Sep.2000
D
E
EC
E
G
H
K
R
AB
B
A
NF
L
M
C
JG
P
Q
C
U - M4 THD
(2 TYP.)
S - M8 THD
(2 TYP.)
T - DIA.
(4 TYP.)
E
G
E
Dimensions Inches Millimeters
A 5.12 130.0
B 4.33±0.01 110.0±0.25
C 1.840 46.75
D
1.73+0.04/–0.02 44.0+1.0/–0.5
E
1.46+0.04/–0.02 37.0+1.0/–0.5
F 1.42 36.0
G 1.25 31.8
H 1.18 30.0
J 1.10 28.0
K 1.08 27.5
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of one
IGBT in a single configuration with
a reverse-connected super-fast re-
cover y free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery
Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy
Heat Sinking
Applications:
uAC Motor Control
uMotion/Servo Control
uUPS
uWelding Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM800HA-24H is a 1200V (VCES),
800 Ampere Single IGBT Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 800 24
Dimensions Inches Millimeters
L 0.79 20.0
M 0.77 19.5
N 0.75 19.0
P 0.61 15.6
Q 0.51 13.0
R 0.35 9.0
S M8 Metric M8
T 0.26 Dia. Dia. 6.5
U M4 Metric M4
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM800HA-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Sep.2000
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Symbol Ratings Units
Junction Temperature Tj–40 to +150 °C
Storage Temperature Tstg –40 to +125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (TC = 25°C) IC800 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 1600* Amperes
Emitter Current** (TC = 25°C) IE800 Amperes
Peak Emitter Current** IEM 1600* Amperes
Maximum Collector Dissipation (TC = 25°C) Pc4800 Watts
Mounting Torque, M8 Main Terminal – 8.83 ~ 10.8 N · m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m
Mounting Torque, M4 Terminal – 0.98 ~ 1.47 N · m
Weight – 1600 Grams
Isolation Voltage (Main terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 5.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold V oltage VGE(th) IC = 80mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 800A, VGE = 15V – 2.7 3.6 Volts
IC = 800A, VGE = 15V, Tj = 150°C – 2.4 – Volts
Total Gate Charge QGVCC = 600V, IC = 800A, V GE = 15V – 4500 – nC
Emitter-Collector Voltage VEC IE = 800A, VGE = 0V – – 3.5 Volts
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 180 nF
Output Capacitance Coes VGE = 0V, VCE = 10V – – 64 nF
Reverse Transfer Capacitance Cres –– 36nF
Resistive Turn-on Delay Time td(on) – – 500 ns
Load Rise Time trVCC = 600V, IC = 800A, – – 1200 ns
Switching Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, R G = 3.3Ω– – 1000 ns
Times F all Time tf– – 350 ns
Diode Reverse Recovery Time trr IE = 800A, diE/dt = –1600A/µs – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 800A, diE/dt = –1600A/µs – 5.9 – µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.026 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.058 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.018 °C/W
MITSUBISHI IGBT MODULES
CM800HA-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Sep.2000
MITSUBISHI IGBT MODULES
CM800HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
1200
400
0
V
GE
= 20V
15 12
11
8
7
T
j
= 25
o
C
800
1600
10
9
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
048121620
0
1200
400
800
1600
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 400 800 1200
4
3
2
1
0
VGE = 15V
Tj = 25°C
Tj = 125°C
1600
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
048121620
8
6
4
2
0
T
j
= 25°C
I
C = 320A
IC = 1600A
IC = 800A
0 0.8 1.6 2.4 3.2 4.0
10
1
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
4
EMITTER CURRENT, IE, (AMPERES)
Tj = 25°C
10
3
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10
-1
10
0
10
2
10
3
10
2
10
1
10
0
V
GE
= 0V
10
1
C
ies
C
oes
Cres
COLLECTOR CURRENT I
C
, (AMPERES)
SWITCHING
TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
4
10
1
10
2
10
3
10
2
10
1
t
r
t
d(off)
V
CC
= 600V
V
GE
= ±15V
R
G
= 4.2Ω
T
j
= 125°C
t
d(on)
t
f
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
di/dt = -1600A/µsec
Tj = 25°C
GATE CHARGE, QG, (µC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, VGE
20
01234 5
16
12
8
4
0
IC = 800A
6
V
CC
= 600V
V
CC
= 400V
Sep.2000
MITSUBISHI IGBT MODULES
CM800HA-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.026°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.058°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3