GMM 3x120-0075X2 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings VDSS TVJ = 25C to 150C TC = 25C TC = 90C IF25 IF90 TC = 25C (diode) TC = 90C (diode) Symbol Conditions 75 V 20 V 110 85 A A -o VGS ID25 ID90 110 80 A A e Characteristic Values (TVJ = 25C, unless otherwise specified) s TVJ = 25C TVJ = 125C VGS(th) VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 36 V; ID = 25 A RthJC RthJH 1) t h 4.9 8.4 mW mW 4.0 V 1 A A 0.2 A 50 115 30 30 nC nC nC 130 100 500 100 ns ns ns ns 0.20 0.50 0.01 mJ mJ mJ n p e Eon Eoff Erecoff 4.0 7.2 2.0 TVJ = 25C TVJ = 125C inductive load VGS = 10 V; VDS = 30 V ID = 80 A; RG = 39 ; TJ = 125C with heat transfer paste (IXYS test setup) t td(on) tr td(off) tf max. a a on chip level at VGS = 10 V typ. t min. RDSon 1) AC drives * in automobiles - electric power steering - starter generator * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment i vu t e Symbol 1.3 1.0 1.6 Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer * Space and weight savings K/W K/W VDS = ID*(RDS(on) + 2RPin to Chip) Recommended replacement: MTI90WX75GD IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307 1-4 GMM 3x120-0075X2 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VSD (diode) IF = 80 A; VGS = 0 V 0.9 trr QRM IRM IF = 80 A; -diF/dt = 800 A/s; VR = 30 V 55 0.9 30 1.2 V ns C A Component Conditions Maximum Ratings IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections 2 pins for output L1, L2, L3 TJ Tstg VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute FC mounting force with clip Symbol Conditions min. -55...+175 -55...+125 C C 1000 V~ 50 - 250 N typ. max. tbd mW 160 pF 25 g -o coupling capacity between shorted pins and back side metallization Weight VDS = ID*(RDS(on) + 2RPin to Chip) a t t e n p h a s t e 1) A Characteristic Values Rpin to chip 1) CP 75 i vu t e Symbol IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307 2-4 t a t e n p h a s t e -o i vu t e GMM 3x120-0075X2 Leads SMD Ordering Standard Part Name & Packing Unit Marking Part Marking GMM 3x120-0075X2 - SMD GMM 3x120-0075X2 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved Delivering Mode Base Qty. Ordering Code Blister 28 507 508 20110307 3-4 a t t e n p h a s t e -o i vu t e GMM 3x120-0075X2 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307 4-4