77 RadHard MSI Logic
UT54ACS139/UT54ACTS139
Radiation-Hardened
FEATURES
radiation-hardened CMOS
- Latchup immune
• High speed
• Low power consumption
• Single 5 volt supply
• Available QML Q or V processes
• Flexible package
- 16-pin DIP
- 16-lead flatpack
DESCRIPTION
The UT54ACS139 and the UT54ACTS139 are designed to be
used in high-performance memory-decoding or data-routing ap-
plications requiring very short propagation delay times.
The devices consist of two individual two-line to four-line de-
coders in a single package. The active-low enable input can be
used as a data line in demultiplexing applications.
The devices are characterized over full military temperature
range of -55 C to +125 C.
FUNCTION TABLE
PINOUTS 16-Pin DIP
Top View
16-Lead Flatpack
Top View
LOGIC DIAGRAM
ENABLE
INPUTS SELECT
INPUTS OUTPUT
GB A Y0 Y1 Y2 Y3
HX X HHHH
L L L L HHH
L L H H LH H
LHLH H LH
LHHHHHL
1
2
3
4
5
7
6
16
15
14
13
12
10
11
IG
1A
1B
1Y0
1Y1
1Y2
1Y3
VDD
2G
2A
2B
2Y0
2Y1
2Y2
8 9
VSS 2Y3
1
2
3
4
5
7
6
16
15
14
13
12
10
11
VDD
1G
1A
1B
1Y0
1Y1
1Y2
1Y3
2G
2A
2B
2Y0
2Y1
2Y2
VSS 2Y3
8 9
1Y0
1Y1
1Y2
1Y3
DATA
(4)
(5)
(6)
(7)
(1)
(2)
(3)
1G
1B
SELECT
2Y0
2Y1
2Y2
2Y3
(12)
(11)
(10)
(9)
(15)
(14)
(13)
2G
2B
SELECT
1A
2A
RadHard MSI Logic 78
UT54ACS139/UT54ACTS139
LOGIC SYMBOL
RADIATION HARDNESS SPECIFICATIONS 1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
PARAMETER LIMIT UNITS
Total Dose 1.0E6 rads(Si)
SEU Threshold 280 MeV-cm2/mg
SEL Threshold 120 MeV-cm2/mg
Neutron Fluence 1.0E14 n/cm2
(9) 2Y3
(2)
1A (3)
1B (1)
1G
(14)
2A
(13)
2B
(15)
2G
2
1
(10) 2Y2
(11) 2Y1
(12) 2Y0
(7) 1Y3
(6) 1Y2
(5) 1Y1
(4) 1Y0
X/Y
EN 1
2
0
3
(2)
1A (3)
1B (1)
1G
(14)
2A
(13)
2B
(15)
2G
1
0DMUX
1
2
0
3
(9) 2Y3
(10) 2Y2
(11) 2Y1
(12) 2Y0
(7) 1Y3
(6) 1Y2
(5) 1Y1
(4) 1Y0
Note:
1. Logic symbols in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
G
0
3
---
SYMBOL PARAMETER LIMIT UNITS
VDD Supply voltage -0.3 to 7.0 V
VI/O Voltage any pin -.3 to VDD +.3 V
TSTG Storage Temperature range -65 to +150 C
TJMaximum junction temperature +175 C
TLS Lead temperature (soldering 5 seconds) +300 C
JC Thermal resistance junction to case 20 C/W
IIDC input current 10 mA
PDMaximum power dissipation 1W
79 RadHard MSI Logic
UT54ACS139/UT54ACTS139
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER LIMIT UNITS
VDD Supply voltage 4.5 to 5.5 V
VIN Input voltage any pin 0 to VDD V
TCTemperature range -55 to + 125 C
RadHard MSI Logic 80
UT54ACS139/UT54ACTS139
DC ELECTRICAL CHARACTERISTICS 7
(VDD = 5.0V 10%; VSS = 0V 6, -55 C < TC < +125 C)
SYMBOL PARAMETER CONDITION MIN MAX UNIT
VIL Low-level input voltage 1
ACTS
ACS 0.8
.3VDD
V
VIH High-level input voltage 1
ACTS
ACS .5VDD
.7VDD
V
IIN Input leakage current
ACTS/ACS VIN = VDD or VSS -1 1A
VOL Low-level output voltage 3
ACTS
ACS IOL = 8.0mA
IOL = 100 A0.40
0.25 V
VOH High-level output voltage 3
ACTS
ACS IOH = -8.0mA
IOH = -100 A.7VDD
VDD - 0.25 V
IOL Output current10
(Sink)
VIN = VDD or VSS
VOL = 0.4V
8mA
IOH Output current10
(Source)
VIN = VDD or VSS
VOH = VDD - 0.4V
-8 mA
IOS Short-circuit output current 2 ,4
ACTS/ACS VO = VDD and VSS -200 200 mA
Ptotal Power dissipation 2, 8, ,9 CL = 50pF 1.8 mW/
MHz
IDDQ Quiescent Supply Current VDD = 5.5V 10 A
IDDQ Quiescent Supply Current Delta
ACTS For input under test
VIN = VDD - 2.1V
For all other inputs
VIN = VDD or VSS
VDD = 5.5V
1.6 mA
CIN Input capacitance 5 = 1MHz @ 0V 15 pF
COUT Output capacitance 5 = 1MHz @ 0V 15 pF
81 RadHard MSI Logic
UT54ACS139/UT54ACTS139
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but
are guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
RadHard MSI Logic 82
UT54ACS139/UT54ACTS139
AC ELECTRICAL CHARACTERISTICS 2
(VDD = 5.0V 10%; VSS = 0V 1, -55 C < TC < +125 C)
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose 1E6 rads(Si).
SYMBOL PARAMETER MINIMUM MAXIMUM UNIT
tPHL Select to output Yn 2 14 ns
tPLH Select to output Yn 2 15 ns
tPHL Enable to output Yn 2 14 ns
tPLH Enable to output Yn 2 12 ns
