Dual IGBT
HVIGBT Module
150 Amperes/4500 Volts
QID4515001 Preliminary
111/14 Rev. 10
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Outline Drawing and Circuit Diagram
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Dimensions Inches Millimeters
A 5.51 140.0
B 2.87 73.0
C 1.89 48.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01 57.0±0.25
F 1.18 30.0
G 0.43 11.0
H 1.07 27.15
J 0.20 5.0
K 1.65 42.0
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-40 to 150°C Extended
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi H-Series
Chip Technology
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Copper Baseplate
Creepage and Clearance Meet
IEC 60077-1
Rugged SWSOA and RRSOA
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
Dimensions Inches Millimeters
L 0.69±0.01 17.5±0.25
M 0.38 9.75
N 0.20 5.0
P 0.22 5.5
Q 1.44 36.5
R 0.16 4.0
S M6 Metric M6
T 0.63 Min. 16.0 Min.
U 0.11 x 0.02 2.8 x 0.5
V 0.28 Dia. 7.0 Dia.
32
1
8
7
6
N
J (2TYP)
S NUTS
(3TYP)
H
H
V (4TYP)
M
G (3TYP) R (DEEP)
EB
K
(3TYP)
L
(2TYP)
P
U (5TYP)
T (SCREWING
DEPTH)
Q
5
4
1
2
3
4
5
6
7
8
F F
D
A
C
QID4515001
Dual IGBT HVIGBT Module
150 Amperes/4500 Volts
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/14 Rev. 10
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Preliminary
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied
Ratings Symbol QID4515001 Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (VGE = 0V) VCES 4500 Volts
Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts
Collector Current, DC (TC = 91°C) IC 150 Amperes
Peak Collector Current (Pulse) ICM 300*1 Amperes
Diode Forward Current*2 IF 150 Amperes
Diode Forward Surge Current (Pulse)*2 IFM 300*1 Amperes
I2t for Diode (t = 10ms) I2t 10 kA2sec
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C) PC 1440 Watts
Mounting Torque, M6 Terminal Screws — 44 in-lb
Mounting Torque, M6 Mounting Screws — 44 in-lb
Module Weight (Typical) — 900 Grams
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 9.0 kVolts
Partial Discharge Qpd 10 pC
(V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width, tpsc 10 µs
(VCC ≤ 3200V, VGE = ±15V, RG(off) ≥ 60Ω, Tj = 125°C)
Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 2.7 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C — 3.5 3.9*3 Volts
IC = 150A, VGE = 15V, Tj = 125°C — 4.0 — Volts
Total Gate Charge QG VCC = 2250V, IC = 150A, VGE = 15V — 1.4 — µC
Emitter-Collector Voltage*2 VEC IE = 150A, VGE = 0V — 4.7 5.6 Volts
*1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Pulse width and repetition rate should be such that device junction temperature rise is negligible.
