To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corpor ation took over all the business of both
companies. Therefore, althoug h the old company name remains in t his document, it is a valid
Renesas Electronics document. W e appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electr onics Corporat ion (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
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(Note 1) “Renesas Electronics” as used in this document means Ren esas E lectro nics Corpor ation and also inclu des its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
Rev.4.00 Mar 16, 2005 page 1 of 4
1S2075(K)
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0558-0400
(Previous: ADE-208-144C)
Rev.4.00
Mar 16, 2005
Features
• Low capacitance. (C = 3.5 pF max)
• Short reverse recovery time. (trr = 8.0 ns max)
• High reliability with glass seal.
Ordering Information
Type No.
Cathode band
Mark
Package Name
Package Code
(Previous Code)
1S2075(K) Green H
DO-35 GRZZ0002ZB-A
(DO-35)
Pin Arrangement
12
H
Cathode band
1. Cathode
2. Anode
1S2075(K)
Rev.4.00 Mar 16, 2005 page 2 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage VRM 35 V
Reverse voltage VR 30 V
Peak forward current IFM 450 mA
Non-Repetitive peak forward surge current IFSM * 600 mA
Average rectified current IO 100 mA
Power dissipation Pd 250 mW
Junction temperature Tj 175 °C
Storage temperature Tstg −65 to +175 °C
Note: Within 1s forward surge current.
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF — — 0.8 V IF = 10 mA
Reverse current IR — — 100 nA VR = 30 V
Capacitance C — — 3.5 pF VR = 1 V, f = 1 MHz
Reverse recovery time trr * — — 8.0 ns IF = IR = 10 mA, Irr = 1 mA
Note: Reverse recovery time test circuit
0.1 µF
DC
Supply
Pulse
Generator
Ro = 50 ΩRin = 50 Ω
Sampling
Oscilloscope
3 kΩ
Trigger
1S2075(K)
Rev.4.00 Mar 16, 2005 page 3 of 4
Main Characteristic
1.0 10
10
1.0
0.1 100
f = 1MHz
0 0.2 0.80.6 1.00.4
10
-1
10
-2
10
-3
10
-4
1.2
Fig.1 Forward current vs. Forward voltage
Forward voltage V
F
(V)
Forward current I
F
(A)
Ta = -25
°
C
Ta = 25°C
Ta = 125°C
Ta = 75°C
010 304020 50
Ta = 75°C
Ta = 125°C
Ta = 25°C
10
–5
10
–6
10
–4
10
–7
10
–8
10
–9
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage V
R
(V)
Reverse current I
R
(A)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage V
R
(V)
Capacitance C (pF)
1S2075(K)
Rev.4.00 Mar 16, 2005 page 4 of 4
Package Dimensions
LEL
Min Nom Max
φb-0.5
φD-2.0
E--4.2
L26.0 - -
-
-
φbφD
Dimension in Millimeters
Reference
Symbol
SC-40 0.13g
MASS[Typ.]
DO-35 / DO-35VGRZZ0002ZB-A
RENESAS CodeJEITA Package Code Previous Code
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
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Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
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