700 MHz to 1000 MHz GaAs
Matched RF PA Predriver
ADL5322
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.
FEATURES
Internally matched to 50 Ω input and output
Internally biased
Operating frequency: 700 MHz to 1000 MHz
Gain: 20 dB
OIP3: 45 dBm
P1 dB: 27 dBm
Noise figure: 5 dB
3 mm × 3 mm LFCSP
Power supply: 5 V
APPLICATIONS
CDMA2000, WCDMA, and GSM base station transceivers and
high power amplifiers
FUNCTIONAL BLOCK DIAGRAM
VCC 5
2 VCC
1 VCC
ADL5322
RFIN 8
3 GND
4 RFOUT
GND 6
GND 7
BIAS CONTROL
INPUT
MATCH
OUTPUT
MATCH
06057-001
Figure 1.
GENERAL DESCRIPTION
The ADL5322 is a high linearity GaAs driver amplifier that is
internally matched to 50 Ω for operation in the 700 MHz to
1000 MHz frequency range. The amplifier, which has a gain of
20 dB, is specially designed for use in the output stage of a
cellular base station radio or as an input preamplifier in a
multicarrier base station power amplifier. Matching and biasing
are all on-chip. The ADL5322 is available in a Pb-free, 3mm ×
3 mm, 8-lead LFCSP package with an operating temperature
from −40°C to +85°C.
ADL5322
Rev. 0 | Page 2 of 12
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions..............................5
Typical Performance Characteristics ..............................................6
Basic Connections.............................................................................8
CDMA2000 Driving Application................................................8
Evaluation Board ............................................................................ 10
Outline Dimensions ....................................................................... 11
Ordering Guide .......................................................................... 11
REVISION HISTORY
7/06—Revision 0: Initial Version
ADL5322
Rev. 0 | Page 3 of 12
SPECIFICATIONS
VCC = 5 V, TA = 25°C.
Table 1.
Parameter Conditions Min Typ Max Unit
FREQUENCY RANGE 700 1000 MHz
GAIN Frequency = 850 MHz 19 20.3 21.4 dB
vs. Frequency 832 MHz to 870 MHz ±0.125 dB
vs. Temperature −40°C to +85°C ±1 dB
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB
Frequency = 900 MHz 18.6 19.9 21.1 dB
vs. Frequency 869 MHz to 894 MHz ±0.125 dB
vs. Temperature −40°C to +85°C ±1 dB
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB
Frequency = 950 MHz 18.3 19.6 20.8 dB
vs. Frequency 925 MHz to 960 MHz ±0.125 dB
vs. Temperature −40°C to +85°C ±1.1 dB
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB
P1 dB Frequency = 850 MHz 27.0 27.7 dBm
vs. Frequency 832 MHz to 870 MHz ±0.1 dBm
vs. Temperature −40°C to +85°C ±1 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.3 dBm
Frequency = 900 MHz 27.3 27.9 dBm
vs. Frequency 869 MHz to 894 MHz ±0.1 dBm
vs. Temperature −40°C to +85°C ±1 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.4 dBm
Frequency = 950 MHz 26.7 27.5 dBm
vs. Frequency 925 MHz to 960 MHz ±0.2 dBm
vs. Temperature −40°C to +85°C ±1 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.4 dBm
NOISE FIGURE Frequency = 830 MHz to 960 MHz 5 dB
INPUT RETURN LOSS Frequency = 830 MHz to 960 MHz −10 dB
OUTPUT RETURN LOSS Frequency = 830 MHz to 960 MHz −10 dB
OIP3 Carrier spacing = 1 MHz, POUT = 5 dBm per carrier
Frequency = 850 MHz 44.8 dBm
vs. Frequency 832 MHz to 870 MHz ±0.25 dBm
vs. Temperature −40°C to +85°C ±3.0 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.5 dBm
Frequency = 900 MHz 45.3 dBm
vs. Frequency 869 MHz to 894 MHz ±0.25 dBm
vs. Temperature −40°C to +85°C ±2.7 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.8 dBm
Frequency = 950 MHz 44.4 dBm
vs. Frequency 925 MHz to 960 MHz ±0.25 dBm
vs. Temperature −40°C to +85°C ±2.2 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.8 dBm
POWER SUPPLY
Supply Voltage 4.75 5 5.25 V
Supply Current POUT = 5 dBm 320 mA
Operating Temperature −40 +85 °C
ADL5322
Rev. 0 | Page 4 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage, VPOS 6 V
Input Power (re: 50 Ω) 18 dBm
Equivalent Voltage 1.8 V rms
θJC (Soldered) 28.5°C/W
Maximum Junction Temperature 150°C
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Soldering Temperature 260°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
ADL5322
Rev. 0 | Page 5 of 12
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
PIN 1
INDICATOR
ADL5322
5 VCC
VCC 2
VCC 1 8 RFIN
GND 3
RFO UT 4
6 GND
7 GND
TOP V IEW
(No t to Scal e)
06057-002
Figure 2. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. Mnemonic Description
1, 2, 5 VCC Positive 5 V Supply Voltage. Bypass these three pins with independent power supply decoupling
networks (100 pF, 10 nF, and 10 μF).
