S1U50-A SERIES
MAXIMUM RATINGS
(Tj= 25
unless otherwise noticed)
FEATURES
Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
Blocking Voltage to 600 Volts
On– State Current Rating of 0.8 Amperes RMS at 80
High Surge Current Capability — 10 Amperes
Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
Immunity to dV/dt — 20 V/msec Minimum at 110
Glass-Passivated Surface for Reliability and Uniformity
Pb-Free Package
Sensitive Gate
Sillicon Controlled Rectifiers
Reverse Blocking Thyristors
SCRs
1 AMPERES RMS
100 thru 600 VOLTS
SEMICONDUCTOR
LITE-ON
Rating Symbol Value Unit
Peak Repetitive Off– State Voltage (
T
J
= -40 to 110
, Sine Wave, 50 to 60 Hz; Gate Open)
V
DRM
,
V
RRM
100
200
400
600
700
Volts
On-State RMS Current (
T
C
=
80
) 180° Conduction Angles I
T(RMS)
1.0 Amp
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz,
T
J =
25
)I
TSM
10 Amps
Circuit Fusing Consideration (t = 8.3 ms) I t 0.415 A s
Forward Peak Gate Power
(T
A
= 25
, Pulse Width 1.0 us)
P
GM
0.1 Watt
Forward Average Gate Power (
T
A
= 25
, t = 8.3 ms) P
G(AV)
0.1 Watt
Forward Peak Gate Current (
T
A
= 25
, Pulse Width
1.0 us
) I
GM
1.0 Amp
Reverse Peak Gate Voltage (
T
A
= 25
, Pulse Width 1.0 ms)
V
GRM
5 Volts
Operating Junction Temperature Range @ Rate V
RRM
and V
DRM
T
J
-40 to +110
Storage Temperature Range Tstg -40 to +150
22
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for
zero or negative gate voltage; positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant
current source such that the voltage ratings of the devices are exceeded
Rev.4, Oct-2010, KTXD05
S1U50100A
S1U50200A
S1U50400A
S1U50600A
S1U50700A
TO-92 (TO-226AA)
1 Cathode
2 Gate
3 Anode
PIN ASSIGNMENT
All Dimensions in millimeter
TO-92
DIM. MIN. MAX.
A
C
D
E
F
G
B
4.45 4.70
5.33
4.32
3.18 4.19
1.39
1.15
2.42 2.66
12.7 ------
2.04 2.66
3.43
I-----
RATING AND CHARACTERISTIC CURVES
S1U50-A SERIES
Characteristic Symbol Value Unit
Thermal Resistance - Junction to Case
- Junction to Ambient
R
thJC
R
thJA
75
150
/W
Maximum Lead Temperature for Soldering Purposes 1/16" from Case for 10 Seconds
T
L
260
Characteristics Symbol Min Typ Max Unit
Peak Reptitive Forward or Reverse Blocking Current (1) T
c
=25
(VD=Rated VDRM and VRRM; RGK =1K Ohms) T
c
=125
I
DRM
I
RRM
----
----
----
----
10
100 uA
Peak Forward On-State Voltage @T
A
=25
(I
TM=
± 1.0A Peak, Pulse Width 1.0 ms, Duty Cycle 1%)
V
TM
---- ---- 1.7 Volts
Gate Trigger Current (V
AK
= 7.0 Vdc; RL = 100 Ohms) T
C
=25
I
GT
---- 20 50 uA
Holding Current (V
AK
= 7.0 V, Initiating Current = 20 mA) T
C
=25
T
C
=-40
I
H
----
----
0.5
----
5.0
10 mA
Latch Current (V
AK
=7.0 V, Ig= 200 uA) T
C
= 25
T
C
=-40
I
L
---- 0.6
----
10
15 mA
Gate Trigger Voltage (V
D
= 7.0 Vdc; R
L
=100 Ohms) T
C
= 25
T
C
=-40
V
GT
----
----
0.62
-----
0.8
1.2 Volts
Critical Rate of Rise of Off-State Voltage
(V
D
=Rated V
DRM
,Exponential Waveform, PGK=1K Ohms, T
J
=110
dv/dt 20 35 ---- V/us
Repetitive Critical Rate of Rise of On-State Current
IPK=20A,Pw=10 usec,diG/dt=1A/usex,Igt=20mA di/dt ---- ---- 50 A/us
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
c
=25 unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
(1) R
GK
= 1000 Ohms included in measurement
(2) Does not include R
GK
in measure
RATING AND CHARACTERISTIC CURVES
S1U50-A SERIES
RATING AND CHARACTERISTIC CURVES
S1U50-A SERIES
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S1U50-A SERIES
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