MITSUBISHI IGBT MODULES CM800HA-24H HIGH POWER SWITCHING USE INSULATED TYPE A B U - M4 THD (2 TYP.) R K P E M G B A S - M8 THD (2 TYP.) C E Q J C Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G L H T - DIA. (4 TYP.) F N D E E C Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies G E Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters L 0.79 20.0 A 5.12 B 4.330.01 110.00.25 M 0.77 19.5 1.840 46.75 C 130.0 Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking N 0.75 19.0 D 1.73+0.04/-0.02 44.0+1.0/-0.5 P 0.61 15.6 E 1.46+0.04/-0.02 37.0+1.0/-0.5 Q 0.51 13.0 F 1.42 36.0 R 0.35 9.0 G 1.25 31.8 S M8 Metric M8 H 1.18 30.0 T 0.26 Dia. Dia. 6.5 J 1.10 28.0 U M4 Metric M4 K 1.08 27.5 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM800HA-24H is a 1200V (VCES), 800 Ampere Single IGBT Module. Type Current Rating Amperes VCES Volts (x 50) CM 800 24 Sep.2000 MITSUBISHI IGBT MODULES CM800HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Symbol Ratings Units Junction Temperature Tj -40 to +150 C Storage Temperature Tstg -40 to +125 C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 800 Amperes ICM 1600* Amperes Collector Current (TC = 25C) Peak Collector Current (Tj 150C) Emitter Current** (TC = 25C) IE 800 Amperes Peak Emitter Current** IEM 1600* Amperes Maximum Collector Dissipation (TC = 25C) Pc 4800 Watts Mounting Torque, M8 Main Terminal - 8.83 ~ 10.8 N*m Mounting Torque, M6 Mounting - 1.96 ~ 2.94 N*m Mounting Torque, M4 Terminal - 0.98 ~ 1.47 N*m - 1600 Grams Viso 2500 Vrms Weight Isolation Voltage (Main terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - - 5.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V - - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 80mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 800A, VGE = 15V - 2.7 3.6 Volts IC = 800A, VGE = 15V, Tj = 150C - 2.4 - Volts Total Gate Charge QG VCC = 600V, IC = 800A, VGE = 15V - 4500 - nC Emitter-Collector Voltage VEC IE = 800A, VGE = 0V - - 3.5 Volts Min. Typ. Max. Units - - 180 nF - - 64 nF * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VGE = 0V, VCE = 10V Reverse Transfer Capacitance Cres - - 36 nF Resistive Turn-on Delay Time td(on) - - 500 ns Load Rise Time Switching Turn-off Delay Time Times Fall Time tr VCC = 600V, IC = 800A, - - 1200 ns td(off) VGE1 = VGE2 = 15V, RG = 3.3 - - 1000 ns - - 350 ns Diode Reverse Recovery Time trr tf IE = 800A, diE/dt = -1600A/s - - 250 ns Diode Reverse Recovery Charge Qrr IE = 800A, diE/dt = -1600A/s - 5.9 - C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT - - 0.026 C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi - - 0.058 C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied - - 0.018 C/W Sep.2000 MITSUBISHI IGBT MODULES CM800HA-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) 1600 VGE = 20V 1200 11 800 10 400 9 7 VCE = 10V Tj = 25C Tj = 125C 1200 800 400 8 0 0 0 2 4 6 8 10 4 3 2 1 0 0 4 8 12 16 0 20 400 800 1200 1600 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 103 Tj = 25C IC = 1600A 6 IC = 800A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) 8 EMITTER CURRENT, IE, (AMPERES) Tj = 25C 103 102 Cies 102 Coes 101 IC = 320A VGE = 0V 101 0 8 12 16 0 20 0.8 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 3.2 REVERSE RECOVERY TIME, t rr, (ns) 103 td(off) t d(on) tf 102 tr 101 101 2.4 VCC = 600V VGE = 15V RG = 4.2 Tj = 125C 102 COLLECTOR CURRENT IC, (AMPERES) 4.0 103 102 100 102 Irr di/dt = -1600A/sec Tj = 25C 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 103 t rr Cres COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 103 1.6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 4 100 10-1 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 0 SWITCHING TIME, (ns) VGE = 15V Tj = 25C Tj = 125C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 12 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 800A VCC = 400V 16 12 VCC = 600V 8 4 0 0 1 2 3 4 5 6 GATE CHARGE, QG, (C) Sep.2000 MITSUBISHI IGBT MODULES CM800HA-24H 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.026C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.058C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.2000