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1.1
2 3
DATA SHEET
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1 Features
16 bits resolution
Differential inputs
Single + 5V supply
Low power 15 mW
SOIC16 package
Self- and system-calibration
with auto-calibration on power up
16 kHz maximum sampling frequency
Internal temperature measurement
Internal factory trimmed precision reference
Programmable current sources
Digital comparator
Active wake-up
PGA gains 1, 6, 24, 50, 100
Zero offset
Zero offset TC
Extremely low noise
Internal oscillator with comparator for active wake up
3-wire serial interface, !P compatible
Temperature range – 40 to + 125 °C
Individual 24-bit serial number
2 Applications
Battery management for automotive systems
Power management
mV/µV-meter
High-precision voltage and current measurement
3 General description
The AS8501 is a complete, low power data acquisition system
for very small signals (i.e. voltages from shunt resistors,
thermocouples) that operates on a single 5 V power supply. The
chip powers up with a set of default conditions at which time it
can be operated as a read-only-converter. Reprogramming is at
any time possible by just writing into two internal registers via
the serial interface.
The AS8501 has four ground refering inputs which can be
switched separately to the internal PGA. Two input channels can
also be operated as a fully differential ground free input. The
system can measure both positive and negative input signals.
The PGA amplification ranges from 6 to 100 which enables the
system to measure signals from 7mV to 120 mV full scale range
with high accuracy, linearity and speed.
The chip contains a high precision bandgap reference and an
active offset compensation that makes the system offset free
(better than 0,5 !V) and the offset-TC value negligible. The built-
in programmable digital filter allows an effective noise
suppression if the high speed is not necessary in the application.
The input noise density is only 35 nV / Hz and due to
the high internal chopping frequency the system is free of 1/f-noise down
to DC.The 0-10 Hz noise is typical below 1 µ V i.e. as good or better than
any other available chopper amplifier.
For high speed synchronous measurements the chip can run in an
automatic switching mode between two input channels with pre-
programmed parameter sets.
The circuit has been optimised for the application in battery management
systems in automotive systems. As a front end data acquisition system it
allows an high quality measurement of current, voltage and temperature
of the battery.
With a high quality 100 !" resistor the system can handle the starter
current of up to 1500 A, a continuous current of # 300 A as well as the
very low idle current of a few mA in the standby mode.
For external temperature measurement the chip can use a wide variety of
different temperature sensors such as RTD, PTC, NTC, thermocouples or
even diodes or transistors. A built-in programmable current source can be
switched to any input and activate these sensors without the need of
other external components.
The measurement of the chip temperature with the integrated internal
temperature sensor allows in addition the temperature compensation of
sensitive parameters which increases the total accuracy considerably.
Sensor specific data can be stored in the internal Zener-Zap memory and
are used to calibrate each measurement in the internal data processing
unit before transmission to the external µC via the serial SDI interface.
The flexibility of the system is further increased by a digital comparator
that can be assigned to any measured property
(current, voltage, temperature) and an active wake-up in the sleep-mode.
All analog input-terminals can be checked for wire break via the SDI-
interface.
INTERNAL TEMPERATURE
INPUT MUX
CHOPPER
PROTECTION
CURRENT
SOURCES
ETR
ETS
RSHH
RSHL
VBAT 16 BIT - CONVERTER
BUF
SERIAL INTERFACE / CONTROL REGISTERS
DSP
CONTROLLER
FILTER
INT. CLOCK
TIMER
CALIBRATION
DATA
COMPARATOR
1.26 V
REFERENCE
SCLK SDAT INTN
REF AGND VDDA VSSA
VDDD
VSSD
CLK
EZPRG
PGA
and
LEVEL SHIFT
AS8501 Data Sheet
High precision voltage and current measurement sensor interface
Figure 1: Functional Block Diagram
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CONTENTS
1 FEATURES ........................................................................................................................................................................................ 1
2 APPLICATIONS................................................................................................................................................................................. 1
3 GENERAL DESCRIPTION ................................................................................................................................................................ 1
4 PIN FUNCTION DESCRIPTION FOR SOIC 16 PACKAGE.............................................................................................................. 3
5 ABSOLUTE MAXIMUM RATINGS.................................................................................................................................................... 4
6 ELECTRICAL CHARACTERISTICS ................................................................................................................................................. 5
7 FUNCTIONAL DESCRIPTION .......................................................................................................................................................... 9
7.1 POWER ON RESET........................................................................................................................................................................... 9
7.2 ANALOG PART, GENERAL DESCRIPTION ............................................................................................................................................ 9
7.2.1 Reference voltage ............................................................................................................................................................ 10
7.2.2 Current sources................................................................................................................................................................ 11
7.2.3 Internal temperature sensor ............................................................................................................................................. 12
7.3 DIGITAL PART................................................................................................................................................................................ 12
7.3.1 Sampling rate ................................................................................................................................................................... 12
7.3.2 Calibration ........................................................................................................................................................................ 13
7.4 MODES OF OPERATION .................................................................................................................................................................. 13
7.5 REGISTER DESCRIPTION ................................................................................................................................................................ 15
7.5.1 OPM operation mode register ( 4 bits ) ............................................................................................................................ 16
7.5.2 CRG general configuration register ( 28 bits ) .................................................................................................................. 16
7.5.3 CRA measurement channel A configuration register ( 17 bits ) ..................................................................................... 17
7.5.4 CRB measurement channel B configuration register ( 17 bits ) ...................................................................................... 19
7.5.5 ZZR Zener-Zap register (188 bits ).................................................................................................................................. 20
7.5.6 CAR calibration register ( 110 bits )................................................................................................................................. 22
7.5.7 TRR trimming register ( 20 bits ) ...................................................................................................................................... 22
7.5.8 THR alarm (Wake-up) threshold register ( 17 bits )......................................................................................................... 25
7.5.9 MSR measurement result register ( 18 bits )................................................................................................................... 25
8 DIGITAL INTERFACE DESCRIPTION............................................................................................................................................ 25
8.1 CLK ............................................................................................................................................................................................. 25
8.2 INTN............................................................................................................................................................................................ 25
8.3 SDI BUS OPERATION...................................................................................................................................................................... 26
8.4 DATA TRANSFERS.......................................................................................................................................................................... 27
8.5 SDI BUS TIMING............................................................................................................................................................................. 28
8.6 SDI ACCESS TO OTP MEMORY....................................................................................................................................................... 29
8.6.1 ZZR register bit mapping.................................................................................................................................................. 29
8.6.2 Stored ZZR-register mapping........................................................................................................................................... 33
9 GENERAL APPLICATION HINTS................................................................................................................................................... 34
9.1 GROUND CONNECTION, ANALOG COMMON....................................................................................................................................... 34
9.2 THERMAL EMF.............................................................................................................................................................................. 34
9.3 NOISE CONSIDERATIONS ................................................................................................................................................................ 35
9.4 SHIELDING, GUARDING................................................................................................................................................................... 35
10 TYPICAL PERFORMANCE CHARACTERISTICS.......................................................................................................................... 36
11 PACKAGE DIMENSIONS................................................................................................................................................................ 38
12 REVISION HISTORY ....................................................................................................................................................................... 38
13 ORDERING INFORMATION............................................................................................................................................................ 38
14 CONTACT........................................................................................................................................................................................ 39
14.1 HEADQUARTERS ...................................................................................................................................................................... 39
14.2 SALES OFFICES ....................................................................................................................................................................... 39
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4 PIN function description for SOIC 16 package
PIN Name description Comment
1 RSHL anlalog input from shunt resistor low side
analog common for VBAT, ETS and ETR; return for internal
current source
2 RSHH anlalog input from shunt resistor high side
3 ETS analog input with reference to RSHL
analog input for differential input ETS-VBAT
analog output for current-source
4 VBAT analog input with reference to RSHL
analog input for differential input ETS-VBAT
analog output for current-source
5 VSS 0V-power supply for analog part
6 EZPRG digital power input for programming Zener fuses.
This input must be open or connected to VDDD. It is not intended,
that OTP content is modified by the user.
7 VSSD 0V-power supply and ground reference point for digital part
8 CLK digital input for external clock, master clock input
external clock typical 8.192 MHz; during MWU-mode external
connection must be high impedance or connected to VDDD to
reduce current consumption
9 SCLK serial port clock input for SDI-port the user must provide a serial clock on this input
10 SDAT serial data in- and output
11 INTN Digital I/O for interrupt from comparator signal wake-up to external µ C
conversion ready flag for external interupt and synchronisation in normal mode
12 VDDD + 5V digital power supply
13 VDDA + 5V analog power supply
14 REF reference input/output must be connected to VSS with a 30 nF capacitor
15 AGND analog ground, ground reference for ADC
this PIN must be connected with a 50-100nF-capacitor to VSS;
no direct connection to VSSD/VSS allowed
16 ETR analog input with reference to RSHL
analog output for current-source
Table 1: Pin Description
Figure 2: Schematic Package outline SOIC 16
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5 Absolute Maximum Ratings
Stress beyond those listed under “Absolute Maximum Ratings“ may cause permanent damage to the device. These are stress ratings only. Functional
operation of the device at these or any other conditions beyond those indicated under “Operating Conditions” is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability. All voltages are defined with respect to VSS and VSSD. Positive currents
flow into the IC.
Absolute maximum ratings (TA = -40°C to 125°C unless otherwise specified)
Nr. PARAMETER SYMBOL MIN TYP MAX UNIT NOTE
0 Supply voltage
Analogue VDDA and digital VDDD
VDD
-0.3 7.0 V Polarity inversion externally
protected
1 Input pin voltage Vin -0.3 VDD +0.3 V
2 Input current
(latch-up immunity)
ISCR -100 100 mA JEDEC 17
3 Electrostatic discharge ESD -2 2 kV 1)
4 Ambient temperature TA -40 125
OC (Tj = 150°C)
5 Storage temperature TSTRG -55 150
OC
6 Soldering conditions TLEAD 260 °C 2)
7 Humidity, non-condensing 5 85 %
8 Thermal resistance RthJA 75 K/W
9 Power dissipation PTOT 350 mW
Notes:
1) MIL 883 E method 3015, HBM: R =1.5 k", C =100pF.
