TEMIC Siliconix DG408/409 8-Ch/Dual 4-Ch High Performance CMOS Analog Multiplexers Features Benefits Applications Low On-Resistancerpgjon): 100 Q Reduced Switching Errors @ Data Acquisition Systems Low Charge InjectionQ: 20 pC Reduced Glitching Audio Signal Routing Fast Transition Timetypans: 160 ns Improved Data Throughput @ ATE Systems Low PowerIsyppry: 10 pA Reduced Power Consumption @ Battery Powered Systems Single Supply Capability Increased Ruggedness @ High Rel Systems 44-V Supply Max Rating @ Superior to DG508/509A @ Single Supply Systems e Description The DG408 is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a 3-bit binary address (Ag, Ay, Ag). The DG409 is a dual 4-channel differential analog multiplexer designed to connect one of four differential inputs to a common dual output as determined by its 2-bit binary address (Apo, Ai). Break-before-make switching action protects against momentary crosstalk between adjacent channels. An on channel conducts current equally well in both directions. In the off state each channel blocks voltages up to the power supply rails. An enable (EN) function allows the user to reset the multiplexer/demultiplexer to all switches off for stacking several devices. All Wide Supply Ranges (+5 Vto +20V) Medical Instrumentation control inputs, address (Ax) and enable (EN) are TTL compatible over the full specified operating temperature range. Applications for the DG408/409 include high speed data acquisition, audio signal switching and routing, ATE systems, and avionics. High performance and low power dissipation make them ideal for battery operated and remote instrumentation applications. Designed in the 44-V silicon-gate CMOS process, the absolute maximum voltage rating is extended to 44 V. Additionally, single supply operation is also allowed. An epitaxial layer prevents latchup. For additional information please see App Note AN201 and Technical TA201. Functional Block Diagrams and Pin Configurations DG408 Dual!-In-Line and SOIC Gb td * EN [2 | IDecoders/Drivers| 15] Ag v- [3 | 4] GND 31 RH 13] V+ 8, [sot ft fn] Ss S83 [s;-t +1 aii] S6 S4 Ho aof ~li0] Ss D [s] Hit] Ss Top View DG409 Dual-In-Line and SOIC ~ oh id EN [ae GND Bl + 1 ta] Sta [b+ 4133] Sip - [s|-t rl] Sop 3a [6 et a1] S3p Sda [7p alo] S4b Da [s| Lo | Dp Top View P-32167Rev. C (11/15/94) Mm 6254735 O0el4e? SHODG408/409 TEMIC Siliconix Functional Block Diagrams and Pin Configurations (Contd) Truth Table DG408 Truth Table DG409 On Ag Ai Ao EN Switch Ay Ao EN On Switch D4 xX xX 0 None x Xx 0 None 0 0 0 1 1 0 0 1 1 0 0 1 1 0 1 1 2 0 1 0 1 1 0 1 3 0 1 1 1 1 1 1 4 1 0 0 1 1 0 1 1 Logic 0 = Var.s 0.8V Logic 1 = Vay.2 2.4V 1 1 0 1 X = Don't Care 1 1 1 1 Ordering Information DG408 Ordering Information DG409 Temp Range Package Part Number Temp