FQU5P20 - Fairchild - Product.Network

FQD5P20 / FQU5P20

200V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters.

Features

• -3.7A, -200V, RDS(on) = 1.4Ω @VGS = -10 V

• Low gate charge ( typical 10 nC)

• Low Crss ( typical 12 pF)

• Fast switching

• 100% avalanche tested

Absolute Maximu m Ratings TC = 25°C unless otherwise noted

Thermal Characteristi cs

Symbol Parameter FQD5P20 / FQU5P20 Units

VDSS Drain-Source Voltage -200 V

IDDrain Current - Continuous (TC = 25°C) -3.7 A

- Continuous (TC = 100°C) -2.34 A

IDM Drain Current - Pulsed (Note 1) -14.8 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 330 mJ

IAR Avalanche Current (Note 1) -3.7 A

EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns

PDPower Dissipation (TA = 25°C) * 2.5 W

Power Dissipation (TC = 25°C) 45 W

- Derate above 25°C 0.36 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 2.78 °C/W

RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

I-PAK

FQU Series

D-P AK

FQD Series GS

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October 2008

QFET

• RoHS Compliant

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FQD5P20 / FQU5P20

(Note 4)

(Note 4, 5)

(Note 4)

Elerical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 36.2mH, IAS = -3.7A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -4.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit ions Min Typ Max Unit s

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-200 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = -250 µA, Referenced to 25°C -- -0.17 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = -200 V, VGS = 0 V -- -- -1 µA

VDS = -160 V, TC = 125°C -- -- -10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA

On Characteri st ics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-3.0 -- -5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = -10 V, ID = -1.85 A -- 1.1 1.4 Ω

gFS Forward Transconductance VDS = -40 V, ID = -1.85 A -- 2.2 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

-- 330 430 pF

Coss Output Capacitance -- 75 98 pF

Crss Reverse Transfer Capacitance -- 12 15 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = -100 V, ID = -4.8 A,

RG = 25 Ω

-- 9 28 ns

trTurn-On Rise Time -- 70 150 ns

td(off) Turn-Off D e l a y Time -- 12 35 ns

tfTurn -Off Fall Time -- 2 5 60 ns

QgTotal Gate Cha rge VDS = -160 V, ID = -4.8 A,

VGS = -10 V

-- 10 13 nC

Qgs Gate-Source Charge -- 2.8 -- nC

Qgd Gate-Drain Charge -- 5.2 -- nC

Drain-Source Diode Character istics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- -3.7 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -14.8 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = -3.7 A -- -- -5.0 V

trr Reverse Recovery Time VGS = 0 V, I S = -4.8 A,

dIF / dt = 100 A/µs

-- 175 -- ns

Qrr Reverse Recovery Charge -- 1.07 -- µC

•

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FQD5P20 / FQU5P20

0.0 0.5 1.0 1.5 2.0 2.5 3.0

10-1

100

101

150℃※ Notes :

1. VGS = 0V

2. 250μ

s Pulse Test

25℃

-IDR , R ev e rs e D ra in Curren t [A ]

-VSD , Source-Drain Voltage [V]

246810

10-1

100

101

150℃

25℃

-55℃

※ Notes :

1. VDS = -40V

2. 250μ

s Pulse Test

-ID , Drain Current [A]

-VGS , Gate-Source Voltage [V]

10-1 100101

10-2

10-1

100

101 VGS

Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-6.0 V

Bo ttom : -5.5 V

※ Notes :

1. 250μ

s Pulse Test

2. TC = 25℃

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

036912

0.0

0.6

1.2

1.8

2.4

3.0

※ N o te : TJ = 25℃

VGS = - 20V

VGS = - 10V

RDS(on) [Ω],

Drain-Source On-Resistance

-ID , Dra in Cu rren t [A]

024681012

VDS = -100V

VDS = -40V

VDS = -160V

※ Note : ID = -4.8 A

-VGS , G ate-Source Voltage [V]

QG, To tal Ga te Charge [nC]

10-1 100101

150

300

450

600

750 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

※ Notes :

1. VGS = 0 V

2. f = 1 MH z

Crss

Coss

Ciss

Capacitance [pF]

-VDS, Drain-Source Voltage [V]

Figure 5. C apacitance C haracterist ics Figure 6. Gate Charge Characteristics

Figu re 3. On-Res i stance Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character ist ic s

Typical Characteristics

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FQD5P20 / FQU5P20

10-5 10-4 10-3 10-2 10-1 100101

10-1

100

※ No te s :

1 . ZθJC(t) = 2.78 ℃/W M a x .

2 . D u ty F a c t o r, D = t1/t2

3 . TJM - T C = PDM * Z θJC(t)

single puls e

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Thermal Response

t1, Sq u a re W a ve P u lse Du ra tio n [s ec ]

25 50 75 100 125 150

-ID, Drain Current [A]

TC, Case Temperature [℃

]

100101102

10-1

100

101

DC 10 m s

1 m s

100 µs

Operation in This Area

is Limited by R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

※ Notes :

1. VGS = -10 V

2. ID = -2.4 A

RDS(ON) , (Norm alized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1 . VGS = 0 V

2 . ID = -250 μ

-BV DSS , (No rma liz e d )

Drain-Sou rce Breakdow n V oltage

TJ, Junction Tempe rature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Br ea kdown Voltage Variatio n

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Respons e Cur ve

PDM

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FQD5P20 / FQU5P20

Charge

VGS

-10V Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

-10V Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS RL

DUT

VGS

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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FQD5P20 / FQU5P20

Peak Diode Recovery dv/dt Tes t Ci rcuit & Wavefo r m s

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

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FQD5P20 / FQU5P20

Dimensions in Millimeters

Mechanical Dimensions

D - PAK

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FQD5P20 / FQU5P20

6.60 ±0.20

0.76 ±0.10

MAX0.96

2.30TYP

[2.30±0.20] 2.30TYP

[2.30±0.20]

0.60 ±0.20

0.80 ±0.10

1.80 ±0.20

9.30 ±0.30

16.10 ±0.30

6.10 ±0.20

0.70 ±0.20

5.34 ±0.20

0.50 ±0.10

2.30 ±0.20

(0.50) (0.50)(4.34)

IPAK

Mechanical Dimensions

Dimensions in Millimeters

I - PAK

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FQD5P20 / FQU5P20

FQD5P20 / FQU5P20 Rev. A1www.fairchildsemi.com

Rev. I37

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