2SK3647-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Foot Print Pattern Symbol Ratings V DS VDSX *5 ID Tc=25C Ta=25C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25C Ta=25C 100 70 41 5.2 ** 164 30 41 204.7 20 5 150 2.4 ** +150 -55 to +150 Unit V V A A A V A mJ kV/s kV/s W Equivalent circuit schematic D : Drain G : Gate Operating and storage Tch C temperature range Tstg C S1 : Source ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=146H, Vcc=48V,Tch=25C, See to Avalanche Energy Graph *2 Tch < =150C < < < *3 IF< -I D , -di/dt=50A/s, Vcc BV DSS , Tch 150C *4 VDS = 100V *5 VGS=-30V *6 t=60sec f=60Hz = = = S2 : Source Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=30V VDS=0V ID=15A VGS=10V IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Typ. 100 3.0 Tch=25C Tch=125C ID=15A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V 9 RGS=10 V CC =50V ID=30A VGS=10V L=146H Tch=25C IF=30A VGS=0V Tch=25C IF=30A VGS=0V -di/dt=100A/s Tch=25C 10 34 18 1110 280 22 16 23 31 16 32 13 9 Max. 5.0 25 250 100 44 1665 420 33 24 35 47 24 48 20 14 41 1.10 0.1 0.38 1.65 Units V V A nA m S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) ** Test Conditions channel to case channel to ambient channel to ambient Min. Typ. Max. 0.833 87.0 52.0 Units C/W C/W C/W ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) http://store.iiic.cc/ 1 2SK3647-01 FUJI POWER MOSFET Characteristics 200 Allowable Power Dissipation PD=f(Tc) 5 Allowable Power Dissipation PD=f(Tc) Surface mounted on 2 175 1000mm ,t=1.6mm FR-4 PCB 2 (Drain pad area : 500mm ) 4 150 3 PD [W] PD [W] 125 100 75 2 50 1 25 0 0 25 50 75 100 125 0 150 0 25 50 Tc [C] 600 75 100 125 150 Tc [C] Typical Output Characteristics Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V ID=f(VDS):80s Pulse test,Tch=25C 120 20V IAS=17A 500 100 10V 80 400 ID [A] EAS [mJ] IAS=25A 300 60 IAS=41A 8V 40 200 7.5V 7.0V 20 100 0 0 0 25 50 75 100 125 0 150 2 4 6 8 6.5V 6.0V VGS=5.5V 10 12 VDS [V] starting Tch [C] Typical Transfer Characteristic Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 100 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 VGS[V] 1 10 100 ID [A] http://store.iiic.cc/ 2 2SK3647-01 FUJI POWER MOSFET Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 0.18 100 80 RDS(on) [ m ] RDS(on) [ ] VGS= 6.5V7.0V 7.5V 8V 0.15 6.0V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V 0.12 10V 0.09 60 max. 40 typ. 0.06 20V 20 0.03 0 0.00 0 20 40 60 80 100 -50 120 -25 0 25 50 ID [A] 7.0 75 100 125 150 Tch [C] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Typical Gate Charge Characteristics VGS=f(Qg):ID=30A, Tch=25C 14 6.5 6.0 12 5.5 max. 10 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 3.0 min. 8 Vcc= 50V 6 2.5 2.0 4 1.5 1.0 2 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 10 20 Tch [C] 10 1 10 0 30 40 50 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 C [nF] IF [A] Ciss Coss 10 -1 10 -2 1 Crss 10 -1 10 0 1 10 10 2 0.1 0.00 VDS [V] 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VSD [V] http://store.iiic.cc/ 3 2SK3647-01 FUJI POWER MOSFET Typical Switching Characteristics vs. ID 10 3 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB t=f(ID):Vcc=48V, VGS=10V, RG=10 100 90 tf Rth(ch-a) [C/W] 10 2 td(off) t [ns] 80 70 60 50 td(on) 10 40 1 tr 30 20 10 10 0 0 10 -1 10 0 10 1 10 0 2 2000 3000 4000 5000 2 Drain Pad Area [mm ] ID [A] Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V 3 10 Avalanche Current I AV [A] 1000 2 10 Single Pulse 1 10 0 10 -1 10 -8 10 -7 10 10 -6 -5 10 -4 10 10 -3 -2 10 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4