Range Package Part Number 16-Pin Plastic DIP | DG408DJ 16-Pin Plastic DIP_ | DG409DJ ~40 to 85C 40 to 85C 16-Pin SOIC DG408DY 16-Pin SOIC DG409DY DG408AK DG409AK 16-PinCerDIP | DG408AK/883 16-PinCerDIP | DG409AK/883 55 to 125C 55 to 125C 5962-920401MEA 5962-920402MEA LCC-20* 5962-920401M2A LCC-20* 5962-920402M2A *Block Diagram and Pin Configuration not shown. Absolute Maximum Ratings Voltage Referenced to V 16-Pin Narrow SOIC4 2... cc eee eee eee 600 mW VE ccc ence nec n eect estes teeeeeae 44V 16-Pin CerDIP o.oo eee cece cece ccecceceee 900 mW GND occ cece cece ene e eee eaeeene 25 V Lcc-208 750 mW Digital Inputs*, Vs, Vp... .e--- (V-) -2V to (V+) +2.Vor A m 20 mA, whichever occurs first N . otes . Current (Any Terminal) 0.0.00... 0.0.0.0 cece nce eee ees 30 mA a. Signals on Sx, Dx or INx exceeding V+ or V will be clamped Peak Current, S or D by internal diodes. Limit forward diode current to maximum (Pulsed at 1 ms, 10% Duty Cycle Max) ................ 100 mA current ratings. Storage Temperature (AK Suffix) ............ 65 to 150C b. a reads eas or welded a PC board. + _ c. erate 6 mW/C above 75C, a. (o" DY Suffix) v....... $50 125C G._ Derate 7.6 mW/C above 75C. Power Dissipation (Package) e. Derate 12 mW/C above 75C. 16-Pin Plastic DIPS 2.0.2. cece eee eee 450 mW f. Derate 10 mW/C above 75C. 2 MM 6254735 O0e214ed P-32167Rev. C (11/15/94) 4o7 a 8 aaaTEMIC Siliconix DG408/409 Specifications? Test Conditions A Suffix D Suffix Unless Otherwise Specified 55 to 125C | 40to 85C V+=15V,V-=-15V Parameter Symbol Var = 0.8 V, Vay = 2.4 VE Temp | Typ* | Min | Max4 | Min | Max? | Unit Analog Switch Analog Signal Range VANALOG Full 15 15 -15 15 Drain-Source _ _ Room 40 100 100 On-Resistance "DS(on) Vp = 10V, Is = 10mA Full 125 125 TDS(on) Matching _ Been Channels Arpsjon) Vp = +10V Room 15 Is | % Source Off I Vs = 10 V, Vp = 10V Room -05 ] 05 | -05 |] 05 Leakage Current S(off) Ven =0V Full -50 | 50 -5 5 Room -1 1 -1 1 = DG408 _ - Drain Off Leakage I ~ - = i y Full 100 | 100 20 20 Current D(off} Ven = 0V pa4es Room j 1 1 1 nA Full 50 50 -10 10 Room -1 1 -1 1 DG408 Drain On Leakage Vs = Vp = +10V Full 100 | 100 | -20 | 20 e I Current D(on) | Sequence Each Switch On Room 1 7 =] 1 DG409 | Full ~50 | 50 | -10 | 10 Digital Control Logic High Input Voltage VINH Full 2.4 2.4 Vv Logic Low Input Voltage VINL Full 0.8 0.8 Logic High Input Current lan Va =2.4V,15V Full -10 10 10 10 Logic Low Input Current Tat VEN = 0V,2.4V, Va = OV Full -10 10 ~10 10 nA Logic Input Capacitance Cin f= 1MHz Room 8 pF Dynamic Characteristics Transition Time tTRANS See Figure 2 Full 160 250 250 Break-Before-Mak . Interval eore-Make topPEN See Figure 4 Room 10 10 ns Enable Turn-On Time ton(EN) See Figure 3 Room 115 be 150 Enable Turn-Off Time tOFF(EN) Room 105 150 150 Charge