IPAN70R600P7S MOSFET 700VCoolMOSP7PowerTransistor PG-TO220FP CoolMOSTMisarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOSTMP7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. Drain Pin 2, Tab Features *ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss *Excellentthermalbehavior *IntegratedESDprotectiondiode *Lowswitchinglosses(Eoss) *Productvalidationacc.JEDECStandard Gate Pin 1 Source Pin 3 Benefits *Costcompetitivetechnology *Lowertemperature *HighESDruggedness *Enablesefficiencygainsathigherswitchingfrequencies *Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25C 700 V RDS(on),max 0.6 Qg,typ 10.5 nC ID,pulse 20.5 A Eoss @ 400V 1.2 J V(GS)th,typ 3 V ESD class (HBM) 2 Type/OrderingCode Package IPAN70R600P7S PG-TO 220 FullPAK Narrow Lead Final Data Sheet Marking 70S600P7 1 RelatedLinks see Appendix A Rev.2.1,2018-02-13 700VCoolMOSP7PowerTransistor IPAN70R600P7S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2018-02-13 700VCoolMOSP7PowerTransistor IPAN70R600P7S 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 8.5 5.0 A TC = 20C TC = 100C - 20.5 A TC=25C - - 3.2 A measured with standard leakage inductance of transformer of 7H dv/dt - - 100 V/ns VDS=0...400V Gate source voltage VGS -16 -30 - 16 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 24.9 W TC=25C Operating and storage temperature Tj,Tstg -40 - 150 C - Continuous diode forward current IS - - 4.5 A TC=25C IS,pulse - - 20.5 A TC = 25C dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25C Maximum diode commutation speed dif/dt - - 50 A/s VDS=0...400V,ISD<=IS,Tj=25C Insulation withstand voltage VISO - - 2500 V Vrms, TC=25C, t=1min Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Application (Flyback) relevant avalanche current, single pulse3) IAS MOSFET dv/dt ruggedness 2) Diode pulse current 4) Reverse diode dv/dt 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction Values Min. Typ. Max. RthJC - - 5.0 C/W - Thermal resistance, junction - ambient RthJA - - 80 C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 C Tsold 1.6 mm (0.063 in.) from case for 10s 1) DPAK / IPAK equivalent. Limited by Tj max. Tj = 20C. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7. 4) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.1,2018-02-13 700VCoolMOSP7PowerTransistor IPAN70R600P7S 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.50 V VDS=VGS,ID=0.09mA - 10 1 - A VDS=700V,VGS=0V,Tj=25C VDS=700V,VGS=0V,Tj=150C - - 1 A VGS=20V,VDS=0V Min. Typ. Max. V(BR)DSS 700 - Gate threshold voltage V(GS)th 2.50 Zero gate voltage drain current IDSS Gate-source leakage current incl. Zener IGSS diode Drain-source on-state resistance RDS(on) - 0.49 1.03 0.60 - VGS=10V,ID=1.8A,Tj=25C VGS=10V,ID=1.8A,Tj=150C Gate resistance RG - 10 - f=1MHz,opendrain Unit Note/TestCondition Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 364 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 7 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 17 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 200 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 14 - ns VDD=400V,VGS=13V,ID=1.4A, RG=5.3 Rise time tr - 5.5 - ns VDD=400V,VGS=13V,ID=1.4A, RG=5.3 Turn-off delay time td(off) - 63 - ns VDD=400V,VGS=13V,ID=1.4A, RG=5.3 Fall time tf - 23 - ns VDD=400V,VGS=13V,ID=1.4A, RG=5.3 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 1.6 - nC VDD=400V,ID=1.4A,VGS=0to10V Gate to drain charge Qgd - 3.7 - nC VDD=400V,ID=1.4A,VGS=0to10V Gate charge total Qg - 10.5 - nC