LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 220
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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
v03.0209
General Description
Features
Functional Diagram
Gain: 13 dB
P1dB: +20 dBm
Supply Voltage: +4V
50 Ohm Matched Input/Output
Die Size: 2.47 x 1.60 x 0.05 mm
Electrical Speci cations, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240 mA [2]
Typical Applications
This HMC-APH633 is ideal for:
• Short Haul / High Capacity Links
• Wireless LAN Bridges
• Military & Space
• E-Band Communication Systems
The HMC-APH633 is a two stage GaAs HEMT MMIC
Medium Power Ampli er which operates between
71 and 76 GHz. The HMC-APH633 provides 13 dB
of gain, and an output power of +20 dBm at 1 dB
compression from a +4V supply voltage. All bond
pads and the die backside are Ti/Au metallized
and the ampli er device is fully passivated for reliable
operation. The HMC-APH633 GaAs HEMT MMIC
Medium Power Ampli er is compatible with conven-
tional die attach methods, as well as thermocomp-
ression and thermosonic wire bonding, making it
ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in
a 50 Ohm environment and contacted with RF
probes.
HMC-APH633
Parameter Min. Typ. Max. Units
Frequency Range 71-76 GHz
Gain 9 13 dB
Input Return Loss 8dB
Output Return Loss 10 dB
Output power for 1dB Compression (P1dB) 20 dBm
Supply Current (Idd1+Idd2) 240 mA
[1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.1V) to achieve Iddtotal = 240 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 221
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH633
v03.0209 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Fixtured Pout vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
68 70 72 74 76 78 80
RETURN LOSS (dB)
FREQUENCY (GHz)
15
16
17
18
19
20
21
22
70 71 72 73 74 75
P1dB (dBm)
FREQUENCY (GHz)
5
6
7
8
9
10
11
12
13
14
15
68 70 72 74 76 78 80
GAIN (dB)
FREQUENCY (GHz)
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
68 70 72 74 76 78 80
RETURN LOSS (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 222
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH633
v03.0209 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. BACKSIDE METALLIZATION: GOLD.
3. BACKSIDE METAL IS GROUND.
4. BOND PAD METALLIZATION: GOLD.
5. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
6. OVERALL DIE SIZE ±.002”
Drain Bias Voltage +4.5V
Gate Bias Voltage -0.8 to +0.3V
RF Input 14 dBm
Thermal Resistance
(Channel to die bottom) 61.6 °C/W
Channel Temperature 180 °C
Storage Temperature -65 °C to +150 °C
Operating Temperature -55 °C to +85 °C
Drain Bias Current (Idd1) 100 mA
Drain Bias Current (Idd2) 200 mA
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number Function Description Interface Schematic
1RFIN This pad is AC coupled
and matched to 50 Ohms.
2, 4 Vgg1, Vgg2
Gate control voltage for the ampli er adjust to achieve
Idd total = 240 mA ± 10mA. See assembly for required external
components.
3, 5 Vdd1, Vdd2 Power Supply Voltage for the ampli er. See assembly for
required external components.
6RFOUT This pad is AC coupled
and matched to 50 Ohms.
Die Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
HMC-APH633
v03.0209 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 224
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the ampli er
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
Assembly Diagram
HMC-APH633
v03.0209 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 225
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning sys-
tems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias
cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.05mm (0.002”) Thick GaAs MMIC
Ribbon Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
HMC-APH633
v03.0209 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