Injection Q CL =10nE Vs =0V Room 20 pc Off Isolation OIRR Ven = OW RL = 1kO Room | -75 dB Source Off Capacitance Csvorry Ven = 0V,Vs=0V,f=1MHz | Room 3 Drain Of Capaci C DG408 | Room 26 ti rain apacitance D(off} Ven = OV, Vp =0V DG409 | Room 14 pF J J f= 1MHz DG408 | Room | 37 Drain On Capacitance Cpion) DG409 | Room 75 Power Supplies Positive Supply Current I+ Vv Ve =0VorsV Full 10 75 75 Negative Supply Current | oa ENS UA or Full 1 ~-75 -75 nA Positive Supply Current I+ Ven = 2.4 V, Va =0-V Foon 0.2 mA Negative Supply Current I- Full 500 -500 pA P-32167Rev. C (11/15/94) 3 Mm 4254735 0021429 313 a aaa tamaTEMIC DG408/409 Siliconix Specifications? for Single Supply Test Conditions A Suffix D Suffix Unless Otherwise Specified 55 to 125C | 40 to 85C V+ =12V,V-=0V Parameter Symbol Va = 0.8 V, Van = 2.4 VE Analog Switch rae Source Tps(on) Vp =3V,10VIs=1mA Room | 90 Q Min | Max! | Min | Max! | Unit Switching Time of Multiplexer tTRANS Vs1 = 8 V, Vsg = 0 V, Vin = 2.4V Room 180 > ns Enable Turn On Time* ton(EN) Vinu =2.4V, Vint =0V Room 180 Enable Tarn Off Time tOFF(EN) Vs1=5V Room | 120 Charge Injection Q CL = 1nF Vs= 6 V, Rs = 0 Room 5 pc Notes a. Refer to PROCESS OPTION FLOWCHART (Section 5 of the 1994 Data Book or FaxBack number 7103). b. Room = 25C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. Vin = input voltage to perform proper function. g. Atps(on) = MDS(on) Max rps(on) Min. Worst case isolation occurs on Channel 4 do to proximity to the drain pin. 4 P-32167Rev. C (11/15/94) Me 8254735 0021430 035 Aaa aeTEMIC Siliconix Typical Characteristics 30 Source/Drain Capacitance ys. Analog Voltage V+=i15V V-=-15V 60 Cron) & eu) a 40 S 20 0 -15 -10 -5 0 5 10 15 VANALOG Analog Voltage (V) Drain Leakage Current vs. Source/DrainVoltage 100 T T T V+=15V V-=-15V 60 [ Vs = Vp for Ipcoff) Vp= Vsiones) for De) y _ DG409 In(om 7" < | ~~ 20 L a Lenn -60 a} | L DG409 Ipvon) 100 DG408 Ip (on) Ipcort) 140 -15 --10 -5 0 5 10 15 Vp or Vs Drain or Source Voltage (V) Input Switching Threshold vs. Supply Voltage 2.0 15 & 1.0 2 3 F 0.5 0.0 4 8 12 16 20 + Vsuppty (V) | ot DG408/409 Drain Leakage Current vs. Source/Drain Voltag: (Single 12-V Supply) 60 T T T Vs = 0V for Ipcorf) Vs = Vp for Ip(on) 40 DG408 Ipvotr) | 20 DG409 Ipvotr ; x DG409 I | on & 0 Poon | aS ce 20 Z| Lpoaes Ip ~40 7 60 0 2 4 6 8 10 12 Vp Drain Voltage (V) Source Leakage Current vs. Source Voltage 20 15 V+=15V -~ V-=-15V 5 = az VD) 0 Lf _ Vs =12V -5 vV-=0V 10 ~15 +10 5 0 5 10 15 Vs Source Voltage (V) Negative Supply Current vs. Switching Frequenc 100 mA | | Vsuppiy = +15 V ~10 mA o. Lr ima LL Ven=26v 4 -100 pA 7 10 pA LZ TAA Ven =O Vor5V _ f 1pA eS ~O.1 pA 100 1k 10k 100k 1M 10} Switching Frequency (Hz) P-32167Rev. C (11/15/94) Me 8254735 0021431 TT?)DG408/409 Typical Characteristics (Contd) Positive