SSM3J140TU
1
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM3J140TU
SSM3J140TU
SSM3J140TU
SSM3J140TU
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Power Management Switches
2.
2.
2.
2. Features
Features
Features
Features
(1) AEC-Q101 qualified (Note 1)
(2) 1.5-V gate drive voltage.
(3) Low drain-source on-resistance
RDS(ON) = 63.2 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 41.1 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 31.0 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 25.8 mΩ (max) (@VGS = -4.5 V)
Note 1: For detail information, please contact to our sales.
3.
3.
3.
3. Packaging and Pin Configuration
Packaging and Pin Configuration
Packaging and Pin Configuration
Packaging and Pin Configuration
UFM
1. Gate
2. Source
3. Drain
2017-08-04
Rev.2.0
©2017
Toshiba Electronic Devices & Storage Corporation
SSM3J140TU
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Channel temperature
Storage temperature
(t < 1 s)
(Note 1)
(Note 1,2)
(Note 3)
(Note 3)
Symbol
VDSS
VGSS
ID
IDP
PD
PD
Tch
Tstg
Rating
-20
-8/+6
-4.4
-8.8
500
1000
150
-55 to 150
Unit
V
A
mW
mW
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1 %
Note 3: Device mounted on an FR4 board.(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2017-08-04
Rev.2.0
©2017
Toshiba Electronic Devices & Storage Corporation
SSM3J140TU
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
(Note 1)
(Note 2)
(Note 3)
(Note 3)
Symbol
IGSS
IDSS
V(BR)DSS
V(BR)DSX
Vth
RDS(ON)
|Yfs|
Test Condition
VGS = -8/+6 V, VDS = 0 V
VDS = -20 V, VGS = 0 V
ID = -1 mA, VGS = 0 V
ID = -1 mA, VGS = 5 V
VDS = -3 V, ID = -1 mA
ID = -4.0 A, VGS = -4.5 V
ID = -4.0 A, VGS = -2.5 V
ID = -2.5 A, VGS = -1.8 V
ID = -1.5 A, VGS = -1.5 V
VDS = -3 V, ID = -2.0 A
Min
-20
-15
-0.3
8.8
Typ.
20.9
24.2
28.8
32.4
17.5
Max
±1
-1
-1.0
25.8
31.0
41.1
63.2
Unit
µA
V
mΩ
S
Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-1 mA for
this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be
lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).
Take this into consideration when using the device.
Note 3: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
ton
toff
Test Condition
VDS = -10 V, VGS = 0 V,
f = 1 MHz
VDD = -10 V, ID = -1.5 A
VGS = 0 to -2.5 V, RG = 4.7 Ω
Duty ≤ 1 %, Input: tr, tf < 5 ns
Common source, See Chapter 5.3
Min
Typ.
1800
190
205
25
133
Max
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
2017-08-04
Rev.2.0
©2017
Toshiba Electronic Devices & Storage Corporation
SSM3J140TU
4
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Qgs1
Qgd
Test Condition
VDD = -10 V, VGS = -4.5 V,
ID = -4.4 A
Min
Typ.
24.8
1.0
6.8
Max
Unit
nC
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Diode forward voltage (Note 1)
Symbol
VDSF
Test Condition
ID = 4.4 A, VGS = 0 V
Min
Typ.
0.83
Max
1.2
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
2017-08-04
Rev.2.0
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Toshiba Electronic Devices & Storage Corporation
SSM3J140TU
5
7.
7.
7.
7. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 I
I
I
ID
D
D
D - V
- V
- V
- VDS
DS
DS
DS Fig.
Fig.
Fig.
Fig. 7.2
7.2
7.2
7.2 I
I
I
ID
D
D
D - V
- V
- V
- VGS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 7.3
7.3
7.3
7.3 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - V
- V
- V
- VGS
GS
GS
GS Fig.
Fig.
Fig.
Fig. 7.4
7.4
7.4
7.4 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - I
- I
- I
- ID
D
D
D
Fig.
Fig.
Fig.
Fig. 7.5
7.5
7.5
7.5 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 7.6
7.6
7.6
7.6 V
V
V
Vth
th
th
th - T
- T
- T
- Ta
a
a
a
2017-08-04
Rev.2.0
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Toshiba Electronic Devices & Storage Corporation
SSM3J140TU
6
Fig.
Fig.
Fig.
Fig. 7.7
7.7
7.7
7.7 |Y
|Y
|Y
|Yfs
fs
fs
fs| - I
| - I
| - I
| - ID
D
D
DFig.
Fig.
Fig.
Fig. 7.8
7.8
7.8
7.8 I
I
I
IDR
DR
DR
DR - V
- V
- V
- VDS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 7.9
7.9
7.9
7.9 C - V
C - V
C - V
C - VDS
DS
DS
DS Fig.
Fig.
Fig.
Fig. 7.10
7.10
7.10
7.10 t - I
t - I
t - I
t - ID
D
D
D
Fig.
Fig.
Fig.
Fig. 7.11
7.11
7.11
7.11 Dynamic Input Characteristics
Dynamic Input Characteristics
Dynamic Input Characteristics
Dynamic Input Characteristics Fig.
Fig.
Fig.
Fig. 7.12
7.12
7.12
7.12 r
r
r
rth
th
th
th - t
- t
- t
- tw
w
w
w
2017-08-04
Rev.2.0
©2017
Toshiba Electronic Devices & Storage Corporation
SSM3J140TU
7
Fig.
Fig.
Fig.
Fig. 7.13
7.13
7.13
7.13 P
P
P
PD
D
D
D - T
- T
- T
- Ta
a
a
a
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2017-08-04
Rev.2.0
©2017
Toshiba Electronic Devices & Storage Corporation
SSM3J140TU
8
Package Dimensions
Package Dimensions
Package Dimensions
Package Dimensions
Unit: mm
Weight: 6.6 mg (typ.)
Package Name(s)
TOSHIBA: 2-2U1S
Nickname: UFM
2017-08-04
Rev.2.0
©2017
Toshiba Electronic Devices & Storage Corporation
SSM3J140TU
9
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
2017-08-04
Rev.2.0
©2017
Toshiba Electronic Devices & Storage Corporation
