IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, With Internal Rbe (Single, Dual, Quad Channel) Single Channel Features * * * * * * Internal RBE for High Stability Four Available CTR Categories per Package Type BVCEO > 60 V Standard DIP Packages Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Quad Channel Description IL66, ILD66, and ILQ66 are optically coupled isolators employing Gallium Arsenide infrared emitters and silicon photodarlington detectors. Switching can be accomplished while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels. Order Information Part C 2 5 C NC 3 4 E A 1 8 E C 2 7 C 3 6 C A 4 5 C E A 1 16 E C 2 15 C C 3 14 C A 4 13 E A 5 12 E C 6 11 C C 7 10 C A 8 9 E i179014 e3 Part Remarks 6 B Dual Channel Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 A 1 CTR 300 %, SMD-8 (option 7) CTR 100 %, DIP-6 ILD66-3X009 CTR 400 %, SMD-8 (option 9) IL66-2 CTR 300 %, DIP-6 ILD66-4X009 CTR 500 %, SMD-8 (option 9) IL66-3 CTR 400 %, DIP-6 ILQ66-4X007 CTR 500 %, SMD-16 (option 7) IL66-4 CTR 500 %, DIP-6 ILQ66-4X009 CTR 500 %, SMD-16 (option 9) ILD66-1 CTR 100 %, DIP-8 ILD66-2 CTR 300 %, DIP-8 ILD66-3 CTR 400 %, DIP-8 ILD66-4 CTR 500 %, DIP-8 ILQ66-1 CTR 100 %, DIP-16 ILQ66-2 CTR 300 %, DIP-16 ILQ66-3 CTR 400 %, DIP-16 ILQ66-4 CTR 500 %, DIP-16 IL66-4X009 CTR 500 %, SMD-8 (option 9) Rev. 1.5, 26-Oct-04 Pb-free Remarks ILD66-2X007 IL66-1 Document Number 83638 Pb For additional information on the available options refer to Option Information. www.vishay.com 1 IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Each Channel Parameter Test condition Peak reverse voltage Forward continuous current Power dissipation Symbol Value VRM 6.0 V IF 60 mA Pdiss Unit 100 mW 1.33 mW/C Symbol Value Unit Pdiss 150 mW 2.0 mW/C Derate linearly from 25 C Output Parameter Test condition Power dissipation Derate linearly from 25C Coupler Parameter Isolation test voltage Test condition Part t = 1.0 sec. Total package power dissipation Symbol Value Unit VISO 5300 VRMS IL66 Ptot 250 mW ILD66 Ptot 400 mW ILQ66 Ptot 500 mW IL66 3.3 mW/C ILD66 5.33 mW/C ILQ66 6.67 mW/C Creepage 7.0 min Clearance 7.0 min Comparative tracking index 175 Derate linearly from 25 C Isolation resistance VIO = 500 V, Tamb = 25 C RIO 1012 VIO = 500 V, Tamb = 100 C RIO 10 11 Storage temperature Tstg - 55 to + 125 C Operating temperature Tamb - 55 to + 100 C 10 sec. Lead soldering time at 260 C www.vishay.com 2 Document Number 83638 Rev. 1.5, 26-Oct-04 IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input GaAs Emitter Typ. Max Forward voltage Parameter IF = 20 mA Test condition Symbol VF Min 1.25 1.5 Unit V Reverse current VR = 6.0 V IR 0.1 10 A Capacitance VR = 0 V CO 25 pF Output Symbol Min Collector-emitter breakdown voltage Parameter IC = 1.0 mA, IF = 0 Test condition BVCEO 60 V Collector-base breakdown voltage (IL66) IC = 10 A BVCBO 60 V Collector-emitter leakage current VCE = 50 V, IF = 0 Capacitance, collector-emitter VCE = 10 V ICEO Typ. Max 1.0 Unit 100 nA 3.4 pF Coupler Parameter Saturation voltage, collectoremitter Test condition Symbol IC = 10 mA, IF = 10 mA VCEsat Min Typ. Max Unit 0.9 1.0 V Current Transfer Ratio Parameter Current Transfer Ratio Document Number 83638 Rev. 1.5, 26-Oct-04 Test condition Part Symbol Min Typ. IL(D,Q)66-1 CTR 100 400 IL(D,Q)66-2 CTR 300 500 % IF = 0.7 mA, VCE = 10 V IL(D,Q)66-3 CTR 400 500 % IF = 2.0 mA, VCE = 5.0 V IL(D,Q)66-4 CTR 500 750 % IF = 2.0 mA, VCE = 10 V Max Unit % www.vishay.com 3 IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors Switching Characteristics Max Unit Rise time -1, -2, -4 Parameter VCC = 10 V Test condition