LQA30A300C
Qspeed™ Family
300 V, 30 A Q-Series Common-Cathode Diode
www.powerint.com January 2011
Product Summary
IF(AVG) per diode 15 A
VRRM 300 V
QRR (Typ at 125 °C) 47 nC
IRRM (Typ at 125 °C) 2.7 A
Softness tb/ta (Typ at 125 °C) 0.7
TO-247 AD
RoHS Compliant
Package uses Lead-free plating and Green mold
compound Halogen free per IEC 61249-2-21.
General Description
This device has the lowest QRR of any 300V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
• AC/DC and DC/DC output rectification
• Output & freewheeling diodes
• Motor drive circuit s
• DC-AC inverters
Features
• Low QRR, Low IRRM, Low tRR
• High dIF/dt capable (1000A/µs)
• Soft recovery
Benefits
• Increases efficiency
• Eliminates need for snubber circuit s
• Reduces EMI filter component size & count
• Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Symbol Parameter Conditions Rating Units
VRRM Peak repetitive reverse voltage 300 V
IF(AVG) Average forward current Per Diode, TJ = 150 °C, TC = 108 °C 15 A
Per Device, TJ = 150 °C, TC = 108 °C 30 A
IFSM Non-repetitive peak surge cur r ent Per Diode, 60 Hz, ½ cycle 100 A
IFSM Non-repetitive peak surge current Per Diode, ½ cycle of t = 28 µs Sinusoid,
TC = 25 °C 350 A
TJ Maximum junction temperatur e 150 °C
TSTG Storage temperature –55 to 150 °C
Lead soldering temperature Leads at 1.6mm from case, 10 sec 300 °C
PD Power dissipation TC = 25 °C 65.8 W
Thermal Resistance
Symbol Resistance from: Conditions Rating Units
RθJA Junction to ambient Per Device 40 (Typ) °C/W
Per Diode 1.9 °C/W
RθJC Junction to case Per Device 0.95 °C/W
Pin Assignment
A1
K
A2 K
(Backside
Heatsink)
A1
K
A2 K
(Backside
Heatsink)
A1 K
A2
A1 K
A2
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LQA30A300C
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Electrical Specifications at TJ= 25 °C (unless otherwise specified)
Symbol Parameter Conditions Min Typ Max Units
DC Characteristics
IR Reverse current per diode VR = 300 V, TJ = 25 °C - - 25 µA
V
R = 300 V, TJ = 125 °C - 0.45 - mA
VF Forward voltage per diod e IF = 15 A, TJ = 25 °C - 1.6 1.9 V
I
F = 15 A, TJ = 150 °C - 1.4 - V
CJ Junction capacitance per
diode VR = 10 V, 1 MHz - 50 - pF
Dynamic Characteristics
tRR T
J=25 °C - 13 - ns
Reverse recovery time,
per diode dIF/dt =200 A/µs
VR=200, IF=15 A TJ=125 °C - 26 - ns
QRR T
J=25 °C - 12.5 16 nC
Reverse recovery charge,
per diode dIF/dt =200 A/µs
VR=200, IF=15 A TJ =125 °C - 47 - nC
IRRM T
J =25 °C - 1.5 1.9 A
Maximum reverse
recovery current, per
diode
dIF/dt =200 A/µs
VR=200, IF=15 A TJ=125 °C - 2.7 - A
S TJ =25 °C - 0.7 -
Softness per diode= a
b
t
t dIF/dt =200 A/µs
VR=200, IF=15 A TJ=125 °C - 0.7 -
Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction.
Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups.
(For further details, see application note AN- 300.)
