SFH 421
SFH 426
GaAlAs-IR-Lum inesz enzdi ode in SMT-Gehäuse
GaAlAs Infrared Emitter in SMT Package
Lead (Pb) Free Product - RoHS Compliant
SFH 421 SFH 426
2005-02-21 1
Wesentliche Merkmale
GaAIAs-LED mit sehr hohem Wirkungsgrad
Gute Linearität (Ie = f [IF]) bei hohen Strömen
Gleichstrom- (mit Modulation) oder
Impulsbetrieb möglich
Hohe Zuverlässigkeit
Hohe Impulsbelastbarkeit
Oberflächenmontage geeignet
Gegurtet lieferbar
•SFH 421 Gehäusegleich mit SFH 320
SFH 426 Gehäusegleich mit SFH 325
Anwendungen
Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb, Lochstreifenleser
Industrieelektronik
„Messen/Steuern/Regeln“
Automobiltechnik
Sensorik
Alarm- und Sicherungssysteme
IR-Freiraumübertragung
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 421 Q65110A1218
Kathodenkennzeichnung: abgesetzte Ecke
cathode marking: bevelled edge
TOPLED®
SFH 426 Q65110A2512 SIDELED®
Features
Very highly efficient GaAIAs-LED
Good Linearity (Ie = f [IF]) at high currents
DC (with modulation) or pulsed operations are
possible
High reliability
High pulse handling capability
Suitable for surface mounting (SMT)
Available on tape and reel
•SFH 421 same package as SFH 320
SFH 426 same package as SFH 325
Applications
Miniature photointerrupters
Industrial electronics
For drive and control circuits
Automotive technology
Sensor technology
Alarm and safety equipment
IR free air transmission
2005-02-21 2
SFH 421, SFH 426
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 + 100 °C
Sperrspannung
Reverse voltage VR5 V
Durchlassstrom
Forward current IF100 mA
Stoßstrom, τ = 10 µs, D = 0
Surge current IFSM 2.5 A
Verlustleistung
Power dissipation Ptot 180 mW
Wärmewiderstand Sperrschic ht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block
RthJA
RthJS
450
200
K/W
K/W
SFH 421, SFH 426
2005-02-21 3
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 880 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 m A
∆λ 80 nm
Abstrahlwinkel
Half angle ϕ± 60 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area L × B
L × W0.3 × 0.3 mm
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, RL = 50
Switchi ng times, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50
tr, tf0.5 µs
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
Co15 pF
Durchlassspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.5 ( 1.8)
3.0 ( 3.8)
V
V
Sperrstrom
Reverse current
VR = 5 V
IR0.01 ( 1) µA
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe23 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe, IF = 100 mA
TCI– 0.5 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 2 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.25 nm/K
2005-02-21 4
SFH 421, SFH 426
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of = 0.01 sr
Bezeichnung
Parameter Symbol Werte
Values Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie typ
4
7mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ 48 mW/sr
SFH 421, SFH 426
2005-02-21 5
Relati ve Sp ectral Emissi o n
Irel = f (λ)
Forwa rd Current
IF = f (VF) single pulse, tp = 20 µs
Radiation Characteristics Sel = f (ϕ)
0
750
Ιrel
OHR00877
800 850 900 950 nm 1000
20
40
60
80
%
100
λ
10
OHR00881
F
V
-3
-2
10
-1
10
0
10
1
10
0123456V8
A
Ι
F
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
10˚20˚40˚ 30˚
OHL01660
50˚
60˚
70˚
80˚
90˚
100˚
20˚ 40˚ 60˚ 80˚ 100˚ 120˚
Radiant Intensity
Single pulse , tp = 20 µs
Permiss ible Pulse Handling
Capability IF = f (tp), TA = 25 °C
duty cycle D = parameter
Ιe
Ιe 100 mA = f (IF)
10
OHR00878
Ιe
F
Ι
-3
-2
10
-1
10
0
10
1
10
2
10
0
10 101102104
mA
e
Ι
(100mA)
3
10
10
Ι
F
OHR00886
1
2
10
3
10
4
10
mA
-5
10 s
=D
F
Ι
T
DC
0.005=
D
p
t
T
t
p
p
t
0.5
0.2
0.1
0.01
0.02
0.05
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Max. Permissible Forward Current
IF = f (TA)
OHR00883
0
F
Ι
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
TA
RthjA = 450 K/W
2005-02-21 6
SFH 421, SFH 426
Maßzeichnung
Package Outlines
Maße we rden wie folgt ange geben: mm (inc h) / Dim ensions are spe cified as follows: mm (inch).
SFH 421
GPLY6724
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043)
3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Cathode marking
3.0 (0.118)
3.4 (0.134)
(2.4) (0.095)
0.1 (0.004) (typ.)
4˚±1
A
C
SFH 426
GPLY6880
(R1)
Cathode marking
Cathode Anode
(2.4 (0.094))
2.8 (0.110)
2.4 (0.094)
4.2 (0.165)
3.8 (0.150)
0.9 (0.035)
1.1 (0.043)
spacing
2.54 (0.100)
0.7 (0.028)
(2.85 (0.112))
(1.4 (0.055))
(0.3 (0.012))
3.4 (0.134)
3.8 (0.150)
3.8 (0.150)
4.2 (0.165)
(2.9 (0.114))
AC
SFH 421, SFH 426
2005-02-21 7
Empfohlenes Lötpaddesign IR-Reflow Löten
Recommended Solder Pad IR Reflow Soldering
OHLPY970
4.5 (0.177)
2.6 (0.102)
1.5 (0.059)
Cu-area > 16 mm
Cu-Fläche > 16 mm
22
Solder resist
Lötstopplack
4.5 (0.177)
1.5 (0.059)
2.6 (0.102)
Padgeometrie für
improved heat dissipation
verbesserte Wärmeableitung
Paddesign for
SFH 421
3.7 (0.146)
1.2 (0.047)
3.0 (0.118)
Cu-area > 16 mm
Cu-Fläche > 16 mm
Paddesign
for improved
heat dissipation
Wärmeableitung
für verbesserte
Padgeometrie
Lötstopplack
Solder resist OHLPY965
2
2
SFH 426
2005-02-21 8
SFH 421, SFH 426
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B)
IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C +0 ˚C
-5 ˚C
245 ˚C ±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C -0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
SFH 421, SFH 426
2005-02-21 9
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The inform at ion describe s the type of compon ent and shall not be cons idered as assur ed c haracteristics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substa nc es . For in fo rm at ion on the types in ques t ion please contac t our Sales Organizat ion.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touc h with your nearest sale s office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Compo nents use d in life-support de vices or syste ms must be express ly authorize d for such purp ose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endangered.