2) Jedec Std – 020C, lead free
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6 Electrical characteristics
VDDA=5V +/-0.1 V, fclk=8.192 MHz, chopping ratio MM=4 (see 7.5.3), oversampling frequency=2.048 MHz, oversampling ratio=128
temperature range : -40 to 125°C if not otherwise noted
symbol parameter conditions min typ max units
input characteristics
G1
for gain 1 the input signal is connected directly to th input of the converter, this is not possible for the RSHH-RSHL
input
Gain gains of PGA 6, 24, 50, 100 1)
AC_g6 Accuracy at gain 6 0 to 85 °C 1.0 % @-120mV 2)
-40 to 125°C 1.5 % @-120mV 3),4)
AC_g24 Accuracy at gain 24 0 to 85 °C 0.5 0.08 % @+-20mV 2)
-40 to 125°C 1.5 0.3 % @+-20mV 3) 4)
AC_g50 Accuracy at gain 50 0 to 85 °C 1.0 % @+-10mV 4)
AC_g100 Accuracy at gain 100 0 to 85 °C 1.0 % @+-5mV 4)
Vin input voltage ranges G1 -350 -300 to + 800 900 mV 5) 6)
(with reference to RSHL) G6 -200 +/- 120 160 mV 5) 7)
G24 -40 +/- 30 40 mV 5) 7)
G50 -20 +/- 15 20 mV 5) 8)
G100 -10 +/- 7.5 10 mV 5) 8)
Notes:
1) the absolute gain values are subjected to a manufacturing spread of +/-30% max in the full temperature range. all gain values can be digitally
calibrated together with the external circuitry with a resolution better than 0.065%
2) Current measurement paths for G6 and G24 are trimmed for minimum Temperature coefficient. The trimm algorithm is based on a 2 temperature
measurement at 23°C and 60°C.
Accuracy is mainly determined by bandgap characteristic and gain variation over temperature.
A TC shift of typically -15 ppm/K will occure during solder process which is compensated by a systematic offset during trimming.
3) due to a nonlinear behaviour of the gain and reference voltage over temperature the accuracy is lower for the extended temperature range.
4) The minimum limits for G50, G100 are derived from device characterization and not tested. Towards 125°C the TC values are higher.
therefore it is recommended to use these gain settings only for applications in the temperature range 0 to 85°C.
5) if not otherwise specified the ranges are calibrated to the typical values. The maximum and minimum value represent the maximum usable span
accepting linearity deviation up to 1000 digits. Min, max limits are tested at room temperature only!
6) this gain range is not using the internal PGA, the input is directely connected to the AD-converter. Therefore the input resistance is lower then for
other gain ranges.
It has been designed mainly for positive input voltages up to 0.8 V i.e. for measurements of temperature with transistors and diodes.
The limitation for negative input voltages is due to the onset of conduction of the input protection diodes.
7) the ASSP is optimised for G6 and G24 concerning linearity, speed and TC, therefore these ranges are recommended whenever possible.
8) because of higher TC value at elevated temperature G50 and G100 are recommended for applications in the temperature range 0 to 85°C
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Electrical characteristics (continued)
VDDA=5V +/-0.1 V, fclk=8.192 MHz, chopping ratio MM=4 (see 7.5.3), oversampling frequency=2.048 MHz, oversampling ratio=128
temperature range : -40 to 125°C if not otherwise noted
symbol parameter conditions min typ max units
cal_err
calibration error
for 30 000 digits output at
full range
G1, 720 mV
G6, 120 mV
G24, 30 mV
G50, 15 mV
G100, 7.5 mV
0.1
0.2
%
1)
lin_err nonlinearity gain 6 @ room temp 0.1 0.3 % or 30 digits 2)
gain 24 @ room temp 0.03 0.05 % or 10 digits 2)
gain 50 @ room temp 0.05 0.07 % or 15 digits 2)
gain 100 @ room temp 0.05 0.1 % or 20 digits 2)
lin_errTC TC of linearity error all gains 1 5 ppm/K 3)
Vos
offset voltage:
RSHH_RSHL -40 to 125°C -0.5 0.2 0.5 µ V 4)
offset voltage: ETS, ETR,
VBAT -40 to 85°C -2 0.5 1 µV
4)
85 to 125°C -4 1 2 µV 4)
dVos/dT
Offset voltage drift: RSHH-
RSHL -40 to 85 °C 0.002 µV/K
Ib
input bias/leakage current,
all channels room temperature -1 0.2 1 nA 5)
Vndin
voltage noise density
(G=24) f=0 to 1 kHz 35 50 nV//Hz 6)
Indin
current noise density
(G=24) f=10 Hz 5 20 100 fA//Hz
6)
en p_p voltage noise, peak (G=24) 0 to 100 Hz 2 3 5 µ V 6)
0 to 10 Hz 0.5 1 1.5 µV 6)
en_RMS voltage noise, RMS (G=24) 1000 Hz 1.5 2 µV
SNR
signal to noise (G=24,
G4.8) room temperature 90 100 dBmin
SDR
signal to distortion (G24,
G4.8) room temperature 80 100 dBmin
CCI chanel to chanel insulation room temperature -70 -90 dBmax
PSRR power supply rejection ratio 4.9 to 5.1 V -50 -60 dBmax
Notes:
1) at room temperature / corresponding calibration factors are stored within the ZZR-register
2) whatever is lower. Maximum limits for gains 50 and 100 are derived from device characterization and are not tested.
3) this value measured in raw mode at room temperature and at 60°C. Maximum limits over temperature range are derived from device characterization.
4) TC variations are included in the above given maximum limit of linearity error. Max value is derived from device characterization and not tested
5) Leakage current is specified for all gain settings (except G1) for positive input voltages below 200 mV. Test is done at different input voltages with
subsequent extrapolation for 200mV. In the temperature range 85-125°C it may be as high as 5 nA at the upper limit. In normal operation a
temperature independent digital offset of -0.7 digits is present due to internal rounding.
6) This parameter is not measured directly. It is measured indirectly via gain measurement of the whole path at room temperature
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Electrical characteristics (continued)
VDDA=5V +/-0.1 V, fclk=8.192 MHz, chopping ratio MM=4 (see 7.5.3), oversampling frequency=2.048 MHz, oversampling ratio=128
temperature range : -40 to 125°C if not otherwise noted
symbol parameter conditions min typ max units
data conversion
RES resolution all channels 16 bits 1) 2)
Vref reference voltage room temperature 1.13 1.21 1.30 V 3)
Vref_TC temperature coefficient of Vref -50 50 ppm/K 4)
Vref_Ri internal resistance of Vref Rload > 50 kOhm 200 Ohm
fovs clock frequency 4.096 MHz
R1 oversamplig ratio 64 128
MM conversions during chopper cycle 4 8
BW bandwidth 7.8 1000 16000 Hz
av internal averaging 1 4 1024 cycles
fclk external clock frequency 0.05 8.192 10 MHz 5)
CLK_extdiv clock division factor 2 4
DR_clk duty ratio of external clock 50 %
int_fclk internal clock frequency 180 250 330 kHz
analog inputs RSHH, VBAT, ETS, ETS
Rin input resistance Ue < 150 mV 50 100 MOhm
Cin input capacitance at gain 24 8 15 30 pF
internal temperature sensor
T_out20 output at 23°C G 6, typical 22500 23 000 23500 digits 6)
T_sl slope -20 to 100°C 73 75 77 digits/degC
7)
Terr85 error of temperature measurement 0 to 85°C 0.5 2 degC 7)
Terr125 -40 to 125°C 1 3 degC 7)
current source output to RSHH, RSHL
Icurr_rshh 1.5 2 3 µ A
Notes:
1) with external averaging the resolution can be increased up to 21 bits with an effective sampling rate below 10 Hz
2) the system works in overflow condition without degradation of accuracy up to 1.4 * range width.
This means that the overflow bit can work as bit no.17 in this range.
3) the absolute value will be trimmed digitally to (1.28*/-0.01) V at 23°C, if not otherwise specified
4) the TC-value will be trimmed digitally to end up with a typical TC-value of the output ( total measurement path) at G24 better than 20 ppm/K the
TC- value of the
reference voltage after trimming may be typically as high as 50 ppm/K due to manufacturing spread. Min,max limits are not tested but derived
from device
characterization
5) in the temperature range 0 - 85°C the clock frequency can be increased to 12 MHz
6) value trimmed to +/- 30 digits during final test and stored into ZZR
7)The slope of the sensor is measured on sample basis per lot and not tested per device. The specified limits are derived from device
characterization.
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Electrical characteristics (continued)
VDDA=5V +/-0.1 V, fclk=8.192 MHz, chopping ratio MM=4 (see 7.5.3), oversampling frequency=2.048 MHz, oversampling ratio=128
temperature range : -40 to 125°C if not otherwise noted
symbol parameter conditions min typ max units
programmable current source output to Vbat, ETS, or ETR
Icurr_ON current level 0 248 µA
I_steps current steps 6 8 10 µA
Dcurr accuracy, room temperature 248 µA 0.2 0.5 %
TC_CS temperature coefficient 830 900 1000 ppm/K 1 )
Icurr_OFF current when off room temperature 0.001 0.01 µ A
Icurr_Ri internal resistance of current source Ua < 2 V 10 MOhm
digital CMOS inputs with pull up and schmidt-trigger input PINs CLK and SCLK
Vih high level input voltage VDDD=5V 3.5 V
Vil low level input voltage VDDD=5V 1.5 V
Iih current level VDDD=5V, Vih=5V -1 1 µ A
Iil current level VDDD=5V, Vil=0 30 120 µ A
digital CMOS outputs output PINs SDAT and INTN
Voh high level output voltage VDDD=5V, -633uA 4.5 V
Vol low level output voltage VDDD=5V, 564uA 0.4 V
Cl capacitive load 20 pF
Tristate digital I/O
Voh high level output voltage VDDD=5V, -633uA 4.5 V
Vol low level output voltage VDDD=5V, 564uA 0.4 V
Ioz
tristate leakage current to
VDDD,VSSD VDDD=5V -1 1 µ A
Vih high level input voltage VDDD=5V 3.5 V
Vil low level input voltage VDDD=5V 1.5 V
EZPRG input
Vprg
programming voltage - for factory
programming only VDDD=5V - - - V 2)
supply current
Isup normal operation VDDD=VDDA=5V 3 5 mA
Iaw active wake-up VDDD=VDDA=5V 40 100 µA 3)
supply voltage
VDDA positive analog supply voltage 4.7 5.0 5.3 V 4)
VDDD positive digital supply voltage 4.5 5.0 5.5 V
VSS, VSSD negative supply voltage 0 V
Power On Reset
Vporhi Power on reset Hi 2.5 4.1 V 5)
Vhyst Hysteresis 0.1 0.3 V 5)
Notes:
1) not tested, derived from device characterization
2) for factory calibration only. During normal operation this PIN must be connected to VDDD.
3) the average current is dependent on the on-time of the measurement system i.e. it can be programed via the CRA register
4) stability of analog supply should be within +/- 0.1 V
5) tested at room temperature only
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7 Functional Description
7.1 Power on Reset
The power on reset is iniciated during each power up of the ASSP and can be triggered purpously by reducing the analog supply voltage (VDDA) to a
value lower than Vporlo for a time interval longer than 0.5 µsec.
