FDB1D7N10CL7 - ON SEMICONDUCTOR

April, 2018 − Rev. 2

1Publication Order Number:

FDB1D7N10CL7/D

FDB1D7N10CL7

N-Channel Shielded Gate

POWERTRENCH) MOSFET

100 V, 268 A, 1.7 mW

Description

This N−Channel MOSFET is produced using ON Semiconductor’s

advanced POWERTRENCH process that incorporates Shielded Gate

technology. This process has been optimized to minimize on−state

resistance and yet maintain superior switching performance with best

in class soft body diode.

Features

•Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A

•Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A

•Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A

•Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A

•50% Lower Qrr than Other MOSFET Suppliers

•Lowers Switching Noise/EMI

•MSL1 Robust Package Design

•100% UIL Tested

Applications

•Industrial Motor Drive

•Industrial Power Supply

•Industrial Automation

•Battery Operated Tools

•Battery Protection

•Solar Inverters

•UPS and Energy Inverters

•Energy Storage

•Load Switch

MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)

Symbol Parameter Ratings Unit

VDS Drain to Source Voltage 100 V

VGS Gate to Source Voltage ±20 V

IDDrain Current

Continuous (TC = 25°C) (Note 5)

Continuous (TC = 100°C) (Note 5)

Pulsed (Note 4)

268 A

190

1390

EAS Single Pulsed Avalanche Energy

(Note 3)

595 mJ

PDPower Dissipation

TC = 25°C

TA = 25°C (Note 1a)

250 W

3.8

TJ, TSTG Operating and Storage Temperature

Range

−55 to +175 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

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this data sheet.

ORDERING INFORMATION

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D (Pin4, tab)

S (Pin2, 3, 5, 6, 7)

G (Pin1)

MARKING DIAGRAM

N−Channel MOSFET

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

FDB1D7N10CL7 = Specific Device Code

$Y&Z&3&K

FDB

1D7N10CL7

VDS ID MAX rDS(on) MAX

100 V 268 A 1.7 mΩ

1. Gate

2. Source

3. Source

5. Source

6. Source

7. Source

4. Drain

FDB1D7N10CL7

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THERMAL CHARACTERISTICS

Symbol Parameter Ratings Unit

RqJC Thermal Resistance, Junction to Case (Note 1) 0.6 _C/W

RqJA Thermal Resistance, Junction to Ambient (Note 1a) 40

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 − − V

DBVDSS/DTJBreakdown Voltage Temperature

Coefficient

ID = 250 μA, referenced to 25°C−57 −mV/_C

IDSS Zero Gate Voltage Drain Current Zero

Gate Voltage Drain Current

VDS = 80 V, VGS = 0 V − − 1mA

IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V − − ±100 nA

ON CHARACTERISTICS

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 700 μA 2.0 3.1 4.0 V

VGS(th)/DTJGate to Source Threshold Voltage

Temperature Coefficient

ID = 700 μA, referenced to 25°C− −9−mV/_C

RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 100 A −1.5 1.75 mW

VGS = 12 V, ID = 100 A −1.4 1.7

VGS = 15 V, ID = 100 A −1.33 1.65

VGS = 6 V, ID = 63 A −2.2 4.4

VGS = 10 V, ID = 100 A, TJ= 150°C−2.65 3.1

gFS Forward Transconductance VDS = 5 V, ID = 100 A −237 −S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1 MHz −8285 11600 pF

Coss Output Capacitance −5025 7035 pF

Crss Reverse Transfer Capacitance −50 80 pF

RgGate Resistance 0.1 0.8 1.6 Ω

SWITCHING CHARACTERISTICS

td(on) Turn−On Delay Time VDD =50V, I

D= 100 A,

VGS =10V, R

GEN =6Ω

−39 63 ns

trRise Time −33 53 ns

td(off) Turn−Off Delay Time −85 136 ns

tfFall Time −36 58 ns

QgTotal Gate Charge VGS = 0 V to 10 V −116 163 nC

QgTotal Gate Charge VGS = 0 V to 6 V VDD = 50 V,

ID 100 A

−74 104 nC

Qgs Gate to Source Gate Charge ID = 100 A −37 −nC

Qgd Gate to Drain “Miller” Charge −24 −nC

Qoss Output Charge VDD = 50 V, VGS = 0 V −333 −nC

SOURCE-DRAIN DIODE CHARACTERISTICS

ISContinuous Drain to Source Diode Forward Current − − 268 A

ISM Pulsed Drain to Source Diode Forward Current − − 1390 A

VSD Source to Drain Diode Forward

Voltage

VGS = 0 V, IS = 100 A (Note 2) −0.9 1.2 V

FDB1D7N10CL7

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol UnitMaxTypMinTest ConditionsParameter

SOURCE-DRAIN DIODE CHARACTERISTICS

trr Reverse Recovery Time IF = 50 A, di/dt = 300 A/μs−63 101 ns

Qrr Reverse Recovery Charge −186 298 nC

trr Reverse Recovery Time IF = 50 A, di/dt = 1000 A/μs−82 132 ns

Qrr Reverse Recovery Charge −869 1390 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.

a) 40°C/W when mounted on a 1 in2 pad of 2 oz copper.

b) 62.5°C/W when mounted on a minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. EAS of 595 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 63 A, VDD = 90 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 91 A.

