AON7508
30V N-Channel AlphaMOS
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 32A
R
DS(ON)
(at V
GS
=10V) < 3.0mΩ
R
DS(ON)
(at V
GS
=4.5V) < 4.6mΩ
Application
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Drain-Source Voltage
30
G
D
S
Top View
1
2
3
4
8
7
6
5
DFN 3x3 EP
Top View Bottom View
Pin 1
V
DS
V
GS
I
DM
I
AS
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
25
100ns 36 V
A50
Avalanche energy L=0.05mH
C
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
1.5
75
2
60
W
62.5
T
C
=25°C
25
T
C
=100°C
P
DSM
W
T
A
=70°C 2
T
A
=25°C 3.1
Typ Max
V
T
C
=25°C
T
C
=100°C
128Pulsed Drain Current
C
Continuous Drain
Current
G
Power Dissipation
B
P
D
Power Dissipation
A
mJ
Avalanche Current
C
21
Continuous Drain
Current
63
26
A
T
A
=25°C I
DSM
A
T
A
=70°C
I
D
32
40
V±20Gate-Source Voltage
Drain-Source Voltage
30
Maximum Junction-to-Ambient
A
°C/W
R
θJA
30
Units
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Parameter
Rev 0: Feb. 2012
www.aosmd.com Page 1 of 6
AON7508
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.2 1.8 2.2 V
2.4 3
T
J
=125°C 3.3 4.1
3.5 4.6 mΩ
g
FS
85 S
V
SD
0.68 1 V
I
S
32 A
C
iss
1835 pF
C
oss
940 pF
C
rss
90 pF
R
g
0.7 1.5 2.3 Ω
Q
g
(10V) 29 40 nC
Q
g
(4.5V) 13.6 19 nC
Q
gs
5.8 nC
Q
gd
5.3 nC
t
D(on)
7.9 ns
t
r
4.0 ns
t
27.3
ns
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Forward Transconductance V
DS
=5V, I
D
=20A
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
SWITCHING PARAMETERS
Turn-On DelayTime
Gate Drain Charge
Total Gate Charge V
GS
=10V, V
DS
=15V, I
D
=20A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
=3
Ω
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
S
=1A,V
GS
=0V
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
mΩ
I
D
=250µA, V
GS
=0V
V
GS
=10V, I
D
=20A
Gate-Body leakage current
V
DS
=V
GS,
I
D
=250µA
V
DS
=0V, V
GS
=±20V
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
Gate Source Charge
t
D(off)
27.3
ns
t
f
6.5 ns
t
rr
19 ns
Q
rr
36.7 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
R
GEN
=3
Ω
Turn-Off Fall Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0: Feb. 2012 www.aosmd.com Page 2 of 6
AON7508
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
100
12345
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
2
4
6
8
0 5 10 15 20 25 30
RDS(ON) (mΩ)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=3V
3.5V
10V
4V
4.5V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
2
4
6
8
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev 0: Feb. 2012 www.aosmd.com Page 3 of 6
AON7508
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20 25 30
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
50
100
150
200
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
10µs
1ms
DC
RDS(ON)
TJ(Max)=150°C
T
C
=25°C
100µs
100ms
(Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Operating Area (Note F)
RθJC=2°C/W
Rev 0: Feb. 2012 www.aosmd.com Page 4 of 6
AON7508
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
10
20
30
40
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
TA=25°C
40
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
Rev 0: Feb. 2012 www.aosmd.com Page 5 of 6
AON7508
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VD C
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 0: Feb. 2012 www.aosmd.com Page 6 of 6