Supply Current vs. Switching Frequency TEMIC Siliconix Isuppy vs. Temperature 100 mA ] | 100 pA Vsuppiy = +15 V /, 10 pA I+ 10mA / 1pA = Ven =2.4V 4, 100nA ~ 1imA /) + La ~ "| 10nA aA Le 100 y nA re : YL OAT | Yanna nsy Ven =0Vor5V 100 pA a A= | | a ea Ven =0V 10 pA 10 pA | | | | 100 1k 10k 100k 1M 10M -55-35 ~15 5 25 45 65 85 105 125 Switching Frequency (Hz) Temperature (C) Positive Supply Current vs. Temperature (DG408) Charge Injection vs. Analog Voltage AN Ci = 10,000 pF 80 L SVU Pp 20 N Vin = 5 Vp-p \ 70 60 15 PS & __ e ~ V+=15V =S 40 0F v-=-15V oO Vin =0V 30 Ven = 0V 20 5 10 0 0 -10 -355 -35 -15 5 25 45 65 85 105 125 ~15 10 -5 0 5 10 15 Temperature (C) Vs Source Voltage (V) 120 ys. Vp and Supply 160 vs. Vp and Supply (Single Supply) 140 100 120 80 a a 100 2 60 = 80 wn B B Bg 40 40 20 +20V __ 415 V 20 0 0 -20 -16-12 -8 -4 0 4 8 12 16 20 0 4 8 12 16 20 22 Vp Drain Voltage (V) Yp ~ Drain Voltage (V) 6 P-32167Rev. C (11/15/94) mM 86254735 O0el4se 506 a aTEMIC Siliconix DG408/ 409 Typical Characteristics (Contd) vs. Vg and Temperature vs. Vs and Temperature (Single Supply 80 130 70 V+=15V 125C V-=-15V 110 85C 60 125C & 85C & 25C g 40 25C =e 70 a a B30 a 50 20 10 30 0 10 ~15 -10 -5 0 5 10 15 0 2 4 6 8 10 12 Vs Source Voltage (V) Vs Source Voltage (V) 150 Off Isolation and Crosstalk vs. Frequency Insertion Loss vs. Frequency V+ =15V Ry = 1ka -130 V-=-15V Ry, =1kQ PSN V+=15V -110 , V-=-15V N = Ref. 1 Vrms = RQ 3 3 -90 SS 2 Ne g ~70 Costa SN 50 oS Ry = 502 -30 NS 100 1k 10k 100k 1M 10M 100M 10 100 1k 10k 100k 1M 10M 10 f Frequency (Hz) f ~ Frequency (Hz) Switching Time vs. Bipolar Supply , Switching Time vs. Single Supply 200 27. | T tTRANS 250 175 i 225 ~ 150 ~ e Se 200 tTRANS 125 175 tor MN tOFF(EN) 150 FEN) 100 tT t eee 125 ON(EN) en 5 100 +10 +12 14 +416 +18 +20 +22 8 9 10 11 12 13 14 15 Vsupety (V) Vsuppy (V) P-32167Rev. C (11/15/94) 7 Me 4254735 0021433 644DG408/409 TEMIC Siliconix Schematic Diagram (Typical Channel) V+ 0 GND o VREF rd i joe 7] O D o i a i Ao OF i J | TTL | i | | ! V+ | i at ! Level ! Decode/ | | v- Ax Po Shift Drive | | =] & | To s i V+ | i b> | EN > ee en ~ | 4 an 5, vV- 0 Figure 1. Test Circuits +15V V+ Ag Sif- +10V ~ A S82 -Sy7 [- DG408 Sgsko F10V t, <20 ns : 3V te <20 ns EN D Vo Logic {.. \ GND v- Input 7 50% r 502 6 3000 Ls PE ov ~15V | =z o> = =- tT Vs1 --- Switch 90% Output Vo OV +15V 90% Vsg V+ oe Al Si-O +10V trRaNs * _ trRANs = DG409 > S$, ON Sg ON a7 a a a Sa f-O F10V = EN Dp Vo GND v- 502 b 300 Q 35 pF Fy mee 7 Figure 2. Transition Time Mm 8254735 0021434 760 P-32167Rev. C (11/15/94)TEMIC Siliconix DG408/409 Test Circuits +15 V V+ Sy P70 -5V EN S2 Sg pGd0s L 1 = Ad Logic Vi GND v- P Input 502 } 1kQ 35 pF -15V = = = = => 10% Switch +15V Output Vo 7 , wn V+ 0 Sip F-O -5V EN Sia Sa, Da Ao Sap Sap A