3, 6, 7 GND Device Ground.
4 RFOUT RF Output. Internally matched to 50 Ω.
8 RFIN RF Input. Internally matched to 50 Ω.
N/A EP Exposed Paddle. Connect to ground plane via a low impedance path.
Table 4. S-Parameters
Frequency ADL5322 (1, 1) ADL5322 (1, 2) ADL5322 (2, 1) ADL5322 (2, 2)
700.0 MHz 0.210/109.457 0.002/97.018 +11.221/−158.622 0.436/150.470
720.0 MHz 0.195/104.437 0.002/93.284 +11.108/−166.579 0.392/145.211
740.0 MHz 0.179/99.101 0.002/87.856 +11.013/−174.596 0.345/137.443
760.0 MHz 0.165/93.363 0.002/86.137 10.931/177.282 0.295/133.051
780.0 MHz 0.151/86.953 0.002/78.668 10.856/169.006 0.242/125.612
800.0 MHz 0.138/79.928 0.002/74.072 10.781/160.613 0.187/116.434
820.0 MHz 0.125/71.950 0.002/68.940 10.698/152.065 0.130/102.897
840.0 MHz 0.114/62.829 0.002/62.269 10.605/143.342 0.079/76.154
860.0 MHz 0.103/52.162 0.002/56.742 10.493/134.489 0.061/18.090
880.0 MHz 0.095/39.531 0.002/56.696 10.361/125.433 +0.098/−26.962
900.0 MHz 0.090/24.952 0.003/43.549 10.210/116.239 +0.153/−46.741
920.0 MHz 0.088/9.188 0.003/37.254 10.033/106.889 +0.211/−58.300
940.0 MHz +0.090/−7.350 0.003/29.904 9.837/97.326 +0.269/−66.606
960.0 MHz +0.095/−23.642 0.003/24.334 9.614/87.600 +0.324/−73.265
980.0 MHz +0.104/−39.131 0.003/16.521 9.364/77.609 +0.376/−78.914
1.000 GHz +0.115/−53.477 0.003/8.139 9.081/67.342 +0.424/−83.911
ADL5322
Rev. 0 | Page 6 of 12
TYPICAL PERFORMANCE CHARACTERISTICS
22.0
17.5
800 1000
FREQUENCY (M Hz )
GAIN (dB)
850 900 950
21.5
21.0
20.5
20.0
19.5
19.0
18.5
18.0
TE M P = –40°C
TEMP = +25°C
TE MP = + 85°C
06057-003
Figure 3. Gain vs. Frequency, VCC = 5 V, TA = −40°C, +25°C, and +85°C
29.0
26.0
800 1000
FREQUENCY (M Hz )
P1dB (dBm)
850 900 950
28.5
28.0
27.5
27.0
26.5
TE M P = –4 0°C
TEMP = +25°C
TEMP = +85°C
06057-004
Figure 4. P1 dB vs. Frequency, VCC = 5 V, TA = −40°C, +25°C, and +85°C
47
41
800 1000
FREQUENCY (M Hz )
OIP3 (dBm)
850 900 950
46
45
44
43
42
TE M P = –40° C
TEMP = +25°C
TE M P = +85° C
06057-005
Figure 5. OIP3 vs. Frequency, VCC = 5 V, TA = −40°C, +25°C, and +85°C
5.6
4.0
700 1000
FREQUENCY (M Hz )
NF (dB)
800 900
5.4
5.2
5.0
4.8
4.6
4.4
4.2
06057-006
Figure 6. Noise Figure vs. Frequency, Multiple Devices, VS = 5 V, TA = 25°C
28.4
26.4
800 1000
FREQUENCY (M Hz )
P1dB (dBm)
850 900 950
28.2
28.0
27.8
27.6
27.4
27.2
27.0
26.8
26.6
V
CC
= 5. 25V
V
CC
= 5V
V
CC
= 4. 75V
06057-007
Figure 7. P1 dB vs. Frequency, VCC = 4.75 V, 5 V, and 5.25 V, TA = 25°C
46.5
43.0
800 1000
FREQUENCY (M Hz )
OIP3 (dBm)
850 900 950
46.0
45.5
45.0
44.5
44.0
43.5
V
CC
= 5. 25V
V
CC
= 5V
V
CC
= 4. 75V
06057-008
Figure 8. OIP3 vs. Frequency, VCC = 4. 75 V, 5 V, and 5.25 V, TA = 25°C
ADL5322
Rev. 0 | Page 7 of 12
6
044.1
OIP3 (dBm)
FREQUENCY
44.3 44.5 44.7 44.9 45.1 45.3 45.5 45.7
5
4
3
2
1
06057-009
Figure 9. Distribution of OIP3 at 850 MHz