Symbol tr Min Typ. 200 s Fall time -1, -2, -4 IF = 2.0 mA, RL = 100 tf 200 s Rise time -3 IF = 0.7 mA tr 200 s Fall time -3 VCC = 10 V, RL = 100 tf 200 s Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.2 1.3 NCTRce - Normalized CTRce V F - Forward Voltage - V 1.4 TA = -55C 1.2 TA = 25C 1.1 1.0 0.9 TA = 100C 0.8 0.6 0.4 0.2 VCE = 5 V 0.0 .1 .1 1 10 I F - Forward Current - mA 100 iil66_01 VCE = 1 V 0.8 0.7 1 10 100 1000 IF - LED Current - mA iil66_03 Figure 1. Forward Voltage vs. Forward Current 2.0 Figure 3. Normalized Non-saturated and Saturated CTRCE vs. LED Current 10000 Normalized to: VCE = 5 V IF = 2 mA 1.5 VCE = 1 V 1000 VCE = 5 V 1.0 0.5 VCE = 1 V ICE - Collector-emitter current - mA NCTRce - Normalized CTRce Normalized to: VCE = 5 V IF = 10 mA 1.0 100 VCE = 5 V 10 1 .1 .01 0.0 .1 1 10 .001 100 .1 I F - LED Current - mA iil66_02 Figure 2. Normalized Non-saturated and Saturated CTRCE vs. LED Current www.vishay.com 4 iil66_04 1 10 100 I F - LED Current - mA Figure 4. Non-Saturated and Saturated Collector Emitter Current vs. LED Current Document Number 83638 Rev. 1.5, 26-Oct-04 IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors tpHL - High/Low Propagation Delay - s 1000 Icb - Photocurrent - a 100 10 1 40 Vcc = 5 V 10 K Vth = 1.5 V 30 220 20 10 0 .1 .1 1 0 100 10 IF - LED Current - mA iil66_05 5 10 15 IF - LED Current - mA 20 iil66_08 Figure 5. Collector-Base Photocurrent vs. LED Current Figure 8. High to low Propagation Delay vs. Collector Load Resistance and LED Current 150 10000 100 tpLH - Low/High Propagation Delay - s V CE = 5 V 1000 ICE -Collector-emitter current mA 50 V CE = 1 V 10 1 .1 .01 10 K 125 100 2 K 75 Vcc = 5 V Vth = 1.5 V 50 25 220 K 0 .001 .1 0 10 100 5 10 15 20 IF - LED Current - mA IB - Base current - s iil66_06 0 1000 iil66_09 Figure 6. Collector-Emitter Current vs.LED Current Figure 9. Low to High Propagation Delay vs. Collector Load Resistance and LED Current HFE - Forward Gain 25000 20000 IF VCE= 5 V 15000 10000 VO tD tR tPLH 5000 VCE= 1 V 0 .1 10 1 100 tPHL 1000 tS VTH=1.5 V tF I B - Base Current - A iil66_07 Figure 7. Non-Saturated and Saturated HFE vs. LED Current Document Number 83638 Rev. 1.5, 26-Oct-04 iil66_10 Figure 10. Switching Waveform www.vishay.com 5 IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors Figure 11. Switching Schematic VCC =10 V F=10 KHz, DF=50% RL VO IF iil66_11 Package Dimensions in mm 14770 www.vishay.com 6 Document Number 83638 Rev. 1.5, 26-Oct-04 IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 4 3 2 1 5 6 7 8 .255 (6.48) .268 (6.81) ISO Method A .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .300 (7.62) typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) 10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. .018 (.46) .022 (.56) 3-9 .008 (.20) .012 (.30) i178006 Package Dimensions in Inches (mm) pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16 ISO Method A .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .300 (7.62) typ. .031(.79) .130 (3.30) .150 (3.81) 4 .018 (.46) .022 (.56) .020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27) 10 typ. 3-9 .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) i178007 Document Number 83638 Rev. 1.5, 26-Oct-04 www.vishay.com 7 IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors Option 7 Option 9 .375 (9.53) .395 (10.03) .300 (7.62) TYP. .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. www.vishay.com 8 .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18494 Document Number 83638 Rev. 1.5, 26-Oct-04 IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83638 Rev. 1.5, 26-Oct-04 www.vishay.com 9