ADVANCED APT20M22LVR POWER TECHNOLOGY 200V 100A 0.022Q me) ida Oke ae Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching * 100% Avalanche Tested Lower Leakage - Popular TO-264 Package G i) MAXIMUM RATINGS All Ratings: Tg = 25C unless otherwise specified. Symbol | Parameter APT20M22LVR UNIT Voss Drain-Source Voltage 200 Volts Ib Continuous Drain Current @ Tg = 25C 100 Amps lou Pulsed Drain Current 400 Vas Gate-Source Voltage Continuous +30 Vol olts Vasm Gate-Source Voltage Transient +40 p Total Power Dissipation @ T. = 25C 520 Watts p Linear Derating Factor 4.16 wre Ty T gt | Operating and Storage Junction Temperature Range -55 to 150 C Ty, Lead Temperature: 0.063" from Case for 10 Sec. 300 lAR Avalanche Current O (Repetitive and Non-Repetitive) 100 Amps EaR Repetitive Avalanche Energy O 50 mJ Eas Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT BV sg | Drain-Source Breakdown Voltage (Vag = OV, I, = 250A) 200 Volts lyon) | On State Drain Current @ (V5 > lyon) X Rosiony Max: Vgg = 10V) 100 Amps Roscon) Drain-Source On-State Resistance @ (Vag = 10V, 0.5 loicont) 0.022 | Ohms Zero Gate Voltage Drain Current (Vos = Vase? Vas = 0V) 95 A PSS | Zero Gate Voltage Drain Current (Vi, = 0.8 Vogg. Vag = OV, Tg = 125C) 250 | lass Gate-Source Leakage Current (Vag = +30V, Vig = OV) +100 nA Vesith) Gate Threshold Voltage (Vy = Vag, Ip = 2.5mA) 2 4 Volts GA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 17 Ad USA ( APT Website - http:/www.advancedpower.com } 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadra Nord F-33700 Merignac - France Phone: (33) 557921515 FAX: (33) 5 56 47 97 61 050-5544 Rev B 050-5544 Rev B DYNAMIC CHARACTERISTICS APT20M22LVR Symbol | Characteristic Test Conditions MIN TYP MAX UNIT Cis Input Capacitance Vg = OV 8500 | 10200 oss Output Capacitance Vog = 25V 1950 | 2730 pF C., | Reverse Transfer Capacitance f= 1 MHz 560 840 Q, Total Gate Charge Vag = 10V 290 435 Qgs Gate-Source Charge Vop = 0.5 Voss 66 100 nc Qo Gate-Drain ("Miller") Charge ID= lofcont] @ 25C 120 180 ton) | Turn-on Delay Time Veg = 15V 16 32 t. Rise Time Vop = 9-5 Voss 25 50 ns tyoty | Turn-off Delay Time Ib = lopcomty @ 25C 48 72 t, | Fall Time Rg = 0.62 5 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT Is Continuous Source Current (Body Diode) 100 lou Pulsed Source Current O (Body Diode) 400 Amps Vsp Diode Forward Voltage @ (Vas = O*V, Is = lorcont)) 1.3 Volts tr Reverse Recovery Time (I, = lorcont dl/at = 100A/us) 330 ns tr Reverse Recovery Charge (I, = lotcontp dl./dt = 100A/ps) 5.8 uC THERMAL CHARACTERISTICS Symbol | Characteristic MIN TYP MAX UNIT Rojc | Junction to Case 0.24 CAN Roja | Junction to Ambient 40 @ Repetitive Rating: Pulse width limited by maximum T; Pulse Test: Pulse width < 380 pS, Duty Cycle < 2% See MIL-STD-750 Method 3471 @ Starting Tj = +25C, L = 500yH, Re = 252, Peak IL = 100A The maximum current is limited by lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.3 = S O14 O 9 0.05 < a lu a = z = 0.01 oc Lu = 0.005 2 SINGLE PULSE 2 N 0.004 10 104 10 betp | Duty Factor D = itp Peak Ty =Ppm x Zocot+Teo 102 107 1.0 10 RECTANGULAR PULSE DURATION (SECONDS ) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Ip DRAIN CURRENT (AMPERES) Ip DRAIN CURRENT (AMPERES) Ip, DRAIN CURRENT (AMPERES) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE Rpg(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) APT20M22LVR V 7V, 8V, 10V & 15V 200 160 120 80 40 4V 0 0 20 40 60 80 100 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS " r= Ty = 425C t Wty Ty =4+125C + Jet 1] 160 Vpg> Ip (ON) x Rpg (ON)MAX. 120 250ySEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 Ty =+125C 40 t= ff Ty = +25C p15 = -55C ; A 0 2 4 6 8 Vag: GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 100 80 60 40 20 0 25 50 75 100 125 150 Tg, CASE TEMPERATURE (C) 25 [p= 05 |p [Cont] Veg= 10V 2.0 1.5 1.0 0.5 0.0 0 -25 0 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 200 160 120 80 5V 40 Ip DRAIN CURRENT (AMPERES) 4.5V 4V 0 0 1 2 3 4 5 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.4 Veg = 10V @ 05 |, [Cont] 1.3 1.2 14 1.0 0.9 Rpg(ON), DRAIN-TO-SOURCE ON RESISTANCE 08 200 250 300 50 100 150 Ip, DRAIN CURRENT (AMPERES) FIGURE 5, R,,(ON) vs DRAIN CURRENT 2 5 am o a oo BV gg, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) o a 0.90 5 -25 0 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 a ua 1.0 0.9 0.8 0.7 Veg(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.6 0 -25 O 25 50 75 100 125 150 Tg, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5544 Rev B 050-5544 Rev B 500 10s OPERATION HERE _~ LIMITED BY Ros {ON} tt 100uS in Wi 100 => = 50 1ms kK Zz lu tr Da 3 40 10mS 2 5 Tc =+25C 100mS a Ty =+150C a SINGLE PULS DC 1 1 5 10 50 100 200 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 'b = 'b [Cont] Vpg=40V Vpg=100V Veg GATE-TO-SOURCE VOLTAGE (VOLTS) 0 0 100 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 300 400 500 APT20M22LVR 30,000 10,000 5,000 1,000 C, CAPACITANCE (pF) 500 100 oy 1 1 10 50 Vos: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 400 Ty =+150C Ty =+25C 100 10 Iba REVERSE DRAIN CURRENT (AMPERES) { 0 0.4 0.8 1.2 1.6 2.0 Vgp: SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-264 Package Outline 4.60 (.181) 7 y 5.21 (.205) < 19.51 (768) 1.80 (.071) | 20.50 (.807) 7] > <_ 2.01 (.078) k | 3.10 (.122) L 3.48 (137) Lf _ y aN e e L 5.79 (.228) 7 | 6.20 (.244) TE - - @ 25.48 (1.003) a 26.49 (1.043) A 2.29 (.090) 2.29 (.090) | P 2.69 (.106) 2.69 (.106) 19.81 (.780) 2139 (842) | Gate i Drain YO Source ; 0.48 (.019) 276,290) | < 0/84 (033) 1.30 (.051) 2.59 (.102) 2.79 (.110) a 3.00 (.118) 3.18 (125) 5.45 (.215) BSC 2-Ples. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058