During power on reset sequence the following steps are performed automatically:
- The chip goes to mode MZL (see 7.4)
- Internal clock is enabled
- The calibration constants are loaded from Zener-zap memory to the appropriate registers (ZTR=>TRR, ZCL=>CAR). The load procedure is
directed by the internal clock and can be monitored on INTN pin. 188 clock pulses are generated from the internal oscillator source. Pulse period
is equal to internal clock period.
After the power-on reset sequence is finished:
- the operation continues with internal clock if no external clock is detected. In this case the ASSPs switches to mode MWU with default value of
threshold register ( 214 )
- If external clock is available the ASSP switches to mode current measurement MMS (default measurement with default configuration: gain=100,
fovs=4.096MHz, R1=64, MM=4, R2=1, NTH=214).
- The microcontroller can communicate via SDI interface whenever appropriate, i.e. CAR and TRR register can be rewritten from the µC if
necessary.
- Because the automatic selected calibration factor (CGI4) is loaded with zeros, the ASSP delivers constant zero at the output to allow the µ C to
check for an unwanted POR. To bring the ASSP back into normal operation for current
measurement with gain100 the µ C has to copy the CAU4 content into the CGI4 factor in the CAR-register.
(see also 7.5.5 and 8.6.2)
7.2 Analog part, general description
The input signals are level shifted to AGND (+ 2.5 V) then switched by the special high quality MUX- which contains also the chopper – to the input of
the programmable gain amplifier (PGA). This low noise amplifier is optimised for best linearity, TC- value and speed at gain 24.
The systems contains an internal bandgap reference with high stability, low noise and low TC-value. The output of a programmable current source can
be switched to the analog inputs VBAT, ETS and ETR for testing the sensor connections
or for external activation of resistors, bridges or sensors (RTD, NTC). The voltage drop generated by the current is measured at the corresponding
input/output PIN.
For the wire break test of the RSHH and RSHL inputs special low noise current sources are implemented.
The integrated temperature sensor can also be switched to the PGA by the MUX and measured any time. The chip temperature can be used for the
temperature compensation of
the gain of the different channels in the external µC, which increases the absolute accuracy considerably.
The offset of the amplifier itself is already fairly low, but to guarantee the full dynamic range it can be trimmed via the digital interface to nearly zero
independent of the autozero chopping function.
In the same way the manufacturing spread of the absolute value of the reference voltage can be eliminated and the TC-value set to nearly zero by a
trimming process via the SDI interface.
For more details of the input multiplexer see the following schematic. The position of all switches is defined by writing into the registers CRA, CRB and
CRG via the SDI bus, which is explained in 7.5.2 through 7.5.4.
INTERNAL
TEMPERA-
TURE
AD-
CON-
VERTER
PGA
AUXILIARY
CURRENT
SOURCE
M 12
M 13
M 3
M 10
M 14
CURRENT
SOURCE
M 2
M 1
M 4
M 15
M 8
M 7
M 9
M 6
ETR
ETS
VBAT
RSHH
RSHL
M 5
Figure 3: Multiplexer
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7.2.1 Reference voltage
The ASSP contains a highly sophisticated precision reference voltage. Its typical temperature dependence is a slight parabola shaped curve and is
shown in figure 21. This reference voltage is used mainly for the internal AD-converter, but can also be used for external purposes if the impedance of
the external circuitry is high enough.
The absolute value and its temperature coefficient (TC) is given by the content of the TRR register. This opens the possibility to calibrate the reference
voltage to the optimum absolute value (i.e. 1.28 V) and the TC value to zero thus eliminating fully the production spread.
Writing into subregister TRIMBV of TRR changes the absolute value linearly by 5.1 mV per digit as shown in the following graph and described in full
detail in 7.5.7
Trimming the TC value is similarly done by writing into subregister TRIMBTC. Since the TC trimming is also changing the absolute value it is important
to trim the TC first and then the absolute value.
1,16
1,20
1,24
1,28
1,32
1,36
0 5 10 15 20 25 30
content of TRIMBV in bits
reference voltage in V
75 °C 24 °C
1,12
1,14
1,16
1,18
1,20
1,22
1,24
1,26
10 30 50 70 90 110
resistance load in kOhm
reference voltage in V
measurement open loop value
Figure 4: Reference voltage as function of resistance load
Figure 5: Reference voltage as function of temperature
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-250
-200
-150
-100
-50
0
50
100
150
200
0 5 10 15 20 25 30 35
setting of subregister TRIMBTC of TRR
temperature coefficient in ppm/K
change 12.7 ppm/K
per step
The TC trimming also opens the unique possibility to change the TC-value within the time of reprogramming of the TRR-register (i.e. within µsec) to
allow the compensation of
different TC-values of the external circuitry for different channels.
In addition it can be used for very fast autocalibration of the total TC of a given channel. An external reference voltage is applied to the channel to be
checked. Then all numbers from 0 to 31 are written into subregister TRIMBTC and a reading is done for the input voltage and the internal temperature
as well. The same is repeated at any temperature above RT. From these data the TRIMBTC setting for a minimum drift can be easily calculated.
7.2.2 Current sources
The AS8501 contains several current sources which can be used for checking all input lines for wire brake, to control external circuitry or to activate
external sensors.
Main current source
The main current source can be digitally controlled via the content of the CRG register in 31 steps of 8 µ A in the range of 0 to 248 µA. Its absolute
value can be calibrated by writing in the subregister TRIMC of TRR.
The current source can be switched to the inputs VBAT, ETR or ETS to activate external sensors like RTDs, NTCs or resistance briges and strain
gages. It can also be used to detect a wire breake of external connected sensors. Performing a measurement with a high and a low (or zero) current
opens the possiblity to eliminate thermal EMF voltages in external sensors.
Secondary current sources
The ASSP contains two other high quality current sources supplying a current of approx. A at the inputs RSHL and RSHH. These current sources
can be switched on and off at any time to check the correct connection of both terminals. During off state they must not interfere with the high sensitive
voltage inputs, especially the noise level should not be increased. If one of the terminals is an open connection the amplifier goes into saturation and
the overflow bit is set.
Figure 6: Temperature coefficient as function of TRIMBTC setting
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7.2.3 Internal temperature sensor
The ASSP contains a high sensitive precision temperature sensor which can be used at any time. The sensor supplies a very linear voltage signal with
an offset at 23 degC, which is calibrated and stored in the ZZR-register. The voltage can be measured using the internal circuitry with gain 6, with free
selection of all other parameters defining the sampling rate.
The slope of the curve is approx. 75 digits per degC.
The calculation of the temperature has to be done in the external µ C acc. to the following simple formula:
Tint=( Uint(T)-Uint(23) ) / 75 + 23°C
Uint(T) is the measured result and Uint(23) is the reference value at 23°C, which is stored as an 11 bit-word in the ZZR-register.
Bits 15, 14 ,13 and 12 will always be the same at room temperature (0101 bin or 20480 dec), therefore it makes no sense to store them for each single
part. In addition we dont need the high resolution of one digit, which means 1/71.3 = 14 milli Kelvin. Therefore we cut the last bit and achieve a word of
11 bit length, which finally is stored in the ZZR-register as shown in the ‚stored ZZR-register mapping‘ given in 8.6.2
Example:
value stored in the ZZR-register:
1060 dez or 10000100100 bin
Uint(23) = 0101 10000100100 0 = 22600 dec
Add register content Add
If your measured value is : Uint(T) = 23767 dec
Ti[°C]= ((23767-22600) / (75 digits / °C)) + 23 °C
= 15.6 °C + 23 °C = 38.6 °C
7.3 Digital part
In the digital part the result of the AD-converter is processed, i.e. calibration, active offset cancellation and filtering is done. In addition the
communication via the serial SDI interface is handled and all circuit functions (like voltage and current path settings, chopping, dechopping) are
controlled.
Whenever the power supply line returns from below 2.0 V to above 3.5 V a power-up circuitry is activated which loads the internal calibration registers
from the Zener-Zap memory into the working register and starts the chip in a special default mode.
7.3.1 Sampling rate
the sampling rate (SR) is defined by the setting of parameters in register CRA or CRB. The oversampling frequency (OSF), the oversampling ratio
(OSR), the chopping ratio (MM) and the averaging number (AV). The sampling rate can be calculated acc. to the following formula:
SR= OSF/(OSR*MM*AV)
Figure 7: Measurement of internal temperature sensor over oil bath temperature
15000
20000
25000
30000
35000
-50 -25 0 25 50 75 100 125 150 175
Temperature in deg C
Internal temperature in digits
-100
-75
-50
-25
0
25
50
75
100
inearity deviation in digits
output signal linearity deviation cubic fit
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For an clock frequency of 8.192 MHz it can vary between
16 000 kHz and 1.95 Hz.
In the dual mode the ASSP is switching automatically between the two channels and it needs at least one measurement for each polarity to get a valid
measurement. In addition the ASSP needs some time to reprogram the internal registers and switches. Therefore the maximum sampling frequency is
limited to 7.5 kHz for the above given clock frequency. The internal averaging is not working in the dual mode, but the sampling frequency can be
different for each channel.
7.3.2 Calibration
The calibration of the ASSP is done by a test setup as follows:
- room temperature calibration of the internal temperature sensor
- absolute input-output calibration for all gain settings
- TC calibration for the measurement path for gain 24
The absolute input-output calibration of the gain ranges is done that way that for a given input voltage 30 000 digits at the output are produced:
Table 7.2.2
In addition the ASSP receives an individual 24-bit serial number.
The TC-value of the output (total measurement path) for G24 is trimmed to a minimum value by selecting the best setting of the TRIMBTC subregister
of the TRR register (see 7.5.7).
A similar calibration is done for the other subregisters TRIMBV, TRIMA and TRIMC for the absolute value of the reference voltage, the offset of the PGA
and the current source respectively.
All these data are stored in the ZZR register according to the ‚stored ZZR-register mapping‘ given in 8.6.2
7.4 Modes of operation
The AS8501 can run in different operation modes, which are selected and activated via the serial interface.
Detailed description:
Mode 0: MZL
In power-on reset sequence, which is initiated by the on-chip power-on reset circuit whenever the power is connected , the registers are loaded from the
Zener-Zap memory.
Mode 1: MMS
Measurement mode where the definition is taken from the registers CRA and CRG defined later on. The measurements are continuous and measured
results are available after the ready flag (INTN pin) is set to LO. The result can be read by the µ C any time after this bit is set to LO. However, to obtain
the best noise performances the result should be read when INTN pin is at LO state. All modules are in power-up.
Mode 2: MMD
Dual channel measurement mode. Two consecutive different measurements are performed according to the settings in the configuration registers CRA,
CRB and CRG defined later (usually CRA defining current measurements and CRB voltage measurement). One complete measurement is performed
with each setting. CRG register holds common settings.
