V
RRM
= 50 V - 400 V
I
F
= 6 A
Features
• High Surge Capability DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol FR6A(R)05 FR6B(R)05 FR6D(R)05 Unit
Re
etitive
eak reverse
• Types from 50 V to 400 V V
RRM
2. Reverse polarity (R): Stud is anode.
FR6A05 thru FR6GR05
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Fast
Recover
Diode
FR6G(R)05
voltage
RRM
RMS reverse voltage V
RMS
35 70 140 V
DC blocking voltage V
DC
50 100 200 V
Continuous forward current I
F
16 16 16 A
Operating temperature T
j
-55 to 150 -55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 -55 to 150 °C
Parameter Symbol FR6A(R)05 FR6B(R)05 FR6D(R)05 Unit
Diode forward voltage 1.4 1.4 1.4
25 25 25 μA
666 mA
Recovery Time
Maximum reverse recovery
time T
RR
500 500 500 nS
Thermal characteristics
Thermal resistance, junction
- case R
thJC
2.5 2.5 2.5 °C/W
Reverse current I
R
V
F
V
R
= 50 V, T
j
= 25 °C
I
F
= 6 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
135 135
T
C
= 25 °C, t
p
= 8.3 ms
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
500
2.5
A135
-55 to 150
-55 to 150
FR6G(R)05
1.4
280
400
16
135
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 150 °C
V
25
6
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1