VDD=400V,ID=1.4A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=1.4A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 4 Rev.2.1,2018-02-13 700VCoolMOSP7PowerTransistor IPAN70R600P7S Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=2.5A,Tj=25C 190 - ns VR=400V,IF=1.4A,diF/dt=50A/s - 0.8 - C VR=400V,IF=1.4A,diF/dt=50A/s - 9 - A VR=400V,IF=1.4A,diF/dt=50A/s Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.1,2018-02-13 700VCoolMOSP7PowerTransistor IPAN70R600P7S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 30 1 s 25 10 s 101 100 s 20 1 ms ID[A] Ptot[W] 100 15 10 ms 10 -1 10 DC 10-2 5 0 0 25 50 75 100 125 10-3 150 100 101 102 TC[C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 101 10 s 1 s 0.5 100 s ID[A] ZthJC[K/W] 1 ms 100 10 ms 10-1 0.2 10 0 0.1 0.05 0.02 DC -2 10 0.01 single pulse 10-3 100 101 102 103 10-1 10-5 10-4 10-3 VDS[V] ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 10-2 10-1 100 tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,2018-02-13 700VCoolMOSP7PowerTransistor IPAN70R600P7S Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 25 18 20 V 10 V 8V 20 V 10 V 16 20 8V 7V 14 7V 12 15 6V ID[A] ID[A] 6V 10 5.5 V 10 8 5.5 V 5V 6 5V 5 4 2 4.5 V 0 0 5 10 15 4.5 V 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 3.0 2.00 6.5 V 1.80 7V 2.5 1.60 6V 1.40 5.5 V 2.0 1.20 RDS(on)[] RDS(on)[] 5V 10 V 1.5 1.0 1.00 98% 0.80 0.60 typ 0.40 0.5 0.20 0.0 0 5 10 15 20 0.00 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[C] RDS(on)=f(Tj);ID=1.8A;VGS=10V 7 Rev.2.1,2018-02-13 700VCoolMOSP7PowerTransistor IPAN70R600P7S Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 25 10 9 20 8 25 C 120 V 7 400 V VGS[V] 6 ID[A] 15 150 C 10 5 4 3 5 2 1 0 0 2 4 6 8 10 0 12 0 5 VGS[V] 10 15 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=1.4Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram13:Drain-sourcebreakdownvoltage 2 10 840 25 C 125 C 820 800 780 101 IF[A] VBR(DSS)[V] 760 100 740 720 700 680 660 640 620 10-1 0 1 2 3 600 -75 -50 -25 VSD[V] 25 50 75 100 125 150 175 Tj[C] IF=f(VSD);parameter:Tj Final Data Sheet 0 VBR(DSS)=f(Tj);ID=1mA 8 Rev.2.1,2018-02-13 700VCoolMOSP7PowerTransistor IPAN70R600P7S Diagram14:Typ.capacitances Diagram15:Typ.Cossstoredenergy 4 10 3.0 2.5 103 Ciss 2.0 2 C[pF] Eoss[J] 10 101 1.5 Coss 1.0 Crss 100 10-1 0.5 0 100 200 300 400 500 0.0 0 VDS[V] 200 300 400 500 600 700 VDS[V] C=f(VDS);VGS=0V;f=250kHz Final Data Sheet 100 Eoss=f(VDS) 9 Rev.2.1,2018-02-13 700VCoolMOSP7PowerTransistor IPAN70R600P7S 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.1,2018-02-13 700VCoolMOSP7PowerTransistor IPAN70R600P7S 6PackageOutlines DIMENSIONS A A1 A2 b b1 c D D1 E e N L L1 Q MILLIMETERS MAX. 4.80 2.80 2.67 0.69 1.15 0.59 16.10 9.78 10.60 2.54 3 13.45 13.75 1.70 1.90 3.00 3.20 3.25 3.45 DOCUMENT NO. Z8B00180155 MIN. 4.60 2.60 2.47 0.56 1.01 0.46 15.90 9.58 10.40 REVISION 04 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 07.11.2016 Figure1OutlinePG-TO220FullPAK-NarrowLead,dimensionsinmm-IndustrialGrade Final Data Sheet 11 Rev.2.1,2018-02-13 700VCoolMOSP7PowerTransistor IPAN70R600P7S 7AppendixA Table11RelatedLinks * IFXCoolMOSP7Webpage:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.1,2018-02-13 700VCoolMOSP7PowerTransistor IPAN70R600P7S RevisionHistory IPAN70R600P7S Revision:2018-02-13,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-02-16 Release of final version 2.1 2018-02-13 Corrected front page text TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2018-02-13