The measurements are continuous (A,B,A,B). The 17th bit in the output register defines, which measurement has been executed according to the
definition LO=A, HI=B.
The number of consecutive measurements with equal configuration is defined in register CRG (bits s3,s2,s1,s0). All modules are in power-up.
Mode 3: MWU
In this wake-up mode the internal clock finclk=256kHz is running and one complete measurement is performed in the period from 1 to 1.5 s with the
parameter settings of the CRA register. Before the actual measurement is performed the logic powers up all internal circuits especially the AGND and
the Vref. If the external load is higher than 70 kOhms both signals can be used for external triggering or even as interrupt for the µC.
If the external clock is not running, this input should be high impedance. To achieve a stable low idle current the oversampling ratio should be set to
R1=128 and the CFG register must be programmed to x00003, see also 7.5 ‘Register description’. It is assumed that the threshold level in the THR
register is defined within the 16 bit range, if not the default value is 210
After one measurement is finished all modules except the on- board oscillator and divider are switched into power down condition to save power. The
MSR register is updated with the last measurement result. Whenever this value exceeds the digital threshold the (wake-up) INTN pin goes LO for one
clock cycle to trigger the wake-up event in the external µ C.
gain input/mV output/digits
1720 30 000
6120 30 000
24 30 30 000
50 15 30 000
100 7.5 30 000
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After that the circuit returns in power-down for approximately 1s. During this time the last measurement (MSR register) is available on the SDI interface.
In this intermediate sleep-mode all modules except internal oscillator and divider are in power-down mode. The SDI interface works independent which
means that the measurement result is available by reading the MSR register. At any time the microprocessor can start any other mode via SDI. In such
a case the external clock must be switched on first.
The chip goes in MWU mode (mode 3) after it received the command for that. After that command 6 or more additional CLK pulses are needed before
external clock may go to power down mode (no CLK pulses, high level because of internal pull-up resistors). This 6 CLK pulses are needed for
synchronisation. On the way back to normal mode this restriction is not needed.
Mode 4: MAM
In this alarm mode the measurement defined in CRA is going on. The channel bit in the THR register must be cleared (channel A). The threshold value
may be positive or negative. Whenever the measured value exceeds the digital threshold value in the THR register the pin INTN (in this mode its
function is to signal alarm-condition) goes LO for one clock cycle. For negative threshold value the signed measurement result must be more negative
than the THR value to activate the alarm. During measurements the signal INTN is high. All modules are in power-up, measurements are continuously
going on.
Mode 5: MZP
Zener-Zap programming/reading. This mode for factory programming only and should not be used by the customer.
Mode 6: MPD
Power down mode. Individual analog blocks can be disabled/enabled. The data acquisition system is not running during this mode is activated.
Mode 7: MSI
The operation in this mode is exactly the same as in MMS mode except that the internal clock is used.
The SDI interface signals can become active whenever appropriate. This mode can be used if no external clock CLK is available. The measuring speed
is reduced by a factor of 16.
Modes 8-15: These modes are reserved for testing purposes and should not be used by the customer. Reading and writing of some registers is only
possible in these higher modes. Write to registers CAR (calibration register) and TRR (trimming register) is allowed only in test modes.
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Modes of operation, register OPM
Mode Name Description mo3 mo2 mo1 mo0
0 MZL Power on, loading from Zener-Zap
memory
0 0 0 0
1 MMS Single measurement 0 0 0 1
2 MMD Double measurement
(A,B,A,B …)
0 0 1 0
3 MWU Wake-up 0 0 1 1
4 MAM Alarm 0 1 0 0
5 MZP Zener program/read 0 1 0 1
6 MPD Power down 0 1 1 0
7 MSI 0 1 1 1
8-15 Reserved for testing 1) 1 x x x
Notes:
1) Register addresses 12, 13, 14 and 15 are reserved for testing and future options; operations on these
registers must be avoided
7.5 Register description
In the following sections the register contents and their functions are described in detail. Since the length of some
registers is too long to present clearly, the registers are logically subdivided according to their functions and described
separately.
All internal functions are controlled by the contents of these registers which can be reloaded via the serial SDI interface at
any time. The AS8501 contains the following registers:
REGISTER ADDRESS SIZE
Contents Detailled description see
OPM 0 4 Operating mode register 7.5.1
CRA 1 17 Measurement A configuration register 7.5.3
CRB 2 17 Measurement B configuration register 7.5.4
CRG 3 28 General configuration register 7.5.2
MSR 4 18 Measurement result register 7.5.9
ZZR 5 188 Zener-Zap register 7.5.5
CAR 6 110 Calibration register 7.5.6
TRR 7 20 Trimming register 7.5.7
THR 8 17 Alarm or wake-up threshold register 7.5.8
CFG 9 20 Test and special configuration register 1)
reserved 10-12 Test registers
Note: 1) This register is reserved for testing modes. Writing is possible only in mode 8. In order to assure
stable conditions in power-down modes MWU(3), MPD(6), TMSS(8) and MSI(13) the default
setting of the CFG register must be changed to x00003. It is not necessary to change this value
during normal operation.
Write commands not supported in a certain mode can be released immediately after the register address. The ASSP will
resume operation with the next start condition. Registers CAR and TRR are not buffered. Any read operation of the CAR
or TRR register may generate transients in the analog circuitry; further accurate measurements require a delay time for
settling.
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7.5.1 OPM operation mode register ( 4 bits )
no. Bit mo3 mo2 mo1 mo0 Note
0 default 0 0 0 0
1)
1) This register has been described in detail under 7.4
7.5.2 CRG general configuration register ( 28 bits )
no. CRG bits 27-22 21-11 10-7 6-0 NOTE
0 CRS CRI CRV CRP
subregister CRS: Sequence length, dechop and chop ( 6 bits )
Nr. Bits 5 4 3 2 1 0 NOTE
0 CRS bit
names
s3 s2 s1 s0 d c
1)
1 Default 0 0 0 1 1 1
2)
Notes:
1) This register defines the sequence length, chopping (c) and dechopping (d) of the input signal
2) Default power-up state before any setting
Sequence length bits ( 4bits)
Nr. No. of measurements s3 s2 s1 s0 NOTE
0 16 0 0 0 0
1)
1 1 0 0 0 1 default
… … … …
14 14 1 1 1 0
15 15 1 1 1 1
Notes:
1)Number of consecutive measurements of A and B with settings defined in CRA,CRB
and other settings in CRG register. This setting is used only for mode MMD.
DECHOPPING BIT
Nr. Dechopping d NOTE
0 No dechopping 0
1 Dechopping 1
CHOPPING BIT
Nr. Chopping c NOTE
0 No chopping 0
1 chopping 1
subregister CRI: Current configuration ( 11 bits )
Nr. Bits 10 9 8 7 6 5 4 3 2 1 0 NOTE
0 CRI bit
names
M14 M13 M12 M11 M8 M6 i4 i3 I2 i1 i0
1),3)
1 Default 0 0 0 0 0 0 0 0 0 0 0
2)
2 output VBAT RSHL RSHH no ETS ETR
Notes:
1) whenever M1=1 in (CRA,CRB) it is good practice to set all M6 to M14 to zero, but it is not mandatory
2) default logic state after power up and before any setting
3) All bits with names M14 to M1 represent control signals of the multiplexer with positive logic (for example M14=1
means that corresponding switch is closed).
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Current source setting bits (5 bits)
Nr. Current [uA] i4 i3 i2 i1 i0 NOTE
0 0 0 0 0 0 0
1 8 0 0 0 0 1
2 16 0 0 0 1 0
3 24 0 0 0 1 1
4 32 0 0 1 0 0
… … … …
31 248 1 1 1 1 1
subregister CRV: Voltage configuration (4 bits )
Nr. Bits 3 2 1 0 NOTE
0 CRV bit
names
M15 M10 M9 M7
1),3)
1 Defaults 0 0 0 0
2)
2 channel VBAT-
RSHL
VBAT-ETS
differential
ETS-RSHL ETR-
RSHL
Notes:
1) This register defines the connection of the analog voltage- bus to the input-PINs and to the A/D converter
2) Default logic state after power-up and before any setting
subregister CRP: Power down configuration ( 7 bits )
Nr. Bits p6 p5 p4 p3 p2 p1 p0 NOTE
0 CRP bit
names
pdosc pda pdm pdb pdc pdi pdg
1),3)
1 Defaults 0 0 0 0 1 0 0
2)
2 block oscillator amplifier modu-
lator
ref. bias current
source
internal
temp.
analog
GND
Notes:
1) This register defines the power-down signals of the building blocks
2) Default power-up state before any setting
3) The logic is positive (pdosc=1 means the corresponding block is in power-down)
7.5.3 CRA measurement channel A configuration register ( 17 bits )
Nr. Bits 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 NOTE
0 CRA bit
names
cu2 cu1 cu0 M5 M4 M3 M2 M1 g1 g0 f r mm n3 n2 n1 n0 1), 3)
1 Defaults 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 0 0
2)
2 subreg. CRU CRM GN OSF OSR MM CRN
Notes:
1) This register defines the measurement channel A configuration
2) Default power-up state before any setting
3) Bit M1 is control signal of the multiplexer for current input
(for example M1=1 means that corresponding switch is closed).
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subregister CRU: calibration constant selection for voltage path ( 3 bits) in registers CRA,CRB
Nr. Calibration const. U cu2 cu1 cu0 NOTE
0 CAU0 0 0 0
1 CAU1 0 0 1
2 CAU2 0 1 0
3 CAU3 0 1 1
4 CAU4 1 0 0
5 CAU5 1 0 1
6 1548 1 1 0
7 1548 1 1 1
subregister CRM: measurement path for registers CRA,CRB
Nr. Bits 13 12 11 10 9 NOTE
CRA bit
names
M5 M4 M3 M2 M1 1), 2)
1 Defaults 0 0 0 0 1
measurement RSHH-RSHL
2 0 1 0 0 0
voltage bus
3 0 1 0 1 0
voltage bus, internal temperature
4 0 1 1 0 0
voltage bus, reference low=RSHL
5 1 0 0 0 0
voltage bus, gain=1
6 1 0 0 1 0
voltage bus,gain=1, internal temperature
7 1 0 1 0 0
voltage bus, gain=1, reference low=RSHL
Notes:
1) these bits define the inner part of the voltage path settings
2) only the listed combinations are allowed
subregister GN: gain definition bits, Registers CRA,CRB
Nr. GAIN g1 g0 NOTE
0 6 0 0
1 24 0 1
2 50 1 0
3 100 1 1
subregister OSF: oversampling frequency bit, Registers CRA,CRB
Nr. Fovs (fclk=8MHz) Fovs (internal osc) f NOTE
0 2.048MHz 132kHz 0
1)
1 4.096MHz 264kHz 1
1)
Notes:
1) For internal oscillator typical values
subregister OSR: oversampling ratio bit, Registers CRA, CRB
Nr. R1 r NOTE
0 64 0
1 128 1
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subregister MM: chopping ratio bit, Registers CRA, CRB
Nr. MM mm NOTE
0 4 0
1 8 1
2 1 x
1)
Notes:
1) For c=0 and d=0 , chopping and dechopping is switched off and every cycle is active regardless
of mm, i.e. the sampling frequenzy is higher by a factor of 4
subregister CRN: averaging bits ( 4 bits), registers CRA,CRB
Nr. R2 n3 n2 n1 n0 NOTE
0 1 0 0 0 0
1 2 0 0 0 1
2 4 0 0 1 0
3 8 0 0 1 1
4 16 0 1 0 0
5 32 0 1 0 1
6 64 0 1 1 0
7 128 0 1 1 1
8 256 1 0 0 0
9 512 1 0 0 1
10 1024 1 0 1 0
11-14 Reserved for test 1 x x x 1)
15 raw mode 1 1 1 1
2)
Note:
1) combinations from B to E are reserved for test
2) this mode delivers the AD-values without calibration and averaging but multiplied by a factor which is dependent on the
setting of the oversampling ratio. It can be used for high resolution measurements of very low signals since it eliminates
the internal rounding error.