4. Pulsed Id please refer to Figure “Forward Bias Safe Operating Area” for more details.

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &

electro−mechanical application board design.

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Reel Size Tape Width Quantity

FDB1D7N10CL7 FDB1D7N10CL7 D2−PAK−7L 330 mm 24 mm 800 Units

FDB1D7N10CL7

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TYPICAL CHARACTERISTICS

(TJ = 25°C unless otherwise noted)

Figure 1. On-Region Characteristics Figure 2. Normalized On−Resistance vs. Drain

Current and Gate Voltage

Figure 3. Normalized On−Resistance

vs. Junction Temperature

Figure 4. On−Resistance vs. Gate to Source Voltage

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Volta

e vs. Source Current

VDS, Drain-Source Voltage (V)

ID, Drain Current (A)

TJ, Junction Temperature (5C) VGS, Gate to Source Voltage (V)

RDS(on), Drain to Source

ON−Resistance (mW)

VSD, Body Diode Forward Voltage (V)

IS, Reverse Drain Current (A)

VGS, Gate to Source Voltage (V)

ID, Drain Current (A)

012345

120

160

200

240

280

320

VGS = 5.5 V

VGS = 10 V

VGS = 6 V

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

VGS = 5 V

VGS = 6.5 V

0 40 80 120 160 200 240 280 320

VGS = 10 V

VGS = 5 V

VGS = 6 V

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

VGS = 6.5 V

VGS = 5.5 V

−75 −50 −25 0 25 50 75 100 125 150 175

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = 100 A

VGS = 10 V

3691215

120

160

200

240

280

320

TJ = 175 oC

VDS = 5 V

TJ = −55oC

TJ = 25 oC

TJ= 175 oC

VGS = 0 V

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

100

320

Normalized Drain to

Source ON−Resistance

Normalized Drain to

Source ON−Resistance

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

TJ = 25 oC

TJ = −55 oC

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

TJ= 150 oC

TJ= 25 oC

ID= 100 A

23 45 67

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TYPICAL CHARACTERISTICS (Continued)

(TJ = 25°C unless otherwise noted)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain

to Source Voltage

Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current

vs. Case Temperature

Figure 11. Forward Bias Safe Operating Area

Qg, Gate Characteristics

VGS, Gate to Source Voltage

VDS, Drain to Source Voltage (V)

Capacitance (pF)

TC, Case Temperature (5C)

ID, Drain Current (A)

VDS, Drain to Source Voltage [V]

ID, Drain Current (A)

tAV, Time in Avalanche (ms)

IAS, Avalanche Current (A)

Figure 12. Single Pulse Maximum Power Dissipation

t, Pulse Width (sec)

P(PK), Peak Transient Power (W)

0.1 1 10 100

100

1000

10000

100000

f = 1 MHz

VGS = 0 V

Crss

Coss

Ciss

0.001 0.01 0.1 1 10 100 1000

100

200

TJ= 25 oC

TJ= 150 oC

0.1 1 10 100 400

0.1

100

1000

10000

20000

1ms

5ms

CURVE BENT TO

MEASURED DATA

10 ms

100 ms

10 ms

1 ms

100 ms

THIS AREA IS

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

RqJC = 0.6 oC/W

TC = 25 oC

10−510−410−310−210−11

100

1000

10000

100000

SINGLE PULSE

RqJC = 0.6 oC/W

TC = 25 oC

25 50 75 100 125 150 175

100

150

200

250

300

VGS = 6 V

RqJC = 0.6 oC/W

VGS = 10 V

ID= 100 A

VDD = 75 V

VDD = 50 V

VDD = 25 V

0 306090120

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TYPICAL CHARACTERISTICS (Continued)

(TJ = 25°C unless otherwise noted)

Figure 13. Normalized Max Junction to Case Transient Thermal Response Curve

t, Rectangular Pulse Duration (s)

r(t), Normalized

Transient Thermal Resistance

0.001

0.01

0.1

10−410−310−210−1100

10−5

SINGLE PULSE

DUTY CYCLE−DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES:

ZqJC(t) = r(t) x RqJC

RqJC = 0.6 oC/W

Duty Cycle, D = t1 / t2

Peak TJ = PDM x ZqJC(t) + TC

PDM

Notes:

ZqJC(t) = r(t) × RqJC

RqJC = 0.6°C/W

Peak TJ = PDM × ZqJC(t) + TC

Duty Cycle, D = t1 / t2

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States

and/or other countries.

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A = Assembly Location

Y = Year

WW = Work Week

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