–
6
–26
0.70 1.00
FREQUENCY ( GHz)
ADL5322 [ 1, 1] ( dB)
ADL5322 [ 2, 2] ( dB)
0.85 0.900.75 0.80 0.95
–14
–16
–18
–20
–22
–24
–8
–10
–12
06057-010
S22
S11
Figure 10. Input S11 and Output S22 Return Loss vs. Frequency
06057-011
7
043.6
OIP3 (dBm)
FREQUENCY
43.8 44.0 44.2 44.4 44.6 44.8 45.0 45.2
5
6
4
3
2
1
Figure 11. Distribution of OIP3 at 950 MHz
ADL5322
Rev. 0 | Page 8 of 12
BASIC CONNECTIONS
Figure 14 shows the basic connections for operating the
ADL5322. Each of the three power supply lines should be
decoupled with 10 μF, 10 nF, and 100 pF capacitors. Pin 3, Pin 6,
Pin 7, and the exposed paddle under the device should all be
connected to a low impedance ground plane. If multiple ground
planes are being used, these should be stitched together with
vias under the device to optimize thermal conduction. See
recommended land pattern in Figure 12.
06057-013
Figure 12. Recommended Land Pattern
CDMA2000 DRIVING APPLICATION
Figure 13 shows a plot of the spectrum of an ADL5323 driving
at 4-carrier CDMA2000 signal at 0 dBm per carrier (total
carrier power = 6 dBm), centered at 880 MHz. At 750 kHz
and 1.98 MHz offset, adjacent channel power ratios of −59 dBc
and −84 dBc (measured in 30 kHz with respect to the 1.22 MHz
carrier) are observed. At 4 MHz carrier offset, −73 dBc is
measured in a 1 MHz bandwidth (−133 dBm/Hz). Note that
the spectrum of the four carriers is slightly rounded due the
frequency response of the cavity-tuned filter that was used to
filter out the noise and distortion of the source signal.
–
10
–110 CENT ER 881. 875M Hz SPAN 10MHz
(dBm)
1MHz/
–50
–60
–70
–80
–90
–100
–20
–30
–40
RBW = 30kHz
VBW = 3 00kHz
SWT = 2s
RF ATT = 20dB
MI X E R = –10dB m
CH PW R = 0.26d Bm
ACP UP = –59.33d B
ALT1 UP = –84 .35d B
ALT2 UP = –72 .74d B
06057-014
Figure 13. Spectrum of 4 Adjacent CDMA2000 Carriers Centered at 880 MHz;
Total Carrier Power = 6 dBm (0 dBm per Carrier)
AGNDAGNDAGND
AGND
VCC
RFIN
RFOUT
ADL5322
VCC
VCC
GND
GND
RFIN VCC
GND
RFOUT
C4
100pF
EP
8
7
6
5
1
2
3
4AGND
C2
100pF
C1
10µF C3
10nF
C5
100pF
VCC
VCC
AGNDAGNDAGND
C11
10µF
C9
100pF C10
10nF
AGNDAGNDAGND
C8
10µF
C6
100pF C7
10nF
0
6057-012
Figure 14. Basic Connections
ADL5322
Rev. 0 | Page 9 of 12
Figure 15 shows how ACP varies with output power level. The
close-in ACP is a function of the signal coding and is unaffected
by output headroom at these power levels. The ACP measured
at 1.98 MHz carrier offset is −72 dBc at 10 dBm output power
(12 dB below the required 60 dBc). At 4 MHz carrier offset, the
noise and distortion measured in a 1 MHz bandwidth is −75 dBm
at 6 dBm (total) output power (0 dBm per carrier). In a 50 dBm
transmitter, this corresponds to an antenna-referred output
power of −31 dBm (1 MHz), which is 18 dB below what is
required by the CDMA2000 standard.