The ratio between raw result (Nr) and normal result (Nn) is given by: Nr/Nn = 2^(11+x)/CAL where x=6 for R=128 and x=3
for R=64. CAL is the calibration constant used.
7.5.4 CRB measurement channel B configuration register ( 17 bits )
Nr. Bits 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 NOTE
0 CRB bit
names
cu2 cu1 cu0 M5 M4 M3 M2 M1 g1 g0 f r mm n3 n2 n1 n0
1), 3)
1 Defaults 0 0 0 0 1 1 0 0 0 1 1 0 0 0 0 0 0
2)
2 subreg. CRU CRM GN OSF OSR MM CRN
Notes:
1) This register defines the measurement channel B configuration, the functions of the subregisters are the same as
described above for measurement channel A
2) Default power-up state before any setting
3) In this mode the chip cannot measure the current sensing input RSHH-RSHL, therefore M1=0 for all settings
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7.5.5 ZZR Zener-Zap register (188 bits )
Nr. ZZR bits 183-187 163-182 53-162 0-52 NOTE
0 ZLO ZTR ZCL ZTC1) 2)
Notes:
1) 5 bits are reserved for: - 1 bit eventually destroyed during testing,
- 2 bits for testing programmed 0 and 1
- 2 bits reserved for locking
2) due to a limited driving capability of the ZZR-cells the maximum reading speed is limited to 500 kHz
subregister ZLO: Zener spare bits ( 5 bits )
Nr. Name SYMBOL WORD WIDTH Default Hex
1 Reserved bits ZLO 5 F
subregister ZTR: trimming bits (20 bits)
Nr. PARAMETER SYMBOL WORD
WIDTH
Default
Dec1)
UNIT NOTE
0 TC of reference TRIMBTC 5 0 Bits
1 absolute value of reference TRIMBV 5 0 Bits
2 amplifier offset TRIMA 5 0 Bits
3 current source for external
temperature
TRIMC 5 0 Bits
4 trim bits TRIMREG 20 Bits
Notes:
1) Default values must be written before start of the test
subregister ZCL: calibration bits ( 110 bits )
Nr. PARAMETER SYMBOL WORD
WIDTH
Default
Dec3)
UNIT NOTE
0 Calibration G=6, I CGI1 11 1548 Bits
1),4)
1 Calibration G=24, I CGI2 11 1548 Bits
1),4)
2 Calibration G=50, I CGI3 11 1548 Bits
1),4)
3 Calibration G=100, I CGI4 11 1548 Bits
1),4)
4 Calibration U0 CAU0 11 1548 Bits
1),4)
5 Calibration U1 CAU1 11 1548 Bits
1),4)
6 Calibration U2 CAU2 11 1548 Bits
1),4)
7 Calibration U3 CAU3 11 1548 Bits
1),4)
8 Calibration U4 CAU4 11 1548 Bits
1),4)
9 Calibration U5 CAU5 11 1548 Bits
2),4)
10 cal. Bits ZCL 110 Bits
Notes:
1) Decimal default value of the calibration constant for voltage and current is calculated
using formula: CGdef=Nmax/NADdef=(Vref*1024)/(Vin*Gmax)=1548
2) Default calibration constant for absolute value of the voltage proportional to absolute
temperature is the same as for any other range because it uses the same amplifier and
max voltage at max. temperature is approx. 150mV and the gain selected must be g0.
3) Default values must be written before start of the test
4) Calibration constants are selected dependent on state of M1 ( see table below). For M1=1 one of
CGI1 to CGI4 is selected according to selected gain of amplifier. For M1=0 the selection of the
calibration constants is defined by bits (cu2,cu1,cu0), which are part of CRA and CRB registers and
are defined via SDI interface independently of any other selection.
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Calibration constant selection truth table
Nr. cu2 cu1 cu0 M1 g1 g0 CAL CONST NOTE
0 x x x 1 0 0 CGI1 1)
1 x x x 1 0 1 CGI2 1)
2 x x x 1 1 0 CGI3 1)
3 x x x 1 1 1 CGI4 1)
4 0 0 0 0 x x CAU0 2)
5 0 0 1 0 x x CAU1 2)
6 0 1 0 0 x x CAU2 2)
7 0 1 1 0 x x CAU3 2)
8 1 0 0 0 x x CAU4 2)
9 1 0 1 0 x x CAU5 2)
10 1 1 0 0 x x 1548
11 1 1 1 0 x x 1548
Notes:
1) CGIx calibration constants are selected when M1=1 according to selected gain
2) CGUx calibration constants are selected when M1=0 according to bits cu2 to cu0 defined via SDI in CRA and/or CRB
registers.
Subregister ZTC: see register mapping 8.2.6
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7.5.6 CAR calibration register ( 110 bits )
The calibration register holds the calibration constants that are used by the internal DSP for the correction of each
measurement. At power-up sequence the Zener-Zap subregister ZCL is copied into the CAR register as shown in fig.
7.4.6.1. The register can be read or written in mode 8 via the SDI bus at any time. In particular it is possible to write
preliminary calibration constants with CAR or overwrite the loaded ZCL data, if a calibration has been changed.
Nr. CAR bits 109-99 98-88 87-77 76-66 65-55 54-44 43-33 32-22 21-11 10-0 NOTE
0 Subregister CGI1 CGI2 CGI3 CGI4 CAU0 CAU1 CAU2 CAU3 CAU4 CAU5
1), 2)
1 default 1548 1548 1548 1548 1548 1548 1548 1548 1548 1548
Notes:
1) Calibration register is composed of the following constants each having 11 bits:
CGI1, CGI2, CGI3, CGI4, CAU0, CAU1, CAU2, CAU3, CAU4, CAU5
2) This register can be read or written at any time via the SDI bus. In particular it is possible to write preliminary
calibration constants with CAR or overwrite the loaded ZCL data, if a calibration has been changed.
7.5.7 TRR trimming register ( 20 bits )
In the TRR register the calibration constants for the reference voltage, for the amplifier-offset trim and for the current source setting are stored.
At power-up sequence the Zener-Zap subregister ZTR is loaded into the TRR register. This register can be read or written in mode 8 via the
SDI bus. In particular it is possible to write preliminary calibration constants into TRR or overwrite the loaded ZTR data, if a calibration has been
changed. The trimming of the TRR-registors is usually done at the factory before supplying the part.
Nr. TRR bits 19-15 14-10 9-5 4-0 NOTE
0 Subregister TRIMC TRIMA TRIMBV TRIMBTC
1)
1 default 0 0 0 0
Notes:
1)writing into TRR register is done as usual with the MSB first
subregister TRIMC
change of current source output with TRIMC bits
Nr. trimc0 dI/Io Notes
trimcs trimc3 trimc2 trimc1
%
0 0 0 0 0 0 0 1),2)
1 0 0 0 0 1 -1*2.3 1),2)
2 0 0 0 1 0 -2*2.3 1),2)
.. .. .. .. .. .. ..
14 0 1 1 1 0 –14*2.3 1),2)
15 0 1 1 1 1 –15*2.3 1),2)
16 1 0 0 0 0 16*2.3 1),2)
17 1 0 0 0 1 15*2.3
18 1 0 0 1 0 14*2.3 1),2)
.. .. .. .. .. .. ..
30 1 1 1 1 0 2*2.3 1),2)
31 1 1 1 1 1 1*2.3
Notes:
1) Io is the current in µ A at TRIMC = 00000
2) The output current of the internal current source can be controlled in a wide range via the bit setting in CRG. In some applications it may be
necessary to trim the current in the rang of +/- 30% for an optimum result of the external temperature measurement. This trimming is achieved
with writing into subregister TRIMC of the TRR register. The trimming is done in % for all ranges selected in CRG register.
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subregister TRIMA
change of amplifier offset with TRIMA bits
The offset of the PGA should be trimmed to a mimimum absolute value to guarantee the
full dynamic range with all gain settings.
Nr. trima0 Voffset Notes
trimas trima3 trima2 trima1
mV
0 0 0 0 0 0 Uos 1),2) ,3)
1 0 0 0 0 1 Uos -1*1.34
1),2)
2 0 0 0 1 0 Uos -2*1.34
1),2)
.. .. .. .. .. .. ..
14 0 1 1 1 0 Uos –14*1.34
1),2)
15 0 1 1 1 1 Uos –15*1.34
1),2)
16 1 0 0 0 0 Uos 1),2)
17 1 0 0 0 1 Uos +1*1.34
18 1 0 0 1 0 Uos +2*1.34
1),2)
.. .. .. .. .. .. ..
30 1 1 1 1 0 Uos +14*1.34
1),2)
31 1 1 1 1 1 Uos +15*1.34
Notes:
1) Uos is the input offset voltage in mV at TRIMA = 00000
2) Every step of TRIMA settings brings $offset=1.34 mV change in absolute value of the input offset voltage.
If the measured value is Uos then the number that should be written into the TRIMA for minimum
final absolute value is calculated as TRIMA=int((Uos)/1.34) for Uos above zero and
TRIMA=16+int(-Uos)/1.34) for Uos below zero.
3) The input offset voltage can be measured with chopping and dechopping bits being cleared in register CRG.
