PRODUCT BENEFITS
Low Losses
Low Noise Switching
Cooler Operation
Higher Reliability Systems
Increased System Power
Density
PRODUCT FEATURES
Ultrafast Recovery Times
Soft Recovery Characteristics
Popular SOT-227 Package
Low Forward Voltage
High Blocking Voltage
Low Leakage Current
PRODUCT APPLICATIONS
Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Recti ers
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
053-0007 Rev H 3-2011
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise speci ed.
DUAL DIE ISOTOP® PACKAGE
APT2X100D100J APT2X101D100J APT2X101D100J 1000V 95A
APT2X100D100J 1000V 95A
Symbol
VF
IRM
CT
UNIT
Volts
μA
pF
MIN TYP MAX
1.9 2.5
2.2
1.7
250
500
110
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
IF = 100A
IF = 200A
IF = 100A, TJ = 125°C
VR = VR Rated
VR = VR Rated, TJ = 125°C
Microsemi Website - http://www.microsemi.com
Symbol Characteristic / Test Conditions APT2X101_100D100J UNIT
VRMaximum D.C. Reverse Voltage
1000 Volts
VRRM Maximum Peak Repetitive Reverse Voltage
VRWM Maximum Working Peak Reverse Voltage
IF(AV) Maximum Average Forward Current (TC = 77°C, Duty Cycle = 0.5) 95
Amps
IF(RMS) RMS Forward Current (Square wave, 50% duty) 131
IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 1000
TJ,TSTG Operating and StorageTemperature Range -55 to 175
°C
TLLead Temperature for 10 Sec. 300
Anti-Paralle l P aralle l
2
1
323
414
S
O
T
-
22
7
IS OT OP
®
1
23
4
file # E145592
"UL Recognized"
APT2X101_100D100J
053-0007 Rev H 3-2011
DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi Reserves the right to change, without notice, the speci cations and information contained herein.
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
Maximum Terminal & Mounting Torque
Symbol
RθJC
RθJA
WT
Torque
MIN TYP MAX
.41
20
1.03
29.2
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
MIN TYP MAX
- 43
- 300
- 800
- 7 -
- 360
- 4050
- 19 -
- 170
- 7400
- 70
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
trr
trr
Qrr
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
IF = 100A, diF/dt = -200A/μs
VR = 667V, TC = 25°C
IF = 100A, diF/dt = -200A/μs
VR = 667V, TC = 125°C
IF = 100A, diF/dt = -1000A/μs
VR = 667V, TC = 125°C
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
10
-5
10
-4
10
-3
10
-2
0.1 1
ZθJC, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
Peak T
J
= P
DM
x Z
θJC
+
TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
053-0007 Rev H 3-2011
APT2X101_100D100J
TYPICAL PERFORMANCE CURVES
TJ=125°C
VR=667V
50A
100A
200A
trr
Qrr
Qrr
trr
IRRM
Q
rr, REVERSE RECOVERY CHARGE IF, FORWARD CURRENT
(nC) (A)
I
RRM, REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME
(A) (ns)
TJ = -55°C
TJ = 25°C
TJ = 125°C
TJ = 150°C
V
F, ANODE-TO-CATHODE VOLTAGE (V) -diF/dt, CURRENT RATE OF CHANGE(A/μs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
-diF/dt, CURRENT RATE OF CHANGE (A/μs) -diF/dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
Duty cycle = 0.5
TJ=150°C
TJ=125°C
VR=667V
TJ=125°C
VR=667V
140
120
100
80
60
40
20
0
C
J, JUNCTION CAPACITANCE Kf, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/μs)
I
F(AV) (A)
T
J, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
100A
200A
50A
300
250
200
150
100
50
0
10000
8000
6000
4000
2000
0
0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
100A
50A
200A
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1200
1000
800
600
400
200
0
0 25 50 75 100 125 150 25 50 75 100 125 150
.6 1 10 100 200
APT2X101_100D100J
053-0007 Rev H 3-2011
4
3
1
2
5
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse
R
ecovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Figure 9. Diode Test Circuit
Figure 10, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30μH
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
APT75GP120B2LL
Anode 1
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places )
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
Anode 2
Anti-paralle l P aralle l
Cathode 1
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Cathode 2
Anode 1
Cathode 2 Anode 2
Cathode 1
SOT-227 (ISOTOP®) Package Outline
APT2x100DQ60J APT2x101DQ60J