Figure 1. Reverse Recovery Definitions
Figure 2. Reverse Recovery Test Circuit
Pulse generator
Rg Q1
VR
+
15V
D1
DUT
L1
IF
dIF/dt
IRRM
tRR
tb
ta
0
0.1xIRRM
Rev 1.1 01/11 www.powerint.com
LQA30A300C
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Electrical Specifications at TJ= 25 °C (unless otherwise specified)
0
5
10
15
20
25
30
35
40
45
50
0.0 0.5 1.0 1.5 2.0 2.5
V
F
(V)
I
F
(A)
Tj=125C
Tj=25C
Figure 3. Typical IF vs VF
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
F
(V)
I
F
(A)
Tj=125C
Tj=25C
Figure 4. Typical IF vs VF
0
20
40
60
80
100
120
140
160
180
200
0 20 40 60 80 100 120 140 160 180
V
R
(V)
C
j
(pF)
Figure 5. Typical Cj vs VR
0
5
10
15
20
25
30
35
40
25 50 75 100 125 150
Case Temper atu re, T
C
(
o
C)
I
F(AV)
(A)
Figure 6. DC Current Derating Curve
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25
I
F
(A)
Q
RR
(n C )
dI/dt=200A/us
dI/dt=500A/us
Figure 7. Typical QRR vs IF at Tj=125 °C
10
15
20
25
30
0 5 10 15 20 25
I
F
(A)
t
RR
(n s)
dI/dt=200A/us
dI/dt=500A/us
Figure 8. Typical tRR vs IF at Tj=125 °C
www.powerint.com Rev 1.1 01/11
LQA30A300C
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0
10
20
30
40
50
60
70
80
25 50 75 100 125 150
Case Temperatur e, T
C
(
o
C)
P ( W )
Figure 9. Power Derating Curve
0
5
10
15
20
25
30
35
40
45
50
55
60
25 50 75 100 125 150
T
C
(°C)
I
F
(PEAK) (A)
duty cycle =1 0%
duty cycle =5 0%
duty cycle =3 0%
DC
Figure 10. IF(Peak) vs TC, f=70 kHz
LQA30A300C
0.001
0.01
0.1
1
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
t1(sec)
Zth(j-c)/Rth(j-c
)
D= 0.002
D= 0. 005
D= 0.01
D= 0.02
D= 0.05
D= 0.1
D = 0.3
D= 0.5
Single P ulse
Figure 11. Normalized Maximum Transient Thermal Impedance
Rev 1.1 01/11 www.powerint.com
LQA30A300C
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Dimensional Outline Drawings
TO-247 AD
Mechanical Mounting
Method Maximum Torque / Pressure specification
Screw through hole in package tab 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in)
Clamp against package body 12.3 kilogram-force per square centimeter (kgf/cm2) or 175 lbf/in2
Soldering time and temperature: This product has been designed for use with high-tempe rature, lead-
free solder. The compone nt leads can be subjected to a maximum temperatu re of 300 °C, for up to 10
seconds. See Application Note AN-303, for more details.
Ordering Information
Part Number Package Packing
LQA30A300C TO-247 30 units/tube
The information contained in this document is subject to change without notice.
Millimeters
Dim MIN MAX
A 4.90 5.10
A1 2.31 2.51
A2 1.90 2.10
b 1.16 1.26
b2 1.96 2.06
b4 2.96 3.06
c 0.59 0.66
D 20.90 21.10
D1 16.25 16.85
D2 1.05 1.35
E 15.70 15.90
E1 13.10 13.50
E2 4.90 5.10
E3 2.40 2.60
e 5.44BSC
L 19.80 21.10
L1 - 4.30
ØP 3.50 3.70
ØP1 - 7.40
ØP2 2.40 2.60
Q 5.60 6.00
S 6.15BSC
T 9.80 10.20
U 6.00 6.40
www.powerint.com Rev 1.1 01/11
LQA30A300C
6
Revision Notes Date
1.0 Released by Qspeed 08/09
1.1 Converted to Power Integrations Document 01/11
Rev 1.1 01/11 www.powerint.com
LQA30A300C
7
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INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING,
WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
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PATENT INFORMATION
The products and applications illustrated herein (including transformer construction and circuits external to the products)
may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applicatio ns
assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at www.powerint.com. Power
Integrations grants its customers a license under certain patent rights as set forth at http://www.powerint.com/ip.htm.
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