Any input channel as well as gain settings can be used. The input should be shorted to avoid any external voltages to interfere with the
measurement. If the measured output voltage is Va then the offset voltage is calculated acc. Vos = Va/gain.
subregister TRIMBV
change of reference voltage Uo with TRIMBV bits
Nr. trimbv0 VREF Notes
trimbvs trimbv3 trimbv2 trimbv1
mV
0 0 0 0 0 0 Ua 1),2)
1 0 0 0 0 1 Ua -1*5.1
1),2)
2 0 0 0 1 0 Ua -2*5.1
1),2)
.. .. .. .. .. .. ..
14 0 1 1 1 0 Ua –14*5.1
1),2)
15 0 1 1 1 1 Ua –15*5.1
1),2)
16 1 0 0 0 0 Ua 1),2)
17 1 0 0 0 1 Ua +1*5.1
18 1 0 0 1 0 Ua +2*5.1
1),2)
.. .. .. .. .. .. ..
30 1 1 1 1 0 Ua +14*5.1
1),2)
31 1 1 1 1 1 Ua +15*5.1
Notes:
1) Ua is the reference voltage in mV at TRIMBTC = 00000, the optimum value is 1.232V.
2) Every step of TRIMBV settings brings $BV=5.1 mV change in absolute value of the reference voltage.
For trimming the TC value and absolute value of the reference voltage it is recommended to trim the TC
value first and then trim the absolute value since TRIMBTC is changing both TC and absolute value, whereas
TRIMBV is changing only the absolute value.
If the measured absolute value is Uam then the number that should be written into the TRIMBV for optimum
final absolute value is calculated as TRIMBV=int((Uam-1.231)/0.0051) for Uam above the ideal value and
TRIMBV=16+int(-(Uam-1.232)/0.0051) for Uam below the ideal value.
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subregister TRIMBTC
change of reference voltage Uo and TC-value with TRIMBTC bits
Nr. trimbtc0 VREF TC Notes
trimbtcs trimbtc3 trimbtc2
1
trimbtc1
1 mV ppm/K
0 0 0 0 0 0 Uo TCo 1),2)
1 0 0 0 0 1 Uo -1*5.2 TCo -1*12.7
1),2)
2 0 0 0 1 0 Uo -2*5.2 TCo -2*12.7
1),2)
.. .. .. .. .. .. ..
14 0 1 1 1 0 Uo –14*5.2 TCo -14*12.7
1),2)
15 0 1 1 1 1 Uo –15*5.2 TCo -15*12.7
1),2)
16 1 0 0 0 0 Uo 1),2)
17 1 0 0 0 1 Uo +1*5.2 TCo +1*12.7
18 1 0 0 1 0 Uo +2*5.2 TCo -2*12.7
1),2)
.. .. .. .. .. .. .. ..
30 1 1 1 1 0 Uo +14*5.2 TCo -14*12.7
1),2)
31 1 1 1 1 1 Uo +15*5.2 TCo -15*12.7
Notes:
1) Uo is the reference voltage in mV and TCo is the TC value in ppm/K at TRIMBV = 00000
2) Every step of TRIMBTC settings brings $BTC=5.2 mV change in absolute value of the reference voltage and
S=12.7 ppm/K change in the slope of temperature dependence. So for trimming the temperature coefficient of
the band-gap reference 2 measurements are recommended ( at T1=25oC and at T2=125oC ). If the measured TC
value is TCm then the number that should be written into the TRIMBTC for minimum final TC is calculated as
trimBTC=int(TCM/12.7) for positive values and trimBTC=16+int(-TCM/12.7) for negative values.
The absolute voltage is also changed in this way, which must be compensated by bringing back the absolute value by changing the TRIMBV
register. Usually the TRIMBVx=-TRIMBTCx+1 is sufficient. If further accuracy or change of absolute value is necessary it can be adjusted by
making some more measurements and adjustments.
ZZR
REGISTER
:
ZTR ZCL ZTC
20 110 53
TRR CAR
bit0 bit0
reg.7 reg.6
5
TRRCAR
data in
bit
0
bit0
R/W
18
8
ZLO
ZLO
Figure 8: Copying of ZCL and ZTR registers into CAR and TRR registers
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7.5.8 THR alarm (Wake-up) threshold register ( 17 bits )
Nr. MR16 MR15 MR14 MR13 MR12 MR11 … MR1 MR0 NOTE
0 A/B s Msb lsb
default 0 0 1 0 0 0
1)
Notes:
1) _ All measurements are performed in channel A therefore MR16 must be set to zero. When channel B is selected
no interrupt will be generated.
- The signed value is used. For positive THR values the ASSP will initiate an interrupt whenever the measured
value is bigger than the THR value. For negtive THR values the interrupt will be generated for a negative
result with an absolute value bigger than the absolute value of the THR register.
7.5.9 MSR measurement result register ( 18 bits )
Nr. MR17 MR16 MR15 MR14 MR13 MR12 MR11 … MR1 MR0 NOTE
Overflow/un
derflow
A/B S msb lsb
1)
Notes:
1) - Result word length is 16 bits because of calibration accuracy
and to maintain all possible resolutions ( different setting ).
- A/B bit signifies which measurement was performed: the one defined in CRA or CRB:
MR16=0 -> A
MR16=1 -> B
- Overflow/underflow bit is set whenever the result after multiplication by calibration
constant is bigger than 32767 or smaller than –32767.
In Wake-up or Alarm mode the overflow/underflow always sets INTN signal to LO.
8 Digital interface description
The digital interface of the AS8501 consists of two input pins (CLK and SCLK) and two I/O pins (INTN and SDAT). The SCLK and SDAT pins
are used as universal serial data interface (SDI). SDI operates only if external clock signal (CLK) is running.
8.1 CLK
In all operating modes except the Wake-up mode this pin must be connected to 8 MHz clock signal. In the Wake-up mode (MWU) the CLK pin
must be connected to logic HI or float.
8.2 INTN
The INTN pin is used to signal various conditions to the microcontroller, depending on the operating mode.
application modes of the INTN pin
Mode Signal Direction Purpose Note
0 Load clock (internal) Output Indicates progress of the Zener-Zap load process 1)
1, 2,7 SDI clock disable Output Si
g
nals new result and su
gg
ests when to disable SCLK in
high-precision measurement phase
2)
3 idle / wake-up not Output Signals the wake-up condition
4 idle / alarm not Output Signals the alarm condition
5 PW1 Input Shows the programming pulse width
6,8,9 Logic ‘0’ Output No purpose
10 t12 Output Test mode
10 t18 Output Test mode
Notes:
1) 188 clock pulses are generated from the internal oscillator source during the loading time.
2) In measurement modes (MMS and MMD) the INTN pin is used to synchronize the SDI bus operations (See Fig. 9).
The trailing edge of INTN signals the start of a new measurement.
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The determination of Tcnv and Tres from the parameter settings is:
Tcnv % R1/(fovs*2) Tres = MM*Tcnv*R2*2 with R1=OSR and R2=number of averages
8.3 SDI bus operation
SDI bus is a 2-line bi-directional interface between one master and one slave unit. Typically the master unit is a microcontroller with software-
implemented SDI protocol. The ASSP is always the slave unit. SDI bus operation is presented on Figure 10.
During data transfers the sdat signal changes while sclk is low. The sdat signal can change while sclk is high only to generate start or
exception conditions.
Strobe ASSP
The master unit always generates the sclk signal.
The master unit generates the sdat signal in start, direction, address, master-write data and exception conditions. The master sdat pin is in
high-impedance state in master-read data condition.
The slave unit drives the sdat signal only in master-read data condition. In all other cases the slave sdat pin is in high-impedance state. During
data transfer in read condition the internal AD-conversion in continuing but the data in the MSR-register is not updated and the output of the
INTN
Tres
Tcnv
start measurement ii-1 i+1
i-2 i-1 i
available
results on SDI
SDAT
sclk
Start
irection
D
ata transfer
Address
R
egister data
Exception
Figure 9: INTN pin in modes 1 and 2
Figure 10: SDI bus operation
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INTN signal is suppressed. Only after the completion of the reading cycle the ASSP returns to the normal condition and updates the MSR-
register immediately if a new AD-conversion has been finished during data transfer.
The master unit does not detect any bus conditions since it generates them. Data transfer conditions (direction, register address and register
data) must not be changed until the current condition is over. The slave unit does not detect start and exception condition when master-read is
in progress.
The exception condition is reserved for future use and should be avoided.
8.4 Data transfers
Generally the SDI interface is active in all ASSP modes. For security reasons some write operations are restricted to certain modes. Read
operations are never disabled in order to keep consistent sdat driving conditions.
Writing to the result, trimming and calibration registers (MSR, CAR and TRR) is allowed only in test modes.
Writing to the Zener-Zap register is allowed only in mode MZP.
The first data bit after the start condition in each data transfer defines the data direction: sdat=high is used for master-read data (mr) condition
and sdat=low for master-write data (mw) condition.
Data is transferred with the most significant bit (MSB) first. Data bits are composed of register address and register data bits. Register address
is transmitted first, followed by the register data bits. The register address is always 4 bits long. The number of register data bits in table 7.5 is
implied by the register address.
Figure 11: SDI Data transfer
The ASSP supports the data transfers presented in Table 8.1.
master read-write operations
REGISTER ADDRESS Contents read
allowed in
modes
write allowed in
modes
page
OPM 0 operating mode All All
CRA 1 measurement set-up A All All
CRB 2 measurement set-up B All All
CRG 3 general measurement conditions All All
MSR 4 measurement result All >7
ZZR 5 Zener-Zap data All 5
CAR 6 calibration register All >7
TRR 7 trimming register All >7
THR 8 alarm or wake-up threshold register All All
L
SBMSBa0a1a2a3
Register data
sclk
sdat
Register addressDirection
mw
mr
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8.5 SDI bus timing
Timing definitions for SDI bus are based on software-implemented master unit protocol
strobe ASSP strobe µC
Figure 12: SDI Bus timing
TS
TS
_m
DV_s
HI - Z
HI - Z
CDD
TS_s
PW_sc
l
k
TS
_
m
D
V_
m
D
V_
m
LO
_sc
l
kM
DE
master sdat
slave sdat
(ASIC)
(uP)
sclk
(uP)
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SDI bus timing
Nr. PARAMETER SYMBOL MIN
TYP MAX Unit Conditions NOTE
0 SCLK pulse width PW_sclk 120 ns All
1 SCLK low LO_sclk 120 ns All
5), 6)
2 Master SDAT exception
after SCLK
MDE 120 ns All
3 Master SDAT valid
before/after SCLK
DV_m 120 TSW ns All
1)
4 Slave SDAT not valid
after SCLK
DV_s 120 ns Master read
5 Master 3-state ON/OFF TS_m TS_s TSW ns Master read
6 Slave 3-state ON/OFF TS_s 120 ns Master read
7 Bus condition detection
disabled in slave unit
CDD ns Master read
3)
Notes:
1)TSW is typical time required by the microcontroller program to change or to read the state of
the I/O pin
3) Start detection is disabled when slave unit transmits data
5) LO_sclk>300ns and PW_sclk> 2µ sec required to read ZZR.