QID4515001
Dual IGBT HVIGBT Module
150 Amperes/4500 Volts
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/14 Rev. 10
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Preliminary
Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies — 18 — nF
Output Capacitance Coes VGE = 0V, VCE = 10V — 1.33 — nF
Reverse Transfer Capacitance Cres — 0.4 — nF
Turn-on Delay Time td(on) VCC = 2250V, IC = 150A, — — 1.5 µs
Rise Time tr VGE = ±15V, — — 0.5 µs
Turn-off Delay Time td(off) RG = 60Ω, LS = 180nH — — 3.5 µs
Fall Time tf Inductive Load — — 1.2 µs
Turn-on Switching Energy Eon Tj = 125°C, IC = 150A, VGE = ±15V, — 600 — mJ/P
Turn-off Switching Energy Eoff RG = 60Ω, VCC = 2250V, — 450 — mJ/P
LS = 180nH , Inductive Load
Diode Reverse Recovery Time*2 trr VCC = 2250V, IE = 150A, — — 1.8 µs
Diode Reverse Recovery Charge*2 Qrr VGE = ±15V, RG(on) = 60Ω, — 81*1 — µC
Diode Reverse Recovery Energy Erec LS = 180nH , Inductive Load — 55 — mJ/P
Stray Inductance (C1-E2) LSCE — 60 — nH
Lead Resistance Terminal-Chip RCE — 0.8 — mΩ
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case*4 Rth(j-c) Q Per IGBT — — 0.087 °C/W
Thermal Resistance, Junction to Case*4 Rth(j-c) D Per FWDi — — 0.174 °C/W
Contact Thermal Resistance, Case to Fin Rth(c-f) Per Module, — 0.018 — °C/W
Thermal Grease Applied, λgrease = 1W/mK
Comparative Tracking Index CTI 600 — —
Clearance Distance in Air (Terminal to Base) da(t-b) 35.0 — — mm
Creepage Distance Along Surface ds(t-b) 64 — — mm
(Terminal to Base)
Clearance Distance in Air da(t-t) 19 — — mm
(Terminal to Terminal)
Creepage Distance Along Surface ds(t-t) 54 — — mm
(Terminal to Terminal)
*1 Pulse width and repetition rate should be such that device junction temperature rise is negligible.
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*4 TC measurement point is just under the chips.
QID4515001
Dual IGBT HVIGBT Module
150 Amperes/4500 Volts
4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/14 Rev. 10
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
EMITTER CURRENT, IE, (AMPERES)
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
Single Pulse
Tj = 25°C
Per Unit Base =
Rth(j-c) = 0.087 K/W
Single Pulse
Tj = 25°C
Per Unit Base =
Rth(j-c) = 0.174 K/W
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
0 10050 150 200 250
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
10-3 10-1
10-2 100
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
0
0.2
0.4
0.6
0.8
1.0
1.2
10-3 10-1
10-2 100
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
0 250100 200150
Tj = 25°C
Tj = 125°C
VGE = 15V
Tj = 25°C
Tj = 125°C
50
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Preliminary
QID4515001
Dual IGBT HVIGBT Module
150 Amperes/4500 Volts
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/14 Rev. 10
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
TURN-ON SWITCHING ENERGY, Eon, (mJ/PULSE)
HALF-BRIDGE TURN-ON SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
50 200
1250
1000
500
750
250
0100 150
0 1000 2000 40003000 5000
0
COLLECTOR CURRENT, IC, (AMPERES)
TURN-OFF SWITCHING ENERGY, Eoff, (mJ/PULSE)
HALF-BRIDGE TURN-OFF SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
750
0
500
625
375
250
125
0
50 200150100
VCC = 2250V
VGE = ±15V
RG = 60Ω
LS = 180nH
Tj = 125°C
Inductive Load Integrated
Over Range of 10%
VCC = 2250V
VGE = ±15V
RG = 60Ω
LS = 180nH
Tj = 125°C
Inductive Load Integrated
Over Range of 10%
VCC = 2250V
VGE = ±15V
RG = 60Ω
LS = 180nH
Tj = 125°C
Inductive Load Integrated
Over Range of 10%
IGBT Drive Conditions
VCC ≤ 3000V
VGE = ±15V
RG ≥ 60Ω
LS = 100nH
Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
350
250
300
50
100
150
200
0
TURN-OFF SWITCHING
SAFE OPERATING AREA (RBSOA)
(TYPICAL)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
0 50 100 150 200
REVERSE RECOVERY ENERGY, Erec, (mJ/PULSE)
75.0
62.5
12.5
25.0
37.5
50.0
0
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Preliminary
QID4515001
Dual IGBT HVIGBT Module
150 Amperes/4500 Volts
6
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/14 Rev. 10
DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(TYPICAL)
0 1000 2000 40003000 5000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
350
250
300
50
100
150
200
0
VCC ≤ 3000V
di/dt ≤ 500A/µs
Tj = 125°C
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Preliminary