–
30
–100
–10
OUTPUT P OWE R ( dBm)
ACP1 AND ACP2 – 30kHz RBW (dBc)
ACP3 – 1MHz RBW (dBm)
10
–50
–40
–60
–70
–80
–90
–
30
–100
–50
–40
–60
–70
–80
–90
–8 –6 –4 –2 0 2 4 6 8
ACP1 (dBc) – 750k Hz OF FSE T – 30kHz RBW
ACP3 (dBm) – 4M Hz OFFSET – 1MHz RBW
ACP2 (dBc) – 1.98MHz OFFSET – 30kHz RBW
06057-015
Figure 15. CDMA2000 ACP vs. Output Power per Carrier; 4 Adjacent Carriers
ADL5322
Rev. 0 | Page 10 of 12
EVALUATION BOARD
Figure 17 shows the schematic of the ADL5322 evaluation
board. The board is powered by a single supply in the 4.75 V to
5.25 V range. The power supply is decoupled on each of the
three power supply pins by 10 μF, 10 nF, and 100 pF capacitors.
See Table 5 for exact evaluation board component values. Note
that all three VCC pins (Pin 1, Pin 2, and Pin 5) should be
independently bypassed as shown in Figure 17 for proper
operation.
06057-016
Figure 16. Evaluation Board Component Side View
Table 5. Evaluation Board Components
Component Function Default Value
DUT1 Driver amplifier ADL5322
C1, C12, C16 Low frequency bypass capacitors 10 μF, 0603
C3, C11, C17 Low frequency bypass capacitors 10 nF, 0402
C2, C10, C18 High frequency bypass capacitors 100 pF, 0402
C8, C9, C13, C14, R3 Open Open, 0402
R2, R4 AC coupling capacitors 100 pF, 0402
AGNDAGNDAGND
AGND
AGND
AGND
VCC
RFIN
RFOUT
ADL5322/
ADL5323
VCC
VCC
GND
GND
RFIN VCC
GND
RFOUT
R2
100pF DUT1
VCCVCC
VCC
GND
8
7
6
5
1
2
3
4AGND
C2
100pF
C1
10µF C3
10nF
AGNDAGND
C8
OPEN C9
OPEN
R4
100pF
VCC
TP2
VCC
SNS1
AGNDAGNDAGND
C16
10µF
C18
100pF
TP1
C17
10nF
AGNDAGNDAGND
C12
10µF
C10
100pF C11
10nF
AGNDAGND
C13
OPEN C14
OPEN
R3
OPEN
W1
06057-017
Figure 17. Evaluation Board Schematic
ADL5322
Rev. 0 | Page 11 of 12
OUTLINE DIMENSIONS
1
0.50
BSC
0.60 MAX PIN 1
INDICATO
R
1.50
REF
0.50
0.40
0.30
2.75
BSC SQ
TOP
VIEW
12° MAX 0.70 MAX
0.65 TYP
SEATING
PLANE
PIN 1
INDICATOR
0.90 MAX
0.85 NOM
0.30
0.23
0.18
0.05 MAX
0.01 NOM
0.20 REF
1.89
1.74
1.59
4
1.60
1.45
1.30
3.00
BSC SQ
5
8
Figure 18. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD]
3 mm × 3 mm Body, Very Thin, Dual Lead
(CP-8-2)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding Ordering Quantity
ADL5322ACPZ-R71−40°C to +85°C 8-Lead LFCSP_VD, 7" Tape and Reel CP-8-2 OP 1500
ADL5322ACPZ-WP1−40°C to +85°C 8-Lead LFCSP_VD, Waffle Pack CP-8-2 OP 50
ADL5322-EVAL Evaluation Board 1
1 Z = Pb-free part.
ADL5322
Rev. 0 | Page 12 of 12
NOTES
©2006 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D06057-0-7/06(0)