6) LO_sclk > (3/2)*TCLK = (3/2)/f CLK = (3/2)/8MHz=187.5ns required for results synchronisation in MSR.
8.6 SDI access to OTP memory
SDI can read the OTP memory in any mode by reading the register ZZR.
8.6.1 ZZR register bit mapping
Cell index 0 1 2 3 4 5 6 7
Purpose pos A
1) pos B 2) pos C 3) lock A 4) lock B
5) trimcs trimc3 trimc2
ZZR field ZLO ZLO ZLO ZLO ZLO ZTR ZTR ZTR
ZZR bit 187 (msb) 186 185 184 183 182 181 180
1) Always programmed to '0' during the production test
2) Always programmed to '0' during the production test
3) Always programmed to '1' during the production test
4) Reserved
5) Reserved
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Cell index 8 9 10 11 12 13 14 15
Purpose trimc1 trimc0 trimas trima3 trima2 trima1 trima0 trimbvs
ZZR field ZTR ZTR ZTR ZTR ZTR ZTR ZTR ZTR
ZZR bit 179 178 177 176 175 174 173 172
Cell index 16 17 18 19 20 21 22 23
Purpose trimbv3
trimbv2 trimbv1 trimbv0 trimbtcs trimbtc3 trimbtc2 trimbtc1
ZZR field ZTR ZTR ZTR ZTR ZTR ZTR ZTR ZTR
ZZR bit 171 170 169 168 167 166 165 164
Cell index 24 25 26 27 28 29 30 31
Purpose trimbtc0
cgi1_10 cgi1_9 cgi1_8 cgi1_7 cgi1_6 cgi1_5 cgi1_4
ZZR field ZTR ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 163 162 161 160 159 158 157 156
Cell index 32 33 34 35 36 37 38 39
Purpose cgi1_3
cgi1_2 cgi1_1 cgi1_0 cgi2_10 cgi2_9 cgi2_8 cgi2_7
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 155 154 153 152 151 150 149 148
Cell index 40 41 42 43 44 45 46 47
Purpose cgi2_6
cgi2_5 cgi2_4 cgi2_3 cgi2_2 cgi2_1 cgi2_0 cgi3_10
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 147 146 145 144 143 142 141 140
Cell index 48 49 50 51 52 53 54 55
Purpose cgi3_9
cgi3_8 cgi3_7 cgi3_6 cgi3_5 cgi3_4 cgi3_3 cgi3_2
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 139 138 137 136 135 134 133 132
Cell index 56 57 58 59 60 61 62 63
Purpose cgi3_1
cgi3_0 cgi4_10 cgi4_9 cgi4_8 cgi4_7 cgi4_6 cgi4_5
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 131 130 129 128 127 126 125 124
Cell index 64 65 66 67 68 69 70 71
Purpose cgi4_4
cgi4_3 cgi4_2 cgi4_1 cgi4_0 cau0_10 cau0_9 cau0_8
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 123 122 121 120 119 118 117 116
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Cell index 72 73 74 75 76 77 78 79
Purpose cau0_7
cau0_6 cau0_5 cau0_4 cau0_3 cau0_2 cau0_1 cau0_0
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 115 114 113 112 111 110 109 108
Cell index 80 81 82 83 84 85 86 87
Purpose cau1_10
cau1_9 cau1_8 cau1_7 cau1_6 cau1_5 cau1_4 cau1_3
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 107 106 105 104 103 102 101 100
Cell index 88 89 90 91 92 93 94 95
Purpose cau1_2
cau1_1 cau1_0 cau2_10 cau2_9 cau2_8 cau2_7 cau2_6
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 99 98 97 96 95 94 93 92
Cell index 96 97 98 99 100 101 102 103
Purpose cau2_5
cau2_4 cau2_3 cau2_2 cau2_1 cau2_0 cau3_10 cau3_9
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 91 90 89 88 87 86 85 84
Cell index 104 105 106 107 108 109 110 111
Purpose cau3_8
cau3_7 cau3_6 cau3_5 cau3_4 cau3_3 cau3_2 cau3_1
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 83 82 81 80 79 78 77 76
Cell index 112 113 114 115 116 117 118 119
Purpose cau3_0
cau4_10 cau4_9 cau4_8 cau4_7 cau4_6 cau4_5 cau4_4
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 75 74 73 72 71 70 69 68
Cell index 120 121 122 123 124 125 126 127
Purpose cau4_3
cau4_2 cau4_1 cau4_0 cau5_10 cau5_9 cau5_8 cau5_7
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZCL
ZZR bit 67 66 65 64 63 62 61 60
Cell index 128 129 130 131 132 133 134 135
Purpose cau5_6
cau5_5 cau5_4 cau5_3 cau5_2 cau5_1 cau5_0 tcu1_8
ZZR field ZCL ZCL ZCL ZCL ZCL ZCL ZCL ZTC
ZZR bit 59 58 57 56 55 54 53 52
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Cell index 136 137 138 139 140 141 142 143
Purpose tcu1_7
tcu1_6 tcu1_5 tcu1_4 tcu1_3 tcu1_2 tcu1_1 tcu1_0
ZZR field ZTC ZTC ZTC ZTC ZTC ZTC ZTC ZTC
ZZR bit 51 50 49 48 47 46 45 44
Cell index 144 145 146 147 148 149 150 151
Purpose tcu0_8
tcu0_7 tcu0_6 tcu0_5 tcu0_4 tcu0_3 tcu0_2 tcu0_1
ZZR field ZTC ZTC ZTC ZTC ZTC ZTC ZTC ZTC
ZZR bit 43 42 41 40 39 38 37 36
Cell index 152 153 154 155 156 157 158 159
Purpose tcu0_0
trt0_10 trt0_9 trt0_8 trt0_7 trt0_6 trt0_5 trt0_4
ZZR field ZTC ZTC ZTC ZTC ZTC ZTC ZTC ZTC
ZZR bit 35 34 33 32 31 30 29 28
Cell index 160 161 162 163 164 165 166 167
Purpose trt0_3 trt0_2 trt0_1 trt0_0 tcn3_7 tcn3_6 tcn3_5 tcn3_4
ZZR field ZTC ZTC ZTC ZTC ZTC ZTC ZTC ZTC
ZZR bit 27 26 25 24 23 22 21 20
Cell index 168 169 170 171 172 173 174 175
Purpose tcn3_3
tcn3_2 tcn3_1 tcn3_0 tcn2_7 tcn2_6 tcn2_5 tcn2_4
ZZR field ZTC ZTC ZTC ZTC ZTC ZTC ZTC ZTC
ZZR bit 19 18 17 16 15 14 13 12
Cell index 176 177 178 179 180 181 182 183
Purpose tcn2_3
tcn2_2 tcn2_1 tcn2_0 tcn1_7 tcn1_6 tcn1_5 tcn1_4
ZZR field ZTC ZTC ZTC ZTC ZTC ZTC ZTC ZTC
ZZR bit 11 10 9 8 7 6 5 4
Cell index 184 185 186 187
Purpose tcn1_3
tcn1_2 tcn1_1 tcn1_0
ZZR field ZTC ZTC ZTC ZTC
ZZR bit 3 2 1 0
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8.6.2 Stored ZZR-register mapping
ZZR-Register
ZZR subregister
109876543210
msb lsb
ZLO xxxxx 187183
TRIMC x x x x x 182 178 current source calibration
TRIMA x x x x x 177 173 PGA offset calibration
TRIMBV xxxxx 172168reference voltage calibration
TRIMBTC xxxxx 167163TC calibration
CGI1 c0 c0 c0 c0 c0 c0 c0 c0 c0 c0 c0 162 152 gain 6 currrent 1500A
CGI2 c1 c1 c1 c1 c1 c1 c1 c1 c1 c1 c1 151 141 gain 24 current 300 A
CGI3 c2 c2 c2 c2 c2 c2 c2 c2 c2 c2 c2 140 130 gain 50 current 150 A
CGI4 00000000000 129119 gain100 current 75 A
CAU0 c1 c1 c1 c1 c1 c1 c1 c1 c1 c1 c1 118 108 calibration factor for gain 24
CAU1 11111111111 10797
CAU2 11111111111 9686
CAU3 c4 c4 c4 c4 c4 c4 c4 c4 c4 c4 c4 85 75 calibration factor for gain 1
CAU4 c3 c3 c3 c3 c3 c3 c3 c3 c3 c3 c3 74 64 calibration factor for gain 100
CAU5 ct ct ct ct ct ct ct ct ct ct ct 63 53 calibration factor for internal temperature
TCU1 1 cs cs cs cs cs cs cs cs 52 44 8 bits for checksum 1)
TCU0 111fifififififi 43356 bits for internal clock 2)
TRT0 ttttttttttt 342411 bits for internal temperature at 23°C
TCN3 n23 n n n n n n n 23 16 high byte for serial number
TCN2 nnnnnnnn 15 8 medium byte for serial number
TCN1 n n n n n n n n0 7 0 low byte for serial number
x = these fields are written during calibration
c0 = these fields are written during calibration of G6
c1 = these fields are written during calibration of G24 (i.e. 30 mV = 30 000 digits)
0 = Zero value of calibration constant for detection of unwanted POR
ct = calibration factor for slope of Tint : 75 digits/deg
cs = 8-Bit checksum for ZZR-register
fi = 6-bit for calibration of internal clock
t = 11 bits for Tint value at 23 °C
nr = 24 bits serial number
ZTC
bit no. in subregister ZZR-bits remarks
ZCL
ZTR
Notes:
1) The checksum contains the added value of all bits in the ZZR register without the 6 checksum bits
2) Tthe internal clock frequency can be calculated int_fclk= (240 + 6-bit fi-number) kHz
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9 General application hints
Since the AS8501 is optimised for low voltage applications extreme care should be taken that the signal is not disturbed by influences like bad ground
reference, external noise pick-up, thermal EMFs generated at the transition of different materials or ground loops. The influence of these error sources
can be quite high and they may completely shadow the excellent properties of the device if not handled properly. The following sections are supposed
to supply additional informations to the design engineer how to get around some of these problems.
9.1 Ground connection, analog common
The analog common terminal where all voltages are referring to is RSHL. All ground lines of the external circuitry of VBAT, ETS and ETR as well as the
voltage sense line of the low ohmic current sensing resistor should be connected to each other in a star like ground point. It is recommended that this
point is as close as possible situated to the low side sense terminal of the current sensing resistor. It should also be connected to the VSS and VSSD
terminal, but the return line of both must leave this point separately. Also the power decoupling capacitors should be connected to the analog common.
