MCD56-12io8B
3 1 25
Phase leg
Thyristor \ Diode Module
Part number
MCD56-12io8B
Backside: isolated
TAV
T
V V1.24
RRM
60
1200
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-240AA
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
4800
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20200701cData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCD56-12io8B
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.26
R0.45 K/W
min.
60
VV
200T = 25°C
VJ
T = °C
VJ
mA5V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
222 WT = 25°C
C
100
1200
forward voltage drop
total power dissipation
Conditions
1.57
T = 25°C
VJ
125
V
T0
V0.85T = °C
VJ
125
r
T
3.7 mΩ
V1.24T = °C
VJ
I = A
T
V
100
1.62
I = A200
I = A200
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1200T = 25°C
VJ
IA94
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
125
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
74
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
1.50
1.62
8.13
7.87
kA
kA
kA
kA
1.28
1.38
11.3
10.9
1200
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
150 A
T
P
G
= 0.45
di /dt A/µs;
G
=0.45
DRM
cr
V = ⅔ V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
100 mA
T = °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
125
latching current
T = °C
VJ
450 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 150 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 60 A
T
100
R
thCH
thermal resistance case to heatsink
K/W
Rectifier
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.2
IXYS reserves the right to change limits, conditions and dimensions. 20200701cData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCD56-12io8B
Ratings
MCMA85PD1200TB TO-240AA-1B 1200
Package
T
op
°C
M
D
Nm4
mounting torque
2.5
T
VJ
°C125
virtual junction temperature
-40
Weight g81
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
M
T
Nm4
terminal torque
2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
100-40
terminal to terminal
TO-240AA
Similar Part Package Voltage class
MCMA65PD1200TB TO-240AA-1B 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCD56-12io8B 457701Box 36MCD56-12io8BStandard
4800
ISOL
T
stg
°C125
storage temperature
-40
4000
threshold voltage
V0.85
mΩ
V
0 max
R
0 max
slope resistance *
2.5
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
°C
* on die level
125
IXYS reserves the right to change limits, conditions and dimensions. 20200701cData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCD56-12io8B
3 1 25
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20200701cData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCD56-12io8B
0 25 50 75 100 125 150
T
a
[°C]
T
C
[°C]
t [ms]
t [s]
0.01 0.1 1
0
200
400
600
800
1000
1200
011
10
3
10
4
10
5
0 25 50 75 100 125 150
0
20
40
60
80
100
1
20
I
TSM
[A]
I
TAVM
[A]
0 20 40 60 80
0
20
40
60
80
100
120
P
tot
[W]
I
TAVM
[A]
0 25 50 75 100 125 1500 40 80 120 160
0
100
200
300
400
500
I
2
dt
[A
2
s]
T
VJ
= 45°C
180 ° sin
120 °
60°
30°
DC
T
VJ
= 125°C
P
tot
[W]
I
dAVM
[A] T
a
[°C]
Fig. 1 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms) Fig. 3 Max. forward current
at case temperature
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
Fig. 5 Gate trigger characteristics
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
Fig. 7 Gate trigger delay time
180 ° sin
120 °
60°
30°
DC
0.01 0.1 1 10
0.1
1
10
100
I
G
[A]
I
G
[mA]
T
VJ
= 25°C
t
gd
[µs]
limit
typ.
T
VJ
= 45°C
T
VJ
= 125°C
I
TSM
= 50 Hz
I
FSM
= 80% V
RRM
R
thKA
K/W
0.5
0.25
0.3
0.4
0.15
0.2
0.1
0.6
10
0
10
1
10
2
10
3
10
4
0.1
1
10
6
1
34
5
1: I
GT
,T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
V
G
[V]
6: P
GM
= 10 W
5: P
GM
= 5 W
4: P
GAV
= 0.5 W
I
GD
,T4= 125°C
2
V
R
= 0 V
R
thKA
K/W
0.8
1
1.2
1.5
2
2.5
3
4
B6
Circuit
3x MCC56 or
3x MCD56
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20200701cData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCD56-12io8B
0 20 40 60 80 100 120
0
100
200
300
400
500
t [s]
10
-2
10
-1
10
0
10
1
0.0
0.2
0.4
0.6
0.8
Z
thJC
[
K/W]
I
RMS
[A]
P
tot
[
W]
0 25 50 75 100 125 150
T
a
[°C]
10
-2
10
-1
10
0
10
1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Z
thJK
[K/W]
t [s]
DC
180°
120°
60°
30°
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)
DC
180°
120°
60°
30°
0.4
0.3
0.25
R
thKA
K/W
0.5
0.1
0.15
0.2
0.6
R
thJC
for various conduction angles d:
d R
thJC
[K/W]
DC 0.450
180° 0.470
120° 0.490
60° 0.505
30° 0.520
Constants for Z
thJC
calculation:
i R
thi
[K/W] t
i
[s]
1 0.014 0.0150
2 0.026 0.0095
3 0.410 0.1750
R
thJK
for various conduction angles d:
d R
thJK
[K/W]
DC 0.650
180° 0.670
120° 0.690
60° 0.705
30° 0.720
Constants for Z
thJK
calculation:
i R
thi
[K/W] t
i
[s]
1 0.014 0.0150
2 0.026 0.0095
3 0.410 0.1750
4 0.200 0.6700
Circuit
W3
3x MCC56 or
3x MCD56
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20200701cData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved