv -1 DC Collector current Ic A -2 Py =20 ms, duty = 50% ae 0.5 Collector dissipation Po WwW - 2 Mounted on 40 x 40 x 0.7 mm ceramic PCB Junction temperature Tj 150 C Storage temperature Tstg 55 ~ +150 C Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol; Min | Typical] Max Unit Conditions Collector-to-base _ breakdown voltage BVcao | ~40 Vic =-50 HA Collector-to-emitter _ breakdown voltage BVceo | -32 Vi |lc=-1mA Emitter-to-base =_ breakdown voltage BVeBo | -5 V |le=50 pA Collector cutoff current logo 0.5 HA |Vceg=-20V Emitter cutoff current leo -0.5 HA |Veg=-4V DC current gain hee 82 390 Voge =-3 V, le =-100 mA Collector-to-emitter _ rm saturation voltage Vce(sat) 0.2 0.5 Vv lo/lg =-500 mA/50 mA Transition frequency fr 150 MHz |Vc_e =5 V, Ie = 50 mA, f = 30 MHz Output capacitance Cob 20 30 PF [Vog =-10V, Ile =0A, f= 1 MHz hee rankings item P Q R Nee 82 ~180 120 ~ 270 180 ~ 390 Surface Mount Transistors ROM 115 2SB1132 Transistor, PNP, 2SB Series Electrical characteristic curves = 2.0 oy oO a & N - a N\ Mounted on a a 40 X 40 X0.7mm a) NX ceramic PCB 010 I c 3 XN KE oO a a 6 Unmounted oO oh Ol 0 25 50 75 100 125 160 AMBIENT TEMPERATURE : Ta (GC) Figure 1 ~500 Vce=6 J 3 COLLECTOR CURRENT :IcimA) | 3 Oo 0.2 -0.4 0.6 ~0.B -1.0 ~1.2 1.4 1.6 BASE TO EMITTER VOLTAGE: Vae(V) Figure 3 DC CURRENT GAIN : hre -1 10 100 COLLECTOR CURRENT : Ic (mA) Figure 5 Ta=28C 8 Ta=25C + Single pulse < *s 2 -) + oe 5 : 2 w fa a =) oO a e -01 o Ww am a Q o -0.01 -01 -1 -10 -32 COLLECTOR TO EMITTER VOLTAGE : Vce (V) Figure 2 < 2 o a. W a a > 5 x - 5 Ee a 4 a 2 1 oS {g=OmA COLLECTOR TO EMITTER VOLTAGE -VGECY) Figure 4 | 8 OG CURRENT GAIN : bre = N 8 - 1000 COLLECTOR CURRENT : {c(mA) Figure 6 116 Surface Mount Transistors Transistor, PNP, 2SB Series 2$B1132 1 Ta: 25C 6s Icle=10 Ke. yo e 3 24 eS O.. c of he Or 42 5> R . = -0.02 -1 10 100 = ~ COLLECTOR CURRENT : Ic (mA) Figure 7 2 8 TRANSITION FREQUENCY : fr (MHz) 8 1 ~2 ~5 -10 -20 ~ 50 --100 COLLECTOR CURRENT : Ic (mA) Figure 9 Ordering information Package Tape Code T100 Basic order quantity 1000 2S8B1132 * * = Standard, * = Semi-standard, * = Special order a Qo 08 1 a ! 2 COLLECTOR TO EMITTER VOLTAGE : Vce (V) -02 sen 0 -1 10 100 BASE CURRENT : Ip (mA) Figure 8 Ta=25C f= TMHz le =0A QUTPUT CAPACITANCE * Goo (pF) COLLECTOR ~0.5 A ~2 ~5 -10 20 COLLECTOR TO BASE VOLTAGE : Ves (V) Figure 10 Surface Mount Transistors ROM 117