DG409 = 1 Dp Vo GND v- 50 Q 6 1kQ 35 pF ~15V | Figure 3. Enable Switching Time +15 V V+ t; <20 ns +2.4 VO-4 EN Logic 3Vv te <20 ns Input 50% AllS andD, Jo +5V Ov Ag Al Ag Dp, D Vo V: GND v- s 80% 5 Switch 502 -isv 3002 35 pF Output jb a2 a Vo OV TOPEN Figure 4. Break-Before-MakeInterval P-32167Rev. C (11/15/94) 9 MH 6e54?395 00014355 61?DG408/409 TEMIC Siliconix Test Circuits ? +15 V V+ 3 eae OFF ON OFF nput Ov DI Vo CL Switch / \ v- | 10 nF Output } = AVo is the measured voltage due to charge transfer err when the channel turns off. -15V Q=C_LxAVo Figure 5. Charge Injection ? +15 V VIN V+ Vs Sx I R,=502 db Ish Ao D Vo Al = A? Ri GND EN V- 1kQ -15V __ Vv = S Offlsolation =201log |2Ut VIN Figure 6. Off Isolation +15 V V+ Ry ~ GND EN V- 1kQ -IVo7 L_ Vi = = Crosstalk = 20 log our VIN Figure 7. Crosstalk 10 P-32167Rey. C (11/15/94) MB 8254735 0021436 5535TEMIC Siliconix Test Circuits DG408/409 +15 V 's, V+ Ag D Vo Ai Ag Ri GND EN V- 1k& -i5V 7 y _ == Insertion Loss = 20 log OUT = Vin Figure 8. Insertion Loss +15 V V+ S 1 | TP Meter Oo A2 | HP4192A Channel oA: Sg b= o Impedance \ Analyzer Oj Ao \ LC or Equivalent Deo = GND EN V- f= 1 MHz Lt lg -15V Figure 9. Source Drain Capacitance Application Hints Overvoltage Protection A very convenient form of overvoltage protection consists of adding two small signal diodes (1N4148, 1N914 type) in series with the supply pins (see Figure 10). This arrangement effectively blocks the flow of reverse currents. It also floats the supply pin above or below the normal V+ or V value. In this case the overvoltage signal actually becomes the power supply of the IC. From the point of view of the chip, nothing has changed, as long as the difference Vs (V) doesnt exceed +44 V. The addition of these diodes will reduce the analog signal range to 1 V below V+ and 1 V above V, but it preserves the low channel resistance and low leakage characteristics. P-32167Rev. C (11/15/94) 11 Mm 8254735 0021437 4ITDG408/409 Application Hints (Contd) Sx : 1N4148 oO t _ DG408 i 1N4148 V- OD TEMIC Siliconix Figure 10. Overvoltage Protection Using Blocking Diodes 8-Channel Sequential Multiplexer/Demultiplexer Differential 4-Channel Sequential Multiplexer/Demultiplexer +15 V -15V +15 V -15V LE =] LU=] V+ GND V- V+ GND V- 51 Oo] Sta 0 S O] Sra ; o S83 Analog Differential o Da Differential Analo; Analo a t in puts O S14 pG408 ~DFOo Output Inputs DG409 Analog (Outputs) O Ss (input) (Outputs) oI 5 Outputs S6 1b (Inputs) S, O] So Dp-o Sa O S3p +15V Ag_Ai_Ag_EN *f A; EN +15V 1 t | Le Clock DM7493 Qp In Bin Qc Qp J ore J Q Nc 4 Ain Qa, ENC Clock Y2 MM74C73 2 MM74C73 To1 102 GND In o CLK CLK J LK OL NC K OFR-Nc +15V CLEAR GND CLEAR A rc 6 Enable InO Reset Enable . = MUX On-Off Control) Figure 11. 12 P-32167Rev. C (11/15/94) MM 62547395 0021438 Jeb