To give an example of the magnitude of possible errors consider that the ground return of the power supply is not connected properly and 5 mm of a
copper track 35µm thick and 0.1 mm wide are within the measuring circuit with a current flow of 5 mA. This will result in an offset of 120 µ V which is
more than 500 times higher than the typical offset of the ASSP. In addition the current fluctuations will act as an extra noise voltage which is also way
above that of the device itself.
9.2 Thermal EMF
another major source of error for low level measurements are thermal voltages (electromotive force, thermal EMF) or Seebeck voltages which are
principally produced by any junction of two dissimilar materials. On PC-boards pairs of dissimilar materials may consist of the copper tracks and the
solder, the leads of different components or different materials used in the construction within the components. Any temperature difference between
two connection produces a voltage which is superimposed to the measuring voltage.
A number of strategies are known to detect or minimise their influence on the measuring result:
- in cases were a current has to be measured directly or a current is to be used to activate a resistive sensor (like
Ohm-meter or temperature measurement with RTDs, NTC or PTC) a switch in the circuit could be used to interrupt or invert the current thus
producing a current change dI. In the difference of the two voltage states dU the EMFs as well as the Offset voltages of the amplifier are fully
eliminated. For resistance measurements this method is known as ‘true Ohm’ measurement.
- in applications were this is not possible and the problematic device (i.e. the input resistor of an amplifier) can be located it may help to place a
dummy device of the same type in the circuit as close and thermally connected as good as possible to compensate the influence of the first one.
- Since the thermal EMFs are proportional to the temperature difference it is important to maintain a homogeneous temperature distribution in the
vicinity of the sensitive area. This is possible by keeping this area as small as possible, by avoiding any heat sources nearby or by increasing the
heat conductivity of the substrate, i.e. wide and thick copper tracks, multilayer board or even metal substrate.
- The best solution of all however is to avoid the thermal EMFs by using only components which are matched to the copper world which means
that their thermo-electrical power against copper is zero. This is specially important for current measurements in the range of 10- 1000A. In this
case the resistance value has to be very low (down to 100µOhms) to limit the measuring power and avoid an overheating of the sensing resistor.
On the other hand the voltages to be detected are extremely low if a high resolution is required. If for instance a current of 10 mA has to be
measured with a 100µ Ohm resistor, the resolution of the measuring system must be better than 1µ V and the error voltages due to thermal EMFs
must be below this limit. Quite often people are trying to use the well known Konstantan (CuNi44) for current sensing resistors. This is a bad
choice since the thermal EMF versus copper is very high.
With –40µ V/deg already a temperature difference of
2.5 K is enough to produce an error which is 100 times lager than the required resolution. Or vice versa a temperature fluctuation of only 1/100 K
produces a ‘thermal noise’ which is equivalent to the required resolution.
With such materials and high currents of 10A and above the other thermoelectric effect, the so called Peltier-effect, can also play an important
role. Under current flow this effect generates heat in one junction and destroys the same amount of heat in the other junction. The amount of
heat is proportional to the current and its direction. The result is a temperature difference which in turn generates a thermal EMF proportional to it.
Finally this means that such a resistor produces its own error voltage and it is never possible to measure better than 1-2% with such badly
matched materials. The precision resistance materials Manganin, Zeranin and Isaohm are perfectly matched to the copper world and resistors
made from these materials can achieve the high quality that is necessary for low
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level measurements and high resolution.
9.3 Noise considerations
for every low level measuring system it is essential to know the origin of noise and to accept the limitations given by it. Three major sources of noise
have to be considered. The input voltage noise and the input current noise of the amplifier and the thermal noise (Johnson noise) of resistors in the
external circuitry around the amplifier. Due to the fact that these three sources are not correlated they can be added in the well known square root
equation.
In most applications the input resistor or input divider is low ohmic (i.e. below 10 kOhms) which mean that the noise voltage produced by the input
current noise is negligible compared to the input voltage noise. The input noise density (En) of the AS8501 is with only 35 nV/sqr(Hz) extremely low.
This could be achieved with a special internal analog and digital chopper circuitry which eliminates the CMOS typical 1/f-noise completely. Even though
the overall noise will be dominated by the input amplifier as long as the external resistors are below 10 kOhm.
The total noise voltage generated at a given frequency resp. in a given frequency band (BW) is given by:
Un= En*sqr(BW)
This square root dependence can be seen very nicely in fig. 9.10. The typical square-root shaped dependence is found for both the peak to peak noise
as well as for the equivalent RMS noise.
The bandwidth resp. the sampling frequency of the AS8501 can be adapted to the requirements of the application by programming the internal digital
filter via the SDI bus. For a sampling frequency of 16kHz the input voltage RMS noise is less than 5µ V, whereas at 500 Hz already 1µV (or 1LSB) is
reached.
If the customer needs even higher resolution at a lower measuring speed the internal integration time can be further increased but due to the limitation
of the digital noise ( 1LSB) it is better to perform an external averaging in the attached µ C. In this way the resolution of the system can be considerably
increased to less than 0.1 µV for sampling rates of 5 Hz and below which corresponds to an effective AD-converter width of more than 20 bits. (see fig.
9.10)
9.4 Shielding, guarding
In many applications it is difficult to gain full benefit from the AS8501 performance since a number of external error sources can disturb the
measurement. To achieve the maximum performance the design engineer has to take care specially of the layout of the PC-board and the sense
connections to the external components. To avoid noise pick-up from external magnetic fields all tracks on the PC-board should be parallel strip lines
and they should be traced as close as possible to each other. External sensing cables should be twisted and kept away from current carrying cables as
far as possible. For longer cables a shielding is sometimes helpful but care should be taken that the shield is not connected to one of the sense leads.
For an optimum performance it should be open on one side, the other side should be connected to the central (star like) analog common point.
In very sensitive applications it may be wise to use a guard ring around both inputs and it should be connected again to the analog common point. This
procedure minimises leakage currents and parasitic capacitances between different terminals and components on the PC-board.
EMV interferences can be affectively avoided in most cases by using standard SMD-type high frequency filters in the analog input lines
as well as in the digital output lines.
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10 Typical performance characteristics
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Package Dimensions
Thermal Resistance junction / ambient.: 66 K/W (typ.) in still air
11 Revision History
Revision Date Description
1.0
1.1
Feb.10,2006
March 23, 2006
Initial Revision
RthJA
12 Ordering Information
Delivery in Tape and Reel (1 reel = 1500 devices)
Order AS8501-ASOT
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13 Contact
13.1 Headquarters
austriamicrosystems AG
A 8141 Schloss Premstätten, Austria
Phone: +43 3136 500 0
Fax: +43 3136 525 01
industry.medical@austriamicrosystems.com
www.austriamicrosystems.com
13.2 Sales Offices
austriamicrosystems Germany GmbH
Tegernseer Landstrasse 85
D-81539 München, Germany
Phone: +49 89 69 36 43 0
Fax: +49 89 69 36 43 66
austriamicrosystems Italy S.r.l.
Via A. Volta, 18
I-20094 Corsico (MI), Italy
Phone: +39 02 4586 4364
Fax: +39 02 4585 773
austriamicrosystems France S.A.R.L.
124, Avenue de Paris
F-94300 Vincennes, France
Phone: +33 1 43 74 00 90
Fax: +33 1 43 74 20 98
austriamicrosystems Switzerland AG
Rietstrasse 4
CH 8640 Rapperswil, Switzerland
Phone: +41 55 220 9008
Fax: +41 55 220 9001
austriamicrosystems UK, Ltd.
88, Barkham Ride,
Finchampstead, Wokingham
Berkshire RG40 4ET, United Kingdom
Phone: +44 118 973 1797
Fax: +44 118 973 5117
austriamicrosystems AG
Klaavuntie 9 G 55
FI 00910 Helsinki, Finland
Phone: +358 9 72688 170
Fax: +358 9 72688 171
austriamicrosystems AG
Bivägen 3B
S 19163 Sollentuna, Sweden
Phone: +46 8 6231 710
austriamicrosystems USA, Inc.
8601 Six Forks Road
Suite 400
Raleigh, NC 27615, USA
Phone: +1 919 676 5292
Fax: +1 509 696 2713
austriamicrosystems USA, Inc.
4030 Moorpark Ave
Suite 116
San Jose, CA 95117, USA
Phone: +1 408 345 1790
Fax: +1 509 696 2713
austriamicrosystems AG
Suite 811, Tsimshatsui Centre
East Wing, 66 Mody Road
Tsim Sha Tsui East, Kowloon, Hong Kong
Phone: +852 2268 6899
Fax: +852 2268 6799
austriamicrosystems AG
AIOS Gotanda Annex 5th Fl., 1-7-11,
Higashi-Gotanda, Shinagawa-ku
Tokyo 141-0022, Japan
Phone: +81 3 5792 4975
Fax: +81 3 5792 4976
austriamicrosystems AG
#805, Dong Kyung Bldg.,
824-19, Yeok Sam Dong,
Kang Nam Gu, Seoul
Korea 135-080
Phone: +82 2 557 8776
Fax: +82 2 569 9823
austriamicrosystems AG
Singapore Representative Office
83 Clemenceau Avenue, #02-01 UE Square
239920, Singapore
Phone: +65 68 30 83 05
Fax: +65 62 34 31 20
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Disclaimer
Devices sold by austriamicrosystems AG are covered by the warranty and patent identification provisions appearing in its Term of Sale. austriamicrosystems AG makes no warranty, express,
statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. austriamicrosystems AG reserves the
right to change specifications and prices at any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check with austriamicrosystems AG for current
information. This product is intended for use in normal commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability
applications, such as military, medical life-support or life-sustaining equipment are specifically not recommended without additional processing by austriamicrosystems AG for each application.
The information furnished here by austriamicrosystems AG is believed to be correct and accurate. However, austriamicrosystems AG shall not be liable to recipient or any third party for any
damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interruption of business or indirect, special, incidental or consequential damages, of any kind,
in connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation or liability to recipient or any third party shall arise or flow out of
austriamicrosystems AG rendering of technical or other services.
Copyright
Devices sold by austriamicrosystems are covered by the warranty and patent indemnification provisions appearing in its Term of Sale. austriamicrosystems makes no warranty, express,
statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. austriamicrosystems reserves the right
to change specifications and prices at any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check with austriamicrosystems for current
information. This product is intended for use in normal commercial applications.
Copyright © 2004 austriamicrosystems. Trademarks registered ®. All rights reserved. The material herein may not be reproduced, adapted, merged, translated, stored, or used without the prior
written consent of the copyright owner. To the best of its knowledge, austriamicrosystems asserts that the information contained in this publication is accurate and correct. However,
austriamicrosystems shall not be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interruption of
business or indirect, special, incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation
or liability to recipient or any third party shall arise or flow out of austriamicrosystems rendering of technical or other services.
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